ELM16603EA-S

10 8.0V 5.0V 4 Vds=5V 3 4.0V 8 Id (A) 3.0V 4 2.5V Id (A) 6 2 125°C 1 25°C 0 2 Vgs=2.0V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 500 Vgs=1.8V 0 0.5 1 1.5 2 2.5 3 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 450 400 Vgs=2.5V Id=1.7A 1.6 1.4 1.2 1 0.8 Vgs=1.8V Id=1.7A Vgs=4.5V Id=1.7A Rds(on) (m: ) 350 300 250 Vgs=4.5V 200 150 100 0 1 2 3 4 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=2.5V 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 600 500 Id=1.7A 1E+01 1E+00 125°C 1E-01 125°C Rds(on) (m: ) 400 Is (A) 25°C 1E-02 1E-03 300 200 100 0 2 3 4 5 25°C 1E-04 1E-05 6 7 8 0.0 0.5 1.0 1.5 2.0 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vgs (Volts) Vds=10V Id=1.7A Capacitance (pF) 200 150 Ciss 3 2 100 50 Coss 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 Crss 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150°C Ta=25°C 10.0 Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 100Ps 20 Tj(max.)=150°C Ta=25°C 15 Power (W) 10Ps Id (Amps) 1ms 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 20 -10V 15 -5V -4.5V -4V 10 Vds=-5V 8 25°C -Id (A) 10 -3V 5 -2.5V -Id (A) Vgs=-3.5V 6 125°C 4 2 -2V 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 250 225 200 Vgs=-2.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Vgs=-4.5V, Vgs=-10V 1.4 Vgs=-2.5V 1.2 Id=-2.5A 1 Rds(on) (m: ) 175 150 125 100 75 50 0 1 2 3 4 5 6 Vgs=-10V Vgs=-4.5V 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 Id=-2.5A 1.0E+01 1.0E+00 1.0E-01 125°C Rds(on) (m: ) -Is (A) 200 150 100 50 0 0 2 4 6 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 1.0E-06 25°C 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-15V Id=-2.5A 4 Capacitance (pF) -Vgs (Volts) 600 500 400 300 200 100 0 0 1 2 3 4 5 6 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics -Vds (Volts) Figure 8: Capacitance Characteristics Coss Crss 3 Ciss 2 1 0 100.0 Tj(max.)=150°C Ta=25°C -Id (Amps) 10.0 Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 20 10P s Power (W) 100P s 1ms Tj(max.)=150°C Ta=25°C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z Tja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance