16 8V 12 4.5V
10 Vds=5V 8 2V
Id (A)
8
Id (A)
3V 2.5V
6
4 4 Vgs=1.5V 2 25°C 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 100 1.8 0 0 0.5 1 1.5 2 2.5 Vgs (Volts) Figure 2: Transfer Characteristics 125°C
Normalized On-Resistance
Vgs=2.5V 1.6 1.4 1.2 1 0.8 Vgs=1.8V Id=3.4A Vgs=4.5V
80
Vgs=1.8V
Rds(on) (m: )
60
Vgs=2.5V
40
Vgs=4.5V
20 0 4 8 12 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
100 90 80 Id=3.4A
1E+01 1E+00 125°C 1E-01 125°C
Rds(on) (m: )
70
Is (A)
60 50 40 30 20 0 2 4 25°C
1E-02 25°C 1E-03 1E-04 1E-05
6
8
0.0
0.2
0.4
0.6
0.8
1.0
Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 Vgs (Volts) Vds=10V Id=3.4A Capacitance (pF)
800
600
Ciss
3 2
400
200
Coss
1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5
Crss
10
15
20
Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Tj(max.)=150°C Ta=25°C 10.0 Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 100Ps
20 Tj(max.)=150°C Ta=25°C 15 Power (W) 10Ps
Id (Amps)
1ms
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
15 -4.5V -3.0V -8V 10 -2.5V
6 Vds=-5V
4 -2.0V
-Id (A)
-Id (A)
2
5 Vgs=-1.5V
125°C
25°C 0 0 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics 2
200
1.8
Normalized On-Resistance
Vgs=-1.8V
1.6
Id=-2.5A
Vgs=-2.5V
Rds(on) (m: )
150 Vgs=-2.5V 100 Vgs=-4.5V
1.4
Vgs=-1.8V Vgs=-4.5V
1.2
1
50 0 2 4 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 Id=-2.5A
Rds(on) (m: )
150
1E-01
125°C 25°C
-Is (A)
8
1E-02 1E-03 1E-04 1E-05
125°C 100 25°C
50 0 2 4 6 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 -Vgs (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics Vds=-10V Id=-2.5A Capacitance (pF)
800
600
Ciss
400
200
Crss Coss
0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Tj(max.)=150°C Ta=25°C -Id (Amps) 10.0 Rds(on) limited 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 0.1s 10ms 100Ps 10Ps Power (W)
20 Tj(max.)=150°C Ta=25°C 15
10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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