ELM16604EA-S

16 8V 12 4.5V 10 Vds=5V 8 2V Id (A) 8 Id (A) 3V 2.5V 6 4 4 Vgs=1.5V 2 25°C 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 100 1.8 0 0 0.5 1 1.5 2 2.5 Vgs (Volts) Figure 2: Transfer Characteristics 125°C Normalized On-Resistance Vgs=2.5V 1.6 1.4 1.2 1 0.8 Vgs=1.8V Id=3.4A Vgs=4.5V 80 Vgs=1.8V Rds(on) (m: ) 60 Vgs=2.5V 40 Vgs=4.5V 20 0 4 8 12 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 90 80 Id=3.4A 1E+01 1E+00 125°C 1E-01 125°C Rds(on) (m: ) 70 Is (A) 60 50 40 30 20 0 2 4 25°C 1E-02 25°C 1E-03 1E-04 1E-05 6 8 0.0 0.2 0.4 0.6 0.8 1.0 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vgs (Volts) Vds=10V Id=3.4A Capacitance (pF) 800 600 Ciss 3 2 400 200 Coss 1 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 Crss 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150°C Ta=25°C 10.0 Rds(on) limited 0.1s 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms 100Ps 20 Tj(max.)=150°C Ta=25°C 15 Power (W) 10Ps Id (Amps) 1ms 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 15 -4.5V -3.0V -8V 10 -2.5V 6 Vds=-5V 4 -2.0V -Id (A) -Id (A) 2 5 Vgs=-1.5V 125°C 25°C 0 0 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1 1.5 -Vgs (Volts) Figure 2: Transfer Characteristics 2 200 1.8 Normalized On-Resistance Vgs=-1.8V 1.6 Id=-2.5A Vgs=-2.5V Rds(on) (m: ) 150 Vgs=-2.5V 100 Vgs=-4.5V 1.4 Vgs=-1.8V Vgs=-4.5V 1.2 1 50 0 2 4 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 Id=-2.5A Rds(on) (m: ) 150 1E-01 125°C 25°C -Is (A) 8 1E-02 1E-03 1E-04 1E-05 125°C 100 25°C 50 0 2 4 6 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 -Vgs (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics Vds=-10V Id=-2.5A Capacitance (pF) 800 600 Ciss 400 200 Crss Coss 0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max.)=150°C Ta=25°C -Id (Amps) 10.0 Rds(on) limited 1.0 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1ms 0.1s 10ms 100Ps 10Ps Power (W) 20 Tj(max.)=150°C Ta=25°C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance