ELM16700EA-S

16 Vgs =2.0V 12 10 Vgs=5V 8 25°C 125°C Id (A) 8 Vgs =1.5V 4 Id (A) 5 6 4 2 Vgs =1.0V 0 0 1 2 3 4 Vds (Volts) Figure 1: On-Regions Characteristi 0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs (Volts) Figure 2: Transfer Characteristics cs 90 1.6 Vgs =1.8V Id=4.1A Normalize ON-Resistance 80 Rds(on) (m :) 1.4 70 60 50 40 30 0 2 4 6 8 10 Vgs =4.5V Vgs =2.5V Vgs=1.8V Vgs=2.5V 1.2 Vgs=4.5V 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 90 80 Id=4.1A 1E+01 1E+00 125°C 1E-01 Rds(on) (m :) 70 Is (A) 60 125°C 50 40 30 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C 5 Vds=4.5V 4 800 Id=4.1A Capacitance (pF) 700 600 500 400 300 200 100 Crss Coss Ciss Vgs (Volts) 3 2 1 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 100 Rds(on) limited 12 10 0.1s 1 Tj(max) =150°C Ta =25°C 0.1 0.1 1 1s 10s 1ms 10ms 100Ps Power (W) 100 10 10Ps 8 6 4 2 Id (A) DC 0 10 0.001 0.01 0.1 1 10 100 1000 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.Z Tja.R Tja RTja=90°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd Ton T 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence