16 8V 12 Vgs =2.0V
10 Vgs=5V 8 25°C 6 4 2 Vgs =1.0V 125°C
Id (A)
8 Vgs =1.5V 4
0 0 1 2 3 4 5 Vds (Volts) Figure 1: On-Regions Characteristi cs
Id (A)
0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs (Volts) Figure 2: Transfer Characteristics
90
1.6 Vgs =1.8V Id=3.8A
Normalize ON-Resistance
80
Rds(on) (m : )
70 60 50 40 30 0 2 4 6 8 10 Vgs =4.5V Vgs =2.5V
1.4
Vgs=1.8V Vgs=2.5V
1.2
Vgs=4.5V
1.0
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
90 80
1E+01 1E+00 125°C 1E-01
Rds(on) (m : )
70
Is (A)
60 125°C 50 40 30 0 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C
1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 25°C
6 Vds=4.5V 5
800
Id=3.8A
Capacitance (pF )
700 600 500 400 300 200 100 0 Coss 0 5 10 15 20 Crss Ciss
Vgs (Volt s)
4 3 2 1 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics
Vds (Volts) Figure 8: Capacitance Characteristics
100 Rds(on) limited 10 10Ps 100Ps 0.1s 1 Tj(max) =150°C Ta =25°C 0.1 0.1 1 10 100 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1s 10s 1ms 10ms DC
12 10
Power (W)
8 6 4 2 0 0.001
Id (A)
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=110°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton
T
0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence
1.0E+01 125°C 1.0E+00
100 f = 1MHz 80
Capacitance (pF)
25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
If (Amps)
60
1.0E-01
40
1.0E-02
20
1.0E-03 0 0 5 10 15 20 Vka (Volts) Figure 13: Schottky Capacitance Characteristics Vf (Volts) Figure 12: Schottky Forward Characteristics
0.5
1.0E-02
0.4
Leakage Current (A)
1.0E-03
Vf (Volts)
If=0.5A 0.3
1.0E-04
Vr=16V
0.2
1.0E-05
0.1 0 25 50 75 100 Temperature (°C) 125 150
1.0E-06 0 25 50 75 100 125 150 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature
Figure 14: Schottky Forward Drop vs. Junction Temperature 10
ZTja Normalized Transient Thermal Resistance
1
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=135°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
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