ELM17400FA-S

10 10V 3V 8 4.5V 10 8 Vds=5V Id (A) 4 Id(A) 4 125°C 2 25°C 0 4 5 0 6 2.5V 6 2 Vgs=2V 0 0 1 2 3 Vds (Volts) Fig 1: On-Region Characteristics 200 175 0.5 1 1.5 2 2.5 3 3.5 Vgs(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance Id=1A 1.4 Vgs=4.5V Vgs=10V 1.2 Vgs=2.5V 1 Rds(on) (m: ) 150 125 100 75 Vgs=2.5V Vgs=4.5V Vgs=10V 50 0 2 4 6 8 10 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 200 1.0E+01 1.0E+00 Id=1A Rds(on) (m: ) 150 1.0E-01 Is (A) 125°C 1.0E-02 1.0E-03 125°C 100 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 0.0 0.2 0.4 25°C 50 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=15V Id=1.7A 4 600 500 Capacitance (pF) Ciss 400 300 200 100 0 Coss Crss Vgs (Volts) 3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 Vds (Volts) Figure 8: Capacitance Characteristics 100 Tj(max)=150°C Ta=25°C 10 Rds(on) limited 1 0.1s 1s 10s DC 0.01 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100Ps 1ms 10ms 10Ps 14 12 10 Tj(max)=150°C Ta=25°C Id (Amps) Power (W) 8 6 4 2 0 0.001 0.1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance