10 -5V -4V 8 -10V -3V Vgs=-3.5V
10 Vds=-5V 8 25°C
-Id (A)
4
-2.5V
-Id (A)
6
6
125°C
4
2
-2.0V
2
0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 300
0 0 0.5 1 1.5 2 2.5 3 3.5 4 -Vgs (Volts) Figure 2: Transfer Characteristics 1.8
Normalized On-Resistance
250
1.6 1.4
Vgs=-10V Vgs=-4.5V
Rds(on) (m: )
Vgs=-2.5V 200 Vgs=-4.5V 150
Vgs=-2.5V 1.2 1 0.8
Id=-1A
100 0 1 2 3
Vgs=-10V 4 5 6
0
25
50
75
100
125
150
175
-Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
350 Id=-1A 300
1.0E+01 1.0E+00 1.0E-01
Rds(on) (m: )
250
-Is (A)
125°C 200 150 25°C 100 50 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
125°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=-15V Id=-1A 4
600 500 Ciss
Capacitance (pF)
-Vgs (Volts)
400 300 200 Coss 100 0 Crss
3
2 1 0 0 1 2 3 4 5 -Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
30
-Vds (Volts) Figure 8: Capacitance Characteristics
100.00 Tj(max)=150°C Ta=25°C 10.00
14 12 100Ps 1ms 0.1s 10ms 10Ps 10 Tj(max)=150°C Ta=25°C
-Id (Amps)
Power (W)
Rds(on) limited 1.00
8 6 4
0.10
1s 10s DC
2 0 0.001
0.01 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton T Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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