ELM17408GA-S

16 8V 4.5V 10 Vds=5V 8 25°C 125°C 2V 12 3V 2.5V Id (A) 8 Id(A) Vgs=1.5V 2 3 4 5 6 4 4 2 0 0 1 Vds (Volts) Fig 1: On-Region Characteristics 140 0 0 0.5 1 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 1.8 Vgs=2.5V Normalized On-Resistance 120 1.6 1.4 1.2 1 0.8 Id=2.0A Vgs=1.8V Id=1.0A Vgs=4.5V Id=2.2A Rds(on) (m: ) Vgs=1.8V 100 Vgs=2.5V 80 Vgs=4.5V 60 0 2 4 6 8 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 180 160 Id=2.2A 1E+01 1E+00 125°C 1E-01 Rds(on) (m: ) 140 Is (A) 120 100 80 60 1 2 3 4 5 1E-02 25°C 1E-03 125°C 25°C 1E-04 1E-05 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=10V Id=2.2A 1000 4 800 Capacitance (pF) Ciss 600 Vgs (Volts) 3 2 400 Coss 200 Crss 1 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C Ta=25°C 10.0 100Ps 16 Tj(max)=150°C Ta=25°C 12 10Ps Id (Amps) Power (W) Rds(on) limited 0.1s 10ms 1ms 8 1.0 4 1s 0.1 0.1 10s DC 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance