ELM17412GA-S

15 10V 12 4V 6V 9 3V 3.5V 10 8 6 Id (A) Id(A) 6 Vgs=2.5V 3 2 4 125°C 25°C 0 0 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 1 3.5 160 1.8 Vgs=2.5V 120 100 80 Vgs=10V 60 0 1 2 3 4 5 6 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=4.5V 140 Vgs=4.5V 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 Id=2.1A 1.0E-01 Vgs=2.5V Id=1A Vgs=10V Id=2.1A Id=1.3A 180 160 140 120 100 25°C 80 1.0E-04 60 1 2 3 4 5 6 7 8 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125°C Rds(on) (m: ) Is (A) Normalized On-Resistance Rds(on) (m: ) 1.0E-02 1.0E-03 125°C 25°C 5 =10V Vds=15V ID=2.2A Id=2.1A 400 350 300 4 Capacitance (pF) Ciss 250 200 150 100 50 Vgs (Volts) 3 2 1 0 0 0.5 1.5 2 2.5 3 Qg (nC) Figure 7: Gate-Charge Characteristics 1 3.5 0 0 10 Vds (Volts) Figure 8: Capacitance Characteristics 5 15 100.0 Tj(max)=150°C Ta=25°C 20 16 Tj(max)=150°C Ta=25°C Power (W) Id (Amps) 10.0 Rds(on) limited 1.0 10s 1ms 10ms 100m 12 8 4 1s 0.1 0.1 DC 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=250°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Pd P 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Ton T T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance