25 -9V -8V -7V -6V
-10V -5V -4V -3.5V -3V
10 Vds=-5V
20
8
-Id (A)
-Id (A)
15
6
10
-2.5V -2V Vgs=-1.5V
4 125°C 2 25°C 0 5
5
0 0 1 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 180
0
0.5
1
1.5
2
2.5
3
3.5
-Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=-2.5V
Normalized On-Resistance
160
Vgs=-2.5V
Id=-1A 1.4 Vgs=-4.5V Id=-1.3A 1.2 Vgs=-10V Id=-2A 1
Rds(on) (m: )
140 Vgs=-4.5V 120 100 Vgs=-10V 80 60 0 1 2 3 4 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
340 300 260 Id=-2A
1.0E+01 1.0E+00 1.0E-01 125°C 25°C
Rds(on) (m: )
-Is (A)
125°C 25°C
220 180 140 100 60 0 2 4 6 8 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.4
0.8
1.2
-Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4
Vds=-10V Id=-2A
800
3 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -Qg (nC) Figure 7: Gate-Charge Characteristics
Capacitance (pF)
600
Ciss
-Vgs (Volts)
400 Coss 200 Crss
0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics
100.00
Tj(max)=150°C Ta=25°C Rds(on) limited
14 12 10Ps 0.1s 10ms 10 Tj(max)=150°C Ta=25°C
10.00
-Id (Amps)
Power (W)
8 6 4
1.00
0.10
1s 10s DC
2 0 0.001
0.01 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=220°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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