ELM17600GA-S

10 10V 8 4V 8V 5V 4 Vds=5V 3 25°C 125°C 2 Id (A) 3V 4 2.5V Vgs=2V Id (A) 5 6 3.5V 2 1 0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 480 0 0 0.5 1 1.5 2 2.5 3 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Vgs=1.8V Normalized On-Resistance 440 400 Vgs=1.8V 1.6 1.4 Id=0.7A Vgs=2.5V Id=0.75A Vgs=4.5V Rds(on) (m: ) 360 320 Vgs=2.5V 280 240 200 160 0 1 2 3 4 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=4.5V 1.2 1 0.8 0 25 50 75 100 Id=0.9A 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 500 460 1E+01 1E+00 420 Id=0.9A 1E-01 125°C Rds(on) (m: ) 380 340 300 260 220 180 140 1 2 3 4 5 6 7 8 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C Is (A) 1E-02 25°C 1E-03 1E-04 1E-05 0.0 0.4 0.8 1.2 1.6 2.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=10V Id=0.9A Capacitance (pF) 200 4 Vgs (Volts) 150 Ciss 3 100 Coss 50 2 Crss 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 Vds (Volts) Figure 8: Capacitance Characteristics 0 10.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 100Ps 1ms Power (W) 10Ps 16 Tj(max.)=150°C Ta=25°C 12 10ms 0.1s Id (Amps) 1.0 8 0.1 1s 10s DC 4 0.0 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=415°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 6 -10V -6V -4.5V -4V 4 -3.5V -3V 2 -2.5V Vgs=-2.0V 4 25°C Vds=-5V 3 125°C -Id (A) -Id (A) 2 1 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 900 Vgs=-1.8V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=-1.8V Normalized On-Resistance 800 Id=-0.4A 1.4 Vgs=-2.5V Id=-0.5A 1.2 Vgs=-4.5V Id=-0.6A 1 Rds(on) (m: ) 700 Vgs=-2.5V 600 500 400 300 0 1 2 3 4 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs=-4.5V 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 900 Id=-0.6A 800 1.0E+00 1.0E-01 125°C 1.0E-02 Rds(on) (m: ) 700 -Is (A) 600 500 400 300 0 2 4 125°C 25°C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 25°C 6 8 10 0.0 0.4 0.8 1.2 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-10V Id=-0.6A 4 Capacitance (pF) -Vgs (Volts) 200 150 Ciss 3 100 Coss 50 Crss 2 1 0 0.0 0.5 1.0 1.5 2.0 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 10.00 Tj(max.)=150°C, Ta=25°C 10Ps Rds(on) limited 1ms 10ms 0.1s 1s 10s DC 100Ps Power (W) 14 12 10 8 6 4 2 Tj(max.)=150°C Ta=25°C 1.00 -Id (Amps) 0.10 0.01 0.00 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=415°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 T Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance