10 10V 8 4V 8V 5V
4 Vds=5V 3 25°C 125°C 2
Id (A)
3V 4 2.5V Vgs=2V
Id (A)
5
6
3.5V
2
1
0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 480 440 400
0 0 0.5 1 1.5 2 2.5 3 Vgs (Volts) Figure 2: Transfer Characteristics 1.8 Vgs=1.8V
Normalized On-Resistance
Vgs=1.8V
1.6
Id=0.7A Vgs=2.5V Id=0.75A
Rds(on) (m: )
360 320 280 240 200 160 0 1 2 3 4 Vgs=4.5V Vgs=2.5V
1.4 Vgs=4.5V Id=0.9A
1.2
1
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
500 460
1E+01 1E+00
420
Id=0.9A 1E-01
125°C
Rds(o) (m: )
380 340 300 260 220 180 140 1 2 3 4 5 6 7 8 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C
Is (A)
1E-02 25°C 1E-03 1E-04 1E-05 0.0 0.4 0.8 1.2 1.6 2.0 Vsd (Volts) Figure 6: Body-Diode Characteristics
5 Vds=10V Id=0.9A
200
4
3
Capacitance (pF)
150
Ciss
Vgs (Volts)
100 Coss 50 Crss
2
1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics Vds (Volts) Figure 8: Capacitance Characteristics
0
10.0
Tj(max)=150°C, Ta=25°C Rds(on) limited 100Ps 1ms 10Ps
16 Tj(max)=150°C Ta=25°C 12
10ms 0.1s
Power (W)
Id (Amps)
1.0
8
0.1
1s 10s DC
4
0.0 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZT ja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=415°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
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