ELM18810BA-S

30 8V Vgs =2V 20 Vgs=5V 15 Vgs =1.5V 20 Id(A) Id(A) 10 10 5 Vgs =1V 125°C 25°C 0 0 1 2 3 4 5 Vds(Volts) Figure 1: On-Regions Characteristi cs 0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs(Volts) Figure 2: Transfer Characteristics 50 1.6 Normalize ON-Resistance Id=6.5A 1.4 Vgs=1.8V Vgs=2.5V Vgs=4.5V Rds(on)(m: ) 40 Vgs =1.8V Vgs =2.5V 20 Vgs =4.5V 10 0 5 10 15 20 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 Id=6.5A 50 1E+01 1E+00 1E-01 125°C Rds(on)(m: ) Is(A) 40 125°C 1E-02 1E-03 30 20 25°C 10 0 2 1E-04 1E-05 4 6 8 0.0 0.2 25°C 0.4 0.6 0.8 1.0 Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd(Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=10V Id=7A 2000 1600 Capacitance (pF) Ciss 1200 800 Crss 400 0 Coss Vgs(Volts) 3 2 1 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 Vds(Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150°C Ta=25°C Rds(on) limited 10Ps 100Ps 1ms 0.1s 10ms 40 Tj(max)=150°C Ta=25°C 30 Id (Amps) Power (W) 10.0 20 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=83°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance