ELM18816BA-S

30 10V 3V 20 20 5V Vgs=5V 15 Id(A) Vgs =2V 10 Id(A) 10 125°C 5 Vgs =1.5V 0 0 1 2 3 4 5 Vds(Volts) Figure 1: On-Regions Characteristi cs 0 0.0 0.5 1.0 1.5 25°C 2.0 2.5 Vgs(Volts) 0.73 Figure 2: Transfer Characteristics 20 18 1.6 Normalize ON-Resistance Vgs=4.5V Id=5A 1.4 Vgs=10V Id=8A 1.2 Vgs=2.5V Id=4A Rds(on)(m: ) Vgs =2.5V 16 14 12 Vgs =10V 10 0 5 10 15 20 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs =4.5V 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 Id=8A 35 1E+01 1E+00 1E-01 125°C Rds(on)(m: ) 30 Is(A) 25 20 15 10 0 2 4 25°C 125°C 1E-02 1E-03 1E-04 1E-05 25°C 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Vsd(Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=15V Id=8A 2000 1600 Capacitance (pF) Ciss 1200 800 Crss 400 0 Coss Vgs(Volts) 3 2 1 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 Vds(Volts) Figure 8: Capacitance Characteristics 0.73 10 15 20 100.0 Tj(max)=150°C Ta=25°C Rds(on) limited 10Ps 100Ps 1ms 0.1s 10ms 40 Tj(max)=150°C Ta=25°C 30 Id (Amps) Power (W) 10.0 20 1.0 1s 10s DC 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=83°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance