ELM18820BA-S

30 10V 3V 4V 20 Vgs =2V 20 Vgs=5V 15 Id(A) Id(A) 10 Vgs =1.5V 10 5 125°C 25°C 0 0 1 2 3 4 5 Vds(Volts) Figure 1: On-Regions Characteristi cs 0 0.0 0.5 1.0 1.5 2.0 2.5 Vgs(Volts) Figure 2: Transfer Characteristics 50 Vgs =1.8V 40 Vgs =2.5V 1.6 Normalize ON-Resistance Vgs=1.8V Id=2A 1.4 Vgs=4.5V Id=5A 1.2 Id=7A Vgs=2.5V Id=4A Vgs=10V 1.0 Rds(on)(m: ) 30 Vgs =4.5V 20 10 0 0 5 10 15 20 Id(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Vgs =10V 0.8 0 50 100 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 80 Id=7A 70 1E+01 1E+00 1E-01 125°C Rds(on)(m: ) 60 50 40 30 20 10 0 2 4 6 8 10 1E-05 Vsd(Volts) Figure 6: Body-Diode Characteristics Vgs(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25°C 125°C Is(A) 1E-02 1E-03 1E-04 25°C 5 Vds=10V 4 1400 Id=7A Capacitance (pF) 1200 1000 800 600 400 200 0 Crss Coss Ciss Vgs(Volts) 3 2 1 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 Vds(Volts) Figure 8: Capacitance Characteristics 100 Tj(max)=150°C, Ta=25°C 10Ps 40 Tj(max)=150°C Ta=25°C 30 Id (Amps) 100Ps 1ms 1 Rds(on) limited 0.1 0.1 10 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 DC 10s 1s 10ms 100m Power (W) 10 20 10 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZT ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=83°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Pd 0.1 Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance