30 10V 25 20 5V 4.5V
20 Vds=5V 15
Id (A)
Id (A)
4V 15 10 Vgs=3.5V 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 50
10 125°C 5 25°C 0 2 2.5 3 3.5 4 4.5 Vgs (Volts) Figure 2: Transfer Characteristics 1.8
Normalized On-Resistance
45
1.6
Vgs=10V Id=8A
Rds(on) (m:)
40 35 30
Vgs=4.5V
1.4 Vgs=4.5V Id=6A
Vgs=10V 25 20 0 4 8 12 16 20
1.2
1
0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
100 90 80 Id=8A
1.0E+01 1.0E+00 125°C
Rds(on) (m:)
70 60 50 40 30 20 10 2 4 25°C
125°C
1.0E-01
Is (A)
1.0E-02 1.0E-03 1.0E-04 1.0E-05 25°C
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Vsd (Volts) Figure 6: Body-Diode Characteristics
700 10 8 Vds=20V Id=8A 600 Ciss
6 4 2
Capacitance (pF)
500 400 300 200 100 Coss Crss
Vgs (Volts)
0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Tj(max.)=175°C, Ta=25°C 10Ps 10.0 Rds(on) limited 1ms 10ms 1.0 DC 100Ps
0 0 5 20 25 30 35 Vds (Volts) Figure 8: Capacitance Characteristics 10 15 40
200 160 Tj(max.)=175°C Ta=25°C
Power (W)
Id (Amps)
120 80 40 0 0.0001
0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZTjc Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Tc+Pdm.ZTjc.RTjc RTjc=7.5°C/W 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
10
25 20 15 10 5 0 0.0001 0.001 0 25 50 75 100 125 150 175 Tcase (°C) Figure 13: Power De-rating (Note B)
Id(A), Peak Avalanche Current
8 6 4 2 0 0.00001 Ta=25°C
ta
L Id BV V dd
Time in avalanche, ta (s) Figure 12: Single Pulse Avalanche capability
10 8
Power Dissipation (W)
50 Ta=25°C 40
Current rating ID(A)
Power (W)
0 25 50 75 100 125 150 175
6 4 2 0 Tcase (°C) Figure 14: Current De-rating (Note B)
30 20 10 0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10
ZTja Normalized Transient Thermal Resistance
1
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=60°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Pd Single Pulse Ton 0.001 0.00001 T 100 1000
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
30 -10V 25 -6V 20 -5V -4.5V
25 Vds=-5V 20 15 10
-Id (A)
Vgs=-4V 15 10 5 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 80 70 Vgs=-4.5V -3V
-Id (A)
-3.5V 5
125°C 25°C 0 0 1 2 3 4 5 -Vgs (Volts) Figure 2: Transfer Characteristics
1.80
Normalized On-Resistance
1.60 1.40 1.20 1.00 0.80
Vgs=-10V Id=-8A
Rds(on) (m: )
60 50 40 Vgs=-10V 30 20 0 4 8 12 16 20 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Vgs=-4.5V Id=-6A
0
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
120 Id=-8A 100
1.0E+01 1.0E+00 125°C 1.0E-01
Rds(on) (m: )
-Is (A)
80
125°C
1.0E-02 1.0E-03 25°C 1.0E-04
60
40
25°C
1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics
20 2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
10 Vds=-20V Id=-8A Capacitance (pF)
1200 1000 800 600 400 Coss 200 0 0 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 4 16 0 Crss 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 Ciss
8 -Vgs (Volts)
6
4
2
0
100.0 Tj(max.)=175°C, Ta=25°C 10Ps -Id (Amps) Power (W) 10.0 Rds(on) limited 100Ps 1.0 DC 1ms
200 160 120 80 40 0 0.0001
Tj(max.)=175°C Ta=25°C
0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZT jc Normalized Transient Thermal Resistance 10 100
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T Tj,pk=Tc+Pdm.ZTjc.RTjc RTjc=3°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
10
-Id(A), Peak Avalanche Current
ta
8
Power Dissipation (W)
L Id BV V dd
60 50 40 30 20 10 0
6
4
Ta=25°C
2 0.00001
0.0001
0.001
0
25
50
75
100
125
150
175
Time in avalanche, ta (s) Figure 12: Single Pulse Avalanche capability
T case (°C) Figure 13: Power De-rating (Note B)
10 8 6 4 2 0 0 25 50 75 100 125 150 175 T case (°C) Figure 14: Current De-rating (Note B)
60 50 40 30 20 10 0 0.001 Ta=25°C
Current rating -Id(A)
Power (W)
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10
ZT ja Normalized Transient Thermal Resistance
1
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=50°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 Pd Single Pulse Ton 0.001 0.00001 T 100 1000
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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