ELM33410CA-S

On-Region Characteristics. VGS= 4.5V 2.5V 3.0V R , Normalized Drain-source on-resistance 20 On-Resistance Variation with Drain Current and Gate Voltage. 2 VGS= 2.0V ID, Drain current(A) 16 1.8 1.6 2.5V 12 2.0V 1.4 3.0V 8 DS(ON) 1.2 1 0.8 0 4 8 3.5V 4.5V 4 1.5V 4.0V 0 0 0.5 1 1.5 2 2.5 3 VGS, Drain to Source Voltage(V) 12 16 20 ID, Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage. On-Resistance Variation with Temperature. R , Normalized Drain-source on-resistance 1.6 ID= 5A VGS= 4.5V RDS(ON), On-resistance( ) 0.1 ID=2.5A 1.4 0.08 1.2 0.06 TA= 125° C DS(ON) 1 0.8 0.04 0.02 TA= 25° C 0.6 -50 -25 0 25 50 75 100 125 150 0 0 2 3 4 5 TJ, Junction Temperature(°C) VGS, Gate to Source Voltage(V) 20 VDS= 5V TA= -55°C 125°C Is, Reverse Drain Current (A) Transfer Characteristics. Body Diode Forword Voltage Variation with Source Current and Temperature. 100 VGS= 0V 16 10 1 0.1 0.01 0.001 TA= 125° C 25°C -55°C ID, Drain Current(A) 25°C 12 8 2 0 0.5 1 1.5 2 2.5 3 VGS, Gate to Source Voltage(V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forward Voltage(V) Gate-Charge Characteristics VGS, Gate-Saurce Voltage(V) 5 ID = 5A VDS= 5V Capacitance Characteristics 1100 f =1MHz VGS=0 V 4 900 Capacitance(pF) 10V Ciss 700 500 300 100 3 2 1 0 0 2 4 6 8 10 Coss Crss 0 4 8 12 16 20 0 Qg Gate Charge (nC) VDS, Drain to Source Voltage(V) Maxmum Safe Operating Area. 100 20 Single Puise Maximum Power Dissipation. SINGLE PULSE R JA=100°C/W TA=25° C RDS(ON) LIMIT ID,Drain Current(A) 1ms 10 10ms 15 Power (W) 10 100 100ms 1 10s DC 0.1 1s 12 8 VGS =4.5V SINGLE PULSE R JA=100°C/W TA=25°C 4 0.01 0.1 1 0 0.0001 0.001 0.01 0.1 1 10 100 1000 VGS,Drain-Source Voltage(V) Single Pulse Time(SEC) Transisent Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 1 10 D=0.5 0.2 0.1 P(pk) R R JA JA (t) = r(t) * R =100° C/W 0.05 0.02 0.01 Single Pulse t1 t2 TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2 100 300 Time(SEC)