ELM34414AA-S

Output Characteristics 50 45 VGS=10thru 4V 40 Transfer Characteristics 40 35 30 ID - Drain Current(A) ID - Drain Current(A) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 3V 25 20 15 TC=125° C 10 5 0 0.0 25° C -55° C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS- Drain-to-Source Voltage(V) VGS- Gate-to-Source Voltage(V) On-Resistance vs. Drain Current 0.015 Capacitance 2500 f = 1 MHz VGS=0V Ciss rDS(on) - On-Resistance( ) 0.012 VGS=4.5V 0.009 VGS=10V 0.006 C- Capacitance(pF) 2000 1500 1000 Coss 500 Crss 0.003 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current(A) VDS- Drain-to-Source Voltage(V) Gate Charge 10 On-Resistance vs. Junction Temperature 2.00 VGS=10V ID=15A VGS- Gate-to-Source Voltage(V) rDS(on) - On-Resistance( ) (Normalized) 8 12 16 20 24 VDS=10V ID=15A 8 1.75 1.50 1.25 1.00 0.75 0.50 -50 6 4 2 0 0 4 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge(nC) TJ- Junction Temperature(° C) Source-Drain Diode Forward Voltage 60 On-Resistance vs.Gate-to-Source Voltage 0.040 ) 0.032 IS - Source Current(A) TJ=150° C 10 rDS(ON) - On-Resistance( 0.024 0.016 ID=15A 0.008 TJ=25° C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0 2 4 6 8 10 VSD- Source-to-Drain Voltage(V) VGS - Gate-to-Source Voltage(V) Threshold Voltage 0.4 0.2 ID = 250 A 40 50 Single Pulse Power VGS(th) Variance(V) 0.0 Power(W) 30 TA=25° C 20 -0.2 -0.4 -0.6 -0.8 -50 10 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 10 TJ- Temperature(° C) Time(sec) Safe Operating Area, Junction-to Ambient 100 Limited by rDS(on) 10 100 s,10 s ID - Drain Current(A) 1ms 1 10ms 100ms 0.1 TA=25°C Single Pulse 1s 10s dc,100s 0.01 0.1 10 100 1 VDS- Drain-to-Source Voltage(V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 0.02 Single Pulse 0.01 10 -4 t1 1. Duty Cycle, D = t2 2. R JA(t) = 50 ° CW 3. TJM - TA = PDM * R JA(t) 4. Surface Mounted -3 10 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec)