ELM34802AA-S

On-Region Characteristics. 10 VGS= 10V 6.0V 4.5V On-Resistance Variation with Drain Current and Gate Voltage. R , Noemalized Drain-source on-resistance 2 1.8 1.6 1.4 5.0V VGS= 4.0V 4.5V ID, Drain-source current(A) 8 4.0V 6 4 DS(ON) 3.5V 1.2 1 0.8 6.0V 7.0V 10V 2 3.0V 0 0 1 2 3 4 0 2 4 6 8 10 VDS, Drain-Source Voltage(V) ID, Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage. On-Resistance Variation with Temperature. RDS(ON), On-resistance(OHM) R , Normalized Drain-source on-resistance 1.6 ID= 4.5A VGS= 10V 0.275 ID=3A 1.4 0.225 1.2 0.175 DS(ON) 1 0.8 0.125 TA= 125° C TA= 25° C 0.075 0.6 -50 0.025 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, Junction Temperature(°C) VGS, Gate to Source Voltage(V) Transfer Characteristics. Is, Reverse Drain Current (A) 10 VDS= 5V TA= -55°C 125°C Body Diode Forword Voltage Variation with Source Current and Temperature. 10 VGS= 0V 8 1 TA= 125°C 25°C -55°C ID, Drain Current(A) 25°C 6 0.1 4 0.01 2 0.001 0 1 2 3 4 5 6 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, Gate to Source Voltage(V) VSD, Body Diode Forword Voltage(V) Gate-Charge Characteristics 10 ID = 4.5A VDS= 5V 15V Capacitance Characteristics 400 8 Capacitance(pF) 300 10V Ciss 200 VGS (Voltage) 6 4 100 Coss Crss 0 5 10 15 20 25 30 2 0 0 0 1 2 3 4 5 6 7 Qg (nC) VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. 30 Single Pulse Maximum Power Dissipation. 5 10 100 N)L S(O RD T IMI us 4 ID, Drain Current(A) 3 1 0.3 0.1 0.03 1m s 10m s 100 ms Power(W) 3 VGS= 10V SINGLE PULSE R JA=125°C/W TA=25°C 0.1 0.3 1 3 1s DC 2 1 VGS= 10V SINGLE PULSE R JA=125°C/W TA=25°C 0.1 1 10 100 300 0.01 10 30 50 0 0.01 VDS, Drain-Source Voltage(V) Single pulse time(SEC) Transient Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 Single Pulse P(pk) t1 t2 0.02 R JA(t) = r(t) * R R JA=125°C/W TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2 0.001 0.01 0.1 1 10 100 300 0.01 0.0001 t1 Time(Sec)