ELM36402EA-S

On-Region Characteristics. VGS= 4.5V 2.5V 3.0V 2.0V On-Resistance Variation with Drain Current and Gate Voltage. R , Normalized Drain-source on-resistance 2.5 20 ID, Drain current(A) 16 2 VGS= 2.0V 12 DS(ON) 1.5 2.5V 3.0V 4.5V 8 1.5V 4 1 0 0 0.4 0.8 1.2 1.6 2 0.5 0 5 10 15 20 VDS, Drain to Source Voltage(V) ID, Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage. On-Resistance Variation with Temperature. RDS(ON), On-resistance(OHM) RDS(ON), Normalized Drain-source on-resistance 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 0.08 ID=6.5A 0.06 ID= 6.5A VGS= 4.5V 0.04 TA= 125°C 0.02 TA= 25°C 0 1 2 3 4 5 TJ, Junction Temperature(°C) VGS, Gate to Source Voltage(V) Transfer Characteristics. Is, Reverse Drain Current (A) 20 VDS= 5V Body Diode Forword Voltage Variation with Source Current and Temperature. 100 VGS= 0V 125°C 25°C TA= -55°C 10 1 0.1 0.01 0.001 TJ= 125°C 25°C -55°C ID, Drain Current(A) 15 10 5 0 0.5 1 1.5 2 2.5 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VGS, Gate to Source Voltage(V) VSD, Body Diode Forward Voltage(V) Gate-Charge Characteristics VGS, Gate-Source Voltage(V) 5 ID = 6.5A VDS= 5V Capacitance Characteristics 1800 f =1MHz VGS=0 V 4 10V 1500 Capacitance(pF) 3 1200 Ciss 900 600 300 2 1 0 0 2 4 6 8 10 12 14 Coss Crss 0 5 10 15 20 0 Qg, Gate Charge (nC) VDS, Drain to Source Voltage(V) Maxmum Safe Operating Area. 100 RDS(ON) LIMIT 100 1ms s 4 5 Single Pulse Maximum Power Dissipation. SINGLE PULSE VGS= 10V R JA=156° C/W TA=25° C ID,Drain Current(A) 10 Power(W) 10 100 10ms 1 1s DC 0.1 100ms 3 2 VGS =4.5V SINGLE PULSE R JA=156° C/W TA=25°C 1 0.01 0.1 1 0 0.1 1 10 100 1000 VGS,Drain-Source Voltage(V) Single Pulse Time(SEC) Transient Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.02 Single Pulse R R JA JA (t) = r(t) * R =156°C/W P(pk) t1 t2 TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2 0.01 0.1 1 10 100 300 0.01 0.0001 0.001 t1 Time(Sec)