ELM36600EA-S

On-Region Characteristics. VGS= 10V 6.0V 4.5V On-Resistance Variation with Drain Current and Gate Voltage. R , Noemalized Drain-source on-resistance 2 1.8 1.6 1.4 5.0V VGS= 4.0V 4.5V 10 ID, Drain-source current(A) 8 4.0V 6 4 DS(ON) 3.5V 1.2 1 0.8 6.0V 7.0V 10V 2 3.0V 0 0 1 2 3 4 0 2 4 6 8 10 VDS, Drain-Source Voltage(V) ID, Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage. On-Resistance Variation with Temperature. RDS(ON), On-resistance(OHM) R , Normalized Drain-source on-resistance 1.6 ID= 3.5A VGS= 10V 0.275 ID=2A 1.4 0.225 1.2 0.175 DS(ON) 1 0.8 0.125 TA= 125°C TA= 25°C 0.075 0.6 -50 0.025 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, Junction Temperature(°C) VGS, Gate to Source Voltage(V) Transfer Characteristics. Is, Reverse Drain Current (A) 10 VDS= 5V TA= -55°C 125°C Body Diode Forword Voltage Variation with Source Current and Temperature. 10 VGS= 0V 8 1 TA= 125°C 25°C -55°C ID, Drain Current(A) 25°C 6 0.1 4 0.01 2 0.001 0 1 2 3 4 5 6 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, Gate to Source Voltage(V) VSD, Body Diode Forword Voltage(V) Gate-Charge Characteristics 10 ID = 3.5A VDS= 5V 15V Capacitance Characteristics 400 Capacitance(pF) 8 10V 300 Ciss 200 VGS (Voltage) 6 4 100 Coss Crss 0 5 10 15 20 25 30 2 0 0 0 1 2 3 4 5 6 7 Qg (nC) VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. 30 Single Pulse Maximum Power Dissipation. 5 10 100 us S (O RD T IMI N)L 4 ID, Drain Current(A) 3 1 0.3 0.1 0.03 1m s 10m s 100 ms Power(W) 30 50 3 VGS= 10V SINGLE PULSE R JA=150°C/W TA=25°C 0.1 0.3 1 3 1s DC 2 1 VGS= 10V SINGLE PULSE R JA=150°C/W TA=25°C 0.1 1 10 100 300 0.01 10 0 0.01 VDS, Drain-Source Voltage(V) Single pulse time(SEC) On-Region Characteristics RDS(ON),Normalized Drain-Source On-Resistance 10 On-Resistance Variation with Drain Current and Gate Voltage. 3 VGS= -10V ID,Drain Current(A) 8 - 6.0V VGS=-3.5V - 4.5V - 4.0V - 3.5V 2.5 6 2 - 4.0V - 4.5V - 5.0V - 6.0V -10.0V 4 1.5 2 1 0 0 1 2 3 4 5 0.5 0 2 4 6 8 10 - VDS,Drain-Source Voltage(V) - ID,Drain Current(A) On-Resistance Variation with Temperature 1.6 On-Resistance Variation with Gate-to-Source Voltage. 0.4 RDS(ON),Normalized Drain-Source On-Resistance 1.4 RDS(ON),On-Resistance(OHM) ID= -2.3A VGS= -10V ID = -1.5A 0.3 1.2 TA=125°C 0.2 1 0.8 0.1 TA=25°C 0.6 -50 -25 0 25 50 75 100 125 150 0 2 4 5 6 10 TJ,Junction Temperature(°C) - VGS,Gate To Source Voltage(V) Transfer Characteristics 5 10 Body Diode Forward Voltage Variation With Source Current and Temperature. -IS,Reverse Drain Current(A) VDS= - 5V -ID,Drain Current(A) 4 TA= - 55°C 125°C 25°C 1 VGS=0V TA=125°C 3 2 1 0.1 25°C 0.01 - 55°C 0.001 0 1.5 0.0001 2.5 3.5 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS,Gate To Source Voltage(V) -VSD,Body Diode Forward Voltage(V) G ate-Charge Characteristics 10 ID = -2.0A V DS= -5V -10V Capacitance Characteristics 400 Capacitance(pF) 8 300 VGS (Voltage) 6 -15V 200 Ciss 4 100 2 Coss 0 0 0 1 2 3 4 5 6 Crss 0 5 10 15 20 25 30 Q g (nC) VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. 30 Single Pulse Maximum Power Dissipation. 5 10 100 us S (O RD T IMI N)L 4 ID, Drain Current(A) 3 1 0.3 0.1 0.03 1m s 10m s 100 ms Power(W) 30 50 3 VGS= 10V SINGLE PULSE R JA=150°C/W TA=25°C 0.1 0.3 1 3 1s DC 2 1 VGS= 10V SINGLE PULSE R JA=150°C/W TA=25°C 0.1 1 10 100 300 0.01 10 0 0.01 VDS, Drain-Source Voltage(V) Single pulse time(SEC) Transient Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 Single Pulse P(pk) t1 t2 0.02 R JA(t) = r(t) * R R JA=150°C/W TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2 0.001 0.01 0.1 1 10 100 300 0.01 0.0001 t1 Time(Sec)