ELM36802EA-S

On-Region Characteristics. 10 ID,Drain-Source Current(A) VGS=10V 4.5V 3.0V 2.5V RDS(ON), Normalized Drain-Source on-Resistance On-Resistance Variation With Drain Current and Gate Voltage. 2.4 2.2 2 1.8 1.6 1.4 3.5V 1.2 1 0.8 0 2 4 6 ID,Drain Current(A) 10V 8 10 4.5V VGS=2.0V 2.5V 3.0V 8 6 2.0V 4 2 1.5V 0 0 1 2 3 4 VDS,Drain-Source Voltage(V) RDS(ON),Normalized Drain-Source On-Resistance 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 On-Resistance Variation With Temperature. ID=3A VDS=4.5V On-Resistance Variation vs. Gate-Source Voltage. 0.20 ID=2A 0.15 RDS(ON)(OHM) 0.10 125°C 25°C 0.05 0 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 TJ,Junction Temperature(°C) VGS,Gate to Source Voltage(V) Is, Reverse Drain Current (A) Transfer Characteristics. 10 VDS=5V 8 ID,Drain Current(A) Body Diode Forword Voltage Variation with Source Current and Temperature. 10 VGS= 0V TA=55°C 25°C 125°C 1 TA= 125°C 25°C -55°C 6 4 2 0 0 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 2 3 4 VSD, Body Diode Forward Voltage(V) VGS,Gate To Source Voltage(V) G ate-Charge Characteristics 5 ID = 3.5A VDS= 5V 15V 500 C apacitance Characteristics 4 10V 400 C iss VGS (Voltage) 2 Capacitance(pF) 3 300 200 1 100 C oss 0 0 1 2 3 4 5 6 0 0 5 10 C rss 15 20 25 30 Q g (nC) V DS ,Drain to Source Voltage(V) Maximum Safe Operating Area. 30 Single Pulse Maximum Power Dissipation. 5 10 100 us S (O RD T IMI N)L 4 ID, Drain Current(A) 3 1 0.3 0.1 0.03 1m s Power(W) 30 50 10m s 100 ms 1s DC 3 VGS= 10V SINGLE PULSE R JA=150°C/W TA=25°C 0.1 0.3 1 3 2 1 VGS= 10V SINGLE PULSE R JA=150°C/W TA=25°C 0.1 1 10 100 300 0.01 10 VDS, Drain-Source Voltage(V) 0 0.01 Single pulse time(SEC) Transient Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 Single Pulse P(pk) t1 t2 0.02 R JA(t) = r(t) * R R JA=150°C/W TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2 0.001 0.01 0.1 1 10 100 300 0.01 0.0001 t1 Time(Sec)