ELM7S00B

CMOS LOGIC IC ■General description ELM7S00B 2-input NAND gate ELM7S00B is CMOS 2-input NAND gate IC. It realizes high speed operation similar to LS-TTL with lower power consumption by CMOS features. The inner circuit structure of 3-stage logic gate obtains wider noise immunity and constant output. ■Features • Same electrical characteristic as 74HC series (output current is around 1/2 of 74HC series) • Low consumption current : Idd=1.0µA(Max.)(Top=25°C) • Wide power voltage range : 2.0V to 6.0V • High speed : Tpd=5ns(Typ.)(Vdd=5.0V) • Symmetrical output impedance : | Ioh |=Iol=2mA (Min.)(Vdd=4.5V) • Small package : SOT-25 ■Application • Cell phones • Digital cameras • Portable electrical appliances like PDA, etc. • Computers and peripherals • Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc. • Modification inside print board, adjustment of timing, solution to noise ■Selection guide ELM7S00B-EL Symbol a b c Function Product version Taping direction 00 : 2-input NAND gate B EL : Refer to PKG file ELM7S 0 0 B - EL ↑↑ ↑ abc ■Maximum absolute ratings Parameter Power supply voltage Input voltage Output voltage Input protection diode current Output parasitic diode current Output current VDD/GND current Power dissipation Storage temperature Symbol Vdd Vin Vout Iik Iok Iout Idd, Ignd Pd Tstg Limit -0.5 to +7.0 -0.5 to Vdd+0.5 -0.5 to Vdd+0.5 ±20 ±20 ±25 ±25 200 -65 to +150 Unit V V V mA mA mA mA mW °C 3-1 CMOS LOGIC IC ■Suggested operating condition Power voltage Input voltage Output voltage Operating temperature High-input down-time Parameter ELM7S00B 2-input NAND gate Symbol Vdd Vin Vout Top tr, tf Limit 2.0 to 6.0 0 to Vdd 0 to Vdd -40 to +85 Vdd=2.0V 0 to 1000 Vdd=4.5V 0 to 500 Vdd=6.0V 0 to 400 Unit V V V °C ns ■Pin configuration SOT-25 (TOP VIEW) Pin No. 1 2 3 4 5 Pin name INB INA GND OUTX VDD INA Low Low High High Input INB Low High Low High Output OUTX High High High Low ■AC electrical characteristics Parameter Output transition time Propagation delay-time Sym. tTLH tTHL tPLH tPHL Sym. tTLH tTHL tPLH Propagation delay-time tPHL Input capacity Equivalent inner capacity Cin Cpd Vdd 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 Top=25°C Min. Typ. Max. 4 10 3 10 5 15 5 15 Top=25°C Min. Typ. 18 7 6 14 6 6 16 8 7 16 6 5 5 10 Unit ns ns CL=15pF, tr=tf=6ns, Vdd=5V Condition Refer to test circuit Refer to test circuit Parameter Output transition time * Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd • Vdd • fin+Idd CL=50pF, tr=tf=6ns Top=-40 to +85°C Unit Condition Max. Min. Max. 125 155 25 31 ns 21 26 Refer to test circuit 125 155 25 31 ns 21 26 100 125 20 25 ns 17 21 Refer to test circuit 100 125 20 25 ns 17 21 10 10 pF pF 3-2 CMOS LOGIC IC ■DC electrical characteristics Parameter Sym. Vih Input voltage Vil Vdd 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 ELM7S00B 2-input NAND gate Top=-40 to +85°C Min. Max. 1.50 3.15 4.20 0.50 1.35 1.80 1.90 4.40 5.90 4.13 5.63 0.10 0.10 0.10 0.33 0.33 -1.0 1.0 10.0 Unit V V Ioh=-20µA Ioh=-2mA Ioh=-2.6mA Iol=20µA Condition Voh Output voltage Vol Input current Static current Iin Idd Top=25°C Min. Typ. Max. 1.50 3.15 4.20 0.50 1.35 1.80 1.90 2.00 4.40 4.50 5.90 6.00 4.18 4.36 5.68 5.84 0.00 0.10 0.00 0.10 0.00 0.10 0.11 0.26 0.13 0.26 -0.1 0.1 1.0 V Vin= Vih or Vil V µA µA Vin=Vih Iol=2mA Iol=2.6mA Vin=Vdd or GND Vin=Vdd or GND ■Test circuit ��� ■Measured wave pattern ��� ��� ����� ����������� ��� ����� ������ ����� ��� ��� ��� ���� ��� ��� ��� ��� ���� ��� ��� ��� ��� ��� �� ������ ��� ��� ��� ��� ���� ���� * Output should be opened when measuring current consumption. ■Marking SOT-25 Symbol a b c Mark E 1 A to Z (except I, O, X) Content ELM7S series ELM7S00B Lot No. � � � 3-3