ELM7SHU04XB

HIGH SPEED CMOS LOGIC IC ■General description　 ELM7SHU04xB Unbuffer Inverter ELM7SHU04xB is CMOS unbuffer inverter which is suitable for battery-operated devices because of its low voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which allows longtime operation of devices. The internal circuit which is 1-stage unbuffer type can be used for crystal oscillation. ■Features ・ Same electrical characteristic and high speed operation as 74VHC series ・ Low consumption current ： Idd=1.0μA(Max.)(Top=25℃ ) ・ Wide power voltage range ： 2.0V～5.5V ・ Wide input voltage range : Vih=5.5V(Max.)(Vdd=0～5.5V) ・ High speed ： Tpd=2ns(Typ.) (Vdd=5.0V) ・ Small package : SOT-25, SSOT-25(SC-88A) ・ Same function and pin configuration as ELM7SxxB ■Application ・ Cell phones ・ Digital cameras ・ Portable electrical appliances like PDA, etc. ・ Computers and peripherals ・ Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc. ・ Modification inside print board, adjustment of timing, solution to noise ・ Power voltage change from 5V to 3V ■Selection guide ELM7SHU04xB-EL Symbol a b c d Function Package Product version Taping direction U04: Unbuffer Inverter M : SOT-25 T : SSOT-25(SC-88A) B EL : Refer to PKG file ELM7SH U04 x B - EL ↑ ↑↑ ↑ a bc d ■Maximum absolute ratings Parameter Power supply voltage Input voltage Output voltage Input protection diode current Output parasitic diode current Output current VDD/GND current Power dissipation Storage temperature Symbol Vdd Vin Vout Iik Iok Iout Idd, Ignd Pd Tstg Limit -0.5～+6.0 -0.5～+6.0 -0.5～Vdd+0.5 -20 ±20 ±25 ±50 150 -65～+150 Unit V V V mA mA mA mA mW ℃ 1 HIGH SPEED CMOS LOGIC IC ■Suggested operating condition Parameter Power voltage Input voltage Output voltage Operating temperature High-input down-time ELM7SHU04xB Unbuffer Inverter Symbol Vdd Vin Vout Top tr, tf Limit 2.0～5.5 0～5.5 0～Vdd -40～+85 Vdd=3.3±0.3V Vdd=5.0±0.5V Unit V V V ℃ 0～200 0～100 ns ■Pin configuration TOP VIEW Pin No. 1 2 3 4 5 Pin name NC INY GND OUTX VDD Input INY Low High Output OUTX High Low ■DC electrical characteristics Parameter Sym. Vih Input voltage Vil Vdd 2.0 3.0 5.5 2.0 3.0 5.5 2.0 3.0 4.5 3.0 4.5 2.0 3.0 4.5 3.0 4.5 5.5 5.5 Min. 1.70 2.40 4.40 Top=25℃ Typ. Max. Top=-40～+85℃ Min. Max. 1.70 2.40 4.40 0.30 0.60 1.10 1.80 2.70 4.00 2.48 3.80 0.20 0.30 0.50 0.44 0.44 -1.0 1.0 10.0 Unit V Condition 0.30 0.60 1.10 1.80 2.70 4.00 2.58 3.94 2.00 3.00 4.50 V Vin=Vil Ioh=-50μA V Vin=GND Vin=Vih V Vin=Vdd μA μA Iol=4mA Iol=8mA Vin=Vdd or GND Vin=Vdd or GND Ioh=-4mA Ioh=-8mA Iol=50μA Voh Output voltage Vol Input current Static current Iin Idd -0.1 0.20 0.30 0.50 0.36 0.36 0.1 1.0 2 HIGH SPEED CMOS LOGIC IC ■AC electrical characteristics Parameter Sym. tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL Cin Cpd Vdd 3.3±0.3 3.3±0.3 5.0±0.5 5.0±0.5 5.0 CL 15 50 15 50 ELM7SHU04xB Unbuffer Inverter tr=tf=3ns Propagation delay-time Top=25℃ Min. Typ. 2.8 2.7 4.5 4.2 2.4 2.2 3.6 3.5 2.0 16.0 Top=-40～+85℃ Unit Max. Min. Max. 8.9 1.0 10.5 8.9 1.0 10.5 11.4 1.0 13.0 11.4 1.0 13.0 ns 5.5 1.0 6.5 5.5 1.0 6.5 7.0 1.0 8.0 7.0 1.0 8.0 10.0 10.0 Condition Refer to test circuit Input capacity Equivalent inner capacity pF Vin=Vdd or GND pF f=1MHz * Cpd is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. Averaged operating current consumption at non load is calculated as following formula: Idd(opr)=Cpd・Vdd・fin+Idd ■Test circuit ��� ■Measured wave pattern ��� ��� ����� ����������� ��� ����� ������ ����� �� ��� ��� ��� ��� ��� ��� ��� ��� ��� ������ ��� ���� ��� ��� ���� * Output should be opened when measuring current consumption. ■Marking SSOT-25 SOT-25 No. ① ② ③ Mark F 6 A～Z (except I, O, X) Content ELM7SH series ELM7SHU04xB Lot No. 3