HM534253BJ-8

EO Description Features HM534253B Series 1 M VRAM (256-kword × 4-bit) E0165H10 (Ver. 1.0) (Previous ADE-203-204D (Z)) Jul. 6, 2001 (K) The HM534253B is a 1-Mbit multiport video RAM equipped with a 256-kword × 4-bit dynamic RAM and a 512-word × 4-bit SAM (serial access memory). Its RAM and SAM operate independently and asynchronously. It can transfer data between RAM and SAM. In addition, it has two modes to realize fast writing in RAM. Block write and flash write modes clear the data of 4-word × 4-bit and the data of one row (512-word × 4-bit) respectively in one cycle of RAM. And the HM534253B makes split transfer cycle possible by dividing SAM into two split buffers equipped with 256-word × 4-bit each. This cycle can transfer data to SAM which is not active, and enables a continuous serial access. • Multiport organization Asynchronous and simultaneous operation of RAM and SAM capability  RAM: 256-kword × 4-bit  SAM: 512-word × 4-bit • Access time  RAM: 60 ns/70 ns/80 ns/100 ns max  SAM: 20 ns/22 ns/25 ns/25 ns max • Cycle time  RAM: 125 ns/135 ns/150 ns/180 ns min  SAM: 25 ns/25 ns/30 ns/30 ns min • Low power  Active RAM: 413 mW max SAM: 275 mW max  Standby 38.5 mW max • High-speed page mode capability • Mask write mode capability • Bidirectional data transfer cycle between RAM and SAM capability • Split transfer cycle capability Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. LP ro du ct HM534253B Series • Block write mode capability • Flash write mode capability • 3 variations of refresh (8 ms/512 cycles)  RAS -only refresh  CAS -before-RAS refresh  Hidden refresh • TTL compatible EO Type No. HM534253BJ-6 HM534253BJ-7 HM534253BJ-8 HM534253BJ-10 HM534253BZ-6 HM534253BZ-7 HM534253BZ-8 HM534253BZ-10 SC SI/O0 SI/O1 DT/OE I/O0 I/O1 WE NC RAS A8 A6 A5 A4 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 2 Ordering Information Pin Arrangement HM534253BJ Series 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VSS SI/O3 SI/O2 SE I/O3 I/O2 DSF CAS QSF A0 A1 A2 A3 A7 (Top view) LP Access Time 60 ns 70 ns 80 ns 100 ns 60 ns 70 ns 80 ns 100 ns Package 400-mil 28-pin plastic SOJ (CP-28D) 400-mil 28-pin plastic ZIP (ZP-28) Data Sheet E0165H10 ro HM534253BZ Series I/O2 SE SI/O3 SC SI/O1 I/O0 WE RAS A6 A4 A7 A2 A0 CAS 2 4 6 8 10 12 14 16 18 20 22 24 26 28 1 3 5 7 9 11 13 15 17 19 21 23 25 27 DSF I/O3 SI/O2 VSS SI/O0 DT/OE I/O1 NC A8 A5 VCC A3 A1 QSF du ct (Bottom view) HM534253B Series EO Pin Description Pin Name A0 – A8 I/O0 – I/O3 SI/O0 – SI/O3 RAS CAS WE DT/ OE SC SE DSF QSF VCC VSS NC Function Address inputs RAM port data inputs/outputs SAM port data inputs/outputs Row address strobe Column address strobe Write enable Data transfer/output enable Serial clock SAM port enable Special function input flag Special function output flag Power supply Ground No connection LP Data Sheet E0165H10 3 ro du ct HM534253B Series Block Diagram Sense Amplifier & I/O Bus Block Write Flash Write Control Control Column Decoder Memory Array Input Data Control Address Mask Register Transfer Gate Data Register Serial Output Buffer Serial Input Buffer Mask Register Color Register SI/O0 – SI/O3 Input Buffer Output Buffer Timing Generator I/O0 – I/O3 Data Sheet E0165H10 4 RAS CAS DT/OE WE DSF SC SE SAM Column Decoder Transfer Gate Data Register SAM I/O Bus EO A0 – A8 Column Address Buffer Row Address Buffer Refresh Counter Row Decoder Serial Address Counter LP QSF ro du ct HM534253B Series EO Pin Functions Table 1 CAS L H H H H H H H H H H H DT/ OE WE X L L L L L H H H H H H X L L L H H L L L H H H Note: X: H or L. RAS (input pin): R AS is a basic RAM signal. It is active in low level and standby in high level. Row address and signals as shown in table 1 are input at the falling edge of RAS . The input level of these signals determine the operation cycle of the HM534253B. Operation Cycles of the HM534253B Input Level At The Falling Edge Of RAS SE X L DSF X L L DSF At The Falling Edge Of CAS — X X X X X L Operation Mode CBR refresh Write transfer Pseudo transfer Split write transfer Read transfer Split read transfer Read/mask write Mask block write Flash write Read/write Block write Color register read/write CAS (input pin): Column address and DSF signals are fetched into chip at the falling edge of CAS , which determines the operation mode of the HM534253B. CAS controls output impedance of I/O in RAM. A0 – A8 (input pins): Row address is determined by A0 – A8 level at the falling edge of RAS . Column address is determined by A0 – A8 level at the falling edge of CAS . In transfer cycles, row address is the address on the word line which transfers data with SAM data register, and column address is the SAM start address after transfer. WE (input pin): W E pin has two functions at the falling edge of RAS and after. When W E is low at the falling edge of RAS , the HM534253B turns to mask write mode. According to the I/O level at the time, write on each I/O can be masked. (WE level at the falling edge of RAS don’t care in read cycle.) When WE is high at the falling edge of RAS, a normal write cycle is executed. After that, WE switches read/write cycles as in a standard DRAM. In a transfer cycle, the direction of transfer is determined by WE level at the falling edge of RAS . When WE is low, data is transferred from SAM to RAM (data is written into RAM), and when WE is high, data is transferred from RAM to SAM (data is read from RAM). LP H X X X H L H L L X X X X X X H X L H L L H H X Data Sheet E0165H10 5 ro du ct HM534253B Series I/O0 – I/O3 (input/output pins): I/O pins function as mask data at the falling edge of RAS (in mask write mode). Data is written only to high I/O pins. Data on low I/O pins are masked and internal data are retained. After that, they function as input/output pins as those of a standard DRAM. In block write cycle, they function as address mask data at the falling edges of CAS . EO 6 DT/OE (input pin): D T/OE pin functions as D T (data transfer) pin at the falling edge of RAS and as OE (output enable) pin after that. When DT is low at the falling edge of RAS , this cycle becomes a transfer cycle. When DT is high at the falling edge of RAS , RAM and SAM operate independently. SC (input pin): SC is a basic SAM clock. In a serial read cycle, data outputs from an SI/O pin synchronously with the rising edge of SC. In a serial write cycle, data on an SI/O pin at the rising edge of SC is fetched into the SAM data register. SE(input pin): S E pin activates SAM. When S E is high, SI/O is in the high impedance state in serial read cycle and data on SI/O is not fetched into the SAM data register in serial write cycle. SE can be used as a mask for serial write because internal pointer is incremented at the rising edge of SC. SI/O0 – SI/O3 (input/output pins): SI/Os are input/output pins in SAM. Direction of input/output is determined by the previous transfer cycle. When it was a read transfer cycle, SI/O outputs data. When it was a pseudo transfer cycle or write transfer cycle, SI/O inputs data. DSF (input pin): DSF is a special function data input flag pin. It is set to high at the falling edge of R AS when new functions such as color register read/write, split transfer, and flash write, are used. DSF is set to high at the falling edge of CAS when block write is executed. QSF (output pin): QSF outputs data of address A8 in SAM. QSF is switched from low to high by accessing address 255 in SAM and from high to low by accessing 511 address in SAM. LP Data Sheet E0165H10 ro du ct HM534253B Series EO Operation of HM534253B RAM Port Operation RAM Read Cycle (DT/OE high, CAS high and DSF low at the falling edge of RAS, DSF low at the falling edge of CAS ) Row address is entered at the RAS falling edge and column address at the CAS falling edge to the device as in standard DRAM. Then, when WE is high and DT/OE is low while CAS is low, the selected address data outputs through I/O pin. At the falling edge of RAS , DT/OE and CAS become high to distinguish RAM read cycle from transfer cycle and CBR refresh cycle. Address access time (tAA) and RAS to column address delay time (tRAD) specifications are added to enable high-speed page mode. RAM Write Cycle (Early Write, Delayed Write, Read-Modify-Write) ( DT/OE high, C AS high and DSF low at the falling edge of RAS , DSF low at the falling edge of CAS ) • Normal Mode Write Cycle (W high at the falling edge of RAS ) E When CAS and WE are set low after driving RAS low, a write cycle is executed and I/O data is written in the selected addresses. When all 4 I/Os are written, WE should be high at the falling edge of RAS to distinguish normal mode from mask write mode. If WE is set low before the CAS falling edge, this cycle becomes an early write cycle and all I/O become in high impedance. Data is entered at the CAS falling edge. If WE is set low after the CAS falling edge, this cycle becomes a delayed write cycle. Data is input at the WE falling. I/O does not become high impedance in this cycle, so data should be entered with OE in high. If WE is set low after tCWD (min) and t AWD (min) after the CAS falling edge, this cycle becomes a readmodify-write cycle and enables read/write at the same address in one cycle. In this cycle also, to avoid I/O contention, data should be input after reading data and driving OE high. • Mask Write Mode (WE low at the falling edge of RAS) If WE is set low at the falling edge of RAS , the cycle becomes a mask write mode which writes only to selected I/O. Whether or not an I/O is written depends on I/O level (mask data) at the falling edge of RAS . Then the data is written in high I/O pins and masked in low ones and internal data is retained. This mask data is effective during the RAS cycle. So, in high-speed page mode, the mask data is retained during the page access. LP Data Sheet E0165H10 7 ro du ct HM534253B Series High-Speed Page Mode Cycle (DT/OE high, CAS high and DSF low at the falling edge of RAS) High-speed page mode cycle reads/writes the data of the same row address at high speed by toggling C AS while RAS is low. Its cycle time is one third of the random read/write cycle. In this cycle, read, write, and block write cycles can be mixed. Note that address access time (tAA), RAS to column address delay time (tRAD), and access time from CAS precharge (t ACP ) are added. In one RAS cycle, 512-word memory cells of the same row address can be accessed. It is necessary to specify access frequency within tRASP max (100 µs). Color Register Set/Read Cycle (CAS high, DT/OE high, WE high and DSF high at the falling edge of RAS ) In color register set cycle, color data is set to the internal color register used in flash write cycle or block write cycle. 4 bits of internal color register are provided at each I/O. This register is composed of static circuits, so once it is set, it retains the data until reset. Color register set cycle is just as same as the usual write cycle except that DSF is set high at the falling edge of R AS, and read, early write and delayed write cycle can be executed. In this cycle, the HM534253B refreshes the row address fetched at the falling edge of RAS . Flash Write Cycle (CAS high, DT/OE high, WE low, and DSF high at the falling edge of RAS) In a flash write cycle, a row of data (512-word × 4-bit) is cleared to 0 or 1 at each I/O according to the data of color register mentioned before. It is also necessary to mask I/O in this cycle. When CAS and DT/OE are set high, WE is low, and DSF is high at the falling edge of RAS, this cycle starts. Then, the row address to clear is given to row address and mask data is given to I/O. Mask data is as same as that of a RAM write cycle. High I/O is cleared, low I/O is not cleared and the internal data is retained. Cycle time is the same as those of RAM read/write cycles, so all bits can be cleared in 1/512 of the usual cycle time. (See figure 1.) EO 8 LP Data Sheet E0165H10 ro du ct HM534253B Series Flash Write Cycle Flash Write Cycle EO RAS CAS Address WE Row DT/OE DSF I/O Color Register Set Cycle Xi Xj Set color register Note: 1. I/O Mask Data Low: Mask High: Non Mask Block Write Cycle (CAS high, DT/OE high and DSF low at the falling edge of RAS, DSF high at the falling edge of CAS ) In a block write cycle, 4 columns of data (4-word × 4-bit) are cleared to 0 or 1 at each I/O according to the data of color register. Column addresses A0 and A1 are disregarded. The data on I/Os and addresses can be masked. I/O level at the falling edge of CAS determines the address to be cleared. (See figure 2.) In a page mode cycle, mixed cycle of normal Read/Write and block write can be allowed by controlling DSF. • Normal Mode Block Write Cycle ( WE high at the falling edge of RAS ) The data on 4 I/Os are all cleared when WE is high at the falling edge of RAS . • Mask Block Write Mode ( WE low at the falling edge of RAS) When WE is low at the falling edge of RAS, the HM534253B starts mask block write mode to clear the data on an optional I/O. The mask data is the same as that of a RAM write cycle. High I/O is cleared, low I/O is not cleared and the internal data is retained. The mask data is available in the RAS cycle. In page mode block write cycle, the mask data is retained during the page access. LP Color Data *1 *1 Execute flash write into each I/O on row address Xi using color resister. Execute flash write into each I/O on row address Xj using color resister. Figure 1 Use of Flash Write Data Sheet E0165H10 9 ro du ct HM534253B Series Color Register Set Cycle Block Write Cycle Block Write Cycle EO RAS CAS Address WE DT/OE DSF I/O 10 Row Row *1 Column A2–A8 Row *1 Column A2–A8 Note: 1. WE Low High I/O Mask Data Low: Mask High: Non Mask Address Mask Data I/O0 I/O1 I/O2 I/O3 Transfer Operation The HM534253B provides the read transfer cycle, split read transfer cycle,pseudo transfer cycle, write transfer cycle, and split write transfer cycle as data transfer cycles. These transfer cycles are set by driving CAS high and DT/OE low at the falling edge of RAS. They have following functions: (1) Transfer data between row address and SAM data register (except for pseudo transfer cycle)  Read transfer cycle and split read transfer cycle: RAM to SAM  Write transfer cycle and split write transfer cycle: SAM to RAM (2) Determine SI/O state (except for split read transfer cycle and split write transfer cycle)  Read transfer cycle: SI/O output  Pseudo transfer cycle and write transfer cycle: SI/O input (3) Determine first SAM address to access after transferring at column address (SAM start address). LP Color Data I/O I/O Mask Data Don't care *1 Address Mask *1 Address Mask Mode Mask Non mask Column0 (A0 = 0, A1 = 0) Mask Data Column1 (A0 = 1, A1 = 0) Mask Data Column2 (A0 = 0, A1 = 1) Mask Data Column3 (A0 = 1, A1 = 1) Mask Data Figure 2 Use of Block Write Data Sheet E0165H10 ro Low: Mask High: Non Mask du ct HM534253B Series EO RAS CAS Address DT/OE DSF SC SI/O SAM start address must be determined by read transfer cycle or pseudo transfer cycle (split transfer cycle isn’t available) before SAM access, after power on, and determined for each transfer cycle. Read Transfer Cycle (CAS high, DT/OE low, WE high and DSF low at the falling edge of RAS ) This cycle becomes read transfer cycle by driving DT/OE low, W E high and DSF low at the falling edge of RAS . The row address data (512 × 4 bits) determined by this cycle is transferred to SAM data register synchronously at the rising edge of DT/OE. After the rising edge of D T/OE, the new address data outputs from SAM start address determined by column address. In read transfer cycle, DT/OE must be risen to transfer data from RAM to SAM. This cycle can access SAM even during transfer (real time read transfer). In this case, the timing tSDD (min) specified between the last SAM access before transfer and DT/OE rising edge and t SDH (min) specified between the first SAM access and DT/OE rising edge must be satisfied. (See figure 3.) When read transfer cycle is executed, SI/O becomes output state by first SAM access. Input must be set high impedance before t SZS (min) of the first SAM access to avoid data contention. Pseudo Transfer Cycle (CAS high, DT/OE low, WE low, SE high and DSF low at the falling edge of RAS) Pseudo transfer cycle switches SI/O to input state and set SAM start address without data transfer to RAM. This cycle starts when CAS is high, D T/OE low, W E low, SE high and DSF low at the falling edge of RAS. Data should be input to SI/O later than t SID (min) after R AS becomes low to avoid data contention. SAM access becomes enabled after t SRD (min) after R AS becomes high. In this cycle, SAM access is inhibited during RAS low, therefore, SC must not be risen. Write Transfer Cycle (CAS high, DT/OE low, WE low, SE low, and DSF low at the falling edge of RAS ) LP Xi L SAM Data before Transfer Figure 3 Real Time Read Transfer Data Sheet E0165H10 11 ro Yj t SDD t SDH du Yj Yj + 1 SAM Data after Transfer ct HM534253B Series EO (Row address) A8 ........ A0 000000000 011111111 100000000 111111111 12 Write transfer cycle can transfer a row of data input by serial write cycle to RAM. The row address of data transferred into RAM is determined by the address at the falling edge of RAS . The column address is specified as the first address for serial write after terminating this cycle. Also in this cycle, SAM access becomes enabled after t SRD (min) after RAS becomes high. SAM access is inhibited during RAS low. In this period, SC must not be risen. Data transferred to SAM by read transfer cycle or split read transfer cycle can be written to other addresses of RAM by write transfer cycle. However, the address to write data must be the same MSB of row address (AX8) as that of the read transfer cycle. Figure 4 shows the example of row bit data transfer. In case AX8 is 0, data cannot be transferred RAM address within the range of 100000000 to 111111111. Same as the case of AX8 = 1. (Read transfer cycle) Split Read Transfer Cycle (CAS high, DT/OE low, WE high and DSF high at the falling edge of RAS ) To execute a continuous serial read by real time read transfer, the HM534253B must satisfy SC and D T/OE timings and requires an external circuit to detect SAM last address. Split read transfer cycle makes it possible to execute a continuous serial read without the above timing limitation. Figure 5 shows the block diagram for a split transfer. SAMdata register (DR) consists of 2 split buffers, whose organizations are 256-word × 4-bit each. Let us suppose that data is read from upper data register DR1 (The row address AX8 is 0 and SAM address A8 is 1.). When split read transfer is executed setting row address AX8 0 and SAM start addresses A0 to A7, 256-word × 4-bit data are transferred from RAM to the lower data register DR0 (SAM address A8 is 0) automatically. After data are read from data register DR1, data start to be read from SAM start addresses of data register DR0. If the next split read transfer isn’t executed while data are read from data register DR0, data start to be read from SAM start address 0 of DR1 after data are read from data register DR0. If split read transfer is executed setting row address AX8 1 and SAM start addresses A0 to A7 while data are read from data register DR1, 256-word × 4-bit data are transferred to data register DR2. After data are read from data register DR1, data start to be read from SAM start addresses of data register DR2. If the next split read transfer isn’t executed while data is read from data register DR2, data start to be read from SAM start address 0 of data register DR3 after data are read from data register DR2. In this time, SAM data is the one transferred to data register DR3 finally while row address AX8 is 1. In split read data transfer, the SAM start address A8 is automatically set in the data register which isn’t used. The data on SAM address A8, which will be accessed next, outputs to QSF. QSF is switched from low to high by accessing SAM last address 255 and from high to low by accessing address 511. LP SAM ........ RAM RAM SAM (Row address) A8 ........A0 000000000 011111111 100000000 111111111 SAM Possible RAM Impossible RAM SAM (Write transfer cycle) Figure 4 Example of Row Bit Data Transfer Data Sheet E0165H10 ro du ct HM534253B Series SAM Column Decoder DR1 SAM I/O Bus AX8 = 0 SAM I/O Bus Memory Array DR3 DR0 SAM I/O Buffer SI/O Figure 5 Block Diagram for Split Transfer DR2 EO Split read transfer cycle is set when CAS is high, D T/OE is low, WE is high and DSF is high at the falling edge of R AS. The cycle can be executed asyncronously with SC. However, tSTS (min) timing specified between SC rising and R AS falling must be satisfied. SAM last address must be accessed, satisfying tRST (min), tCST (min), and tAST (min) timings specified between R AS or CAS falling and column address. (See figure 6.) In split read transfer, SI/O isn't switched to output state. Therefore, read transfer must be executed to switch SI/O to output state when the previous transfer cycle is pseudo transfer or write transfer cycle. LP Memory Array AX8 = 1 Data Sheet E0165H10 13 ro du ct HM534253B Series RAS EO CAS Address DT/OE DSF SC tSTS (min) tRST (min) t CST (min) Xi t AST (min) Yj Split Write Transfer Cycle (CAS high, DT/OE low, WE low and DSF high at the falling edge of RAS) A continuous serial write cannot be executed because accessing SAM is inhibited during RAS low in write transfer. Split write transfer cycle makes it possible. In this cycle, tSTS (min), tRST (min), tCST (min) and tAST (min) timings must be satisfied like split read transfer cycle. And it is impossible to switch SI/O to input state in this cycle. If SI/O is in output state, pseudo transfer cycle should be executed to switch SI/O into input state. Data transferred to SAM by read transfer cycle or split read transfer cycle can be written to other addresses of RAM by split write transfer cycle. However, pseudo transfer cycle must be executed before split write transfer cycle. And the MSB of row address (AX8) to write data must be the same as that of the read transfer cycle or the split read transfer cycle. SAM Port Operation Serial Read Cycle SAM port is in read mode when the previous data transfer cycle is read transfer cycle. Access is synchronized with SC rising, and SAM data is output from SI/O. When SE is set high, SI/O becomes high impedance, and the internal pointer is incremented by the SC rising. After indicating the last address (address 511), the internal pointer indicates address 0 at the next access. LP 511 (255) n (n + 255) 255 (511) 255 + Yj (Yj) Figure 6 Limitation in Split Transfer Data Sheet E0165H10 14 ro du ct HM534253B Series EO Serial Write Cycle If previous data transfer cycle is pseudo transfer cycle or write transfer cycle, SAM port goes into write mode. In this cycle, SI/O data is fetched into data register at the SC rising edge like in the serial read cycle. If SE is high, SI/O data isn’t fetched into data register. Internal pointer is incremented by the SC rising, so SE high can be used as mask data for SAM. After indicating the last address (address 511), the internal pointer indicates address 0 at the next access. Refresh LP RAM Refresh RAM, which is composed of dynamic circuits, requires refresh to retain data. Refresh is executed by accessing all 512 row addresses within 8 ms. There are three refresh cycles: (1) RAS -only refresh cycle, (2) CAS -before-RAS (CBR) refresh cycle, and (3) Hidden refresh cycle. Besides them, the cycles which activate RAS such as read/write cycles or transfer cycles can refresh the row address. Therefore, no refresh cycle is required when all row addresses are accessed within 8 ms. (1) RAS -Only Refresh Cycle: RAS -only refresh cycle is executed by activating only RAS cycle with CAS fixed to high after inputting the row address (= refresh address) from external circuits. To distinguish this cycle from data transfer cycle, DT/OE must be high at the falling edge of RAS . (2) CBR Refresh Cycle: CBR refresh cycle is set by activating CAS before RAS . In this cycle, refresh address need not to be input through external circuits because it is input through an internal refresh counter. In this cycle, output is in high impedance and power dissipation is lowered because CAS circuits don’t operate. (3) Hidden Refresh Cycle: Hidden refresh cycle executes CBR refresh with the data output by reactivating RAS when DT/OE and CAS keep low in normal RAM read cycles. ro Symbol VT VCC Iout PT Topr Tstg du Value –1.0 to +7.0 –0.5 to +7.0 50 1.0 0 to +70 –55 to +125 SAM Refresh SAM parts (data register, shift resister and selector), organized as fully static circuitry, require no refresh. Absolute Maximum Ratings Parameter Voltage on any pin relative to V SS Supply voltage relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature Note: 1. Relative to VSS . Unit V V Note 1 1 ct mA W °C °C 15 Data Sheet E0165H10 HM534253B Series Recommended DC Operating Conditions (Ta = 0 to +70°C) Parameter Symbol VCC VIH VIL Min 4.5 2.4 –0.5 *2 EO Supply voltage Input high voltage Input low voltage Parameter Operating current I CC1 I CC7 Standby current I CC2 I CC8 RAS -only refresh current I CC3 I CC9 Page mode current I CC4 I CC10 CAS -before- I CC5 RAS refresh current I CC11 16 Typ 5.0 — — Max 5.5 6.5 0.8 Unit V V V Notes 1 1 1 Notes: 1. All voltage referred to VSS 2 –3.0 V for pulse width ≤ 10 ns. DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V) HM534253B -6 -7 -8 -10 Symbol Min Max Min Max Min Max Min Max Unit Test Conditions — — 75 — 70 — 60 — 55 95 mA mA RAS , CAS cycling SC = VIL, t RC = min SE = VIH SE = VIL, SC cycling t SCC = min RAS , CAS = VIH SC = VIL, SE = VIH SE = VIL, SC cycling t SCC = min RAS cycling CAS = VIH t RC = min SC = VIL, SE = VIH SE = VIL, SC cycling t SCC = min SC = VIL, SE = VIH SE = VIL, SC cycling t SCC = min SC = VIL, SE = VIH LP 125 — — — 7 50 — — 7 50 — 75 — 70 — 125 — — 80 — 80 — 130 — — 50 — 45 — 100 — 95 120 — 100 — 120 — 130 — Data Sheet E0165H10 ro — — 7 — 40 — — 60 — 100 — — 70 — 110 — — 40 — — 80 — 7 40 mA mA 55 mA du 95 mA 65 mA 105 mA 35 mA 75 mA CAS cycling RAS = VIL t PC = min ct RAS cycling t RC = min SE = VIL, SC cycling t SCC = min HM534253B Series EO Parameter Data transfer current I CC6 I CC12 Input leakage current Output leakage current Output high voltage Output low voltage I LI I LO VOH VOL Parameter Note: DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V) (cont) HM534253B -6 -7 -8 -10 Symbol Min Max Min Max Min Max Min Max Unit Test Conditions — 80 — 75 — 65 — 60 mA RAS , CAS cycling SC = VIL, t RC = min SE = VIH SE = VIL, SC cycling t SCC = min — 130 — 125 — 105 — 100 mA Notes: 1. I CC depends on output load condition when the device is selected. ICC max is specified at the output open condition. 2. Address can be changed once while RAS is low and CAS is high. Capacitance (Ta = 25°C, VCC = 5 V, f = 1 MHz, Bias: Clock, I/O = VCC, address =VSS) Symbol CI1 CI2 CI/O Typ — — — Max 5 5 7 Unit pF pF pF Note 1 1 1 Input capacitance (Address) Input capacitance (Clocks) Output capacitance (I/O, SI/O, QSF) 1. This parameter is sampled and not 100% tested. AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)*1, *16 LP –10 10 –10 10 –10 10 –10 10 2.4 — — 2.4 — — 0.4 0.4 –10 10 –10 10 µA –10 10 –10 10 µA 2.4 — — 0.4 2.4 — — 0.4 V V I OH = –2 mA I OL = 4.2 mA ro du ct Test Conditions • • • • • Input rise and fall time: 5 ns Input pulse levels: VSS to 3.0 V Input timing reference levels: 0.8 V, 2.4 V Output timing reference levels: 0.8 V, 2.0 V Output load: See figures Data Sheet E0165H10 17 HM534253B Series Test Conditions (cont) +5V +5V EO Parameter RAS precharge time RAS pulse width CAS pulse width Refresh period DT to RAS hold time 18 I OH = – 2 mA I OL = 4.2 mA I OH = – 2 mA I OL = 4.2 mA SI / O I/O *1 100 pF *1 50 pF Note: 1. Including scope & jig Common Parameter Random read or write cycle time Row address setup time Row address hold time Column address setup time Column address hold time RAS to CAS delay time RAS hold time referred to CAS CAS hold time referred to RAS CAS to RAS precharge time t CRP Transition time (rise to fall) tT t REF t DTS t DTH t FSR t RFH DT to RAS setup time DSF to RAS setup time DSF to RAS hold time LP Output Load (A) -6 t RC t RP t RAS t CAS t ASR t RAH t ASC t CAH t RCD t RSH t CSH 55 60 20 0 10 0 15 20 20 60 10 3 — 0 10 0 10 8 Output Load (B) HM534253B -7 Min Max 135 — — -8 Min Max 150 — 60 80 20 0 10 0 — 10000 — — — -10 Min Max 180 — 70 — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns 3 2 Symbol Min Max 125 — — Data Sheet E0165H10 ro 55 10000 — 70 20 0 — — — — 10 0 15 20 20 70 10 3 — 0 10 0 10 — — — 40 — — — 50 — — 50 — — — 50 8 — — — — — — — — 10000 100 10000 25 0 10 0 15 20 25 — — — — — 75 — du — 15 — 20 60 20 80 10 3 — 0 10 0 10 — — — 50 8 — — — — 100 — 10 3 — 50 ct — 0 8 — 10 0 — — 10 — ms ns ns ns ns HM534253B Series EO Parameter Parameter Access time from OE Address access time CAS precharge time Common Parameter (cont) HM534253B -6 Symbol Min Max t FSC t CFH t DZC t DZO 0 15 0 0 — — — — 20 20 -7 Min Max 0 15 0 0 — — — — — — 20 20 -8 Min Max 0 15 0 0 — — — — — — 20 20 -10 Min Max 0 15 0 0 — — — — — — 20 20 Unit Notes ns ns ns ns ns ns 4 4 5 5 DSF to CAS setup time DSF to CAS hold time Data-in to CAS delay time Data-in to OE delay time Output buffer turn-off delay referred to CAS Output buffer turn-off delay referred to OE Read Cycle (RAM), Page Mode Read Cycle Access time from RAS Access time from CAS Read command setup time Read command hold time Read command hold time referred to RAS RAS to column address delay time Column address to RAS lead t RAL time Column address to CAS lead t CAL time Page mode cycle time t PC t CP t ACP Access time from CAS precharge Page mode RAS pulse width t RASP LP t OFF1 t OFF2 — — -6 t RAC t CAC t OAC t AA t RCS t RCH t RRH t RAD — — — — 0 0 10 15 35 35 45 10 — 60 HM534253B -7 Min Max 70 20 20 35 -8 Min Max — — — — 0 0 80 20 20 40 — — -10 Min Max — — — — 0 0 10 15 45 45 55 10 — 100 25 25 45 — — — 55 — — — — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns 10 10 2 6, 7 7, 8 7 7, 9 Symbol Min Max 60 20 20 35 — — — 25 — — — — 40 Data Sheet E0165H10 19 ro — — — — 0 0 10 15 35 35 45 10 — — — — 35 — — — — 40 100000 70 du 10 — 15 40 40 40 50 10 — — — — — 45 100000 80 100000 100 100000 ns ct 50 HM534253B Series Write Cycle (RAM), Page Mode Write Cycle, Color Register Set Cycle HM534253B -6 Symbol Min Max t WCS t WCH t WP 0 15 15 20 20 0 — — — — — — -7 Min Max 0 15 15 20 20 0 15 0 10 0 10 20 45 10 20 — — — — — — — — — — — — — — — -8 Min Max 0 15 15 20 20 0 15 0 10 0 10 20 50 10 20 — — — — — — — — — — — — — — — 10000 -10 Min Max 0 15 15 20 20 0 15 0 10 0 10 20 55 10 20 — — — — — — — — — — — — — — — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 13 12 12 11 EO Parameter Data-in setup time Data-in hold time WE to RAS hold time CAS precharge time 20 Write command setup time Write command hold time Write command pulse width Write command to RAS lead t RWL time Write command to CAS lead t CWL time t DS WE to RAS setup time Mask data to RAS setup time t MS Mask data to RAS hold time t MH OE hold time referred to WE t OEH Page mode cycle time t PC t CP t CDD CAS to data-in delay time Page mode RAS pulse width t RASP LP t DH 15 0 t WS t WH 10 0 10 20 45 10 20 60 — — — — — — — — — Data Sheet E0165H10 ro 100000 70 100000 80 100 100000 ns du ct HM534253B Series EO Parameter Access time from OE Address access time Data-in setup time Data-in hold time Read-Modify-Write Cycle HM534253B -6 Symbol Min Max 175 — 110 10000 45 60 20 — — — — — — — 60 20 20 35 -7 Min Max 185 — 120 10000 45 60 20 — — — — 15 0 — — — 70 20 20 35 35 — -8 Min Max 200 — 130 10000 45 65 20 — — — — 15 0 20 20 15 0 15 20 — — — 80 20 20 40 40 — — — — — — — -10 Min Max 230 — 150 10000 50 70 20 — — — — 15 0 20 20 15 0 15 20 — — — 100 25 25 45 55 — — — — — — — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 12 12 14 14 12 6, 7 7, 8 7 7, 9 Read-modify-write cycle time t RWC RAS pulse width (readmodify-write cycle) CAS to WE delay time t RWS t CWD Column address to WE delay t AWD time OE to data-in delay time Access time from RAS Access time from CAS t ODD t RAC t CAC RAS to column address delay time Read command setup time Write command to RAS lead t RWL time Write command to CAS lead t CWL time Write command pulse width t WP t DS t DH OE hold time referred to WE t OEH LP t OAC t AA t RAD t RCS 15 0 20 20 15 0 15 20 -6 t CSR 10 10 10 25 — ro — — — 20 20 15 0 — — — — — — — 15 20 — — -7 Min Max 10 10 10 — — — — — — du -8 Min Max — — — 10 10 10 Refresh Cycle HM534253B -10 Min Max — — — Unit Notes Parameter CAS setup time ( CAS before- RAS refresh) Symbol Min Max ct 10 10 10 ns ns ns CAS hold time (CAS-before- t CHR RAS refresh) RAS precharge to CAS hold t RPC time Data Sheet E0165H10 21 HM534253B Series Flash Write Cycle, Block Write Cycle HM534253B -6 Symbol Min Max t CDD t ODD 20 20 — — -7 Min Max 20 20 — — -8 Min Max 20 20 — — -10 Min Max 20 20 — — Unit Notes ns ns 13 13 EO Parameter Parameter DT precharge time 22 CAS to data-in delay time OE to data-in delay time Read Transfer Cycle DT hold time referred to RAS t RDH DT hold time referred to CAS t CDH DT hold time referred to column address t ADH DT to RAS delay time SC to RAS setup time 1st SC to RAS hold time 1st SC to CAS hold time 1st SC to column address hold time Last SC to DT delay time Last SC to DT delay time 1st SC to DT hold time RAS to QSF delay time CAS to QSF delay time DT to QSF delay time QSF hold time referred to RAS QSF hold time referred to CAS QSF hold time referred to DT t DQH Serial data-in to 1st SC delay t SZS time Serial clock cycle time t SCC LP -6 50 20 25 20 65 25 60 25 40 5 25 10 — — — 20 5 5 0 25 t DTP t DRD t SRS t SRH t SCH t SAH t SDD t SDD2 t SDH t RQD t CQD t DQD t RQH t CQH HM534253B -7 Min Max 60 20 25 20 65 25 70 25 40 5 25 10 — — — 20 5 5 0 25 10000 — — — — — — — — -8 Min Max 65 20 30 20 70 30 80 25 45 5 10000 — — — — — — — — — -10 Min Max 80 25 30 30 80 30 10000 — — — — — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 15 15 15 19 Symbol Min Max 10000 — — — — — — — — Data Sheet E0165H10 ro — — — 65 35 35 — — — — — — — — 70 35 35 — — — — — 100 — 25 50 5 25 15 — — — 25 5 5 0 — — — — — 85 40 35 — — — — du 25 15 — — — — — 75 40 35 20 5 5 0 30 — — — — — ct 30 — ns HM534253B Series EO Parameter SC pulse width SC precharge time SC access time Read Transfer Cycle (cont) HM534253B -6 Symbol Min Max t SC t SCP t SCA t SOH t SIS 5 10 — 5 0 — — 20 — — -7 Min Max 5 10 — 5 0 15 15 35 10 — — 22 — — — 35 — — -8 Min Max 10 10 — 5 0 15 15 40 10 — — 25 — — — 40 — — -10 Min Max 10 10 — 5 0 15 15 45 10 — — 25 — — — 55 — — Unit Notes ns ns ns ns ns ns ns ns ns 18 15 Serial data-out hold time Serial data-in setup time Serial data-in hold time RAS to column address delay time Column address to RAS lead t RAL time RAS precharge to DT high hold time LP t SIH 15 15 35 10 t RAD t DTHH — 25 — — Data Sheet E0165H10 23 ro du ct HM534253B Series Pseudo Transfer Cycle, Write Transfer Cycle HM534253B -6 Symbol Min Max t ES 0 10 25 20 10 40 — — — — — — 40 — 65 35 -7 Min Max 0 10 25 20 10 40 — — 20 5 — — — — 40 — 70 35 — — -8 Min Max 0 10 30 25 10 45 — — 20 5 30 10 10 — — — — — — 45 — 75 40 — — — — — 25 25 -10 Min Max 0 10 30 25 10 50 — — 25 5 30 10 10 — — 5 5 0 15 — — — — 50 — 85 40 — — — — — 25 25 — — — — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 15 15 15 15 EO Parameter SC pulse width SC precharge time SC access time SE access time 24 SE setup time referred to RAS SE hold time referred to RAS t EH SC setup time referred to RAS RAS to SC delay time t SRS Serial output buffer turn-off time referred to RAS RAS to serial data-in delay time RAS to QSF delay time CAS to QSF delay time QSF hold time referred to RAS QSF hold time referred to CAS Serial clock cycle time Serial data-out hold time Serial write enable setup time Serial data-in setup time Serial data-in hold time LP t SRD t SRZ t SID t RQD t CQD t RQH t CQH t SCC t SC t SCP t SCA t SEA t SOH t SWS t SIS t SIH 20 5 25 5 10 — — 5 5 0 15 — — Data Sheet E0165H10 ro — 25 5 — — — — 10 — — — 20 20 — — — — 22 22 5 5 0 15 — — — — du 5 5 0 — — — 15 — ct HM534253B Series EO Parameter SC pulse width SC precharge time SC access time Split Read Transfer Cycle, Split Write Transfer Cycle HM534253B -6 Symbol Min Max t STS t RST t CST 20 60 20 35 — 5 — — — — 30 — -7 Min Max 20 70 20 35 — 5 25 5 10 — 5 0 — — — — 30 — — — — 22 — — -8 Min Max 20 80 20 40 — 5 30 10 10 — 5 0 15 15 40 — — — — 30 — — — — 25 — — — 40 — -10 Min Max 25 — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 15 15 Split transfer setup time Split transfer hold time referred to RAS Split transfer hold time referred to CAS 100 — 25 45 — 5 30 10 10 — 5 0 15 15 45 — — 30 — — — — 25 — — — 55 — Split transfer hold time referred to column address SC to QSF delay time QSF hold time referred to SC t SQH Serial clock cycle time t SCC Serial data-out hold time Serial data-in setup time Serial data-in hold time RAS to column address delay time Column address to RAS lead t RAL time LP t AST t SQD 25 5 t SC t SCP t SCA 10 — 5 0 15 15 35 t SOH t SIS t SIH t RAD — — — 20 — — Data Sheet E0165H10 25 ro — 15 — 25 — 15 35 35 — du ct HM534253B Series Serial Read Cycle, Serial Write Cycle HM534253B -6 Symbol Min Max t SCC t SC t SCP t SCA 25 5 10 — — 5 — — — 20 20 — 20 — -7 Min Max 25 5 10 — — 5 — 0 15 5 15 5 — — — 22 22 — 20 — — — — — -8 Min Max 30 10 10 — — 5 — 0 15 5 15 5 15 — — — 25 25 — 20 — — — — — — -10 Min Max 30 10 10 — — 5 — 0 15 5 15 5 15 — — — 25 25 — 20 — — — — — — Unit Notes ns ns ns ns ns ns ns ns ns ns ns ns ns 5 15 15 EO Parameter SC pulse width SC precharge width Access time from SC Access time from SE 26 Serial clock cycle time Serial data-out hold time Serial output buffer turn-off time referred to SE Serial data-in setup time Serial data-in hold time Serial write enable setup time Serial write enable hold time t SWH Serial write disable setup time Serial write disable hold time t SWIH Notes: 1. AC measurements assume t T = 5 ns. 2. When t RCD > tRCD (max) and tRAD > tRAD (max), access time is specified by tCAC or tAA. 3. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition time tT is measured between VIH and VIL. 4. Data input must be floating before output buffer is turned on. In read cycle, read-modify-write cycle and delayed write cycle, either tDZC (min) or tDZO (min) must be satisfied. 5. t OFF1 (max), tOFF2 (max), and tSEZ (max) are defined as the time at which the output achieves the open circuit condition (V OH – 100 mV, VOL + 100 mV). 6. Assume that tRCD ≤ tRCD (max) and tRAD ≤ tRAD (max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, t RAC exceeds the value shown. 7. Measured with a load circuit equivalent to 2 TTL loads and 100 pF. 8. When t RCD ≥ tRCD (max) and tRAD ≤ tRAD (max), access time is specified by tCAC . 9. When t RCD ≤ tRCD (max) and tRAD ≥ tRAD (max), access time is specified by tAA . 10. If either tRCH or tRRH is satisfied, operation is guaranteed. 11. When t WCS ≥ tWCS (min), the cycle is an early write cycle, and I/O pins remain in an open circuit (high impedance) condition. 12. These parameters are specified by the later falling edge of CAS or WE. 13. Either t CDD (min) or tODD (min) must be satisfied because output buffer must be turned off by CAS or OE prior to applying data to the device when output buffer is on. 14. When t AWD ≥ tAWD (min) and tCWD ≥ tCWD (min) in read-modify-write cycle, the data of the selected address outputs to an I/O pin and input data is written into the selected address. t ODD (min) must be satisfied because output buffer must be turned off by OE prior to applying data to the device. 15. Measured with a load circuit equivalent to 2 TTL loads and 50 pF. LP t SEA t SOH t SEZ t SIS — 0 t SIH 15 5 t SWS 15 5 t SWIS 15 — — — — Data Sheet E0165H10 ro — 15 — du ct HM534253B Series EO Read Cycle RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF 16. After power-up, pause for 100 µs or more and execute at least 8 initialization cycle (normal memory cycle or refresh cycle), then start operation. 17. When the serial write cycle is used, at least one SC pulse is required before proper SAM operation after V CC stabilized. 18. t DTHH (min) must be satisfied only if DT/ OE rises up before RAS rises in a read transfer cycle. 19. After read transfer cycle, if split read transfer cycle is executed without SC access and SC address is 254 or 510, t SDD2 (min) must be satisfied 25 ns. Except for those cases, tSDD (min) is effective and satisfied 5 ns. 20. XXX: H or L (H: V IH (min) ≤ V IN ≤ V IH (max), L: VIL (min) ≤ V IN ≤ V IL (max)) ///////: Invalid Dout Timing Waveforms*20 LP t RCD t RAD t ASR Row t RAH t ASC t DZC t DZO t DTS t FSR t DTH t RFH t FSC t RC t RAS t CSH t RSH t CAS t CAL t RP t CRP Column t RCS Data Sheet E0165H10 27 ro t RAL t CAH t CAC t AA t RAC t OAC t CFH t RRH t RCH t CDD t OFF1 du Valid Dout t OFF2 ct HM534253B Series Early Write Cycle EO RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF t RC t RAS t CSH t RCD t ASR t RAH t RSH t CAS t CAH t RP t CRP t ASC Row t WS t WH *1 Column t WCH Note: 1. This cycle becomes a normal mode write cycle when WE is high and a mask write cycle when WE is low. Delayed Write Cycle LP t WCS t MS t MH t DS Mask Data t DTS t DTH t FSR t RFH t FSC t RCD t ASR t RAH Row t WS t WH *1 t ASC t MS t MH t DZC Mask Data t DTH t DTS t FSR t RFH t FSC High-Z t DH Valid Din t CFH ro t RC t RAS t CSH t RSH t CAS t CAH Columun t RWL t WP t CWL t DS t OFF2 t ODD t CFH t DH Valid Din t OEH t RP t CRP RAS du ct CAS Address WE I/O (Output) I/O (Input) DT/OE DSF Note: 1. This cycle becomes a normal mode write cycle when WE is high and a mask write cycle when WE is low. Data Sheet E0165H10 28 HM534253B Series EO RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF Read-Modify-Write Cycle t RWC t RWS t RCD t RAD t ASR t RAH t ASC t CAH t AWD t CWD t CAC t AA Valid Dout t OAC t OFF2 t ODD t RWL t CWL t WP t RP t CRP Row Column t RCS Note: 1. This cycle becomes a normal mode write cycle when WE is high and a mask write cycle when WE is low. Page Mode Read Cycle LP t WS t WH *1 t MS t MH t DZC Mask Data t DZO t DTS t DTH t FSR t RFH t FSC t CSH t RCD t CAS t RAD t ASR t RAH t ASC Row t CAL t CAH Column t RCS t RCH Valid Dout t RAC t DS t DH Valid Din t OEH t CFH ro t RC t RASP t PC t CP t CAS t CAL t CAH t ASC Column t RCS t AA t ACP t CAC t DZC t OAC t RCH t FSC t CFH t RP t RSH t CAS RAS t CP t CRP du t RAL t ASC t CAL t CAH Column t RCS t OFF1 t AA t ACP t CAC Valid Dout CAS Address t RRH t RCH WE t RAC t OFF1 t AA t CAC t DZC t CDD t OAC t OFF2 t OFF1 I/O (Output) Valid Dout t CDD t OFF2 t DZC ct t CDD t OAC I/O (Input) t DTS DT/OE t FSR DSF t DZO t DTH t RFH t FSC t CFH t FSC t CFH Data Sheet E0165H10 29 HM534253B Series Page Mode Write Cycle (Early Write) t RC t RASP t CSH t RCD t ASR t RAH t ASC t CAS t CP t PC t CAS t RSH t CAS t CAH Column t WCS t WCH t RP EO RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF t CP t CRP t CAH t ASC Column t CAH t ASC Row Column t WS t WH t WCS t WCH *1 t DTS Note: 1. This cycle becomes a normal mode write cycle when WE is high and a mask write cycle when WE is low. Page Mode Write Cycle (Delayed Write) LP t MS t MH t DS t DH Mask Data t WCS t WCH High-Z t DS t DH Valid Din t DS t DH Valid Din Valid Din t DTH t FSR t RFH t FSC t CFH t FSC t CFH t FSC t CFH ro t RC t RASP t PC t CP t CAS t ASC Column t CAH t CWL t WP t DS t DH Valid Din t RP RAS t CSH t RCD CAS Address t ASR t RAH t ASC Row t WS WE I/O (Output) I/O (Input) t DTS DT/OE t FSR DSF t RFH t FSC t CFH t MS *1 t MH Mask Data t CP t CAS t CAH t CWL t RSH t CAS t CAH t CRP du t ASC Column t RWL t WP t DS t DH Valid Din Column t WP t WH t CWL t DS t DH Valid Din t OEH ct t FSC t CFH t FSC t CFH Note: 1. This cycle becomes a normal mode write cycle when WE is high and a mask write cycle when WE is low. Data Sheet E0165H10 30 HM534253B Series EO RAS CAS Address I/O (Output) I/O (Input) DT/OE DSF RAS CAS Address WE I/O (Output) DT/OE DSF RAS-Only Refresh Cycle t RC t RAS t CRP t ASR t RAH t RPC t RP Row t OFF1 CAS-Before-RAS Refresh Cycle LP t CDD t OFF2 t ODD t DTS t DTH t FSR t RFH ro t CHR High-Z t RC t RAS t RPC Inhibit Falling Transition t RP t CSR t RP t RPC t CP t CSR du ct 31 t OFF1 Data Sheet E0165H10 HM534253B Series Hidden Refresh Cycle t RC t RAS t RCD t RP t RSH t RAS t RC t RP t CRP EO RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF t CHR t ASR Row t RAD t RAL t RAH t ASC t CAH Column t RCS Color Register Set Cycle (Early Write) LP t CAC t AA t RAC t DZC t DTS t DZO t DTH t FSR t RFH t FSC t CFH t RCD t ASR Row t WS t WH t WCS t RAH t DS t DTS t FSR t DTH t RFH t RRH t OFF1 Valid Dout t OFF2 t OAC Color Data Data Sheet E0165H10 32 ro t RC t RAS t CSH t RP t CRP du t RSH t CAS High-Z t WCH t DH ct HM534253B Series EO RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF Color Register Set Cycle (Delayed Write) t RC t RAS t RP t CSH t RCD t ASR t RAH t RSH t CAS t CRP Color Register Read Cycle LP Row t WS t DTS t FSR t RFH t CSH t RCD t ASR t RAH Row t WS t WH t RCS t CAC t RAC t DZC t DZO t DTS t FSR t RFH t DTH t RWL t CWL t WP High-Z t DS t DH Color Data t OEH Data Sheet E0165H10 33 ro t RC t RAS t OAC t RP t CRP t RSH t CAS du t RRH Valid Out t OFF2 t RCH t CDD t OFF1 t ODD ct HM534253B Series Flash Write Cycle EO RAS CAS Address WE I/O (Output) I/O (Input) DT/OE DSF t RC t RAS t CRP t ASR Row t WS t WH t RCD t RAH t RP t OFF1 t OFF2 LP t CDD t ODD t MS t DTS t FSR t CSH t RCD t CAS t ASC Column A2-A8 High-Z t MH Mask Data t DTH t RFH Block Write Cycle ro t RASP t PC t CP t CAS t ASC Column A2-A8 t RC t RP RAS t CP t RSH t CAS t ASC t CAH t CRP CAS t ASR t RAH Address t WS WE I/O (Output) I/O (Input) t DTS DT/OE t FSR DSF t RFH t FSC t CFH *1 Row t WH t CAH du Column A2-A8 t CAH High-Z t MS I/O Mask t MH t DS Address Mask t DH t DS Address Mask t DH t DS t DH Address Mask ct t DTH t FSC t CFH t FSC t CFH Note: 1. This cycle becomes a normal block write cycle when WE is high and a mask block write cycle when WE is low. Data Sheet E0165H10 34 HM534253B Series EO RAS CAS Address t WS WE I/O (Output) I/O (Input) t MS t DTS DT/OE DSF Page Mode Block Write Cycle t RC t RASP t CSH t RCD t CAS t CP t PC t CAS t CAH t RP t CP t RSH t CAS t ASC Column A2-A8 t CRP t ASR t RAH Row t ASC Column A2-A8 t CAH t ASC Column A2-A8 t CAH t FSR Note: 1. This cycle becomes a normal block write cycle when WE is high and a mask block write cycle when WE is low. LP t WH *1 t MH t DS t DH I/O Mask Address Mask High-Z t DS Address Mask t DH t DS Address Mask t DH t DTH t RFH t FSC t CFH t FSC t CFH t FSC t CFH Data Sheet E0165H10 35 ro du ct HM534253B Series Read Transfer Cycle (1) t RC t RAS t CSH t RCD t RSH t CAS t RAL t ASC t CAH SAM Start Address EO RAS CAS Address WE I/O (Output) DT/OE DSF SC SI/O (Output) SI/O (Input) QSF *1 t RP t CRP t ASR t RAD t RAH Valid Sout LP Row t WS t WH t DTS t FSR t RFH t SCC t SCA t SOH t SCA t SOH Valid Sout SAM Address MSB t RQD t RQH SAM Address MSB High-Z t CDH t ADH t RDH t DTP t DRD t DTHH t SCC t SDD t SDD2* 3 t SCC t SDH t SC t SCA t SOH Valid Sout t SCC t SCP t CQH ro t SCA t SOH Valid Sout t SOH Valid Sout New Row Previous Row t DQD t DQH t CQD du QSF *2 Notes: 1. This QSF timing is referred when SC is risen once or more between the previous transfer cycle and CAS falling edge of this cycle (QSF is switched by DT rising). 2. This QSF timing is referred when SC isn't risen between the previous transfer cycle and CAS falling edge of this cycle (QSF is switched by RAS or CAS falling). 3. After read transfer cycle, if split read transfer cycle is executed without SC access and SC address is 254 or 510, t SDD2 (min) must be satisfied 25 ns. Except for those cases, tSDD (min) is effective and satisfied 5 ns. ct Data Sheet E0165H10 36 HM534253B Series EO RAS CAS Address WE I/O (Output) DT/OE DSF SC SI/O (Output) SI/O (Input) t SIS QSF Read Transfer Cycle (2) t RC t RAS t RP t CSH t RCD t RAD t RAH t RSH t CAS t RAL t ASC t CAH t CRP Valid Sin LP t ASR Row t WS t WH t DTS t DTH t FSR t RFH t SRS t SC t SIH SAM Address MSB Sam Start Address t DTHH High-Z t DRD t DTP t SDH t SCP t SC t SCC t SCP t SCA Inhibit Rising Transition Data Sheet E0165H10 37 ro t SCH t SAH t SRH t CQD t CQH t RQD t RQH t SCA t SOH t SZS Valid Sout t DQD du t DQH ct HM534253B Series Pseudo Transfer Cycle t RC t RAS t RP EO RAS CAS Address WE I/O (Output) DT/OE DSF SE SC t SCA t CSH t RCD t RSH t CAS t RAH t ASC t CAH t CRP t ASR t SRS t SC t SOH LP Row SAM Start Address t WS t WH t DTS t DTH t FSR t RFH t ES t SEZ t EH t SRZ Valid Sout High - Z Inhibit Rising Transition ro t CQD t SWS t SRD t SCP t SCC t SC t SCP SI/O (Output) SI/O (Input) Valid Sout t SID du t SIS t SIH t SIS t SIH Valid Sin Valid Sin t RQD t RQH t CQH QSF SAM Address MSB ct Data Sheet E0165H10 38 HM534253B Series EO RAS CAS Address WE I/O (Output) DT/OE DSF SE SC SI/O (Output) SI/O (Input) t SIS Write Transfer Cycle t RC t RAS t RP t RCD t CSH t RSH t CAS t CRP t ASR t RAH t ASC t CAH t ES t SWS t SC Valid Sin t CQD t RQD t RQH t CQH LP Row SAM Start Address t WS t WH t DTS t DTH t FSR t RFH t EH t SRS t SIH High-Z t SWS Inhibit Rising Transition ro t SRD t SCP t SC t SCC t SCP t SIS t SIH t SIS t SIH du Valid Sin Valid Sin QSF SAM Address MSB ct Data Sheet E0165H10 39 HM534253B Series Split Read Transfer Cycle t RC t RAS t CSH t CRP t RCD t RSH t CAS t RAD t ASR t RAH t ASC t CAH t RAL SAM Start Address Yi t CRP t RP EO RAS CAS Address WE I/O (Output) DT/OE DSF Low SE SC SI/O (Output) SI/O (Input) Valid Sout 511 (255) t SCA t SOH t SQH LP Row t WS t WH t OFF1 t DTS t DTH t FSR t RFH t STS n (n+255) t SC t SOH Valid Sout Valid Sout t SQD High-Z t SCC n+1 (n+256) t SCA ro t SCP n+2 (n+257) Valid Sout t CST t AST t RST 253 (509) 254 (510) 255 (511) Yi+255 (Yi) du Valid Sout Valid Sout t SQD t SQH QSF SAM Address MSB ct Data Sheet E0165H10 40 HM534253B Series EO RAS CAS Address WE I/O (Output) DT/OE DSF Low SE SC SI/O (Output) SI/O (Input) Valid Sin Split Write Transfer Cycle t RC t RAS t CSH t RCD t RSH t CAS t RAL t ASC t CAH SAM Start Address Yi t RP t ASR t RAH 511 (255) t SQH LP Row t WS t WH t OFF1 t DTS t DTH t FSR t RFH t STS n (n+255) t SC n+1 (n+256) t SIS t SIH Valid Sin Valid Sin t SQD High-Z t SCC ro t SCP n+2 (n+257) t SIS t SIH Valid Sin t CST t AST t RST n+3 (n+258) 254 (510) 255 (511) Yi+255 (Yi) du Valid Sin t SIS t SIH Valid Sin t SQD t SQH Valid Sin QSF SAM Address MSB ct Data Sheet E0165H10 41 HM534253B Series Serial Read Cycle EO SE tSCC SC SI/O (Output) tSCC tSC tSCA tSOH tSCP tSC tSCP tSC tSEA tSCA tSCP tSCC tSC tSEZ Valid Sout tSCA tSOH Valid Sout Valid Sout Valid Sout LP tSWH tSWIS tSCC tSC tSCP tSIS tSIH Valid Sin Serial Write Cycle tSWIH tSWS SE tSCC tSC tSCP tSIS tSIH tSCC tSC tSCP tSIS tSC SC SI/O (Input) tSIH Valid Sin Valid Sin Data Sheet E0165H10 42 ro du ct HM534253B Series 10.16 ± 0.13 0.74 3.50 ± 0.26 1 14 11.18 ± 0.13 1.30 Max 0.25 0.80 + 0.17 – 0.43 ± 0.10 0.41 ± 0.08 1.27 9.40 ± 0.25 Hitachi Code JEDEC EIAJ Weight (reference value) CP-28D Conforms Conforms 1.16 g 0.10 Dimension including the plating thickness Base material dimension Data Sheet E0165H10 43 0.21 2.40 + 0.24 – EO Package Dimensions HM534253BJ Series (CP-28D) Unit: mm 18.17 18.54 Max 28 15 LP ro du ct HM534253B Series HM534253BZ Series (ZP-28) Unit: mm 10.16 Max 8.71 1 0.25 M 28 1.045 Max 2.85 0.50 – 0.12 + 0.08 1.27 2.80 Min EO 44 35.58 36.57 Max LP 0.10 0.25 + 0.05 – 2.54 Data Sheet E0165H10 ro Hitachi Code JEDEC EIAJ Weight (reference value) ZP-28 — Conforms 1.95 g du ct HM534253B Series EO Cautions 1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, contact Elpida Memory, Inc. before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc. particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury, fire or other consequential damage due to operation of the Elpida Memory, Inc. product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Elpida Memory, Inc.. 7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc. semiconductor products. LP Data Sheet E0165H10 45 ro du ct