EM39LV088-90H

EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION General Description The EM39LV088 is an 8M bits Flash memory organized as 1M x 8 bits. The EM39LV088 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV088 provides a typical Byte-Program time of 14 µsec and a typical Sector/Block-Erase time of 18 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM39LV088 conforms to JEDEC standard pin outs for x16 memories. The EM39LV088 is offered in package types of 48-pin TSOP, and known good dice (KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information). The EM39LV088 devices are developed for applications that require memories with convenient and economical updating of program, data or configuration, e.g., DVD player, DVD R/W, WLAN, Router, Set-Top Box, etc. Features Single Power Supply Full voltage range from 2.7 to 3.6 volts for both read and write operations Sector-Erase Capability Uniform 4Kbyte sectors Block-Erase Capability Uniform 64Kbyte blocks Read Access Time Access time: 70 and 90 ns Power Consumption Active current: 15 mA (Typical) Standby current: 2 µA (Typical) Erase/Program Features Sector-Erase Time: 18 ms (Typical) Block-Erase Time: 18 ms (Typical) Chip-Erase Time: 45 ms (Typical) Byte-Program Time: 14µs (Typical) Chip Rewrite Time: 15 seconds (Typical) Automatic Write Timing Internal VPP Generation End-of-Program or End-of-Erase Detection Data# Polling Toggle Bit CMOS I/O Compatibility JEDEC Standard Pin-out and software command sets compatible with single-power supply Flash memory High Reliability Endurance cycles: 100K (Typical) Data retention: 10 years Package Option 48-pin TSOP This specification is subject to change without further notice. (04.09.2004 V1.0) Page 1 of 22 EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION Functional Block Diagram Flash M em ory Array X -Decoder Mem ory Address Address Buffer & Latches Y-Decoder CE# OE# W E# Control Logic I/O Buffers and Data Latches DQ7-DQ0 Figure 0a: Functional Block Diagram Pin Assignments TSOP A16 A15 A14 A13 A12 A11 A10 A9 NC NC W E# NC NC NC NC A19 A18 A8 A7 A6 A5 A4 A3 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A17 NC V SS A0 DQ7 NC DQ6 NC DQ5 NC DQ4 V DD NC DQ3 NC DQ2 NC DQ1 NC DQ0 OE# V SS CE# A1 S tandard TSOP Figure 0b: TSOP Pin Assignments This specification is subject to change without further notice. (04.09.2004 V1.0) Page 2 of 22 EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION Pin Description Pin Name A0–A19 DQ7–DQ0 CE# OE# WE# VDD VSS NC 20 addresses Data inputs/outputs Chip enable Output enable Write enable 2.7-3.6 volt single power supply Device ground Pin not connected internally Function Table 1: Pin Description Device Operation The EM39LV088 uses Commands to initiate the memory operation functions. The Commands are written to the device by asserting WE# Low while keeping CE# Low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Read The Read operation of the EM39LV088 is controlled by CE# and OE#. Both have to be Low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read Cycle Timing Diagram in Figure 1 for further details. Byte Program The EM39LV088 is programmed on a byte-by-byte basis. Before programming, the sector where the byte is located; must be erased completely. The Program operation is accomplished in three steps: The first step is a three-byte load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last; and the data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed within 20 µs. See Figures 2 and 3 for WE# and CE# controlled Program operation timing diagrams respectively and Figure 12 for flowchart. This specification is subject to change without further notice. (04.09.2004 V1.0) Page 3 of 22 EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any command issued during the internal Program operation is ignored. EM39LV088 Device Operation Operation Read Program Erase Standby Write Inhibit Write Inhibit Software Mode Product Identification CE# VIL VIL VIL VIH X X VIL OE# VIL VIH VIH X VIL X VIL WE# VIH VIL VIL X X VIH VIH DQ DOUT DIN X * Address AIN AIN Sector or Block address, XXH for Chip-Erase X X X See Table 3 High Z High Z/DOUT High Z/DOUT * X can be VIL or VIH, but no other value. Table 2: EM39LV088 Device Operation Write Command/Command Sequence The EM39LV088 provides two software methods to detect the completion of a Program or Erase cycle in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the internal Program or Erase operation. The actual completion of the write operation is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent such spurious rejection, when an erroneous result occurs, the software routine should include an additional two times loop to read the accessed location. If both reads are valid, then the device has completed the write cycle, otherwise the rejection is valid. Chip Erase The EM39LV088 provides Chip-Erase feature, which allows the entire memory array to be erased to logic “1” state. The Chip-Erase operation is initiated by executing a six-byte command sequence with Chip-Erase command (10H) at address AAAH in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid reads are Toggle Bit and Data# Polling. See Table 3 for the command sequence, Figure 6 for timing diagram, and Figure 15 for the flowchart. Any commands issued during the Chip-Erase operation are ignored. This specification is subject to change without further notice. (04.09.2004 V1.0) Page 4 of 22 EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION Sector/Block Erase The EM39LV088 offers both Sector-Erase and Block-Erase modes. The Sector- (or Block-) Erase operation allows the system to erase the device on a sector-by-sector (or block-by-block) basis. The sector architecture is based on uniform sector size of 4 KByte. The Block architecture is based on uniform block size of 64 KByte. The Sector-Erase operation is initiated by executing a six-byte command sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined by using either Data# Polling or Toggle Bit method. See Figures 7 and 8 for timing waveforms. Any commands issued during the Sector or Block Erase operation are ignored. Data# Polling (DQ7) When the EM39LV088 is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce the true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Program operation, the remaining data outputs may still be invalid (valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 µs). During internal Erase operation, any attempt to read DQ7 will produce a “0”. Once the internal Erase operation is completed, DQ7 will produce a “1”. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-Erase, Block-Erase, or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 4 for Data# Polling timing diagram and Figure 13 for a flowchart. Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 1s and 0s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the DQ6 bit will stop toggling. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-Erase, Block-Erase or Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 5 for Toggle Bit timing diagram and Figure 13 for a flowchart. Data Protection The EM39LV088 provides both hardware and software features to protect the data from inadvertent write. This specification is subject to change without further notice. (04.09.2004 V1.0) Page 5 of 22 EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION Hardware Data Protection Noise/Glitch Protection: VDD Power Up/Down Detection: Write Inhibit Mode: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. The Write operation is inhibited when VDD is less than 1.5V. Forcing OE# Low, CE# High, or WE# High will inhibit the Write operation. This prevents inadvertent write during power-up or power-down. Software Data Protection (SDP) The EM39LV088 provides the JEDEC approved Software Data Protection (SDP) scheme for Program and Erase operations. Any Program operation requires the inclusion of the three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, especially during the system power-up or power-down transition. Any Erase operation requires the inclusion of six-byte sequence. See Table 3 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to Read mode within TRC. The contents of DQ7-DQ0 can be VIL or VIH, but no other value, during any SDP command sequence. This specification is subject to change without further notice. (04.09.2004 V1.0) Page 6 of 22 EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION Software Command Sequence Command Sequence Byte Program Sector Erase Block Erase Chip Erase Software ID 5,6 Entry Manufacture ID Manufacture ID Manufacture ID Device ID Software ID Exit Software ID Exit 7 7 1st Bus Write Cycle Addr 1 2nd Bus Write Cycle Addr 1 3rd Bus Write Cycle Addr 1 4th Bus Write Cycle Addr WA 1 5th Bus Write Cycle Addr 1 6th Bus Write Cycle Addr 1 Data 2 Data 2 Data 2 Data 2 Data 2 Data 2 AAAH AAAH AAAH AAAH AAAH AAAH AAAH AAAH AAAH XXH AAAH AAH AAH AAH AAH AAH AAH AAH AAH AAH F0H AAH 555H 555H 555H 555H 555H 555H 555H 555H 555H 55H 55H 55H 55H 55H 55H 55H 55H 55H AAAH AAAH AAAH AAAH AAAH AAAH AAAH AAAH AAAH A0H 80H 80H 80H 90H 90H 90H 90H 90H 3 Data AAH AAH AAH 555H 555H 555H 55H 55H 55H SAX4 BAX 4 AAAH AAAH AAAH 30H 50H 10H AAAH 00H 07H 80H 01H 7FH 7FH 01FH 21FH 555H 55H AAAH F0H Notes: 1. Address format A14-A0 (Hex), Addresses A19-A15 can be VIL or VIH, but no other value, for the Command sequence. 2. DQ7-DQ0 can be VIL or VIH, but no other value, for the Command sequence. 3. WA = Program byte address. 4. SAX for Sector-Erase; uses A19-A12 address lines. BAX for Block-Erase; uses A18-A16 address lines. 5. The device does not remain in Software Product ID mode if powered down. 6. Both Software ID Exit operations are equivalent. 7. Refer to Figure 9 for more information. Table 3: Software Command Sequence This specification is subject to change without further notice. (04.09.2004 V1.0) Page 7 of 22 EM39LV088 8M Bits (1Mx8) Flash Memory SPECIFICATION Absolute Maximum Ratings NOTE Applied conditions greater than those listed under these ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this specification, are not implied. Exposure to absolute maximum stress rating conditions may affect device reliability. Temperature Under Bias ............................................................ –55°C to 125°C Storage Temperature .................................................................. –65°C to 150°C D.C. Voltage on Any Pin to Ground Potential ............................. –0.5 V to VDD+0.5V Transient Voltage (