EM621FR8AT-12S

EM620FU8B Document Title 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM Low Power, 256Kx8 SRAM Revision History Revision No. 0.0 0.1 History Initial Draft 0.1 Revision Fix typo error Draft Date Oct. 31, 2007 Nov. 16, 2007 Remark 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Emerging Memory & Logic Solutions Inc. Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM620FU8B 256K x8 Bit Low Power and Low Voltage CMOS Static RAM FEATURES - Process Technology : 0.15µm Full CMOS - Organization :256K x8 - Power Supply Voltage => EM620FU8B : 2.7~3.3V - Low Data Retention Voltage : 1.5V - Three state output and TTL Compatible - Packaged product designed for 45/55/70ns GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um +/-15um - Typical top-level metallization : => Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms - Topside Passivation : => Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms - Wafer diameter : 8 inch 1 Low Power, 256Kx8 SRAM 56 29 EM620FU8B (Dual C/S) + (0.0) EMLSI LOGO 28 y PAD DESCRIPTIONS Name CS1,CS2 OE WE A0~A17 I/O0~I/O7 Function Chip select inputs Output Enable input Write Enable input Address Inputs Data Inputs/Outputs Name Vcc Vss NC Function Power Supply x Pre-charge Circuit Row Select Ground No Connection A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 VCC VSS Memory Array 1024 x 2048 I/O0 ~ I/O7 Data Cont I/O Circuit Column Select A10 A11 A12 A13 A14 A15 A16 A17 WE OE CS1 CS2 Control Logic BONDING INSTRUCTIONS The 2M full CMOS SRAM die has total 56pads. Refer to the bond pad location and identification table for X, Y coordinates. EMLSI recommends using a bond wire on back side of die onto Vss bond pad for improved noise immunity. 2 EM620FU8B ABSOLUTE MAXIMUM RATINGS * Parameter Voltage on Any Pin Relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Operating Temperature Low Power, 256Kx8 SRAM Symbol VIN, VOUT VCC PD TA Minimum -0.2 to 4.0V -0.2 to 4.0V 1.0 -40 to 85 Unit V V W o C * Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper- ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. FUNCTIONAL DESCRIPTION CS1 H X L L L CS2 X L H H H OE X X H L X WE X X H H L I/O0-7 High-Z High-Z High-Z Data Out Data In Mode Deselected Deselected Output Disabled Read Write Power Stand by Stand by Active Active Active Note: X means don’t care. (Must be low or high state) 3 EM620FU8B RECOMMENDED DC OPERATING CONDITIONS 1) Parameter Supply voltage Ground Input high voltage Input low voltage 1. 2. 3. 4. Low Power, 256Kx8 SRAM Symbol VCC VSS VIH VIL Min 2.7 0 2.0 -0.23) Typ 3.0 0 - Max 3.3 0 VCC + 0.22) 0.6 Unit V V V V TA= -40 to 85oC, otherwise specified Overshoot: VCC +2.0 V in case of pulse width < 20ns Undershoot: -2.0 V in case of pulse width < 20ns Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE1) (f =1MHz, TA=25oC) Item Input capacitance Input/Ouput capacitance 1. Capacitance is sampled, not 100% tested. Symbol CIN CIO Test Condition VIN=0V VIO=0V Min - Max 8 10 Unit pF pF DC AND OPERATING CHARACTERISTICS Parameter Input leakage current Output leakage current Operating power supply Symbol ILI ILO ICC ICC1 Average operating current ICC2 VOL VOH ISB VIN=VSS to VCC CS1=VIH or CS2=VIL or OE=VIH or WE=VIL VIO=VSS to VCC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL Cycle time=1µs, 100% duty, IIO=0mA, CS1VCC-0.2V, VINVCC-0.2V Cycle time = Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA CS1=VIH, CS2=VIL, Other inputs=VIH or VIL CS1>VCC-0.2V, CS2>VCC-0.2V (CS controlled) or 0V