merging Memory & Logic Solutions Inc.
Document Title
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM640FU16E Series
Low Power, 256Kx16 SRAM
Revision History
Revision No.
0.0 0.1 0.2
History
Initial Draft 2’nd Draft 3’rd Draft Changed Icc, Icc1 value & 55ns product tDW value tLZ1, tLZ2 value is changed from 5ns to 10ns tBW value ischanged from 60ns to 55ns ( 70ns product ) tWP value is changed from 55ns to 50ns ( 70ns product ) tWP value is changed from 45ns to 40ns ( 55ns product ) VDR & IDR measurement condition change Changed ISB1 test conditions
Draft Date
August 5 , 2002 November 11 , 2002 March 13 , 2003
Remark
0.3
4’th Draft
Add Pb-free part number
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160 Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1
merging Memory & Logic Solutions Inc.
FEATURES
• • • • • • Process Technology : 0.18µ m Full CMOS Organization : 256K x 16 bit Power Supply Voltage : 2.7V ~ 3.3V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA 6.0x7.0
EM640FU16E Series
Low Power, 256Kx16 SRAM
GENERAL DESCRIPTION
The EM640FU16E families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family EM640FU16E Operating Temperature Industrial (-40 ~ 85 oC) Vcc Range Speed Standby (ISB1 , Typ.) 1 µA Operating (ICC1.Max.) 2 mA PKG Type
2.7V~3.3V
551 )/70ns
48-FPBGA
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
1 A B C D E F G H 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
LB I/O 9
OE UB
A0 A3 A5 A17 DNU A14 A12 A9
A1 A4 A6 A7 A16 A15 A13 A10
A2 CS1 I/O2 I/O4 I/O5 I/O6 WE A11
CS2 I/O1 I/O3 VCC V SS I/O7 I/O8 DNU
A A12 A A A15 A A 11 13 14 16 17
R ow S elec t
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
VC C VSS
Memory Array 2048 x 2048
I/O10 I/O11 V SS VC C I/O12 I/O13
I/O1 ~ I/O8 I/O9 ~ I/O16
Data Cont Data Cont
I/O Circuit Column Select
I/O15 I/O14 I/O16 DNU DNU A8
48-FPBGA : Top view (ball down)
W E O E UB LB
Control Logic
N ame CS1 ,CS 2 OE WE A 0 ~A17
Function Chip select inputs O utput Enable input W rite Enable input A ddress Inputs
Name Vcc Vss UB LB DNU
Function Power Supply Ground Upper Byte (I/O 9~16) Lower Byte (I/O 1~8 ) Do Not Use
CS 1 CS 2
I/O1 ~I/O 16 D ata Inputs/outputs
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merging Memory & Logic Solutions Inc.
ABSOLUTE MAXIMUM RATINGS * Parameter
Voltage on Any Pin Relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Operating Temperature
EM640FU16E Series
Low Power, 256Kx16 SRAM
Symbol
VIN , VOUT VCC PD TA
Ratings
-0.2 to Vcc+0.3 (Max. 4.0V) -0.2 to 4.0V 1.0 -40 to 85
Unit
V V W
oC
* Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS1 H X X L L L L L L L L CS 2 X L X H H H H H H H H OE X X X H H L L L X X X WE X X X H H H H H L L L LB X X H L X L H L L H L UB X X H X L H L L H L L I/O 1-8 High-Z High-Z High-Z High-Z High-Z Data Out High-Z Data Out Data In High-Z Data In I/O9-16 High-Z High-Z High-Z High-Z High-Z High-Z Data Out Data Out High-Z Data In Data In Mode Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write Power Stand by Stand by Stand by Active Active Active Active Active Active Active Active
Note: X means don’t care. (Must be low or high state)
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merging Memory & Logic Solutions Inc.
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter Supply voltage Ground Input high voltage Input low voltage
1. 2. 3. 4.
EM640FU16E Series
Low Power, 256Kx16 SRAM
Symbol VCC VSS VIH VIL
Min 2.7 0 2.2 -0.2 3)
Typ 3.0 0 -
Max 3.3 0 VCC + 0 .22) 0.6
Unit V V V V
TA= -40 to 85oC, otherwise specified Overshoot: V CC +2.0 V in case of pulse width < 20ns Undershoot: -2.0 V in case of pulse width < 20ns Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE 1) (f =1MHz, TA=25oC)
Item Input capacitance Input/Ouput capacitance
1. Capacitance is sampled, not 100% tested
Symbol C IN CIO
Test Condition VIN=0V VIO =0V
Min -
Max 8 10
Unit pF pF
DC AND OPERATING CHARACTERISTICS
Parameter Input leakage current Output leakage current Operating power supply Symbol ILI ILO ICC ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current (TTL) VOL VOH IS B
V I N=V SS to V CC C S 1=V I H o r CS 2 = VIL o r O E=VIH or W E=VIL o r LB = UB=V IH V IO =V SS t o V CC IIO =0mA, CS 1 =VIL , CS 2 =WE =VI H, VIN=V IH o r V IL C ycle time=1 µs, 100% duty, I IO=0mA, CS 1 V C C-0.2V (CS 1 controlled) or 0V V cc-0.2V
CS1 GND Vcc 2.7V CS 2 tSDR
Data Retention Mode
tRDR
VDR 0.4V
CS 2 < 0 .2V
GND
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merging Memory & Logic Solutions Inc.
EM640FU16E Series
Low Power, 256Kx16 SRAM
Unit: millimeters
PACKAGE DIMENSION
48 Ball Fine Pitch BGA (0.75mm ball pitch) Top View
B
Bottom View
A1 index Mark
B B1 6 A B C 5 4 3 21
0.5 0.5 Y C1 C B/2
#A1
C
D E C1/2 F G H
Side View
0.26 E2 D
0. 25 T yp.
Detail A
A
E E1
Min A B B1 C C1 D E E1 E2 Y 5.93 6.93 0.30 1.00 -
Typ 0.75 6.00 3.75 7.00 5.25 0.35 1.04 0.79 0.25 -
Max 6.03 7.03 0.40 1.10 0.08
NOTES. 1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75x0.75) (typ.) 3. All tolerence are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max)
10
0. 79 T yp.
C
merging Memory & Logic Solutions Inc.
MEMORY FUNCTION GUIDE
EM640FU16E Series
Low Power, 256Kx16 SRAM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory 2. Device Type 3. Density 4. Option 5. Technology 6. Operating Voltage
1. Memory Component 2. Device Type 6 ------------------------ Low Power SRAM 7 ------------------------ STRAM 3. Density 1 ------------------------- 1M 2 ------------------------- 2M 4 ------------------------- 4M 8 ------------------------- 8M 16 ----------------------- 16M 32 ----------------------- 32M 64 ----------------------- 64M 4. Option 0 ----------------------- Dual CS 1 ----------------------- Single CS 5. Technology Blank ------------------ CMOS F ------------------------ Full CMOS 6. Operating Voltage Blank ------------------- 5V V ------------------------- 3.3V U ------------------------- 3.0V S ------------------------- 2.5V R ------------------------- 2.0V P ------------------------- 1.8V 7. Organization 8 ---------------------- x8 bit 16 ---------------------- x16 bit 32 ---------------------- x32 bit 11
11. Power 10. Speed
9. Packages 8. Version 7. Organization
8. Version Blank ----------------- Mother Die A ----------------------- First revision B ----------------------- Second revision C ----------------------- Third revision D ----------------------- Fourth revision 9. Package Blank ---------------------- Package W --------------------- Wafer 10. Speed 45 ---------------------- 45ns 55 ---------------------- 55ns 70 ---------------------- 70ns 85 ---------------------- 85ns 10 --------------------- 100ns 12 --------------------- 120ns 11. Power LL ---------------------L ---------------------S ---------------------LF ----------------------
Low Low Power Low Power Standard Power Low Low Power (Pb-free)
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