EM4170

EM MICROELECTRONIC - MARIN SA EM4170 125kHz CRYPTO READ/WRITE Contactless Identification Device Description The EM4170 is a CMOS integrated circuit intended for use in electronic Read/Write RF Transponders. The chip contains an implementation of a crypto-algorithm with 96 Bits of user configurable secret-key contained in EEPROM. It also provides a unique Device Identification of 32 bits that can never be modified as well as 94 bits of freely programmable USER-MEMORY. Bits 15 and 14 of word 1 are used as Lock-Bits. The memory can only be accessed for writing or erasing if these two bits have the contents "x0" as when they are delivered. The memory can be unlocked by using the PIN-code command. In that case, the lock-bits are reset from the value "x1" to the value "x0". The EM4170 transmits data to the transceiver by modulating the amplitude of the electromagnetic field, and receives data and commands in a similar way. The coil of the tuned circuit is the only external component required, all remaining functions are integrated in the chip. Features • • • • • • • • • • • • • • • On Chip Crypto-Algorithm Two Way Authentication 96 bits of Secret-Key in EEPROM (unreadable) 32 bits of fix Device Identification 32 bits of PIN code (unreadable) 94 bits of USER_MEMORY (UM) with read access (OTP) Secret-Key programmable via CID-Interface Lock-Bits to inhibit programming Data Transmission performed by Amplitude Modulation Bit Period = 32 periods of carrier frequency 200pF on chip Resonant Capacitor (untrimmed) -40 to +85°C Temperature range 100 kHz to 150 kHz Field Frequency On chip Rectifier and Voltage Limiter No external supply buffer capacitance needed due to low power consumption Typical Applications • • Anti-counterfeiting High security hands-free access control Typical Operating Configuration COIL1 L COIL2 EM4170 Typical value for inductance L is 8mH at fO = 125 KHz Fig. 1 Copyright  2002, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com EM4170 System Principle Tranceiver Data to be sent to transponder Modulator Transponder Coil1 Oscillator Antenna Driver EM4170 Coil2 Filter and Gain Demodulator Data decoder Data received from transponder RECEIVE MODE Signal on Transceiver coil Signal on Transceiver coil READ MODE Signal on Transponder coil RF Carrier Signal on Transponder coil Data RF Carrier Data Fig. 2 Block Diagram Modulator Encoder Serial Data VPOS_REG Coil1 Cr Coil2 GND RESET PWR VDD AC/DC converter Cs Power Control Clock Extractor Data Extractor Sequencer Control Logic EEPROM CryptoAlgorithm Command Decoder Fig. 3 Copyright  2002, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com EM4170 Absolute Maximun Ratings Parameter Symbol Supply Voltage VPOS-REG (Unregulated) Min. -0.3 Max. 9.5 Units V Operating Conditions Parameter Symbol Min. Operating TOP -40 Temperature Typ. +25 Max. Units +85 °C Supply Voltage (regulated) Voltage at remaining pins Excepted COIL1, COIL2 Storage temperature Electrostatic discharge (Mil-STD-883 C method 3015) Maximum Current induced on COIL1 and COIL2 VDD VPIN Tstore VESD -0.3 5.5 V V °C V Maximum coil current Frequency on Coil inputs ICOIL FCOIL -10 100 125 +10 150 mA kHz VSS - 0.3 VDD + 0.3 -55 1000 + 125 ICOIL -30 + 30 mA Handling Procedure Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified electrical characteristics may affect device reliability Electrical parameters and functionality are not guaranteed when the circuit is exposed to light. This device has built-in protection against high static voltages or electric fields; however, anti-static precautions should be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply voltage range. Electrical Characteristics VDD = VPOS_REG = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise specified. Parameter Supply Voltage(unregulated) Supply Voltage (regulated) EEPROM read voltage Symbol VPOS-REG VDD VRD Conditions VPOS_REG = max (note 1) Read Mode (note 2) Min. Typ. Max. 1) 4.2 Units V V V 2.8 2.0 2.5 3.5 EEPROM write voltage Supply current / read Supply current /write @25°C Supply current / write Modulator voltage drop VEE Ird Iwr25 Iwr VON Read Mode VDD =2.0V Write Mode, VDD =2.5V Write Mode, VDD =2.6V -40°C