EM MICROELECTRONIC - MARIN SA
EM4170
125kHz CRYPTO READ/WRITE Contactless Identification Device
Description The EM4170 is a CMOS integrated circuit intended for use in electronic Read/Write RF Transponders. The chip contains an implementation of a crypto-algorithm with 96 Bits of user configurable secret-key contained in EEPROM. It also provides a unique Device Identification of 32 bits that can never be modified as well as 94 bits of freely programmable USER-MEMORY. Bits 15 and 14 of word 1 are used as Lock-Bits. The memory can only be accessed for writing or erasing if these two bits have the contents "x0" as when they are delivered. The memory can be unlocked by using the PIN-code command. In that case, the lock-bits are reset from the value "x1" to the value "x0". The EM4170 transmits data to the transceiver by modulating the amplitude of the electromagnetic field, and receives data and commands in a similar way. The coil of the tuned circuit is the only external component required, all remaining functions are integrated in the chip. Features • • • • • • • • • • • • • • • On Chip Crypto-Algorithm Two Way Authentication 96 bits of Secret-Key in EEPROM (unreadable) 32 bits of fix Device Identification 32 bits of PIN code (unreadable) 94 bits of USER_MEMORY (UM) with read access (OTP) Secret-Key programmable via CID-Interface Lock-Bits to inhibit programming Data Transmission performed by Amplitude Modulation Bit Period = 32 periods of carrier frequency 200pF on chip Resonant Capacitor (untrimmed) -40 to +85°C Temperature range 100 kHz to 150 kHz Field Frequency On chip Rectifier and Voltage Limiter No external supply buffer capacitance needed due to low power consumption
Typical Applications • • Anti-counterfeiting High security hands-free access control
Typical Operating Configuration
COIL1
L
COIL2
EM4170
Typical value for inductance L is 8mH at fO = 125 KHz
Fig. 1
Copyright 2002, EM Microelectronic-Marin SA
1
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EM4170
System Principle
Tranceiver
Data to be sent to transponder
Modulator
Transponder Coil1
Oscillator
Antenna Driver
EM4170 Coil2
Filter and Gain
Demodulator
Data decoder
Data received from transponder
RECEIVE MODE Signal on Transceiver coil Signal on Transceiver coil
READ MODE
Signal on Transponder coil RF Carrier
Signal on Transponder coil
Data
RF Carrier
Data
Fig. 2
Block Diagram
Modulator
Encoder
Serial Data
VPOS_REG Coil1 Cr Coil2 GND RESET PWR
VDD
AC/DC converter
Cs
Power Control
Clock Extractor Data Extractor
Sequencer
Control Logic EEPROM CryptoAlgorithm
Command Decoder
Fig. 3
Copyright 2002, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
EM4170
Absolute Maximun Ratings Parameter Symbol Supply Voltage VPOS-REG (Unregulated) Min. -0.3 Max. 9.5 Units V Operating Conditions Parameter Symbol Min. Operating TOP -40 Temperature Typ. +25 Max. Units +85 °C
Supply Voltage (regulated) Voltage at remaining pins Excepted COIL1, COIL2 Storage temperature Electrostatic discharge (Mil-STD-883 C method 3015) Maximum Current induced on COIL1 and COIL2
VDD VPIN Tstore VESD
-0.3
5.5
V V °C V
Maximum coil current Frequency on Coil inputs
ICOIL FCOIL
-10 100 125
+10 150
mA kHz
VSS - 0.3 VDD + 0.3 -55 1000 + 125
ICOIL
-30
+ 30
mA
Handling Procedure Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified electrical characteristics may affect device reliability Electrical parameters and functionality are not guaranteed when the circuit is exposed to light.
This device has built-in protection against high static voltages or electric fields; however, anti-static precautions should be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply voltage range.
Electrical Characteristics VDD = VPOS_REG = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise specified. Parameter Supply Voltage(unregulated) Supply Voltage (regulated) EEPROM read voltage Symbol VPOS-REG VDD VRD Conditions VPOS_REG = max (note 1) Read Mode (note 2) Min. Typ. Max. 1) 4.2 Units V V V
2.8 2.0 2.5
3.5
EEPROM write voltage Supply current / read Supply current /write @25°C Supply current / write Modulator voltage drop
VEE Ird Iwr25 Iwr VON Read Mode VDD =2.0V Write Mode, VDD =2.5V Write Mode, VDD =2.6V -40°C
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