EM4350A5WP21

R EM MICROELECTRONIC - MARIN SA EM4150 EM4350 1 KBit READ / WRITE CONTACTLESS IDENTIFICATION DEVICE Description The EM4150/EM4350 (previously named P4150/P4350) is a CMOS integrated circuit intended for use in electronic Read/Write RF Transponders. The chip contains 1 KBit of EEPROM which can be configured by the user, allowing a write inhibited area, a read protected area, and a read area output continuously at power on. The memory can be secured by using the 32 bit password for all write and read protected operations. The password can be updated, but never read. The fixed code serial number and device identification are laser programmed making every chip unique. The EM4150 will transmit data to the transceiver by modulating the amplitude of the electromagnetic field, and receive data and commands in a similar way. Simple commands will enable write to EEPROM, to update the password, to read a specific memory area, and to reset the logic. The coil of the tuned circuit is the only external component required, all remaining functions are integrated in the chip. The only difference between EM4150 and EM4350 is that EM4150 comes with standard sized pads, whereas EM4350 comes with oversized (mega) pads, ideal for use with bumps on die (Fig. 27). Features □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ 1 KBit of EEPROM organized in 32 words of 32 bits 32 bit Device Serial Number (Read Only Laser ROM) 32 bit Device Identification (Read Only Laser ROM) Power-On Reset sequence Power Check for EEPROM write operation User defined Read Memory Area at Power On User defined Write Inhibited Memory Area User defined Read Protected Memory Area Data Transmission performed by Amplitude Modulation Two Data Rate Options 2 KBd (Opt64) or 4 KBd (Opt32) Bit Period = 64 or 32 periods of field frequency 170 pF ± 2% on chip Resonant Capacitor -40 to +85°C Temperature range 100 to 150 kHz Field Frequency range On chip Rectifier and Voltage Limiter No external supply buffer capacitance needed due to low power consumption Ticketing Automotive Immobilizer with rolling code High Security Hands Free Access Control Industrial automation with portable database Manufacturing automation Prepayment Devices Applications □ □ □ □ □ □ Typical Operating Configuration Pin Assignment Coil 2 L COIL2 COIL2 EM 4150 Coil 1 COIL1 COIL1 EM41 50 COIL 1 COIL 2 Typical value of inductance at 125 KHz is 9.5 mH Fig. 1 Coil terminal / Clock input Coil terminal Fig. 2 Copyright © 2004, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com R EM4150 EM4350 Absolute Maximum Ratings Parameter Maximum AC peak current induced on COIL1 and COIL2 Power Supply Maximum voltage other pads Minimum voltage other pads Storage temperature Electrostatic discharge maximum to MIL-STD-883C method 3015 Symbol ICOIL VDD Vmax Vmin Tstore VESD Conditions ± 30 mA -0.3 to 6.0V VDD + 0.3V VSS – 0.3V -55 to °125°C 1000V Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions should be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the supply voltage range. Operating Conditions Parameter Operating temperature Maximum coil current AC Voltage on coil Supply frequency Symbol Top ICOIL Vcoil fcoil 100 1) 150 Min -40 Typ Max +85 10 Units °C mA Vpp kHz Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Note 1): Maximum voltage is defined by forcing 10mA on Coil1Coil2 Tranceiver Data to be sent to transponder Modulator Transponder Coil1 Oscillator Antenna Driver EM4150 Coil2 Filter and Gain Demodulator Data decoder Data received from transponder READ MODE Signal on Transponder coil RECEIVE MODE Signal on Transceiver coil Signal on Transceiver coil Signal on Transponder coil RF Carrier Data RF Carrier Data Fig. 3 Copyright © 2004, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com R EM4150 EM4350 Electrical Characteristics VDD = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise stated Parameter Symbol Test Conditions Min Supply voltage VDD 2.0 2.6 VDDee Minimum EEPROM write voltage Power Check EEPROM write IPWcheck VDD = 3V Supply current / read Suppy current / write Modulator ON voltage drop Resonance Capacitor Power On Reset level high Clock extractor input min. Clock extractor input max. EEPROM data endurance EEPROM retention Ird Iwr VON Cr Vprh Vclkmin Vclkmax Ncy Tret Read Mode Write mode (VDD = 3V) V(COIL1–Vss) and V(COIL2-Vss) Icoil = 100µA V(COIL1–Vss) and V(COIL2-Vss) Icoil = 5mA 166.5 Rising Supply Minimum voltage for Clock Extraction Maximum voltage to detect modulation stop Erase all / Write all at VDD = 5V Top = 55°C after 100'000 cycles (Note 1) 1.0 50 100'000 10 170 2.0 Typ Max 5.5 Units V V µA µA µA V V pF V Vpp mVpp cycles years 80 3.0 40 5.0 70 0.50 2.50 173.5 2.6 Note 1: Based on 1000 hours at 150°C Timing Characteristics VDD = 2.5V, VSS = 0V, fcoil = 125 kHz Sine wave, Vcoil = 1Vpp, Top = 25°C unless otherwise stated All timings are derived from the field frequency and are specified as a number of RF periods. Parameters Option : 64 clocks per bit Read Bit Period LIW/ACK/NACK pattern Duration Read 1 Word Duration Processing Pause Time Write Access Time Initialization Time EEPROM write time Option : 32 clocks per bit Read Bit Period LIW/ACK/NACK pattern Duration Read 1 Word Duration Processing Pause Time Write Access Time Initialization Time EEPROM write time Symbol Opt64 trdb tpatt trdw tpp twa tinit twee Opt32 trdb tpatt trdw tpp twa tinit twee 32 160 1600 32 32 1056 2624 RF periods RF periods RF periods RF periods RF periods RF periods RF periods 64 320 3200 64 64 2112 3200 RF periods RF periods RF periods RF periods RF periods RF periods RF periods Test conditions Value Units including LIW VDD = 3 V including LIW VDD = 3 V RF periods represent periods of the carrier frequency emitted by the transciever unit. For example, if 125 kHz is used : The Read bit period (Opt64) would be : 1/125'000*64 = 512 µs, and the time to read 1 word : 1/125'000*3200 = 25.6 ms. The Read bit period (Opt32) would be : 1/125'000*32 = 256 µs, and the time to read 1 word : 1/125'000*1600 = 12.8 ms. ATTENTION Due to amplitude modulation of the coil-signal, the clock-extractor may miss clocks or add spurious clocks close to the edges of the RF-envelope. This desynchronisation will not be larger than ±3 clocks per bit and must be taken into account when developing reader software. Copyright © 2004, EM Microelectronic-Marin SA 3 www.emmicroelectronic.com R EM4150 EM4350 Block Diagram Serial Data Modulator Encoder ROM +V Coil 2 Cr Voltage Regulation EEPROM VDD Coil 1 AC/DC converte r GND Cs Power Control Reset Write Enable Clock Extractor Sequencer Control Logic Data Extractor Command Decoder Fig. 4 Functional Description General The EM4150 is supplied by means of an electromagnetic field induced on the attached coil. The AC voltage is rectified in order to provide a DC internal supply voltage. When the DC voltage crosses the Power-On level, the chip enters the Standard Read Mode and sends data continuously. The data to be sent in this mode is user defined by storing the first and last addresses to be output. When the last address is sent, the chip will continue with the first address until the transceiver sends a request. In the read mode, a Listen Window (LIW) is generated before each word. During this time, the EM4150 will turn to the Receive Mode (RM) if it receives a valid RM pattern. The chip then expects a valid command. Mode of Operation Power-On Init Standard Read Mode 31 32 33 Memory Organisation The 1024 bit EEPROM is organised in 32 words of 32 bits. The first three words are assigned to the Password, the Protection word, and the Control word. In order to write one of these three words, it is necessary to send the valid password. At fabrication, the EM4150 comes with all bits of the password programmed to a logic "0". The Password cannot be read out. The memory contains two extra words of Laser ROM. These words are laser programmed during fabrication for every chip, are unique and cannot be altered. Memory Map Bit 0 Word 0 1 2 PASSWORD PROTECTION WORD CONTROL WORD 928 Bits of USER EEPROM DEVICE SERIAL NUMBER DEVICE IDENTIFICATION Laser Laser Bit 31 EE EE EE EE Get Command No Receive Mode request ? Yes Execute Command Login Write Word Write Password Selective Read Reset Control Word 0 - 7 First Word Read 8 - 15 Last Word Read 16 Password Check On/Off 17 Read After Write On/Off 18 - 31 User available Protection Word 0 - 7 First Word Read Protected 8 - 15 Last Word Read Protected 16 - 23 First Word Write Inhibited 24 - 31 Last Word Write Inhibited Password Write Only - NO Read Access Device Identification Word & Serial Number Word Laser Programmed - Read Only Send word On means bit set to logic '1' Off means bit set to logic '0' Fig. 6 Fig. 5 Copyright © 2004, EM Microelectronic-Marin SA 4 www.emmicroelectronic.com R EM4150 EM4350 Standard Read Mode After a Power-On Reset and upon completion of a command, the chip will execute the Standard Read Mode, in which it will send data continuously, word by word from the memory section defined between the First Word Read (FWR) and Last Word Read (LWR). When the last word is output, the chip will continue with the first word until the transceiver sends a request. If FWR and LWR are the same, the same word will be sent repetitively. The Listen Window (LIW) is generated before each word to check if the transceiver is sending data. The LIW has a duration of 320 (160 opt 32) periods of the RF field. FWR and LWR have to be programmed as valid addresses (FWR ≤ LWR and ≤ 33). The words sent by the EM4150 comprise 32 data bits and parity bits. The parity bits are not stored in the EEPROM, but generated while the message is sent as described below. The parity is even for rows and columns, meaning that the total number of "1's" is even (including the parity bit). Receive Mode To activate the Receive Mode, the Transceiver sends to the chip the RM pattern (while in the modulated phase of a Listen Window LIW). The EM4150 will stop sending data upon reception of a valid RM. The chip then expects a command. The RM pattern consists of 2 bits "0" sent by the transceiver. The first bit "0" transmitted is to be detected during the 64 (32 opt 32) periods where the modulation is "ON" in LIW. OUTPUT WORD n LIW INPUT RM COMMAND RM : Two Consecutive bits set to logic "0" Fig. 9 Commands The commands are composed of nine bits : eight data bits and one even parity bit (total amount of "ones" is even including the parity bit). COMMAND BITS 00000001 1 00010001 0 00010010 0 FUNCTION LOGIN WRITE PASSWORD WRITE WORD SELECTIVE READ MODE RESET Word Organisation (Words 0 to 32) First bit output Data Row Even Parity D0 D8 D16 D24 PC0 D1 D9 D17 D25 PC1 D2 D10 D18 D26 PC2 D3 D11 D19 D27 PC3 D4 D12 D20 D28 PC4 D5 D13 D21 D29 PC5 D6 D14 D22 D30 PC6 D7 D15 D23 D31 PC7 P0 P1 P2 P3 0 Column Even Parity Last bit output logic "0" Fig. 7a 00001010 0 10000000 1 When a word is read protected, the output will consist of 45 bits set to logic "0". The password has to be used to output correctly a read protected memory area. Word Organisation (Word 33) C0 ID2 R0 CK0 PC0 C1 C2 ID3 ID4 R1 R2 CK1 CK2 PC1 PC2 C3 C4 ID5 ID6 R3 R4 CK3 CK4 PC3 PC4 C5 ID0 ID7 ID8 R5 R6 CK5 CK6 PC5 PC6 ID1 ID9 R7 CK7 PC7 P0 P1 P2 P3 0 First bit Received Parity bit Fig. 10 C0 - C5 : P4150 Code set to Hexadecimal 32 ID0 - ID9 : Version Code R0 - R7 / CK0 - CK7 : EM reserved, and Check bits Selective Read Mode The Selective Read Mode is used to read other data than that defined between FWR and LWR. To enter Selective Read Mode, the Transceiver has to send during LIW a Receive mode pattern (RM) to turn the EM4150 in Receive Mode. Then the Selective Read Mode Command is sent by the transceiver followed by the First and Last addresses to be read. The FWR and LWR are then replaced by the new addresses and the chip is operating in the same way as the Standard Read Mode. The control word is not modified by this command, and the next standard read mode operation will work with original FWR and LWR (Selected area is read once and then the chip returns to Standard Read Mode). To read words which are Read Protected, a Login command has to be sent by the transceiver prior to the Selective Read command. The Login command is to be used only once for all subsequent commands requiring a password. Fig. 7b Read Sequence POR INIT OUTPUT LIW LIW FWR LIW FWR+1 LWR LIW LIW FWR LI W LIW D0-D7 P0 D8-D15 P1 D16-D23 P2 D24-D31 P3 PC0-PC7 "0" T0 periods : 32 32 128 16 16 64 1 bit - 64 T0 periods (Opt64) 32 T0 periods (Opt32) 64 32 64 32 (Opt64) (Opt32) Data Coded Data T0 = Period of RF carrier frequency Fig. 8 Copyright © 2004, EM Microelectronic-Marin SA 5 www.emmicroelectronic.com R EM4150 EM4350 Selective Read Mode cont. The Selective Read mode command is followed by a single 32-bit word containing the new first and last addresses. Bits 0 to 7 correspond to the First Word Read and bits 8 to 15 correspond to the Last Word Read. Bits 16 to 31 have to be sent but are not used in the chip. The parities must be sent according to the word organisation as described in fig.7. Note that bit 31 is transmitted first. To read the device Identification or the Serial Number, the Selective Read Command allows direct access to the Laser programmed words. These words can also be addressed in the standard read mode by selecting the addresses accordingly. OUTPUT WORD n LIW ACK/NAK LIW LIW FWR LIW INPUT RM Selective RD ADDRESSES t pp Fig. 11 First bit received Addresses Bit Stream Form at XX XX XX XX XX XX XX XX P3 X X XX XX XX XX XX XX XX P2 LW 7 LW 6 LW 5 LW 4 LW 3 LW 2 LW 1 LW 0 P1 FW 7 FW 6 F W 5 FW 4 FW 3 FW 2 F W 1 FW 0 P0 PC7 PC6 PC5 PC4 PC3 PC2 PC1 PC0 "0" Fig. 12 Reset Command The Reset Command will return from any mode to the Standard Read Mode. The next word out is the FWR. OUTPUT WORD n LIW ACK/NAK LIW LIW FWR LIW INPUT RM RESET t pp t init Fig. 13 Login The Login command is used to access protected memory areas. This command has to be used only once to perform several password protected commands. The Power-On sequence and the Reset command will reset the password entry, and a new Login command has to be received to perform further password protected operations. Upon reception of a correct password, the EM4150 will respond with an acknowledge pattern (ACK) and then continue in Standard Read Mode. If the Login is correct then password protected operations are allowed. If the password is incorrect, a NAK pattern is issued and password protected operations will not be possible (refer to Write Word for password data structure). OUTPUT WORD n LIW ACK/NAK LIW LIW FWR LIW INPUT RM LOGIN PASSWORD t pp Fig. 14 If bit 16 of the control word is disabled (Password Check ON/OFF), the Login is still mandatory to modify the Protection Word, the Control Word, and the Password, but not to write in the EEPROM which is not write inhibited. In order to modify a write inhibited word, the Protection word has to be modified first. The Read protected area always requires the Login to be read. If the Write Protection Word is write protected, the write protection configuration is locked. Copyright © 2004, EM Microelectronic-Marin SA 6 www.emmicroelectronic.com R EM4150 EM4350 Write Password When a Write Password command is received, the chip next expects information on the actual valid password. The chip sends back an ACK pattern if the password is correct. Then the chip expects the new password consisting of 32 bits + parity bit to be stored in the EEPROM. The chip will respond with an ACK pattern for a correct reception of data upon reception of the new password, and then will send another acknowledge pattern (ACK) to announce that the data is stored in the EEPROM. The Read after Write function has no effect on this command. If the password is wrong or the transmission is faulty, the chip will : send a NAK pattern; return to the Standard Read Mode; and, the password will remain the same. (Refer to Write Word for password data structure). t pp t wa t wee OUTPUT WORD n LIW ACK LIW ACK ACK LIW LIW FWR INPUT RM WRITE PW ACTUAL PW RM NEW PW TRANSCEIVER RF FIELD "ON" Fig. 15 Write Word The Write mode allows modification of the EEPROM contents word by word. To modify address 1 (Protection word) and address 2 (Control word), it is mandatory to first send a Login command in order to Log in (like in a computer). The new written values will take effect only after performing a Reset command. It is strongly recommended to check the result of modifying the contents of these addresses effecting the function of the chip. Address 0 (Password) cannot be modified with this command but can be changed with the Write Password command. Addresses 3 to 31 are programmable according to the defined protections. If the Password Check bit is off (bit 16 of control word) and the word is not write inhibited, the selected word can be freely modified without password. If the Password Check bit is on and the word is not write inhibited, the selected word can be modified with a previous Login. In any case, if the word is write inhibited, the protection word has to be changed before programming can occur. Write to Address 0 1–2 1–2 3 – 31 3 – 31 3 – 31 Check Password bit (16 bit / Control word) X X X OFF ON X Write Inhibit (Protection word) X OFF ON OFF OFF ON Write Operation Only with Write Password command Login always required Write configuration LOCKED Freely programmable Login required Change protection word first Address 0 0 A5 A4 A3 A2 A1 A0 Padd First bit received Data D31 D30 D29 D28 D27 D26 D25 D24 P3 D23 D22 D21 D20 D19 D18 D17 D16 P2 D15 D14 D13 D12 .......................... D02 D01 D00 P0 PC7 PC6 PC5 PC4 PC3 PC2 PC1 PC0 "0" Note : A5 in write mode always "0" (addresses Laser ROM) Fig. 16 The Write Word command is followed by the address and data. The address consists of a 9 bit block containing 8 data bits and 1 even parity bit. Only 6 bits from the data section are used for the word addressing, and the first three bits sent must be "0". The data consists of 4 times 9 bit blocks, each block consisting of 8 data bits and 1 associated even parity bit and one additional block consisting of 8 column parity bits and "0" as stop bit (Refer to fig. 7) Copyright © 2004, EM Microelectronic-Marin SA 7 www.emmicroelectronic.com R EM4150 EM4350 Write Word (cont.) After reception of the command, the address, and the data, the EM4150 will check the parity, the write protection status, the Login status, and also if the available power from the RF field is sufficient. If all the conditions are satisfied, an acknowledge pattern (ACK) will be issued afterward and the EEPROM writing process will start. At the end of programming, the chip will send an Acknowledge pattern (ACK). If at least one of the checks fails, the chip will issue a no acknowledge pattern (NAK) instead of ACK and return to the Standard Read Mode. The Transceiver will keep the RF field permanently "ON" during the whole writing process time. The Read After Write function (bit 17 of Control word) controls the mode of operation following a write operation. When "ON" the latest written word will be read out and output next to the ACK pattern and two Listen Windows (LIW-LIW) even if the word is read protected. When "OFF", the ACK is followed immediately by a LIW-LIW and FWR. The last written word is not output. If a request from the transceiver to return in receive mode (RM) is generated during the LIW, another word can be written in. Otherwise, the EM4150 will return in the Standard Read Mode. t wa t wee Write 1 word OUTPUT WORD n LIW ACK ACK LIW LIW FWR INPUT RM WRITE WORD ADDRESS DATA TRANSCEIVER RF FIELD "ON" t wa t wee Write several words OUTPUT WORD n LIW ACK ACK LIW INPUT RM WRITE WORD ADDRESS DATA TRANSCEIVER RF FIELD "ON" RM WRITE WORD ADDRESS DATA Read After Write function OUTPUT WORD n LIW t wa t wee Note: The Last Written is outpout even if Read Protected. ACK ACK LIW LIW Last Written LIW LIW FWR INPUT RM WRITE WORD ADDRESS DATA TRANSCEIVER RF FIELD "ON" t wa OUTPUT WORD n LIW NAK LIW LIW FWR INPUT RM WRITE WORD ADDRESS DATA TRANSCEIVER RF FIELD "ON" Fig. 17 Copyright © 2004, EM Microelectronic-Marin SA 8 www.emmicroelectronic.com R EM4150 EM4350 AC/DC Converter and Voltage Limiter Power On Reset (POR) When the EM4150 with its attached coil enters an electromagnetic field, the built in AC/DC converter will supply the chip. The DC voltage is monitored and a Reset signal is generated to initialise the logic. The contents of the Control word and Protection word will be downloaded to enable the functions (INIT). The Power On Reset is also provided in order to make sure that the chip will start issuing correct data. Hysteresis is provided to avoid improper operation at the limit level. VDD The AC/DC converter is fully integrated on chip and will extract the power from the incident RF field. The internal DC voltage will be clamped to avoid high internal DC voltage in strong RF fields. Resonance Capacitor The Resonance Capacitor is integrated, and its tolerance is adjusted to ± 2% over the whole production. Typical Capacitor Variation versus Temperature Vprh Vprhys Cr Tolerance [%] 100.3 100.2 t Reset 100.1 tinit EM4150 Active 100.0 99.9 99.8 t 99.7 -50 -30 -10 10 30 50 70 90 Fig. 18 Temperature [°C] Fig. 19 Lock All / Lock Memory Area The EM4150 can be converted to a Read Only chip or be configured to Read/Write and Read Only Areas by programming the protection word. This configuration can be locked by write inhibiting the Write Protection Word. Great care should be taken in doing this operation as there is no further possibility to change the Write Protection Word. The Control Word can also be protected in the same way thus freezing the operation mode. Special Timings The Processing Pause Time (tpp), Write Access Time (twa) and EEPROM Write Time (Twee) are timings where the EM4150 is executing internal operations. During these pauses, the RF field will be influenced. RF periods : 32 32 (Opt64) 16 16 (Opt32) 64 32 (Opt64) (Opt32) 3200 2624 (Opt64) (Opt32) Clock Extractor The Clock extractor will generate a system clock with a frequency corresponding to the frequency of the RF field. The system clock is used by a sequencer to generate all internal timings. t pp Same modulation as for a normal bit During Twa and Twee, the signal on the coil is damped due to a higher current consumption. t wa t wee Fig. 20 Data Extractor The transceiver generated field will be amplitude modulated to transmit data to the EM4150. The Data extractor demodulates the incoming signal to generate logic levels, and decodes the incoming data. Modulator The Data Modulator is driven by the serial data output from the memory which is Manchester encoded. The modulator will draw a large current from both coil terminals, thus amplitude modulating the RF field according to the memory data. Copyright © 2004, EM Microelectronic-Marin SA 9 www.emmicroelectronic.com R EM4150 EM4350 Communication from Transponder to the Transceiver ( READ MODE) The EM4150 modulates the amplitude of the RF field to transmit data to the transceiver. Data are output serially from the EEPROM and Manchester encoded. 1 bit 64 periods of RF field (Opt64) 32 periods of RF field (Opt32) 1 bit 32 periods (Opt64) 16 periods (Opt32) 1 bit 1 bit Data from EEPROM Coded Data Measured on the COIL Opt64 is the chip option with a bit period corresponding to 64 periods of the RF field Opt32 is the chip option with a bit period corresponding to 32 periods of the RF field Fig. 21 The EM4150 uses different patterns to send status information to the transceiver. Their structure can not be confused with a bit pattern sequence. These patterns are the Listen Window (LIW) to inform the transceiver that data can be accepted, the Acknowledge (ACK) indicating proper communication and end of EEPROM write, and the No Acknowledge (NAK) when something is wrong. The LIW, due to its special structure, can be used to synchronize the transceiver during a read operation. The LIW is sent before each word, and is sent twice before FWR. LIW 32 32 16 16 128 64 64 32 64 32 (Opt64) (Opt32) 32 32 16 16 ACK 96 48 32 16 96 48 32 16 (Opt64) (Opt32) 32 32 16 16 NAK 96 48 32 16 64 32 32 32 16 16 (Opt64) (Opt32) All numbers represent number of periods of RF field Opt64 is the chip option with a bit period corresponding to 64 periods of the RF field Opt32 is the chip option with a bit period corresponding to 32 periods of the RF field Fig. 22 Communication from the Transceiver to the Transponder (RECEIVE MODE) The EM4150 can be switched to the Receive Mode ONLY DURING A LISTEN WINDOW. The Transceiver is synchronized with the incoming data from the transponder and expects a LIW before each word. During the phase where the chip has its modulator "ON" (64/32 periods of RF [Opt64/Opt32] ), the transceiver has to send a bit "0". A certain phase shift in the read path of the transceiver can be accepted due to the fact that when entering Receive Mode, the Transceiver becomes the Master. At reception of the first "0", the chip immediately stops the LIW sequence and then expects another bit "0" to activate the receive mode. Once the EM4150 has received the first bit "0", the transceiver is imposing the timing for synchronisation. The EM4150 turns "ON" its modulator at the beginning of each frame of a bit period. To send a logic "1" bit, the transceiver continues to send clocks without modulation. After half a bit period, the modulation device of the EM4150 is turned "OFF" allowing recharge of the internal supply capacitor. To send a logic "0" bit, the transceiver stops sending clocks (100% modulation) during the first half of a bit period. The transceiver must not turn "OFF" the field after 7/4 clocks of the bit period (Opt64/Opt32). The field is stopped for the remaining first half of the bit period, and then turned "ON" again for the second half of the bit period. The 32rd/16th clock (Opt64/Opt32) defines the end of the bit To ensure synchronisation between the transceiver and the transponder, a logic bit set to "0" has to be transmitted at regular intervals. The RM pattern consists of two bits set to "0" thus allowing initial synchronisation. In addition, the chosen data structure contains even parity bits which will not allow more than eight consecutive bits set to logic "1" where no modulation occurs. Copyright © 2004, EM Microelectronic-Marin SA 10 www.emmicroelectronic.com R EM4150 EM4350 Communication from the Transceiver to the Transponder (RECEIVE MODE) (cont.) While the transceiver is sending data to the transponder, two different modulations will be observed on both coils. During the first half of the bit period, the EM4150 is switching "ON" its modulation device causing a modulation of the RF field. This modulation can also be observed on the transceiver's coil. The transceiver sending a bit "0" will switch "OFF" the field, causing a 100% modulation being observed on the transponder coil. Bit Period DATA : "1" "0" "0" "1" "0" "1" Transceiver Coil Transponder Coil Periods of RF field (Opt 64): Periods of RF field (Opt 32): 32 16 32 16 32 16 32 16 * Modulation induced by the Transceiver com * Renimumended Mi m : 7/4 periods (Opt64/Opt32) : 1 period Modulation induced by the Transponder Fig. 23 Copyright © 2004, EM Microelectronic-Marin SA 11 www.emmicroelectronic.com R EM4150 EM4350 Pad Description Pad 1 2 3 4 5 6 7 8 9 Name COIL1 VPOS TEST_IN VDD TEST_OUT TEST TEST_CLK VSS COIL2 Function Coil Terminal 1 Internal supply Test input with pull-down Positive Internal Supply Voltage Test Output Test Mode Input with pull-down Test Clock input with pull-down Negative Internal Supply Voltage Coil terminal 2 9 8 7 6 5 1 4 3 2 Packages CID Package FRONT VIEW PCB Package Y Z J K SYMBOL A B D e F g J K R MIN 8.2 3.8 5.8 0.38 1.25 0.3 0.42 0.115 0.4 TYP 8.5 4.0 6.0 0.5 1.3 0.4 0.44 0.127 0.5 MAX 8.8 4.2 6.2 0.62 1.35 0.5 0.46 0.139 0.6 TOP VIEW B X D MARKING AREA A R e C2 F g C1 F Dimensions are in mm C2 C1 MAX SYMBOL MIN TYP X 8.0 Y 4.0 Z Dimensions are in mm 1.0 Fig. 24 Fig. 25 Chip Dimensions Fig. 26 Copyright © 2004, EM Microelectronic-Marin SA 12 Fig. 27 www.emmicroelectronic.com R EM4150 EM4350 Ordering Information Die Form This chart shows general offering; for detailed Part Number to order, please see the table “Standard Versions” below. EM4150 A6 W S 11 Circuit Nb: EM4150: standard pads EM4350: mega pads Version: A6 = Manchester, 64 clocks per bit A5 = Manchester, 32 clocks per bit Die form: WW = W afer WS = Sawn W afer/Frame WT = Sticky Tape WP = W affle Pack (note 1) - %%% Customer Version: %%% = only for custom specific version Bumping: " " (blank) = no bumps E = with Gold Bumps (Note 2) Thickness: 6 = 6 mils (152um) 7 = 7 mils (178um) 11 = 11 mils (280um) 21 = 21 mils (533um) 27 = 27 mils (686um) Packaged Devices This chart shows general offering; for detailed Part Number to order, please see the table “Standard Versions” below. EM4150 A6 CI2LC - %%% Circuit Nb: EM4150: standard pads Version: A6 = Manchester, 64 clocks per bit A5 = Manchester, 32 clocks per bit Package/Card & Delivery Form: CI2LB = CID Pack, 2 long pins (2.5mm), in tape CI2LC = CID Pack, 2 long pins (2.5mm), in bulk CI2SB = CID Pack, 2 short pins (1.25mm), in tape CI2SC = CID Pack, 2 short pins (1.25mm), in bulk CB2RC = PCB Package, 2 pins, in bulk SO8A = SO-8 Package, in stick (note 1) Customer Version: %%% = only for custom specific version Remarks: • For ordering please use table of “Standard Version” table below. • For specifications of Delivery Form, including gold bumps, tape and bulk, as well as possible other delivery form or packages, please contact EM Microelectronic-Marin S.A. • Note 1: This is a non-standard package. Please contact EM Microelectronic-Marin S.A for availability. • Note 2: EM4350 is preferably used with gold bumps. Use of EM4150 with gold bump together with direct technology is subject to license, please contact EM Sales Office. Copyright © 2004, EM Microelectronic-Marin SA 13 www.emmicroelectronic.com R EM4150 EM4350 Standard Versions & Samples: For samples please order exclusively: Part Number EM4150A6CI2LC EM4150A6CB2RC Bit coding Manchester Manchester Cycle/ bit 64 64 Pads Package Delivery Form Standard CID package, 2 pins (length 2.5mm) bulk Standard PCB Package, 2 pins bulk The versions below are considered standards and should be readily available. For other versions or other delivery form, please contact EM Microelectronic-Marin S.A. Please make sure to give complete part number when ordering, without spaces between characters. Part Number EM4150A5CB2RC EM4150A5CI2LC EM4150A5CI2SC EM4150A6CB2RC EM4150A6CI2LB EM4150A6CI2LC EM4150A6CI2SB EM4150A6CI2SC EM4150A6SO8A EM4150A6WS6 EM4150A6WS7 EM4150A6WW27 EM4150A6WW7 EM4150XXYYY-%%% EM4350A6WP11E EM4350A6WS11E EM4350A6WT11E EM4350XXYYY-%%% Bit coding Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Manchester Cycle/ bit 32 32 32 64 64 64 64 64 64 64 64 64 64 32/64 64 64 64 32/64 Pads Package/Die Form Delivery Form / Bumping Standard PCB Package, 2 pins Standard CID package, 2 pins (length 2.5mm) Standard CID package, 2 pins (length 1.25mm) Standard PCB Package, 2 pins Standard CID package, 2 pins (length 2.5mm) Standard CID package, 2 pins (length 2.5mm) Standard CID package, 2 pins (length 1.25mm) Standard CID package, 2 pins (length 1.25mm) Standard SO-8 package Standard Sawn wafer, 6 mils Standard Sawn wafer, 7 mils Standard Unsawn wafer, 27 mils Standard Unsawn wafer, 7 mils Standard custom Mega Mega Mega Mega Die in waffle pack, 11 mils Sawn wafer, 11 mils Die on sticky tape, 11 mils custom bulk bulk bulk bulk tape bulk tape bulk stick no bumps no bumps no bumps no bumps custom with gold bumps with gold bumps with gold bumps custom Product Support Check our Web Site under Products/RF Identification section. Questions can be sent to info@emmicroelectronic.com EM Microelectronic-Marin SA cannot assume responsibility for use of any circuitry described other than circuitry entirely embodied in an EM Microelectronic-Marin SA product. EM Microelectronic-Marin SA reserves the right to change the circuitry and specifications without notice at any time. You are strongly urged to ensure that the information given has not been superseded by a more up-to-date version. © EM Microelectronic-Marin SA, 08/04, Rev. F Copyright © 2004, EM Microelectronic-Marin SA 14 www.emmicroelectronic.com