EM MICROELECTRONIC - MARIN SA
EM5060
Low Voltage CMOS Driver Circuit
Features
• • • • • • • Four low resistance output drivers for bipolar or unipolar watch stepping motors. Low transversal transition current. Very low current consumption: 0.1 µA at 25°C. Two different output resistances programmable by metal mask. Wide power supply voltage range: 1.1 to 3.5 V. Tristate input for applications as fast bus driver. ESD and latch-up protections on input and output pads.
Functional Diagram
Rch =200Ω
M OUT1 VDD EM5060 V1 VSS OUT2 OUT3
Rch =200Ω
M OUT4
Description
The EM5060 (previously named H5060) is a low power integrated circuit in HCMOS Silicon Gate Technology designed to drive bipolar or unipolar stepping motors. This device contains four identical and independent noninverting circuits which can be connected by metal mask programation so as to obtain two identical non-inverting circuits with a lower resistance output. Each buffer is driven by a special cell which dephases the P and N transistor signal input, for a minimization of the transversal transition current. A tristate input HIZ, with internal pulldown resistor provides the high impedance state of the four outputs.
HIZ IN1 IN2 IN3 IN4
Rch =200Ω
M OUT1 VDD VSS OUT2
EM5060 V2
Application
• • • Motor driver for watch/clock application Bus drivers LED driver
HIZ IN1 IN2
Fig. 1
Pin Assignment
Pad OUT4 OUT3 OUT2 OUT1 VDD HIZ IN1 IN2 IN3 IN4 VSS Function Output buffer n°4 Output buffer n°3 Output buffer n°2 Output buffer n°1 Positive supply voltage Tri state input Input buffer n°1 Input buffer n°2 Input buffer n°3 Input buffer n°4 Negative supply voltage
VDD OUT1 OUT2 OUT3 OUT4
VDD NC OUT1 OUT2 NC
HIZ
EM5060 V 1
HIZ
EM5060 V 2
IN1
IN2
IN3
IN4 VSS
NC
IN1 IN2
NC
VSS
Fig. 2
Copyright 2002, EM Microelectronic-Marin SA
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EM5060
Absolute Maximum Ratings
Parameter Symbol Min Typ Max Unit
Handling Procedures 5.5 VDD+0.3 +120 V V °C
Table 1
Supply Voltage Voltage at remaining pin Storage temperature
VDD Vpin Tstore
-0.3 VSS-0.3 -55
This device contains circuitry to protect the terminals against damage due to high static voltages or electrical fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than minimum rated voltages to this circuit.
Operating Conditions
Parameter Symbol Min Typ Max Units
Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure to conditions beyond specified electrical characteristics may affect device reliability or cause malfunction.
Operating temperature
Topr
-20
+70
°C
Table 3
Recommended Operating Conditions
Parameter Symbol Value Units
Ambient temperature Motor resistance Positive supply Negative supply Supply source resistance
T Rch VDD VSS RI
25 200 1.55 0.0 10
°C Ohms V V Ohms
Table 2
Electrical and Switching Characteristics
at recommended operating conditions (valid unless otherwise specified) Parameter Supply voltage Standby current Symbol VDD Conditions Operating Imot = 0 IN1, IN2, IN3, IN4 at VDD or VSS HIZ at VSS or open VDD = 1.2 V VIL = VSS VIH = VDD Overall voltage range HIZ at VDD Rch = 200 Ω,VDD = 1.2 V Version V1 Version V2 VDD = 1.50 V Version V1 Version V2 VDD =3.0 V Version V1 Version V2 VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF Min. 1.1 Typ. 1.55 Max. 3.5 100 Unit V nA
Inputs Pulse width tWL tWH VIL VIH IHIZ
1 1 VDD-0.3 0.5 VSS VDD 2 0.4 5
Voltage HIZ Input Current Outputs Motor Output Current
ms ms V V µA
IOUT
±4.3 ±4.8 ±6.0 ±6.4 ±13.0 ±13.3
±5.0 ±6.6 ±13.5 5 5 3 3 100 100 100 100
mA mA mA mA mA mA µs µs µs µs
Table 4
Timing Characteristics Propagation delay Transition time
tPHL tPLH tTHL tTLH
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EM5060
Timing Waveforms
IN
t
VGP
t
VGN
t
OUT
t : HIGH IMPEDANCE OUTPUT
Fig. 3
Block Diagram
Version V1
Version V2
IN1
Anti-current inverter
OUT1
IN1
Anti-current inverter
OUT1
IN2
Anti-current inverter
OUT2
IN2
Anti-current inverter
OUT2
IN3
Anti-current inverter
OUT3
IN4
Anti-current inverter
OUT4
Fig. 4
Copyright 2002, EM Microelectronic-Marin SA
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EM5060
Functional Description
VDD
In
VGP ANTI-CURRENT VGN INVERTER
Out
VSS
Fig. 5
Chip Information
VDD X=19, Y=980 VDD X=19, Y=98
OUT4 X=1066
HIZ X=0, Y=508
EM5060 V1 H5060 v1
HIZ X=0, Y=508
EM5060 V2 H5060 v2
VSS X=1082, Y=0
IN2 X=312
IN3 X=590
IN4 X=837
IN2 X=590
NOTE: The origin (0,0) is the lower left coordinate of center pads The lower left corner of the chip shows distances N.C. Not connected All dimensions in microns
Fig. 6
Ordering Information EM5060 is available in two versions: • Version V1 contains four input/outputs (INPUTS = IN1, IN2, IN3, IN4 ; OUTPUTS = OUT1, OUT2, OUT3, OUT4). • Version V2 contains two input/outputs (INPUTS = IN1, IN2 ; OUTPUTS = OUT1, OUT2).
When ordering, please specify the complete Part Number below.
Part Number EM5060V1WP11 EM5060V1WS11 EM5060V2WP11 EM5060V2WS11 Version V1 V1 V2 V2 Die & Delivery Form Die in waffle pack, 11 mils thickness Sawn wafer, 11 mils thickness Die in waffle pack, 11 mils thickness Sawn wafer, 11 mils thickness
EM Microelectronic-Marin SA cannot assume responsibility for use of any circuitry described other than circuitry entirely embodied in an EM Microelectronic-Marin SA product EM Microelectronic-Marin SA reserves the right to change the specifications without notice at any time. You are strongly urged to ensure that the information given has not been superseded by a more up to date version.
© 2002 EM Microelectronic-Marin SA, 05/02 Rev. B/481 Copyright 2002, EM Microelectronic-Marin SA 4 www.emmicroelectronic.com
IN1 X=312
IN1 X=65
NC X=837
NC X=65
X=-160 Y=-171
X=-160 Y=-171
VSS X=1082, Y=0
NC X=1066
OUT1 X=294
OUT2 X=541 OUT3 X=819
NC X=294
OUT1 X=541
OUT2 X=819
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