EM6112K1600TPA-55IF

512Kx8 LP SRAM EM6112K800V Series GENERAL DESCRIPTION The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6112K800V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES Fast access time: 45/55/70ns Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2µA (TYP.) Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data retention voltage: 1.5V (MIN.) Package: 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA FUNCTIONAL BLOCK DIAGRAM Vcc Vss A0-A18 DECODER 512Kx8 MEMORY ARRAY DQ0-DQ7 I/O DATA CURCUIT COLUMN I/O CE# WE# OE# CONTROL CIRCUIT PIN DESCRIPTION SYMBOL A0 - A18 DQ0 – DQ7 CE# WE# OE# Vcc Vss DESCRIPTION Address Inputs Data Inputs/Outputs Enable Input Write Enable Input Output Enable Input Power Supply Ground 1 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series PIN CONFIGURATION SOP A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 Vss TSOP-I/STSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 A17 WE# A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 A11 A9 A8 A13 WE# A17 A15 Vcc A18 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 DQ0 A0 A1 A2 A3 2 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series TFBGA A B C D E F G H A0 DQ4 DQ5 Vss Vcc DQ6 DQ7 A9 1 A1 A2 NC WE# NC A3 A4 A5 A6 A7 A8 DQ0 DQ1 Vcc Vss DQ2 DQ3 A14 6 OE# A10 2 A17 CE# A11 3 A18 A16 A12 4 A15 A13 5 3 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series ABSOLUTE MAXIMUN RATINGS* PARAMETER Terminal Voltage with Respect to Vss Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL VTERM TA TSTG PD IOUT TSOLDER RATING -0.5 to 4.6 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 260 °C W mA °C °C UNIT V *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write CE# H L L L OE# X H L X WE# X H H L I/O OPERATION High-Z High-Z DOUT DIN SUPPLY CURRENT ISB,ISB1 ICC,ICC1 ICC,ICC1 ICC,ICC1 Note: H = VIH, L = VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS PARAMETER Supply Voltage Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Average Operating Power supply Current SYMBOL Vcc VIH*1 VIL*2 ILI ILO VOH VOL ICC ICC1 Standby Power Supply Current ISB ISB1 TEST CONDITION MIN. 2.7 2.0 -0.2 -1 -1 2.2 -45 -55 -70 TYP. *5 3.0 2.7 40 30 20 4 0.3 20 2 MAX. 3.6 Vcc+ 0.3 0.6 +1 1 0.4 50 40 30 5 0.5 80 15 UNIT V V V µA µA V V mA mA mA mA mA µA µA Vcc ≧ VIN ≧ Vss VCC ≧ VOUT ≧ VSS, Output Disabled IOH = -1mA IOL = 2mA Cycle time = Min. CE# = VIL , II/O = 0mA Cycle time = 1µs CE#≦0.2V and II/O = 0mA other pins at 0.2V or VCC-0.2V CE# = VIH CE# V ≧ VCC - 0.2V -L -LL Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. 10µA for special request 5. Typical values are included for reference only and are not guaranteed or tested. Typical valued are measured at VCC = VCC(TYP.) and TA = 25°C 4 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series CAPACITANCE (TA = 25°C , f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX. 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA AC ELECTRICAL CHARACTERISTICS READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH MIN. 45 10 5 10 -45 MAX. 45 45 25 15 15 -55 MAX. 55 55 30 20 20 70 MAX. 70 70 35 25 25 UNIT ns ns ns ns ns ns ns ns ns MIN. 55 10 5 10 MIN. 70 10 5 10 SYM. tWC tAW tCW tAS tWP twr tDW tDH tOW* tWHZ* MIN. 45 40 40 0 35 0 20 0 5 - -45 MAX. 15 MIN. 55 50 50 0 45 0 25 0 5 - -55 MAX. 20 MIN. 70 60 60 0 55 0 30 0 5 - 70 MAX. 25 UNIT ns ns ns ns ns ns ns ns ns ns *These parameters are guaranteed by device characterization, but not production tested. 5 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA tOH Dout Previous Data Valid Data Valid READ CYCLE 2 (CE#, CE2 and OE# controlled) (1,3,4,5) tRC Address tAA CE# OE# tACE tOH tOE tOLZ tCLZ tOHZ tCHZ Valid Data Dout High-Z Notes : 1.WE# is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low. 3.Address must be valid prior to or coincident with CE# = low; otherwise tAA is the limiting parameter. 4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ. 6 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6) tWC Address CE# tAW tCW WE# tAS tWP tWR tWHZ Dout ( 4) tDW High-Z Din WRITE CYCLE 2 (CE# Controlled) (1,2,5,6) tWC Address CE# tAS tCW WE# tWP tAW Valid Data tOW ( 4) tDH tWR tWHZ Dout tDW High-Z Din Valid Data tDH High-Z Notes : 1. WE#, CE# must be high during all address transitions. 2. A write occurs during the overlap of a low CE#, low WE#. 3. During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 4. During this period, I/O pins are in the output state, and input signals must not be applied. 5. If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 6. tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 7 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time tRC* = Read Cycle Time SYMBOL VDR IDR TEST CONDITION CE# V ≧ VCC - 0.2V VCC = 1.5V CE# V ≧ VCC - 0.2V See Data Retention Waveforms (below) -L -LL -LLE -LLI MIN. 1.5 0 tRC* TYP. 1 0.5 0.5 MAX. 3.6 50 8 12 UNIT V µA µA µA ns ns tCDR tR DATA RETENTION WAVEFORM VDR ≧ 1.5V Vcc Vcc(min.) tCDR CE# ≧ Vcc-0.2V Vcc(min.) tR VIH CE# VIH 8 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series PACKAGE OUTLINE DIMENSION 32 pin 450 mil SOP Package Outline Dimension 32 pin 8mm x 20mm TSOP-I Package Outline Dimension 9 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series 32 pin 8mm x 13.4mm STSOP Package Outline Dimension 10 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series 36-ball 6mm × 8mm TFBGA Package Outline Dimension 11 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series Product ID Information EM 61 12K 8 0 0 V B A – 45 IF* Configuration: Option 8: x8 Voltage: 16: x16 V: 3V W: 2.7V Address Density ~5.5V 12K: 512K EOREX T: 5V Package: Manufactured S: STSOP Memory P: PDIP F: SOP B: TFBGA T: TSOP I: TSOP-I * Product ID example SRAM Family 61: Standard Version Option Speed: 45ns 55ns 70ns TEMP: Blank: Normal I: Industrial Pb-Free PKG: Blank: Normal F: Pb-free 12 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series ©COPYRIGHT 2004 EOREX CORPORATION The information in this document is subject to change without notice. Printed in Canada EOREX makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of EOREX. EOREX subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. EOREX CORPORATION http://www.eorex.com sales@eorex.com 2F., No. 301-3, Guang-Ming 6th Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC TEL: +886-3-5585138 FAX: +886-3-5585139 13 DCC-SR-041005-A