EPC2035

eGaN® FET DATASHEET EPC2035 EPC2035 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 45 mΩ ID , 1.7 A D G EFFICIENT POWER CONVERSION HAL S Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings PARAMETER VDS ID VALUE Drain-to-Source Voltage (Continuous) 60 Drain-to-Source Voltage (up to 10,000 5 ms pulses at 125°C) 72 Continuous (TA = 25°C, RθJA = 546°C/W) 1.7 Pulsed (25°C, TPULSE = 300 µs) 24 UNIT V A Gate-to-Source Voltage 6 Gate-to-Source Voltage –4 TJ Operating Temperature –40 to 150 TSTG Storage Temperature –40 to 150 VGS V °C Thermal Characteristics PARAMETER TYP RθJC Thermal Resistance, Junction-to-Case 6.5 RθJB Thermal Resistance, Junction-to-Board 65 RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 UNIT EPC2035 eGaN® FETs are supplied only in passivated die form with solder bumps Die Size: 0.9 mm x 0.9 mm Applications • High Speed DC-DC conversion • Wireless Power Transfer • High Frequency Hard-Switching and Soft-Switching Circuits • Lidar/Pulsed Power Applications Benefits • Ultra High Efficiency • Ultra Low RDS(on) • Ultra Low QG • Ultra Small Footprint °C/W Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS MIN TYP MAX UNIT 250 µA BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 300 µA IDSS Drain-Source Leakage VDS = 48 V, VGS = 0 V 20 Gate-to-Source Forward Leakage VGS = 5 V 0.1 1 mA Gate-to-Source Reverse Leakage VGS = -4 V 20 250 µA 1.4 2.5 V VGS = 5 V, ID = 1 A 35 45 mΩ IS = 0.5 A, VGS = 0 V 2 IGSS VGS(TH) Gate Threshold Voltage RDS(on) Drain-Source On Resistance VSD Source-Drain Forward Voltage VDS = VGS, ID = 0.8 mA 60 0.8 V V All measurements were done with substrate shorted to source. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | | 1 eGaN® FET DATASHEET EPC2035 Dynamic Characteristics (TJ= 25˚C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX 95 115 2 3 90 CISS Input Capacitance CRSS Reverse Transfer Capacitance COSS Output Capacitance 60 RG Gate Resistance 0.5 QG Total Gate Charge QGS Gate-to-Source Charge QGD Gate-to-Drain Charge QG(TH) Gate Charge at Threshold QOSS Output Charge QRR Source-Drain Recovery Charge VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 5 V, ID = 1A 880 UNIT pF Ω 1150 250 VDS = 30 V, ID = 1 A 160 270 pC 170 VDS = 30 V, VGS = 0 V 2600 3900 0 All measurements were done with substrate shorted to source. Figure 1: Typical Output Characteristics 25°C VGS = 5 V VGS = 4 V VGS = 3 V VGS = 2 V 15 20 ID – Drain Current (A) 20 ID – Drain Current (A) Figure 2: Transfer Characteristics 10 5 0 15 5 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS – Gate-to-Source Voltage (V) 4.0 4.5 5.0 Figure 4: RDS(on) vs. VGS for Various Temperatures Figure 3: RDS(on) vs. VGS for Various Drain Currents 140 140 ID = 0.5 A ID = 1 A ID = 1.5 A ID = 2 A 120 100 RDS(on) – Drain-to-Source Resistance (mΩ) RDS(on) – Drain-to-Source Resistance (mΩ) VDS = 3 V 10 VDS – Drain-to-Source Voltage (V) 80 60 40 20 0 25˚C 125˚C 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) 4.5 5.0 EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | 120 25˚C 125˚C 100 ID = 1 A 80 60 40 20 0 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) 4.5 5.0 | 2 eGaN® FET DATASHEET EPC2035 Figure 5b: Capacitance (Log Scale) Figure 5a: Capacitance (Linear Scale) 160 140 Capacitance (pF) 120 Capacitance (pF) 100 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 100 80 60 10 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 1 40 20 0 0 10 20 30 40 50 0.1 60 0 10 20 30 40 50 60 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Gate Charge Figure 7: Reverse Drain-Source Characteristics 3 2 1 0 0 0.5 0.4 0.6 0.8 QG – Gate Charge (nC) 15 10 5 0 1.0 Figure 8: Normalized On Resistance vs. Temperature 1.30 ID = 1 A VGS = 5 V Normalized Threshold Voltage Normalized On-State Resistance RDS(on) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VSD – Source-to-Drain Voltage (V) 4.5 5.0 1.40 1.6 1.4 1.2 1.0 0.8 0 Figure 9: Normalized Threshold Voltage vs. Temperature 2.0 1.8 25˚C 125˚C VGS = 0 V 20 ID = 1 A VDS = 30 V 4 ISD – Source-to-Drain Current (A) VGS – Gate-to-Source Voltage (V) 5 ID = 0.8 mA 1.20 1.10 1.00 0.90 0.80 0.70 0 25 50 75 100 TJ – Junction Temperature (°C) 125 150 0.60 0 25 50 75 100 TJ – Junction Temperature (°C) 125 150 All measurements were done with substrate shortened to source. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | | 3 eGaN® FET DATASHEET EPC2035 Figure 10: Gate Leakage Current 3.5 IG – Gate Current (mA) 3.0 25˚C 125˚C 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) 6 Figure 11: Transient Thermal Response Curves ZθJB, Normalized Thermal Impedance Junction-to-Board 1 Duty Cycle: 0.5 0.1 0.1 0.05 0.02 0.01 0.01 PDM t1 0.001 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJB x RθJB + TB Single Pulse 0.0001 10-5 t2 10-4 10-3 10-2 10-1 1 10+1 tp, Rectangular Pulse Duration, seconds ZθJB, Normalized Thermal Impedance Junction-to-Case 1 Duty Cycle: 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.001 PDM t1 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZθJC x RθJG + TC Single Pulse 0.0001 10-6 t2 10-5 10-4 10-3 10-2 10-1 1 tp, Rectangular Pulse Duration, seconds EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | | 4 eGaN® FET DATASHEET EPC2035 Figure 12: Safe Operating Area I D – Drain Current (A) 100 10 Limited by RDS(on) Pulse Width Pulse 100Width ms 100 ms 10 ms ms 10 ms 11100 ms µs 1 100 µs 0.1 0.1 1 10 100 VDS - Drain-Source Voltage (V) TAPE AND REEL CONFIGURATION 4mm pitch, 8mm wide tape on 7”reel d e f Loaded Tape Feed Direction g 7” reel b AA YYY a c a b c (see note) d e f (see note) g 8.00 1.75 3.50 4.00 4.00 2.00 1.5 7.90 1.65 3.45 3.90 3.90 1.95 1.5 Gate solder bar is under this corner Die is placed into pocket solder bar side down (face side down) EPC2035 (note 1) Dimension (mm) target min Die orientation dot max 8.30 1.85 3.55 4.10 4.10 2.05 1.6 Note 1: MSL 1 (moisture sensitivity level 1) classified according to IPC/JEDEC industry standard. Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. DIE MARKINGS Die orientation dot Gate Pad bump is under this corner AA YYY EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | Part Number EPC2035 Laser Markings Part # Marking Line 1 Lot_Date Code Marking line 2 AA YYY | 5 eGaN® FET DATASHEET EPC2035 A DIE OUTLINE Solder Bump View g Micrometers 2 d B 4 3 c Seating Plane 900 A B c d e f g 870 870 450 450 210 210 187 900 900 450 450 225 225 208 930 930 450 450 240 240 229 The land pattern is solder mask defined Solder mask is 10 μm smaller per side than bump (measurements in µm) 1 MAX 165+/- 17 (625) Side View RECOMMENDED LAND PATTERN Nominal f e MIN 815 Max 1 Pads 1 is Gate; Pad 3 is Drain; Pads 2, 4 are Source DIM Pads 1 is Gate; 3 2 225 450 200 +20 / - 10 (*) 242 Pads 2, 4 are Source 4 225 900 Pad 3 is Drain; X4 450 * minimum 190 RECOMMENDED STENCIL DRAWING 900 Recommended stencil should be 4mil (100 µm) thick, must be laser cut, openings per drawing. 250 R6 0 (measurements in µm) 450 900 Intended for use with SAC305 Type 4 solder, reference 88.5% metals content. 225 450 225 Additional assembly resources available at https://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. eGaN® is a registered trademark of Efficient Power Conversion Corporation. EPC Patent Listing: epc-co.com/epc/AboutEPC/Patents.aspx EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2021 | Information subject to change without notice. Revised April, 2021 | 6