EPC8003ENGR

EPC8003 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 100V • RDS(on), 300 mΩ • ID, 2.5 A • Optimized eGaN® FET for high frequency applications EPC8003 eGaN FETs are supplied only in passivated die form with solder bars • Pb-Free (RoHS Compliant), Halogen Free Applications: • Ultra high speed DC-DC conversion • RF Envelope Tracking • Wireless Power Transfer • Game console and industrial movement sensing (LiDAR) MAXIMUM RATINGS STATIC CHARACTERISTICS TJ = 25 °C unless otherwise stated Specifications are with Substrate shorted to Source where applicable Subject to Change without Notice www.epc-co.com COPYRIGHT 2013 Page 1 EPC8003 – Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC CHARACTERISTICS TJ = 25 °C unless otherwise stated Specifications are with Substrate shorted to Source where applicable THERMAL CHARACTERISTICS Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. Subject to Change without Notice www.epc-co.com COPYRIGHT 2013 Page 2 EPC8003 – Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 1: Figure 2: Figure 3: Figure 4: Figure 5a: Figure 5b: Linear Scale Subject to Change without Notice Log Scale www.epc-co.com COPYRIGHT 2013 Page 3 EPC8003 – Enhancement Mode Power Transistor Preliminary Specification Sheet Figure 6: Figure 7: Figure 8: Figure 9: All measurements were done with substrate shorted to source Subject to Change without Notice www.epc-co.com COPYRIGHT 2013 Page 4 EPC8003 – Enhancement Mode Power Transistor Preliminary Specification Sheet S-PARAMETER CHARACTERISTICS VGSQ = 1.65 V, VDSQ = 50 V, IDQ = 0.35 A Pulsed measurement, Heat-Sink Installed, Z0 = 50 Ω Figure 10: Smith Chart Frequency [MHz] 200 500 1000 1200 1500 2000 2400 3000 Figure 11: Gain Chart Gate (ZGS) [Ω] 2.20 – j14.48 1.02 – j5.15 0.79 – j0.40 0.85 + j0.79 0.95 + j2.37 1.21 + j5.01 1.43 + j7.05 2.21 + j11.18 Table 1: S-Parameter Table Drain (ZDS) [Ω] 12.63 – j40.14 1.71 – j16.51 0.61 – j6.05 0.80 – j4.20 1.15 - j1.93 2.14 + j0.68 2.79 + j2.56 3.52 + j5.39 Download S-parameter files at www.epc-co.com Figure 12: Device Reflection Subject to Change without Notice Figure 13: Taper and Reference Plane details – Device Connection www.epc-co.com COPYRIGHT 2013 Page 5 EPC8003 – Enhancement Mode Power Transistor Preliminary Specification Sheet DIE MARKINGS DIE OUTLINE Solder Bar View Side View Subject to Change without Notice www.epc-co.com COPYRIGHT 2013 Page 6 EPC8003 – Enhancement Mode Power Transistor Preliminary Specification Sheet RECOMMENDED LAND PATTERN (units in µm) Land pattern is solder mask defined Solder mask opening is 10 µm smaller per side than bump RECOMMENDED STENCIL (units in µm) Recommended stencil should be 4mil (100µm) thick, must be laser cut, openings per drawing. Note that openings for pads 5 & 6 are larger than solder mask opening. Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein. Preliminary specification sheet contains informaton regarding a product EPC is considering for production release. EPC does not assume any liability arising out of the application or use of any product or circuit described herin; neither does it convey any license under its patent rights, nor the rights of other. eGaN® is a registered trademark of Efficient Power Conversion Corporation. U.S. Patents 8,350,294; 8,404,508; 8,431,960; 8,436,398 Subject to Change without Notice www.epc-co.com Revised September, 2013 COPYRIGHT 2013 Page 7