Development Board EPC9001
Quick Start Guide
40 V Half-Bridge with Gate Drive, Using EPC2015
VDD
PWM
Input
Gate Drive
Regulator
Logic and
Dead-time
Adjust
Gate Drive
Supply
Half-Bridge with Bypass
VIN
LM5113
Gate
Driver
OUT
Figure 1: Block Diagram of EPC9001 Development Board
Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/15 A (500kHz) Buck converter
CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage
7 V – 12 V
–
EPC900 1, 40 V DEVELOPMENT BOARD
Rev. 5.0
eGaN® FET © EPC 2013
VDD Supply
+
Gate Drive Supply
(Note Polarity)
A
IIN
+
Switch Node
VIN V
–
(For Efficiency
Measurement)
+
< 28 V
VIN Supply
–
External Circuit
PWM Input
EPC
EFFICIENT POWER CONVERSION
Figure 2: Proper Connection and Measurement Setup
EPC900 1, 40 V DEVELOPMENT BOARD
Rev. 5.0
eGaN® FET © EPC 2013
Do not use probe ground lead
Ground probe
against TP3
EPC
EFFICIENT POWER CONVERSION
Minimize loop
Figure 3: Proper Measurement of Switch Node – OUT
Place probe in large via at OUT
Quick Start Procedure
Development board EPC9001 is easy to set up to evaluate the perform
and measurement setup and follow the procedure below:
1. With power off, connect the input power supply bus to +VIN (J5, J6)
2. With power off, connect the switch node of the half bridge OUT (J3
3. With power off, connect the gate drive input to +VDD (J1, Pin-1) and
4. With power off, connect the input PWM control signal to PWM (J2,
5. Turn on the gate drive supply – make sure the supply is between 7
6. Turn on the bus voltage to the required value (do not exceed the a
7. Turn on the controller / PWM input source and probe switching no
8. Once operational, adjust the bus voltage and load PWM control wi
efficiency and other parameters.
NOTE. When measuring the high frequency content switch node (OUT), care must be
oscilloscope probe tip through the large via on the switch node (designed for this pu
Figure 3 for proper scope probe technique.
THERMAL CONSIDERATIONS
The EPC9001 development board showcases the EPC2015 eGaN FET. Althou
vices, their relatively smaller size does magnify the thermal management re
bient temperature and convection cooling. The addition of heat-sinking an
devices, but care must be taken to not exceed the absolute maximum die te
NOTE. The EPC9001 development board does not have any current or therm
mance of the EPC2015 eGaN FET. Refer to Figure 2 for proper connect
) and ground / return to –VIN (J7, J8).
3, J4) to your circuit as required.
d ground return to –VDD (J1, Pin-2).
, Pin-1) and ground return to any of the remaining J2 pins.
7 V and 12 V range.
absolute maximum voltage of 40 V on VOUT).
ode to see switching operation.
ithin the operating range and observe the output switching behavior,
e taken to avoid long ground leads. Measure the switch node (OUT) by placing the
urpose) and grounding the probe directly across the GND terminals provided. See
ugh the electrical performance surpasses that for traditional silicon deequirements. The EPC9001 is intended for bench evaluation with low amnd forced air cooling can significantly increase the current rating of these
emperature of 125°C.
mal protection on board.
DESCRIPTION
The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate
drives, featuring the EPC2015 enhancement mode (eGaN®) field
effect transistor (FET). The purpose of this development board is
to simplify the evaluation process of the EPC2015 eGaN FET by including all the critical components on a single board that can be
easily connected into any existing converter.
The EPC9001 development board is 2” x 1.5” and contains not
only two EPC2015 eGaN FET in a half bridge configuration using
Table 1: Performance Summary (TA = 25°C)
SYMBOL PARAMETER
VDD
Gate Drive Input Supply Range
VIN
Bus Input Voltage Range
VOUT
Switch Node Output Voltage
IOUT
Switch Node Output Current
VPWM
PWM Logic Input Voltage Threshold
CONDITIONS
Input ‘High’
Input ‘Low’
Minimum ‘High’ State Input Pulse Width
VPWM rise and fall time
Minimum ‘Low’ State Input Pulse Width
VPWM rise and fall time
* Assumes inductive load, maximum current depends on die temperature – actual maximum curr
# Limited by time needed to ‘refresh’ high side bootstrap supply voltage.
www.epc-co.com
the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout
for optimal switching performance. There are also various probe
points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in
Figure 1.
For more information on the EPC2015s eGaN FET please refer to
the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.
MIN
MAX
UNITS
7
12
V
28*
V
40
V
15*
A
3.5
6
V
0
1.5
V
e < 10ns
60
ns
e < 10ns
200#
ns
rent with be subject to switching frequency, bus voltage and thermals.
Qty
3
2
2
3
2
3
1
2
1
2
1
1
4
2
1
1
1
1
1
0
0
0
Item
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Table 2 : Bill of Material
P1, P2
D3
R14
U4
U3
U2
U1
TP3
TP1, TP2
R19, R20, R23, R24
R5
R4
R2, R15
R1
Q1, Q2
J3, J4, J5, J6, J7, J8
J1, J2, J9
D1, D2
C21, C22, C23
C9, C19
C16, C17
C4, C10, C11,
Reference
Optional Potentiometer
Optional Diode
Optional Resistor
I.C., Logic
I.C., Regulator
I.C., Gate driver
I.C., Logic
Connector
Test Point
Resistor, 0 Ohm, 1/16W
Resistor, 47 Ohm, 1%, 1/8W
Resistor, 7.5 Ohm, 1%, 1/8W
Resistor, 0 Ohm, 1/8W
Resistor, 10.0K, 5%, 1/8W
eGaN® FET
Connector
Connector
Schottky Diode, 30V
Capacitor, 4.7uF, 10%, 50V, X5R
Capacitor, 0.1uF, 10%, 25V, X5R
Capacitor, 100pF, 5%, 50V, NP0
Capacitor, 1uF, 10%, 25V, X5R
Part Description
Fairchild, NC7SZ08L6X
Microchip, MCP1703T-5002E/MC
Texas Instruments, LM5113TME
Fairchild, NC7SZ00L6X
1/40th of Tyco, 4-103185-0
Keystone Elect, 5015
Stackpole, RMCF0402ZT0R00
Stackpole, RMCF0603FT47R0
Stackpole, RMCF0603FT7R50
Stackpole, RMCF0603ZT0R00
Stackpole, RMCF0603FT10K0
EPC, EPC2015
FCI, 68602-224HLF
2pins of Tyco, 4-103185-0
Diodes Inc., SDM03U40-7
TDK, C2012X5R1H475K125AB
TDK, C1005X5R1E104K
Kemet, C0402C101K5GACTU
Murata, GRM188R61E105KA12D
Manufacturer / Part #
D
C
B
A
1
2
1
PWM2
CON2
J9
1
2
CON2
J2
1
2
CON2
J1
7 - 12 Vdc
R15
Zero
PWM1
NC
3
4
P2
Optional
NC7SZ08L6X
GND
B
U4
A
D2
2
Y
VDD
47.0
R2
Zero
GND
Optional
2
Y
VDD
NC
NC
NC
MCP1703
OUT 1
NC 2
SDM03U40
R5
NC7SZ00L6X
GND
B
5
6
7
U3
IN
R14
R1
10k
U1
A
C10
1uF, 25V
8
GND
9
2
3
P1
Optional
C4
1uF, 25V
3
D1
2
7.5
SDM03U40
R4
C11
1uF, 25V
C17
100pF
C16
100pF
VCC
LM5113TM
U2
4
4
Zero
R24
SW OUT
J7
CON4
CON1
TP3
1
C21
C22 C23
4.7uF, 50V
J6
CON4
J8
CON4
TP1
Keystone 5015
D3
Optional
J4
CON4
Q2
EPC2015
J3
CON4
Q1
EPC2015
J5
CON4
GND
Rev 5.0
28V Max
6
5
6
40V Half-Bridge with Gate Drive, using EPC2015
0.1uF, 25V
C19
Zero
Zero
Zero
R20
R23
R19
0.1uF, 25V
C9
VCC
TP2
Keystone 5015
5
1
1
1
1
2
3
4
4
3
2
1
1
2
3
4
4
3
2
1
1
2
3
4
4
3
2
1
D
C
B
A
For More Information:
Please contact info@epc-co.com
or your local sales representative
Visit our website:
www.epc-co.com
Sign-up to receive
EPC updates at
bit.ly/EPCupdates
or text “EPC” to 22828
EPC Products are distributed through Digi-Key.
www.digikey.com
Development Board / Demonstration Board Notification
The EPC9001 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not
designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations.
As board builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are
not RoHS compliant. Efficient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant.
No Licenses are implied or granted under any patent right or other intellectual property whatsoever. EPC assumes no liability for applications
assistance, customer product design, software performance, or infringement of patents or any other intellectual property rights of any kind.
EPC reserves the right at any time, without notice, to change said circuitry and specifications.
