Development Board
EPC9001C
Quick Start Guide
40 V Half-Bridge with Gate Drive, Using EPC2015C
QUICK START GUIDE
EPC9001C
DESCRIPTION
www.epc-co.com
The EPC9001C development board is a 40 V maximum device
voltage, 15 A maximum output current, half bridge with onboard
gate drives, featuring the EPC2015C enhancement mode (eGaN®)
field effect transistor (FET). The purpose of this development
board is to simplify the evaluation process of the EPC2015C eGaN
FET by including all the critical components on a single board that
can be easily connected into any existing converter.
The EPC9001C development board is 2” x 1.5” and contains
two EPC2015Cs eGaN FET in a half bridge configuration using
Texas Instruments LM5113 gate driver, supply and bypass capacitors.
The board contains all critical components and layout for optimal
switching performance. There are also various probe points to
facilitate simple waveform measurement and efficiency calculation. A
complete block diagram of the circuit is given in Figure 1.
For more information on the EPC2015Cs eGaN FET please refer to
the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.
Table 1: Performance Summary (TA = 25°C)
SYMBOL PARAMETER
MIN
MAX
UNITS
7
12
V
Bus Input Voltage Range
28*
V
VOUT
Switch Node Output Voltage
40
V
IOUT
Switch Node Output Current
VDD
Gate Drive Input Supply Range
VIN
VPWM
PWM Logic Input Voltage Threshold
CONDITIONS
15*
A
Input ‘High’
3.5
6
V
Input ‘Low’
0
1.5
V
Minimum ‘High’ State Input Pulse Width
VPWM rise and fall time < 10ns
60
ns
Minimum ‘Low’ State Input Pulse Width
VPWM rise and fall time < 10ns
200#
ns
* Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermals.
# Limited by time needed to ‘refresh’ high side bootstrap supply voltage.
Quick Start Procedure
Development board EPC9001C is easy to set up to evaluate the performance of the EPC2015C eGaN FET. Refer to Figure 2. for proper
connect and measurement setup and follow the procedure below:
1.
2.
3.
4.
5.
6.
7.
8.
9.
With power off, connect the input power supply bus to +VIN (J5, J6) and ground / return to –VIN (J7, J8).
With power off, connect the switch node of the half bridge OUT (J3, J4) to your circuit as required.
With power off, connect the gate drive supply to +VDD (J1, Pin-1) and ground return to –VDD (J1, Pin-2).
With power off, connect the input PWM control signal to PWM (J2, Pin-1) and ground return to any of the remaining J2 pins.
Turn on the gate drive supply – make sure the supply is between 7 V and 12 V range.
Turn on the bus voltage to the required value (do not exceed the absolute maximum voltage of 100 V on VOUT).
Turn on the controller / PWM input source and probe switching node to see switching operation.
Once operational, adjust the bus voltage and load PWM control within the operating range and observe the output switching behavior,
efficiency and other parameters.
For shutdown, please follow steps in reverse.
NOTE. When measuring the high frequency content switch node (OUT), care must be taken to avoid long ground leads. Measure the switch node (OUT) by placing the
oscilloscope probe tip through the large via on the switch node (designed for this purpose) and grounding the probe directly across the GND terminals provided. See
Figure 3 for proper scope probe technique.
THERMAL CONSIDERATIONS
The EPC9001C development board showcases the EPC2015C eGaN FET. Although the electrical performance surpasses that for traditional silicon
devices, their relatively smaller size does magnify the thermal management requirements. The EPC9001C is intended for bench evaluation with low
ambient temperature and convection cooling. The addition of heat-sinking and forced air cooling can significantly increase the current rating of
these devices, but care must be taken to not exceed the absolute maximum die temperature of 150°C.
NOTE. The EPC2015C development board does not have any current or thermal protection on board.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 |
| PAGE 2
QUICK START GUIDE
EPC9001C
7 V – 12 V
VDD
Gate Drive
Regulator
PWM
Input
Logic and
Dead-time
Adjust
Gate Drive
Supply
EPC9001C, 40 V DEVELOPMENT BOARD
Rev. 5.0
–
+
Gate Drive Supply
(Note Polarity)
VIN
LM5113
Gate
Driver
eGaN® FET © EPC 2013
VDD Supply
Half-Bridge with Bypass
OUT
A
IIN
+
VIN V
–
(For Efficiency
Measurement)
Figure 1: Block Diagram of EPC9001C Development Board
+
Switch Node
< 70 V
VIN Supply
–
External Circuit
PWM Input
EPC
EFFICIENT POWER CONVERSION
Figure 2: Proper Connection and Measurement Setup
EPC9001C,
40V DEVELOPMENT BOARD
Rev. 5.0
eGaN® FET © EPC 2013
Do not use probe ground lead
Ground probe
against TP3
EPC
Figure 4: Typical Waveforms for VIN = 24 V to 1.2 V/15 A (500 kHz) Buck converter
CH1: VPWM Input voltage – CH3: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage
EFFICIENT POWER CONVERSION
Minimize loop
Place probe in large via at OUT
Figure 3: Proper Measurement of Switch Node – OUT
Table 2 : Bill of Material
Item
Qty
Reference
Part Description
Manufacturer / Part #
1
2
3
C4, C10, C11,
Capacitor, 1 µF, 10%, 25 V, X5R
Murata, GRM188R61E105KA12D
2
C16, C17
Capacitor, 100 pF, 5%, 50 V, NP0
Kemet, C0402C101K5GACTU
3
2
C9, C19
Capacitor, 0.1 µF, 10%, 25 V, X5R
TDK, C1005X5R1E104K
4
3
C21, C22, C23
Capacitor, 4.7 µF, 10%, 50 V, X5R
TDK, C2012X5R1H475K125AB
5
2
D1, D2
Schottky Diode, 30 V
Diodes Inc., SDM03U40-7
6
3
J1, J2, J9
Connector
2pins of Tyco, 4-103185-0
7
1
J3, J4, J5, J6, J7, J8
Connector
FCI, 68602-224HLF
8
2
Q1, Q2
eGaN® FET
EPC, EPC2015C
9
1
R1
Resistor, 10.0 K, 5%, 1/8 W
Stackpole, RMCF0603FT10K0
10
2
R2, R15
Resistor, 0 Ohm, 1/8 W
Stackpole, RMCF0603ZT0R00
11
1
R4
Resistor, 7.5 Ohm, 1%, 1/8 W
Stackpole, RMCF0603FT7R50
12
1
R5
Resistor, 47 Ohm, 1%, 1/8 W
Stackpole, RMCF0603FT47R0
13
6
R19, R20, R21, R22, R23, R24
Resistor, 0 Ohm, 1/16 W
Stackpole, RMCF0402ZT0R00
14
2
TP1, TP2
Test Point
Keystone Elect, 5015
15
1
TP3
Connector
1/40th of Tyco, 4-103185-0
16
1
U1
I.C., Logic
Fairchild, NC7SZ00L6X
17
1
U2
I.C., Gate driver
Texas Instruments, LM5113TME
18
1
U3
I.C., Regulator
Microchip, MCP1703T-5002E/MC
19
1
U4
I.C., Logic
Fairchild, NC7SZ08L6X
20
0
R14
Optional Resistor
21
0
D3
Optional Diode
22
0
P1, P2
Optional Potentiometer
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 |
| PAGE 3
1
2
CON2
J9
1
2
CON2
J2
PWM2
CON2
R15
Zero
PWM1
R14
Optional
R1
10k
5
6
NC7SZ00L6X
GND
B
U1
A
C10
1 µF, 25 V
7
8
Y
VDD
NC
NC
NC
U3
IN
GND
9
1
2
R2
Zero
GND
NC
4
3
MCP1703
OUT 1
NC 2
P2
Optional
NC7SZ08L6X
GND
B
U4
A
D2
2
Y
VDD
47.0
SDM03U40
R5
P1
Optional
C4
1 µF, 25 V
7.5
C16
100 pF
SDM03U40
R4
D1
2
C11
1 µF, 25 V
VCC
C17
100 pF
LM5113TM
U2
Zero
R24
0.1 µF, 25 V
C19
Zero
Zero
Zero
R20
R23
R19
0.1 µF, 25 V
C9
VCC
TP2
Keystone 5015
SW OUT
J5
CON4
J7
CON4
CON1
TP3 (Optional)
1
C21
C22
C23
4.7 µF, 50 V
J6
CON4
GND
70V Max
Development Board EPC9001C Schematic
Rev 5.0
J8
CON4
TP1
Keystone 5015
D3
Optional
J4
CON4
Q2
EPC2015C
J3
CON4
Q1
EPC2015C
1
1
J1
1
2
3
4
4
3
2
1
1
2
3
4
4
3
2
1
1
2
3
4
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 |
4
3
2
1
7 - 12 Vdc
QUICK START GUIDE
EPC9001C
| PAGE 4
For More Information:
Please contact info@epc-co.com
or your local sales representative
Visit our website:
www.epc-co.com
Sign-up to receive
EPC updates at
bit.ly/EPCupdates
or text “EPC” to 22828
EPC Products are distributed through Digi-Key.
www.digikey.com
Demonstration Board Notification
The EPC9001C boards are intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not designed for compliance with the European
Union directive on electromagnetic compatibility or any other such directives or regulations. As board builds are at times subject to product availability, it is possible that boards may contain
components or assembly materials that are not RoHS compliant. Efficient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant. No
Licenses are implied or granted under any patent right or other intellectual property whatsoever. EPC assumes no liability for applications assistance, customer product design, software
performance, or infringement of patents or any other intellectual property rights of any kind.
EPC reserves the right at any time, without notice, to change said circuitry and specifications.