EPC9003C

EPC9003C

  • 厂商:

    EPC(宜普电源)

  • 封装:

    -

  • 描述:

  • 数据手册
  • 价格&库存
EPC9003C 数据手册
Development Board EPC9003C Quick Start Guide 200 V Half-bridge with Gate Drive, Using EPC2010C Revision 4.1 QUICK START GUIDE EPC9003C DESCRIPTION The EPC9003C development board is a 200 V maximum device voltage, 22 A maximum output current, half bridge with onboard gate drives, featuring the EPC2010C GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2010C by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies. The EPC9003C development board measures 2” x 2” and contains two EPC2010C GaN FETs in a half bridge configuration with the On-Semi NCP51820 gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure 1. For more information on EPC2010C please refer to the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide. Front view Table 1: Performance Summary (TA = 25°C) EPC9003C Symbol Parameter VDD Gate Drive Input Supply Range Conditions 10 IOUT Bus Input Voltage Range(1) Switch Node Output Current (2) VPWM PWM Logic Input Voltage Threshold (3) VIN Min Nominal Max Units Minimum ‘High’ State Input Pulse Width Minimum ‘Low’ State Input Pulse Width (4) 12 V 160 Input ‘High’ 3.5 Input ‘Low’ 0 VPWM rise and 50 fall time < 10ns VPWM rise and 200 fall time < 10ns 5 A 5.5 1.5 V ns (1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 200 V for EPC2010C. (2) Maximum current depends on die temperature – actual maximum current is affected by switching frequency, bus voltage and thermal cooling. (3) When using the on board logic buffers, refer to the NCP51820 datasheet when bypassing the logic buffers. (4) Limited by time needed to ‘refresh’ high side bootstrap supply voltage. EPC9003C development board Back view DBTST VDD Q1 Gate drive regulator LDO EN PWM LDO Logic and dead-time adjust Hin Lin DT Logic GND VIN CBypass LDO L1 Level shift DC Output Q2 LDO Level shift Cout PGND Gate driver Figure 1: Block diagram of EPC9003C development board EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 2 QUICK START GUIDE EPC9003C QUICK START PROCEDURE The EPC9003C development board is easy to set up as a buck or boost converter to evaluate the performance of two EPC2010C eGaN FETs. In addition to the deadtime features of the NCP51820 gate driver, this board includes a dead-time generating circuit that adds a delay from when the gate signal of one FET is commanded to turn off, to when the gate signal of the other FET is commanded to turn on. In the default configuration, the NCP51820 gate driver is set mode D (no-dead time, no-cross conduction protection - refer to datasheet for NCP51820) and the on-board dead time circuit provides the necessary dead time and ensures that both the high and low side FETS will not be turned on at the same time thus preventing a shoot through condition. Single input Dual input Dual-mode dead time settings Top-side Bottom-side Enable PWM1 (a) PWM2 (b) (c) Figure 2: Input mode selection on J630 Single/dual PWM signal input settings Note: In dual mode there is no shoot-through protection as both gate signals can be set high at the same time. 2. The NCP51820 has an on-chip deadtime generator with several modes of operation. The EPC9003C disables the on-chip deadtime to maximize end user flexibility, but it makes the on-chip deadtime modes accessible through P1, R11, and R12. Refer to the NCP51820 datasheet for details on setting the dead time using P1, R11 and R12. Output Capacitor Buck Inductor EPC9003C Rev. 4.1 VDD supply (Note polarity) VMain supply (Note polarity) + To select dual input mode, the zero-ohm resistor in position R5 needs to be removed and installed in position R6 as shown in figure 2(b). 12 VDC + PWM1 and PWM2. Both input ports are used as inputs in dual-input mode where PWM1 connects to the upper FET and PWM2 connects to the lower FET. The PWM1 input port is used as the input in single-input mode where the circuit will generate the required complementary PWM with preset dead time for the FETs as shown in figure 2(a). This is the default configuration. 160 VDCmax PWM1 (default) + Switch-node output Buck converter configuration DC load To operate the board as a buck converter, either a single or dual PWM input can be chosen. Figure 3(a) shows the connection setup for single PWM input mode and figure 3(b) for the dual PWM input mode. (a) 12 VDC Note: It is important to provide the correct PWM signals that includes dead-time and polarity when operating in dual PWM input mode and not making use of the gate driver dead time function. + Once the input source and dead-time settings have be chosen and set, then the board can be operated. Output Capacitor Buck Inductor EPC9003C Rev. 4.1 VDD supply (Note polarity) VMain supply (Note polarity) 2. With power off, connect the switch node (SW) of the half bridge to your circuit as required (half bridge configuration). Or use the provided pads for inductor (L1) and output capacitors (Cout), as shown in figure 3. 3. With power off, connect the gate drive supply to VDD (J1, Pin-1) and ground return to GND (J1, Pin-2 indicated on the bottom side of the board). 4. With power off, connect the input PWM control signal to PWM1 and/or PWM2 according to the input mode setting chosen and ground return to any of GND J10 pins indicated on the bottom side of the board. 5. Turn on the gate drive supply – make sure the supply is at least 10 V but does not exceed 12 V. 6. Turn on the controller / PWM input source. 7. Making sure the initial input supply voltage is 0 V, turn on the power and slowly increase the voltage to the required value (do not exceed the absolute maximum voltage). Probe switching node to see switching operation. + 1. With power off, connect the input power supply bus to VIN and ground/ return to GND. 160 VDCmax PWM1 Upper FET PWM2 Lower FET + + DC load (b) Figure 3: (a) Single-PWM input buck converter (b) Dual-PWM input buck converter configurations showing the supply, output capacitor, inductor, PWM, and load connections. 8. Once operational, adjust the PWM control, bus voltage, and load within the operating range and observe the output switching behavior, efficiency, and other parameters. 9. For shutdown, please follow steps in reverse. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 3 QUICK START GUIDE EPC9003C Boost Converter configuration To operate the board as a boost converter, either a single or dual PWM input can be chosen. Figure 4(a) shows the connection setup for single PWM input mode and figure 4(b) for the dual PWM input mode. 12 VDC + Warning: Never operate the boost converter mode without a load as the output voltage can increase beyond the maximum ratings. Input Capacitor Boost Inductor EPC9003C Rev. 4.1 VDD supply (Note polarity) Notes: DC load 160 VDCmax 1. It is important to provide the correct PWM signals that includes dead-time and polarity when operating in dual PWM input mode and not making use of the gate driver dead time function. PWM1 + + 2. Boost mode PWM converters are theoretically capable of generating arbitrarily high voltages, limited only by losses and component ratings. Review the operation of boost mode converters and make sure to avoid combinations of duty cycle and load that will generate higher voltages than the voltage rating of the development board and attached components. VMain supply (Note polarity) (a) Once the input source, dead-time settings and bypass configurations have be chosen and set then the boards can be operated. 2. With power off, connect the input power supply bus to VOUT and ground / return to GND, or externally across the capacitor if the inductor L1 and Cout are provided externally. Connect the output voltage (labeled as VIN) to your circuit as required, e.g., resistive load. 12 VDC + 1. The inductor (L1) and input capacitors (labeled as Cout) can either be soldered onto the board, as shown in figure 4, or provided off board. Input Capacitor Boost Inductor EPC9003C Rev. 4.1 VDD supply (Note polarity) DC load 160 VDCmax 3. With power off, connect the gate drive supply to VDD (J1, Pin-1) and ground return to GND (J1, Pin-2 indicated on the bottom side of the board). 5. Turn on the gate drive supply – make sure the supply is at least 10 V but does not exceed 12 V. PWM1 Upper FET PWM2 Lower FET + + + 4. With power off, connect the input PWM control signal to PWM1 and/or PWM2 according to the input mode setting chosen and ground return to any of GND J10 pins indicated on the bottom side of the board. VMain supply (Note polarity) 6. Turn on the controller / PWM input source. 7. Making sure the output is not open circuit, and the input supply voltage is initially 0 V, turn on the power and slowly increase the voltage to the required value (do not exceed the absolute maximum voltage). Probe switching node to see switching operation. (b) Figure 4: (a) Single-PWM input boost converter (b) Dual-PWM input boost converter configurations showing the supply, inductor, input capacitor, PWM, and load connections. 8. Once operational, adjust the PWM control, bus voltage, and load within the operating range and observe the output switching behavior, efficiency, and other parameters. Observe device temperature for operational limits. 9. For shutdown, please follow steps in reverse. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 4 QUICK START GUIDE EPC9003C MEASUREMENT CONSIDERATIONS +V Measurement connections are shown in figure 5. Figure 6 shows an actual switch-node voltage measurement when operating the board as a buck converter. When measuring the switch node voltage containing high-frequency content, care must be taken to provide an accurate high-speed measurement. An optional two pin header (J5) and an MMCX connector (J6) are provided for switch-node measurement. A differential probe is recommended for measuring the high-side bootstrap voltage. IsoVu probes from Tektronix has mating MMCX connector. For regular passive voltage probes (e.g. TPP1000) measuring switch node using MMCX connector, probe adaptor is available. PN: 206-0663-xx. EPC9003C HIGH VOLTAGE Rev. 4.1 Upper FET Gate Voltage MMCX (HIGH VOLTAGE!) Voltage measurement: Input voltage for Buck, Output voltage for Boost (HIGH VOLTAGE!) HIGH VOLTAGE Lower FET Gate Voltage HIGH VOLTAGE Voltage measurement: Input voltage for Boost, Output voltage for Buck (HIGH VOLTAGE!) V + Switch-node oscilloscope probe Ground oscilloscope probe (a) PCB#: B5217 NOTE. For information about measurement techniques, the EPC website offers: “AN023 Accurately Measuring High Speed GaN Transistors” and the How to GaN educational video series, including: HTG09- Measurement HIGH VOLTAGE Switch-node oscilloscope probe (HIGH VOLTAGE!) Rev. 4.1 Ground oscilloscope probe THERMAL CONSIDERATIONS Switch-node MMCX (HIGH VOLTAGE!) The EPC9003C is intended for bench evaluation with low ambient temperature and convection cooling. The addition of a heat-spreader or heatsink and forced air cooling can significantly increase the current rating of these devices, but care must be taken to not exceed the absolute maximum die temperature of 150°C. HIGH VOLTAGE (b) NOTE. The EPC9003C development board does not have any current or thermal protection on board. For more information regarding the thermal performance of EPC eGaN FETs, please consult: D. Reusch and J. Glaser, DC-DC Converter Handbook, a supplement to GaN Transistors for Efficient Power Conversion, First Edition, Power Conversion Publications, 2015. Figure 5 Measurement points (a) front side, (b) Back side 30 V/div 5 ns/div tf = 7.5 ns 10%–90% fall time tr = 2.4 ns 10%–90% rise time Waveform 8 A, VIN = 160 V, VOUT = 28 V, L = 200 kHz Figure 6: Typical switch-node waveform when operated as a buck converter EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 5 QUICK START GUIDE EPC9003C Table 2: Bill of Materials Item Qty Reference Part Description Manufacturer Part Number 1 9 C1, C2, C3, C4, C5, C6, C7, C8, C9 0.33 μF 250 V TDK CGA6M3X7T2E334K200AA 2 4 C10, C11, C12, C13 0.1 μF 250 V TDK C2012X7T2E104K125AA 3 4 C14, C16, C23, C24 1 μF 25 V TDK C1608X7R1E105K080AB 4 1 C15 4.7 μF 25 V TDK C1608X5R1E475K080AC 5 2 C17, C25 0.1 μF 25 V TDK C1608X7R1E104K080AA 6 2 C18, C26 0.1 μF 25 V TDK C1005X7R1E104K050BB 7 2 C19, C20 100 pF 50 V Yageo CC0402KRX7R9BB101 8 1 C21 0.47 μF 25 V TDK C2005X5R1E474K050BB 9 1 C22 15 pF 50 V TDK CGA2B2C0G1H150J050BA 10 2 Q1, Q2 200 V 25 mΩ GaN FET EPC EPC2010C 11 2 R5, R15 300 Ω Yageo RC0603FR-07300RL 12 2 R8, R9 10 k Yageo RC0603JR-0710KL 13 4 R3, R4, R7, R10 4.7 Ω Stackpole RMCF0402FT4R70 14 1 R12 10 k Yageo RC0603JR-0710KL 15 1 R13 2Ω Stackpole RMCF0402JT2R00 16 1 R14 1Ω ROHM MCR01MRT1JR0 17 1 R20 10 k Panasonic ERJ-2RKF1002X 18 5 TP1, TP2, TP3, TP5, TP6 SMD probe loop Keystone 5015 5015 19 1 D1 600 V 200 mA Rohm RFU02VSM6STR 20 2 D5, D15 40 V 30 mA Diodes Inc. SDM03U40-7 21 1 U1 600 V HB GaN FET gate driver On Semiconductor NCP51820AMNTWG 22 1 U2 2 input AND, TinyLogic, 1.65 V-5.5 V, +-32 mA Fairchild NC7SZ08L6X 23 1 U3 2 input NAND, TinyLogic, 1.65 V-5.5 V, +-32 mA Fairchild NC7SZ00L6X 24 1 J1 2x1 0.1 male vertical through hole Wurth 61300211121 25 1 J7 2x12 0.1 male vertical through hole Tyco 4-103185-0-04 26 1 J10 4x1 0.1 male vertical through hole TE Connectivity 4-103185-0-04 Reference Part Description Manufacturer Part Number Optional Components Item Qty 1 2 R1, R2 0Ω Stackpole RMC0402ZT0R00 2 3 4 5 6 7 8 9 1 1 1 3 1 1 1 1 R6 Cout1 EN1 J3, J4, J6 J12 L1 P1 R11 0Ω Cout_generic 0.1 male vertical 1 position 0.1 pitch MMCX Jack Vertical SMT 50 Ω 7.62 mm Euro Term GenericOutputInductor 250 k R0603-TBD Stackpole TBD Wurth Molex Wurth TBD Bourns TBD RMCF0603ZT0R00 TBD 61300111121 734152063 691216410002 TBD PV37W254C01B00 TBD EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 6 QUICK START GUIDE 9 VDC - 12 VDC C1 0.33 μF, 250 V V DD 2 1 i Net C lass J1 C15 4.7 μF, 25 V T P1 C10 0.1 μF, 250 V C14 1 μF, 25 V Keystone 5015 2 1 V G2 R2 MMCX V SW 1 2 0Ω E MPT Y E MPT Y MMCX vGS2 probe adapter J5 2 1 E MPT Y vSW probe adapter MMCX V SW J6 Net C lass i ClassName: HighVoltageGate 1 2 C16 E MPT Y T P2 Keystone 5015 R 13 vSW probe holes 1 μF, 25 V C17 2Ω 5V Y B R8 10 k 5V 1 R 15 300 Ω 1% C19 100 pF, 50 V PWM2 U3 NC7SZ 00L 6X CON4 C26 0.1 μF, 25 V A R5 B 300 Ω D5 40 V 30 mA SD M03U40 PWM2 R9 10 k R6 13 15 pF, 50 V 12 D15 40 V 30 mA SD M03U40 11 C20 100 pF, 50 V PWM1 10 k C22 10 V DD R 12 9 10 k EN 15 A VBST U2 NC7SZ 08L 6X C21 14 PWM1 HIGH VOLTAGE 600 V, 200 mA R 20 V DD PWM1 HI N 1 2 3 0.47 μF, 25 V C23 R3 P1 250 k EMPTY V SW R7 4.7 Ω 8 C25 0.1 μF, 25 V T P5 K eystone 5015 i Net C lass V G2 5V L1 ClassName: HighVoltage Q2 E PC2010C R 10 U1 NCP51820AMNT WG CW HOT SURFACE SW Output 4.7 Ω 6 7 DT J7B ATTENTION R4 5 SGND Q1 E PC2010C 4.7 Ω 1 μF, 25 V 4 LIN V G1 4.7 Ω 1Ω C24 1 μF, 25 V HIGH VOLTAGE T P3 Keystone 5015 V OUT TBD E MPT Y V OUT V OUT T P6 Keystone 5015 Sync Buck Output 1 2 Cout1 TBD E MPT Y R 14 R 11 EMPTY VIN D1 0.1 μF, 25 V E N1 EMPTY SIP1 C18 0.1 μF, 25 V Main Supply Input J7A 1 2 3 4 5 6 7 8 1 2 J4 9 10 11 12 13 14 15 16 E MPT Y J3 vGS1 probe adapter 1 2 3 4 C13 ClassName: HighVoltage 0.1 μF, 250 V C12 0.1 μF, 250 V J7C J12 E MPT Y 7.62 mm Euro Term 17 18 19 20 21 22 23 24 EMPTY R1 0 Ω E MPT Y J10 C11 0.1 μF, 250 V J2 Net C lass i ClassName: HighVoltageGate V G1 V SW C2 C3 C4 C5 C6 C7 C8 C9 0.33 μF, 250 V 0.33 μF, 250 V 0.33 μF, 250 V 0.33 μF, 250 V 0.33 μF, 250 V 0.33 μF, 250 V 0.33 μF, 250 V 0.33 μF, 250 V GND Mode D (default) 0Ω E MPT Y FD 1 FD 2 FD 3 PCB Fi ducial Figure 7: EPC9003C main schematic ATTENTION ELECTROSTATIC SENSITIVE DEVICE EPC9003C EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | VIN | 7 For More Information: Please contact info@epc-co.com or your local sales representative Visit our website: www.epc-co.com Sign-up to receive EPC updates at bit.ly/EPCupdates or text “EPC” to 22828 EPC Products are distributed through Digi-Key. www.digikey.com Demonstration Board Notification The EPC9003C board is intended for product evaluation purposes only. It is not intended for commercial use nor is it FCC approved for resale. Replace components on the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions. This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk. As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Efficient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant. The Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express or implied, as to the applications or products involved. Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the rights of others.
EPC9003C 价格&库存

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