Development Board
EPC9032
Quick Start Guide
40 V Half-bridge with Gate Drive, Using EPC2024
Revision 2.0
QUICK START GUIDE
EPC9032
DESCRIPTION
Table 1: Performance Summary (TA = 25°C) EPC9032
The EPC9032 development board is a 40 V maximum device voltage, 40 A
maximum output current, half bridge with onboard gate drives, featuring
the EPC2024 enhancement mode (eGaN®) field effect transistor (FET).
The purpose of this development board is to simplify the evaluation
process of the EPC2024 eGaN FET by including all the critical components
on a single board that can be easily connected into the majority of
existing converter topologies.
Symbol
Parameter
VDD
Gate Drive Input Supply Range
VIN
Bus Input Voltage Range(1)
IOUT
Switch Node Output Current (2)
VPWM
PWM Logic Input Voltage
Threshold
VSW
Switch-node Voltage
The EPC9032 development board measures 2” x 2” and contains two
EPC2024 eGaN FETs in a half bridge configuration using the Texas
Instruments LMG1205 gate driver. The board also contains all critical
components and the layout supports optimal switching performance.
There are also various probe points to facilitate simple waveform
measurement and efficiency calculation. A block diagram of the circuit
is given in figure 1.
Conditions
Input ‘High’
Input ‘Low’
Min
Max
Units
7
12
V
32(1)
V
40(2)
A
6
1.5
V
V
3.5
0
32(1)
Minimum ‘High’ State Input
Pulse Width
VPWM rise and fall
time < 10ns
Minimum ‘Low’ State Input
Pulse Width (3)
VPWM rise and fall
100(3)
time < 10ns
50
ns
ns
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing
must be kept under 40 V for EPC2024.
(2) Maximum current depends on die temperature – actual maximum current with be
subject to switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.
For more information on the EPC2024 please refer to the datasheet
available from EPC at www.epc-co.com. The datasheet should be read in
conjunction with this quick start guide.
QUICK START PROCEDURE
The half bridge development board EPC9032 is easy to set up as buck or
boost converter. Refer to figure 2 for buck converter configuration and
measurement setup, and figure 3 for boost converter setup, and follow the
procedure below:
Buck converter configuration
1. With power off, connect the input power supply bus to VIN (J5, J6) and
ground / return to GND.
2. With power off, connect the switch node (SW) of the half bridge to your
circuit as required (half bridge configuration). Or use the provided pads
for inductor (L1) and output capacitors (Cout), as shown in figure 2 with a
DC load connected across VOUT and GND.
3. With power off, connect the gate drive supply to VDD (J1, Pin-1) and
ground return to GND (J1, Pin-2 indicated on the bottom side of the
board).
Front view
4. With power off, connect the input PWM control signal to PWM1 (J2,
Pin-1) and ground return to any of GND J2 pins indicated on the bottom
side of the board.
5. Turn on the gate drive supply – make sure the supply is between 7.5 V
and 12 V.
6. Turn on the controller / PWM input source.
7. Making sure the intial input supply voltage is 0 V, turn on the power
and slowly increase the voltage to the required value (do not exceed
the absolute maximum voltage). Probe switching node to see switching
operation.
8. Once operational, adjust the PWM control, bus voltage, and load within
the operating range and observe the output switching behavior,
efficiency and other parameters.
9. For shutdown, please follow steps in reverse.
Back view
EPC9032 development board
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QUICK START GUIDE
EPC9032
Boost Converter configuration
3. With power off, connect the gate drive supply to VDD (J1,
Pin-1) and ground return to GND (J1, Pin-2 indicated on the
bottom side of the board).
4. With power off, connect the input PWM control signal to
PWM1 (J2, Pin-1) and ground return to any of GND J2 pins
indicated on the bottom side of the board. Note that the
bottom FET gate drive signal is inverted with regard to
PWM1. It is also possible to use separate input PWM signals
by removing R2 and R17 and installing 0 Ω jumpers for R14
and R16.
Q1
Logic and
dead-time
adjust
PWM
Output
CBypass
Q2
GND
PGND
Gate driver
Figure 1: Block diagram of EPC9032 development board
V
7.5 – 12 VDC
Main voltage measurement
(HIGH VOLTAGE!)
VDD supply
(Note polarity)
VMain supply
(Note polarity)
+
2. With power off, connect the input power supply bus to VOUT
(J9, Pin-1) and ground / return to GND (J9, Pin-2), or externally
across the capacitor if the inductor L1 and Cout are provided
externally. Connect the output voltage (labeled as VIN, J5, J6)
to your circuit as required, e.g., resistive load.
Gate drive
regulator
VDD
Level shift
1. The inductor (L1) and input capacitors (labeled as Cout) can
either be soldered onto the board, as shown in figure 3, or
provided off board. Anti-parallel diodes can also be installed
using the additional pads on the right side of the EPC2024
FETs.
+
Warning: Never operate the boost converter mode without a load
as the output voltage can increase beyond the maximum ratings.
VIN
5. Turn on the gate drive supply – make sure the supply is
between 7.5 V and 12 V.
7. Making sure the output is not open circuit, and the input
supply voltage is initially 0 V, turn on the power and slowly
increase the voltage to the required value (do not exceed
the absolute maximum voltage). Probe switching node to
see switching operation.
8. Once operational, adjust the PWM control, bus voltage, and
load within the operating range and observe the output
switching behavior, efficiency and other parameters.
Observe device temperature for operational limits.
9. For shutdown, please follow steps in reverse.
Dead-time adjust
Control
signal
inputs
Output Inductor
Output Capacitor
DC load
Figure 2: Buck configuration
7.5 – 12 VDC
Input Inductor
+
6. Turn on the controller / PWM input source.
32 VDCmax
VDD supply
(Note polarity)
DC load
32 VDCmax
Dead-time adjust
Input Capacitor
VMain supply
(Note polarity)
+
Control
signal
inputs
Figure 3: Boost configuration
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QUICK START GUIDE
EPC9032
THERMAL CONSIDERATIONS
The EPC9032 development board showcases the
EPC2024 eGaN FET. The EPC9032 is intended for
bench evaluation with low ambient temperature
and convection cooling. The addition of heat-sinking
and forced air cooling can significantly increase
the current rating of these devices, but care must
be taken to not exceed the absolute maximum die
temperature of 150° C.
NOTE. The EPC9032 development board does not have any
current or thermal protection on board. For more information
regarding the thermal performance of EPC eGaN FETs, please
consult:
D. Reusch and J. Glaser, DC-DC Converter Handbook, a
supplement to GaN Transistors for Efficient Power Conversion,
First Edition, Power Conversion Publications, 2015.
Voltage measurement:
Input voltage for Buck,
Output voltage for Boost
(HIGH VOLTAGE!)
Q1 gate MMCX
(HIGH VOLTAGE!)
Q2 gate MMCX
V
Switch-node
output
Switch-node oscilloscope probe
Ground oscilloscope probe
Q2 gate
Ground
MEASUREMENT CONSIDERATIONS
Figure 4: Measurement top side
When measuring the high frequency content switch
node, care must be taken to provide an accurate high
speed measurement. An optional two pin header
(J10) is included for switch node measurement.
MMCX connector footprint is also provided (J15 in
figure 5) to measure switch node.
Switch-node oscilloscope probe
Ground oscilloscope probe
Low-side gate voltage (VGS2) can be measured at the
two pin header (J22) or the MMCX (J12). Please refer
to figure 4. R7 (0 Ω resistor) will need to be installed.
High-side gate voltage (VGS1) can only be measured
using the MMCX connector (J11). Please refer to
figure 4. R6 (0 Ω resistor) will need to be installed.
Differential probe is recommended for measuring
high-side gate. IsoVu probes from Tektronix has
mating MMCX connector.
For regulator passive voltage probes (e.g. TPP1000)
measuring low-side gate or switch node using
MMCX connector, probe adaptor is available. PN:
206-0663-xx.
Switch-node MMCX
Figure 5: Measurement bottom side.
NOTE. For information about measurement techniques,
the EPC website offers: “AN023 Accurately Measuring
High Speed GaN Transistors” and the How to GaN
educational video series, including: HTG09- Measurement
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
| 4
QUICK START GUIDE
EPC9032
Table 2: Bill of Materials
Item
Qty
Reference
Part Description
Manufacturer
Part Number
1
3
C4, C10, C11
Capacitor, 1 µF, ±10%, 25 V X7R
TDK
C1608X7R1E105K
2
3
2
1
C5, C6
C9
Capacitor, 0.1 µF, ±10%, 25 V X7R
Capacitor, 0.1 µF, ±10%, 25 V X7R
TDK
Yageo
C1608X7R1E104K
CC0402KRX7R8BB104
4
2
C12, C14
Capacitor, 0.1 µF, ±10%, 16 V X7R
Murata
GRM155R71C104KA88D
5
1
C15
Capacitor, 0.022 µF, ±10%, 25 V X7R
TDK
C1005X7R1E223K050BB
6
2
C16, C17
Capacitor, 100 pF, ±10%, 50 V X7R
Yageo
CC0402KRX7R9BB101
7
1
Capacitor, 4.7 µF, ±10%, 10 V X5R
TDK
C1005X5R1A475K050BC
8
10
Capacitor, 1 µF, ±20%, 100 V X7S
TDK
C2012X7S2A105M125AB
9
7
Capacitor, 0.22 µF, ±10%, 100 V X7S
Taiyo Yuden
HMK107C7224
10
4
C20
C21, C22, C23, C24, C25,
C26, C34, C35, C36, C37
C27, C28, C29, C30,C31,
C32, C33
D1, D2, D5, D6
Schottky Diode, 30 V 30 mA
Diodes Inc.
SDM03U40
11
1
D4
Zener Diode, 5.1 V, 150 mW, ±5%
Bournes
CD0603-Z5V1
12
1
U2
100 V eGaN Driver
TI
LMG1205YFXR
13
2
Q1, Q2
eGaN FET, 40 V, 1.5 mΩ
EPC
EPC2024
14
1
Q3
eGaN FET, 100 V, 3300 mΩ
EPC
EPC2038
15
2
R1, R15
Resistor, 10 kΩ, ±5%, 1/10 W
Yageo
RC0603JR-0710KL
16
3
R2, R3, R17
Resistor, 0.0 Ω, 1/16 W
Stackpole
RMCF0603ZT0R00
17
1
R4
Resistor, 10 Ω, ±1%, 1/10 W
Stackpole
ERJ-3EKF10R0V
18
1
Resistor, 47 Ω, ±1% 0.1 W, 1/10 W
Stackpole
RMCF0603FT47R0
19
1
R5
R9
Resistor, 0 Ω Jumper 0.063 W, 1/16 W
Stackpole
RMCF0402ZT0R00
20
2
R19, R21
Resistor, 2.7 Ω, ±5% 0.1 W, 1/10 W
Panasonic
ERJ-2GEJ2R7X
21
2
R20, R22
Resistor, 500 mΩ, ±1% 0.125 W, 1/8 W
Stackpole
PT0402FR-7W0R5L
22
1
R24
Resistor, 27 kΩ, ±5% 0.1 W, 1/10 W
Panasonic
ERJ-2GEJ273X
23
1
R25
Resistor, 20 Ω, ±5% 0.063 W, 1/16 W
Stackpole
RMCF0402JT20R0
24
1
U3
I.C., Regulator
Microchip
MCP1703T-5002E/MC
25
1
U1
I.C., Logic
Fairchild
NC7SZ00L6X
26
1
U4
I.C., Logic
Fairchild
NC7SZ08L6X
27
2
J1, J22
Connector
Würth
61300211121
28
2
J2, J3
Connector
Tyco
4-103185-0-04
29
2
TP1, TP2
SMT test point
Keystone
5015
Optional Components
Item
Qty
Reference
Part Description
Manufacturer
Part Number
1
DNP
Cout
TBD
Generic
Generic
2
DNP
D3
Schottky Diode, 40 V 300 mA
ST
BAT54KFILM
3
DNP
D7, D8
Schottky Diode, 100 V 2A
Vishay
SS2PH10-M3
4
DNP
L1
Inductor - TBD
Generic
Generic
5
DNP
P1, P2
Potentiometer, 1 kΩ 0.25 W, 1/4 W
Murata
PV37W102C01B00
6
DNP
R10, R14, R16
Resistor, 0 Ω Jumper 0.1 W, 1/10 W
Stackpole
RMCF0603ZT0R00
7
DNP
R6, R7
Resistor, 0 Ω Jumper 0.063 W, 1/16 W
Stackpole
RMCF0402ZT0R00
8
DNP
R18
Resistor, 4.7 Ω, ±5% 0.1 W, 1/10 W
Panasonic
ERJ-2GEJ4R7X
9
DNP
J9
7.62 mm Euro Term.
Würth
691216410002
10
DNP
J10
.1" Male Vert.
Würth
61300211121
11
DNP
J11, J12, J15
Connector
Molex
0734152063
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| 5
VLDO
C4
1 μF, 25 V
C10
1 μF, 25 V
.1" Male Vert.
R3
C21
1 μF, 100 V
VCC
0Ω
Int. Regulator
C22
1 μF, 100 V
C23
1 μF, 100 V
U4
NC7SZ08L6X
PWM1
P1 EMPTY
D5
SDM03U40
40 V 30 mA
HIN
1
C14
C5
100 nF, 25 V
C15
100 nF, 16 V
R24
27 k
22 nF, 25V
VG1
VSW
2
R25
20 Ω
0Ω
EMPTY
PWM1
R2
0Ω
U2
2
P2 EMPTY
HIN
VSW
R20 0.5 Ω
LIN
D2
SDM03U40
PWM2
R14
2
R9
VG2
C20
4.7 μF, 10 V
R22 0.5 Ω
C16
100 pF, 50 V
C17
100 pF, 50 V
Q2
EPC2024
VG2
4.7 V
L1
PWM1
VG2
PWM2
R7
0Ω
EMPTY
J12
MMCX
vGS2 probe
adapter
Sync Buck Output
J9
1
2
EMPTY
7.62 mm Euro Term.
Cout
TBD
GND
J3C
TP1
1
2
EMPTY
VSW
J10
2
1
EMPTY
vSW probe holes
vSW probe adapter
MMCX
VSW
J15
1
2
EMPTY
EPC9032
Figure 6: EPC9032 - Schematic
VOUT
0Ω
2
1
.1" Male Vert.
J2
.1" Male Vert.
VOUT
D7
100 V, 2 A
SS2PH10-M3
EMPTY
J22
Direct Drive
VOUT
TBD
uP1966A
0Ω
EMPTY
SW Output
J3B
EMPTY
VCC
R21 2.7 Ω
C6
100 nF, 25 V
VSW
D3
40 V 300 mA
BAT54KFILM
EMPTY
4.7 V
VCC
Q1
EPC2024
VSW
VG1
LIN
D8
100 V, 2 A
SS2PH10-M3
EMPTY
VG1
2.7 Ω R19
B
R15
10 k
5VHS1
Deadtime Lower
2
C33
220 nF, 100 V
J3A
1
2
EMPTY
C9
0.1 μF, 25 V
TBD
1
A
U1
NC7SZ00L6X
C32
220 nF, 100 V
TP2
vGS1 probe adapter
VG2
R5
C31
220 nF, 100 V
J11
MMCX
D6
SDM03U40
40 V 30 mA
Direct Drive
VCC
C30
220 nF, 100 V
VIN
R6
0Ω
EMPTY
1
R16
C29
220 nF, 100 V
Main Supply Input
D1
SDM03U40
PWM2
C28
220 nF, 100 V
4.7 V
PWM1
C37
1 μF, 100 V
Synchronous Boostrap Power Supply
VCC
R1
10 k
C36
1 μF, 100 V
VSW
Deadtime Upper
2
C27
220 nF, 100 V
D4
CD0603-Z5V1
5V1, 150 mW
Gbtst
2
B
1
4.7 Ω
EMPTY
C12
100 nF, 16 V
TBD
R17
0Ω
A
C35
1 μF, 100 V
5VHS1
1
PWM1
C34
1 μF, 100 V
VIN
2 R18
VCC
R4
C26
1 μF, 100 V
C11
1 μF, 25 V
EPC2038
100 V 2800 mΩ
Q3
VCC
C25
1 μF, 100 V
C24
1 μF, 100 V
1
2
3
4
5
6
7
8
IN
9
10
11
12
13
14
15
16
V7in
VIN
VCC
17
18
19
20
21
22
23
24
V7in
GND
J1
R10
0Ω
EMPTY
U3
MCP1703T-5002E/MC
QUICK START GUIDE
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Ext. Regulator
V7in
Logic Supply Regulator
Logic Supply
7.5 VDC - 12 VDC
| 6
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Demonstration Board Notification
The EPC9032 board is intended for product evaluation purposes only. It is not intended for commercial use nor is it FCC approved for resale. Replace components on the
Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions. This board is
intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk.
As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board
builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Efficient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant.
The Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express
or implied, as to the applications or products involved.
Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the
rights of others.