Development Board
EPC9060/61
Quick Start Guide
Half-bridge with Gate Drive
for EPC2030/31
Revision 2.0
QUICK START GUIDE
EPC9060/61
DESCRIPTION
These development boards are in a half-bridge topology with onboard
gate drives, featuring the EPC2030/31 eGaN® field effect transistors
(FETs). The purpose of these development boards is to simplify the
evaluation process of these eGaN FETs by including all the critical
components on a single board that can be easily connected into any
existing converter.
For more information on the EPC2030 and EPC2031 eGaN FETs, please
refer to the datasheets available from EPC at www.epc-co.com. The
datasheet should be read in conjunction with this quick start guide.
The development board is 2” x 2” and contains two eGaN FETs in a
half-bridge configuration using the Texas Instruments LM5113 gate
driver, supply and bypass capacitors. The board contains all critical
components and layout for optimal switching performance and has
additional area to add buck output filter components on the board.
There are also various probe points to facilitate simple waveform
measurement and efficiency calculation. A complete block diagram of
the circuit is given in figure 1.
VDD
Gate drive
regulator
Gate drive supply
PWM
input
Logic and
dead-time
adjust
LM5113
gate
driver
Half bridge
with bypass
VIN
VSW
OUT
Pads for buck output filter
Figure 1: Block Diagram of Development Board
Table 1: Performance Summary (TA = 25 °C) EPC9060/61
Symbol
Parameter
VDD
Gate Drive Input Supply Range
VIN
Bus Input Voltage Range
VOUT
Switch Node Output Voltage
IOUT
Switch Node Output Current
VPWM
PWM Logic Input Voltage Threshold
Conditions
Min
Max
Units
7
12
V
When using 40 V devices, EPC9060
32(1)
V
When using 60 V devices, EPC9061
48(1)
V
When using 40 V devices, EPC9060
40
V
When using 60 V devices, EPC9061
60
V
When using 40 V devices, EPC9060
25(1)
A
When using 60 V devices, EPC9061
24(1)
A
Input ‘Low’
3.5
6
V
Input ‘High’
0
1.5
V
Minimum “High” State Input Pulse Width
VPWM rise and fall time < 10ns
50
ns
Minimum “Low” State Input Pulse Width
VPWM rise and fall time < 10ns
100(2)
ns
(1) Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject to switching frequency,
bus voltage and thermal cooling.
(2) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.
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QUICK START GUIDE
EPC9060/61
QUICK START PROCEDURE
The development boards are easy to set up to evaluate the performance
of the eGaN FET. Refer to figure 2 for proper connect and measurement
setup and follow the procedure below:
1. With power off, connect the input power supply bus to +VIN
(J5, J6) and ground / return to –VIN (J7, J8).
2. With power off, connect the switch node of the half-bridge OUT
(J3, J4) to your circuit as required.
3. With power off, connect the gate drive input to +VDD (J1, Pin-1)
and ground return to –VDD (J1, Pin-2).
7 V – 12 V
_
VDD Supply
+
Gate Drive Supply
(Note Polarity)
A
Pads for Buck
Output Filter
+
VIN
_
V
a. EPC9060, 40 V
b. EPC9061, 60 V
7. Turn on the controller / PWM input source and probe switching
node to see switching operation.
_
See table
for max
PGND
VOUT
PWM Input
6. Turn on the bus voltage to the required value (do not exceed the
absolute maximum voltage on VOUT as indicated in the table below:
+
VIN Supply
VSW
(For Efficiency
Measurement)
4. With power off, connect the input PWM control signal to PWM
(J2, Pin-1) and ground return to any of the remaining J2 pins.
5. Turn on the gate drive supply – make sure the supply is between
7 V and 12 V range.
IIN
+
V
_
VOUT
(For Efficiency
Measurement)
Figure 2: Proper Connection and Measurement Setup
8. Once operational, adjust the bus voltage and load PWM control
within the operating range and observe the output switching
behavior, efficiency and other parameters.
9. For shutdown, please follow steps in reverse.
NOTE. When measuring the high frequency content switch node (OUT), care must be
taken to avoid long ground leads. Measure the switch node (OUT) by placing the oscilloscope probe tip through the large via on the switch node (designed for this purpose)
and grounding the probe directly across the GND terminals provided. See figure 3 for
proper scope probe technique.
Do not use probe ground lead
Ground probe
against TP3
Minimize loop
Place probe tip in large via at OUT
Figure 3: Proper Measurement of Switch Node – OUT
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QUICK START GUIDE
EPC9060/61
THERMAL CONSIDERATIONS
The EPC9060/61 development boards showcase the EPC2030/31
eGaN FETs. Although the electrical performance surpasses that for
traditional Silicon devices, their relatively smaller size does magnify
the thermal management requirements. These development boards
are intended for bench evaluation with low ambient temperature and
convection cooling. The addition of heat-sinking and forced air cooling
Figure 4 (a) – Rising Edge
can significantly increase the current rating of these devices, but care
must be taken to not exceed the absolute maximum die temperature
of 150°C.
NOTE. The EPC9060/61 development boards do not have any current or thermal
protection on board.
Figure 4 (b) – Falling Edge
!
Typical Waveforms for VIN = 60 V to 5V/20 A (300 kHz) Buck converter CH1: (VPWM) Input logic signal – CH2: (IOUT) Output inductor current – CH4: (VOUT) Switch node voltage
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
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QUICK START GUIDE
EPC9060/61
Table 2 : Bill of Material
Item
Qty
1
2
3
3
2
1
Reference
Part Description
Manufacturer
Part Number
C4, C10, C11
C16, C17
C9
Capacitor, 1 µF, 10%, 25 V, X5R
Capacitor, 100 pF, 5%, 50 V, NP0
Capacitor, 0.1 µF, 10%, 25 V, X5R
Murata
Kemet
TDK
GRM188R61E105KA12D
C0402C101K5GACTU
C1005X5R1E104K
4
1
C19
Capacitor, 1 µF, 10%, 25 V, X5R
C1005X5R1E105K
5
4
C21, C22, C23, C24
Capacitor, - see Table 3
See Table 3
6
7
8
2
3
1
D1, D2
J1, J2, J9
J3, J4, J5, J6, J7, J8
Schottky Diode, 30 V
Connector
Connector
9
2
Q1, Q2
eGaN® FET - see Table 3
10
11
12
13
14
15
16
17
18
19
20
1
2
1
1
4
2
1
1
1
1
1
R1
R2, R15
R4
R5
R19, R20, R23, R24
TP1, TP2
TP3
U1
U2
U3
U4
Resistor, 10.0 k, 5%, 1/10 W
Resistor, 0 Ω, 1/8 W
Resistor, 47 Ω, 1%, 1/10 W
Resistor, 75 Ω, 1%, 1.10 W
Resistor, 0 Ω, 1/16 W
Test Point
Connector
I.C., Logic
I.C., Gate Driver
I.C., Regulator
I.C., Logic
21
0
R14
Optional Resistor
22
0
D3
Optional Diode
23
0
P1, P2
Optional Potentiometer
Diodes Inc.
FCI
FCI
SDM03U40-7
68001-236HLF
68602-224HLF
Panasonic
Stackpole
Stackpole
Stackpole
Stackpole
Keystone Elect
1/40th of Tyco
Fairchild
National
Microchip
Fairchild
ERJ-3GEY0R00V
RMCF0603ZT0R00
RMFC0603FT47R0
RMCF0603FT75R0
RMCF0402ZT0R00
5015
4-103185-0
NC7SZ00L6X
LM5113
MCP1703T-5002E/MC
NC7SZ08L6X
See Table 3
Table 3 : Variable BOM Components
Board Number
EPC9060
EPC9061
Item
Qty
5
9
5
9
4
2
4
2
Reference
Part Description
Manufacturer
Part Number
C21, C22, C23, C24
Q1, Q2
C21, C22, C23, C24
Q1, Q2
Capacitor, 4.7 µF, 50 V ±10%, X5R
eGaN® FET
Capacitor, 1 µF, 100 V ±10%, X7S
eGaN® FET
TDK
EPC
TDK
EPC
C2012X5R1H475K125AB
EPC2030
CGA4J3X7S2A105K125AE
EPC2031
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| 5
1
2
PWM2
CON2
1
2
CON2
J9
J2
CON2
R15
Zero
PWM1
Optional
R14
R1
10k
6
5
NC7SZ00L6X
GND
B
A
U1
C10
1µF, 25V
8
7
Y
VDD
NC
NC
NC
IN
U3
GND
9
1
2
R2
Zero
GND
NC
NC
OUT
MCP1703
1
4
3
2
P2
Optional
NC7SZ08L6X
GND
B
A
U4
75
SDM03U40
R5
D2
2
Y
VDD
P1
Optional
C4
1µF, 25V
C17
100pF
C16
100pF
LM5113TM
U2
Figure 5: Development Board Schematic
47
SDM03U40
R4
D1
2
C11
1µF, 25V
VCC
R24
0.1µF, 25V
C19
R20
R23
R19
0.1µF, 25V
C9
Zero
Zero
Zero
Zero
VCC
SW OUT
J5
CON4
J7
CON4
CON1
1
TP3
C21 C22
C23 C24
See Table
J6
CON4
J8
CON4
TP1
Keystone 5015
D3
Optional
J4
CON4
Q2
See Table
J3
CON4
Q1
See Table
TP2
Keystone 5015
1
1
J1
1
2
3
4
4
3
2
1
1
2
3
4
4
3
2
1
1
2
3
4
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
4
3
2
1
7 - 12 Vdc
GND
See Table
QUICK START GUIDE
EPC9060/61
| 6
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Demonstration Board Notification
The EPC9060/61 board is intended for product evaluation purposes only. It is not intended for commercial use nor is it FCC approved for resale. Replace components on
the Evaluation Board only with those parts shown on the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions. This board is
intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk.
As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board
builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Efficient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant.
The Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express
or implied, as to the applications or products involved.
Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the
rights of others.
