Development Board
EPC9067
Quick Start Guide
EPC8009
65 V Half Bridge with Sync FET Bootstrap Gate Drive
QUICK START GUIDE
Demonstration System EPC9067
DESCRIPTION
The EPC9067 development board is a 65 V maximum device voltage,
2.7 A maximum output current, half bridge with onboard gate drives,
featuring the EPC8009 enhancement mode (eGaN®) field effect transistor
(FET). The gate driver has been configured with a synchronous FET
bootstrap circuit featuring the EPC2038 eGaN FET that eliminates high
side device losses induced by the reverse recovery losses of the internal
bootstrap diode of the gate driver. The purpose of this development
board is to simplify the evaluation process of the EPC8009 eGaN FET by
including all the critical components on a single board that can be easily
connected into any existing converter. The inclusion of the synchronous
FET bootstrap circuit enables significant increase in operating frequency
capability of the half bridge circuit.
The EPC9067 development board is 2” x 1.5” and has two EPC8009 eGaN
FETs in a half bridge configuration using Texas Instruments LM5113 gate
driver with supply and bypass capacitors. The board contains all critical
components and layout for optimal switching performance. There are
also various probe points to facilitate simple waveform measurement
and efficiency calculation. The board includes pads for the inclusion of
customer components to facilitate testing in a Buck converter or ZVS
class-D amplifier configurations. A complete block diagram of the circuit
is given in figure 1.
Table 1: Performance Summary (TA = 25°C) EPC9067
Symbol
Parameter
VDD
Gate Drive Input Supply
Range
VIN
Conditions
Min
Max
Units
7.5
12
V
Bus Input Voltage Range
52*
V
VOUT
Switch Node Output Voltage
65
V
IOUT
Switch Node Output Current
2.7*
A
VPWM
PWM Logic Input Voltage
Threshold
Minimum ‘High’ State Input
Pulse Width
Minimum ‘Low’ State Input
Pulse Width
6
1.5
V
V
Input ‘High’
Input ‘Low’
VPWM rise and
fall time < 10ns
VPWM rise and
fall time < 10ns
3.5
0
40
ns
160#
ns
*Assumes inductive load, maximum current depends on die temperature – actual maximum current
with be subject to switching frequency, bus voltage and thermals.
# Limited by time needed to ‘refresh’ high side bootstrap supply voltage.
For more information on the EPC8009 and EPC2038 eGaN FETs please
refer to the datasheet available from EPC at www.epc-co.com. The
datasheet should be read in conjunction with this quick start guide.
QUICK START PROCEDURE
Development board EPC9067 is easy to set up to evaluate the performance
of the EPC8009 eGaN FET. Refer to figure 2 for proper connect and
measurement setup and follow the procedure below:
1. Configure the board for either ZVS class-D operation OR Buck converter
operation.
2. With power off, connect the input power supply bus to +VIN (J1) and
ground / return to –VIN (J4).
3. For ZVS class-D operation, with power off, connect a HF load to the HF
output (RF-J2 OR Vsw-J3 and GND-J4). For Buck converter operation,
with power off, connect a DC load to the DC output (+VOUT -J5 and
GND-J4).
4. With power off, connect the gate drive input to +VDD (J90, Pin-1) and
ground return to –VDD (J90, Pin-2).
5. With power off, connect the input PWM control signal to PWM (J70,
Pin-1) and ground return to either Pin-2 or Pin-4 of J70.
6. Turn on the gate drive supply – make sure the supply is within the
7.5 V and 12 V range.
7. Turn on the controller / PWM input source and probe switching node to
observe switching operation.
EPC9067 development board
8. Turn on the bus voltage to the required value (do not exceed the
absolute maximum voltage of 52 V on VOUT ). Increase voltage slowly
while monitoring operation to ensure the FETs are operating within
their datasheet parameters.
9. Once operational, adjust the bus voltage and load PWM control
within the operating range and observe the output switching
behavior, efficiency and other parameters.
10. For shutdown, please follow steps in reverse.
When measuring the high frequency content switch node, care
must be taken to avoid long ground leads. Measure the switch node by
placing the oscilloscope probe tip through the large via on the switch
node (designed for this purpose) and grounding the probe directly
across the GND terminal provided. See figure 3 for proper scope probe
technique.
NOTE.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
|2
QUICK START GUIDE
Demonstration System EPC9067
VIN
HF output
PWM
Gate drive
regulator
Logic and
dead-time
adjust
Q2
Level shift
VDD
L ZVS
DC output
L Buck
C OUT
C Bypass
Q1
C ZVS
GND
PGND
V
Figure 1: Block diagram of EPC9067 development board
7.5 – 12 VDC
+
VIN supply
(note polarity)
Main voltage
measurement
Switch-node
oscilloscope probe
Ground post
High frequency
connection
Dead-time
setting
(if installed)
SMA (optional)
52 VDCmax
+
VMain supply
(note polarity)
DC output
Control signal
inputs
V
DC output
measurement
Figure 2: Proper connection and measurement setup
Do not use
probe ground lead
Ground probe
against post
Place probe tip
in large via
Minimize loop
Figure 3: Proper measurement of the switch node
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
|3
QUICK START GUIDE
Demonstration System EPC9067
THERMAL CONSIDERATIONS
The EPC9067 development board showcases the EPC8009 eGaN FET.
Although the electrical performance surpasses that for traditional
Si devices, their relatively smaller size does magnify the thermal
management requirements. The EPC9067 is intended for bench
evaluation with low ambient temperature and convection cooling.
The addition of heat-sinking and forced air cooling can significantly
increase the current rating of these devices, but care must be taken to
not exceed the absolute maximum die temperature of 125°C.
NOTE. The EPC9067 development board does not have any current or thermal
protection on board.
Table 2: Bill of Materials - Amplifier Board
Item
Qty
Reference
Part Description
Manufacturer/Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
1
3
3
2
2
1
3
2
1
1
1
1
1
1
3
1
1
1
2
1
C40
C4, C5, C6
C95, C96, C97
C71, C72
C41, C44
C45
C1, C2, C3
C42, C43
R46
R70
R74
R75
R45
R44
D45, D74, D75
D40
D41
Q44
Q1, Q2
U95
Capacitors, Ceramic, 4.7 µF, 10 V, ±20%, X5R
Capacitors, Ceramic, 1.0 µF, 100 V, ±10%, X7S
Capacitors, Ceramic, 1.0 µF, 25 V, ±10%, X5R
Capacitors, Ceramic, 100 nF, 25 V, ±10%, X7R
Capacitors, Ceramic, 100 nF, 16 V, ±10%, X7R
Capacitors, Ceramic, 22 nF, 25 V, ±10%, X7R
Capacitors, Ceramic, 10 nF, 100 V, ±20%, X7S
Capacitors, Ceramic, 22 pF, 50 V, ±5%, NPO
Resistors, 27 KΩ, ±1%, 1/10 W
Resistors, 10.0 KΩ, ±1%, 1/10 W
Resistors, 191 Ω, ±1%, 1/10 W
Resistors, 56 Ω, ±1%, 1/10 W
Resistors, 20 Ω, ±1%, 1/16 W
Resistors, 4.7 Ω, ±1%, ±/16 W
Diodes, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA
Diodes, Schottky, 100 V, 0.2 A, VF=1 V @ 200 mA
Diodes, Zener, 5.1 V, 150 mW ±5%
eGaN® FET, 100 V, 500 mA, RDS(on) =2.1 Ω @ 50 mA, 5 V
eGaN® FET, 65 V, 4.1A, RDS(on) =138 mΩ @ 500 mA, 5 V
IC's, 5 V LDO, 250 mA, up to 16VIN, Vdropout=0.33 V @ 250 mA
Samsung, CL05A475MP5NRNC
TDK, C2012X7S2A105K125AB
Murata, GRM188R61E105KA12D
TDK, C1005X7R1E104K050BB
Murata, GRM155R71C104KA88D
TDK, C1005X7R1E223K050BB
TDK, C1005X7S2A103M050BB
TDK, C1005C0G1H220J050BA
Panasonic, ERJ-2RKF2702X
Panasonic, ERJ-6ENF1002V
Panasonic, ERJ-2RKF1910X
Panasonic, ERJ-2RKF56R0X
Stackpole, RMCF0402FT20R0
Yageo, RC0402FR-074R7L
Diodes Inc, SDM03U40-7
ST Microelectronics, BAT41KFILM
Bourns Inc., CD0603-Z5V1
EPC, EPC2038
EPC, EPC8009
Microchip, MCP1703T-5002E/MC
21
1
U40
IC's, Gate driver, 5.2 VDC, 1.2 A, 4.5 V to 5.5 V
Texas Instruments, LM5113TME/NOPB
22
23
24
25
26
1
1
4
0.19
4
U72
U71
TP1, TP2, TP3, TP4
J70, J90, GP1 (See Note 1)
J1, J3, J4, J5
IC's, Logic 2 NAND Gate, 1.65 V to 5.5 V, ± 24 mA
IC's, 2 Input AND Gate, Tiny Logic, 1.65 V to 5.5 V, ± 32 mA
Test Point, Test Point Subminiature
Headers, Male Vertical, 36 Pin. 230" Contact Height, .1" Center Pitch
Headers, 2 Rows by 2 Pins .1" Male Vertical, .1" Center Pitch
Fairchild, NC7SZ00L6X
Fairchild, NC7SZ08L6X
Keystone, 5015
FCI, 68001-236HLF
TE Connectivity, 5-146256-2
Reference
Part Description
Manufacturer/Part Number
Optional Components
Item
Qty
1
1
C7
Capacitors, DNP, Ceramic, 1.0 µF, 100 V, ±10%, X7S
TDK, C2012X7S2A105K125AB
2
1
C46
Capacitor, DNP, Ceramic, 100 nF, 16 V, ±10%, X7R
Murata, GRM155R71C104KA88D
3
3
R71, R72, R73
Resistor, DNP, 0 Ω, 1/10 W, Jumper
Panasonic, ERJ-3GEY0R00V
4
2
P74, P75
5
1
Lbuck
6
1
Lzvs
Inductor, DNP, 500 nH, , Q=180, 50 MHz, DCR=16.5 mΩ, IRMS=4.3 A
Coilcraft, 2929SQ-501JEB
7
1
D44
Diodes, DNP, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA
Diodes Inc, SDM03U40-7
8
1
J2
Connector, DNP, RP-SMA Plug, 50 Ω
Linx, CONREVSMA013.062
9
1
HS1
Hardware, DNP, W= (0.590") 15 mm, by L= (0.590") 15 mm, H=(0.374")
9.5 mm, 26.2°C/W @ 200 LFM
Advanced Thermal Solutions, ATS-54150D-C2-R0
Potentiometer, DNP, Multi-turn Potentiometer, 1 kΩ, ±10%, 1/4 W, 12 Turn
Murata, PV37W102C01B00
Top Adjustment Small
Inductor, DNP, 10 μH, ±20%, 3.5 A, 33 mΩ, Resonance=40 MHz, Frequency
Wϋrth, 744314101
Tested=100 KHz
Note 1 (36 pin Header to be cut as follows) J70 cut 4 pins used, J90 cut 2 pins used, GP1 cut 1 pin used
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
|4
V7 in
1
2
V7 in
IN
C95
1 μF, 25 V
.1” Male Vert.
Q44
EPC2038
100 V, 2.8 Ω
5V
OUT
GND
J90
QUICK START GUIDE
C96
1 μF, 25 V
C97
1 μF, 25 V
5V
1
R44
2
5 VHS 1
4E 7
C44
100 nF, 16 V
D41
CD 0603-Z5V1
C41
100 nF, 16 V
Gbtst
Logic Supply Regulator
GRret1
Synchronous Bootstrap Power Supply
D44
E MP T Y
SDM0 3U40
J1
Vmain
Vmain
Vmain
1
2
3
4
Vmain
1
4.7 V
1
R70
10 K
5V
H_Sig
U40
L M5113T M
DNP 1 K
2
C71
100 nF, 25 V
PWM1
1
PWM1
H_Sig
2
DNP 0 Ω
22 pF, 50 V
PWM2
PWM1
A
U72
NC 7SZ00L 6X
R75
2
DNP 220 Ω
2
DNP 1 K
C72
100 nF, 25 V
C3
10 nF, 100 V
2 x 2 .1” Male Vert.
Main Supply Input
PGND
Vmain
PH1
ProbeHole
Q1
EPC8009
5V
PGND
Vmain
Vmain
C4
1 μF, 100 V
T P3
C5
1 μF, 100 V
Output
1
SMD probe loop
L zvs
DNP 500 nH
PGND
PGND
ZVS Tank Circuit
L buck
DNP
Q2
EPC8009
L _Sig
PGND
1
1
2
3
4
PGND
Buck Output
C7
1 μF, 100 V
J3
PGND
1
2
3
4
T P4
1
2 x 2 .1” Male Vert.
SMD probe loop
SW Output
PGND
SMD probe loop
J2
SMA Board Edge
PGND
D75
SDM0 3U40
1
R72
J5
2 x 2 .1” Male Vert.
C6
1 μF, 100 V
GL H1
Gate Driver
HS 1
DNP
PGND
Output
T P2
5V
PWM2
D40
BAT5 4 K FIL M
C40
4.7 μF, 10 V
B
R73
DNP
Vmain
GRret1
4.7 V
C43
22 pF, 50 V
Deadtime Left
P75
1
GRH1
GL H1
GL H1
L _Sig
C2
10 nF, 100 V
SMD probe loop
GL H1
GRret1
C42
PWM2
1
5 VHS 1
GRH1
GRH1
R71
5V
D45
SDM0 3U40
R45
20 Ω
D74
SDM03U40
J70
.1” Male Vert.
1
2
3
4
Y
B
T P1
Deadtime Right
P74
C1
10 nF, 100 V
R46
27 K
1
A
C45
22 nF, 25 V
2
PWM1
C46
E MP T Y
100 nF, 16 V
2
DNP 100 Ω
U71
NC 7SZ08L 6X
PWM1
R74
1
1
2
5V
1
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
U95
MCP1703T-5002E/MC
5.0 V, 250 mA DFN
Logic Supply
7.5 VDC - 12 VDC
HF
GP1
1
2
.1” Male Vert.
DNP 0 Ω
PGND
HF Output
J4
1
2
3
4
2 x 2 .1” Male Vert.
PGND
Figure 4: EPC9067 - Schematic
GND
Demonstration System EPC9067
PGND
Ground Post
|5
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Demonstration Board Warning and Disclaimer
The EPC9067 board is intended for product evaluation purposes only and is not intended for commercial use. Replace components on the Evaluation Board only with those parts shown on
the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions.
This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk.
As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board
builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Efficient Power Conversion
Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant.
The Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express
or implied, as to the applications or products involved.
Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the
rights of others.
