Development Board
EPC9068
Quick Start Guide
EPC8010
100 V Half Bridge with Sync FET Bootstrap Gate Drive
QUICK START GUIDE
Demonstration System EPC9068
DESCRIPTION
The EPC9068 development board is a 100 V maximum device voltage,
2.7 A maximum output current, half bridge with onboard gate drives,
featuring the EPC8010 enhancement mode (eGaN®) field effect transistor
(FET). The gate driver has been configured with a synchronous FET
bootstrap circuit featuring the EPC2038 eGaN FET that eliminates high
side device losses induced by the reverse recovery losses of the internal
bootstrap diode of the gate driver. The purpose of this development
board is to simplify the evaluation process of the EPC8010 eGaN FET by
including all the critical components on a single board that can be easily
connected into any existing converter. The inclusion of the synchronous
FET bootstrap circuit enables significant increase in operating frequency
capability of the half bridge circuit.
The EPC9068 development board is 2” x 1.5” and has two EPC8010 eGaN
FETs in a half bridge configuration using Texas Instruments LM5113 gate
driver with supply and bypass capacitors. The board contains all critical
components and layout for optimal switching performance. There are
also various probe points to facilitate simple waveform measurement
and efficiency calculation. The board includes pads for the inclusion of
customer components to facilitate testing in a Buck converter or ZVS
class-D amplifier configurations. A complete block diagram of the circuit
is given in figure 1.
Table 1: Performance Summary (TA = 25°C) EPC9068
Symbol
Parameter
VDD
Gate Drive Input Supply
Range
VIN
Bus Input Voltage Range
Conditions
Min
Max
Units
7.5
12
V
80*
V
VOUT
Switch Node Output Voltage
100
V
IOUT
Switch Node Output Current
2.7*
A
VPWM
PWM Logic Input Voltage
Threshold
Minimum ‘High’ State Input
Pulse Width
Minimum ‘Low’ State Input
Pulse Width
6
1.5
V
V
Input ‘High’
3.5
Input ‘Low’
0
VPWM rise and
fall time < 10ns 40
VPWM rise and
fall time < 10ns 160#
ns
ns
*Assumes inductive load, maximum current depends on die temperature – actual maximum current
with be subject to switching frequency, bus voltage and thermals.
# Limited by time needed to ‘refresh’ high side bootstrap supply voltage.
For more information on the EPC8010 and EPC2038 eGaN FETs please
refer to the datasheet available from EPC at www.epc-co.com. The
datasheet should be read in conjunction with this quick start guide.
QUICK START PROCEDURE
Development board EPC9068 is easy to set up to evaluate the
performance of the EPC8010 eGaN FET. Refer to figure 2 for proper
connect and measurement setup and follow the procedure below:
1. Configure the board for either ZVS class-D operation OR Buck converter
operation.
EPC9068 development board
2. With power off, connect the input power supply bus to +VIN (J1) and
ground / return to –VIN (J4).
3. For ZVS class-D operation, with power off, connect a HF load to the HF
output (RF-J2 OR VSW-J3 and GND-J4). For Buck converter operation,
with power off, connect a DC load to the DC output (+VOUT -J5 and
GND-J4).
8. Turn on the bus voltage to the required value (do not exceed the
absolute maximum voltage of 52 V on VOUT ). Increase voltage slowly
while monitoring operation to ensure the FETs are operating within
their datasheet parameters.
4. With power off, connect the gate drive input to +VDD (J90, Pin-1) and
ground return to –VDD (J90, Pin-2).
9. Once operational, adjust the bus voltage and load PWM control
within the operating range and observe the output switching
behavior, efficiency and other parameters.
5. With power off, connect the input PWM control signal to PWM
(J70, Pin-1) and ground return to either Pin-2 or Pin-4 of J70.
6. Turn on the gate drive supply – make sure the supply is within the
7.5 V and 12 V range.
7. Turn on the controller / PWM input source and probe switching node
to observe switching operation.
10. For shutdown, please follow steps in reverse.
When measuring the high frequency content switch node, care
must be taken to avoid long ground leads. Measure the switch node by
placing the oscilloscope probe tip through the large via on the switch
node (designed for this purpose) and grounding the probe directly
across the GND terminal provided. See figure 3 for proper scope probe
technique.
NOTE.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
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QUICK START GUIDE
Demonstration System EPC9068
VIN
HF output
PWM
Gate drive
regulator
Logic and
dead-time
adjust
Q2
Level shift
VDD
L ZVS
DC output
L Buck
C OUT
C Bypass
Q1
C ZVS
GND
PGND
V
Figure 1: Block diagram of EPC9068 development board
7.5 – 12 VDC
+
VIN supply
(note polarity)
Main voltage
measurement
Switch-node
oscilloscope probe
Ground post
High frequency
connection
Dead-time
setting
(if installed)
80 VDCmax
+
SMA (optional)
VMain supply
(note polarity)
DC output
Control signal
inputs
V
DC output
measurement
Figure 2: Proper connection and measurement setup
Do not use
probe ground lead
Ground probe
against post
Place probe tip
in large via
Minimize loop
Figure 3: Proper measurement of the switch node
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
|3
QUICK START GUIDE
Demonstration System EPC9068
THERMAL CONSIDERATIONS
The EPC9068 development board showcases the EPC8010 eGaN FET.
Although the electrical performance surpasses that for traditional
Si devices, their relatively smaller size does magnify the thermal
management requirements. The EPC9068 is intended for bench
evaluation with low ambient temperature and convection cooling.
The addition of heat-sinking and forced air cooling can significantly
increase the current rating of these devices, but care must be taken to
not exceed the absolute maximum die temperature of 125°C.
NOTE. The EPC9068 development board does not have any current or thermal
protection on board.
Table 2: Bill of Materials - Amplifier Board
Item
Qty
Reference
Part Description
Manufacturer/Part Number
1
1
C40
Capacitors, Ceramic, 4.7 µF, 10 V, ±20%, X5R
Samsung, CL05A475MP5NRNC
2
3
3
3
C4, C5, C6
C95, C96, C97
Capacitors, Ceramic, 1.0 µF, 100 V, ±10%, X7S
Capacitors, Ceramic, 1.0 µF, 25 V, ±10%, X5R
TDK, C2012X7S2A105K125AB
Murata, GRM188R61E105KA12D
4
2
C71, C72
Capacitors, Ceramic, 100 nF, 25 V, ±10%, X7R
TDK, C1005X7R1E104K050BB
5
2
C41, C44
Capacitors, Ceramic, 100 nF, 16 V, ±10%, X7R
Murata, GRM155R71C104KA88D
6
1
C45
Capacitors, Ceramic, 22 nF, 25 V, ±10%, X7R
TDK, C1005X7R1E223K050BB
7
3
C1, C2, C3
Capacitors, Ceramic, 10 nF, 100 V, ±20%, X7S
TDK, C1005X7S2A103M050BB
8
2
C42, C43
Capacitors, Ceramic, 22 pF, 50 V, ±5%, NPO
TDK, C1005C0G1H220J050BA
9
1
R46
Resistors, 27 KΩ, ±1%, 1/10 W
Panasonic, ERJ-2RKF2702X
10
1
R70
Resistors, 10.0 KΩ, ±1%, 1/10 W
Panasonic, ERJ-6ENF1002V
11
1
R74
Resistors, 270 Ω, ±1%, 1/10 W
Panasonic, ERJ-2RKF2700X
12
1
R75
Resistors, 82 Ω, ±1%, 1/10 W
Panasonic, ERJ-2RKF82R0X
13
1
R45
Resistors, 20 Ω, ±1%, 1/16 W
Stackpole, RMCF0402FT20R0
14
1
R44
Resistors, 4.7 Ω, ±1%, ±/16 W
Yageo, RC0402FR-074R7L
15
3
D45, D74, D75
Diodes, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA
Diodes Inc, SDM03U40-7
16
1
D40
Diodes, Schottky, 100 V, 0.2 A, VF=1 V @ 200 mA
ST Microelectronics, BAT41KFILM
17
1
D41
Diodes, Zener, 5.1 V, 150 mW ±5%
Bourns Inc., CD0603-Z5V1
18
1
eGaN® FET, 100 V, 500 mA, RDS(on) =2.1 Ω @ 50 mA, 5V
EPC, EPC2038
19
2
Q44
Q1, Q2
eGaN® FET, 100bV, 3.4 A, RDS(on) =160 mΩ @ 500 mA
EPC, EPC8010
20
1
U95
IC's, 5 V LDO, 250 mA, up to 16 VIN, Vdropout=0.33 V @ 250 mA
Microchip, MCP1703T-5002E/MC
21
1
U40
IC's, Gate Driver, 5.2 VDC, 1.2 A, 4.5 V to 5.5 V
Texas Instruments, LM5113TME/NOPB
22
1
U72
IC's, Logic 2 NAND Gate, 1.65 V to 5.5 V, ± 24 mA
Fairchild, NC7SZ00L6X
23
1
U71
IC's, 2 input AND Gate, Tiny Logic, 1.65 V to 5.5 V, ± 32mA
Fairchild, NC7SZ08L6X
24
4
TP1, TP2, TP3, TP4
Test Point, Test Point Subminiature
Keystone, 5015
25
0.19
J70, J90, GP1 (See Note 1)
Headers, Male Vertical, 36 Pin. 230" Contact Height, .1" Center Pitch
FCI, 68001-236HLF
26
4
J1, J3, J4, J5
Headers, 2 Rows by 2 Pins .1" Male Vertical, .1" Center Pitch
TE Connectivity, 5-146256-2
Optional Components
Item
Qty
Reference
Part Description
Manufacturer/Part Number
1
1
C7
Capacitors, DNP, Ceramic, 1.0 µF, 100 V, ±10%, X7S
TDK, C2012X7S2A105K125AB
2
1
C46
Capacitor, DNP, Ceramic, 100 nF, 16 V, ±10%, X7R
Murata, GRM155R71C104KA88D
3
3
R71, R72, R73
Resistor, DNP, 0 Ω, 1/10 W, Jumper
Panasonic, ERJ-3GEY0R00V
Potentiometer, DNP, Multi-turn Potentiometer, 1 kΩ, ±10%, 1/4 W, 12 Turn
Murata, PV37W102C01B00
Top Adjustment Small
Inductor, DNP, 10 μH, ±20%, 3.5 A, 33 mΩ, Resonance=40 MHZ, Frequency
Wϋrth, 744314101
Tested=100 KHz
4
2
P74, P75
5
1
Lbuck
6
1
Lzvs
Inductor, DNP. 500 nH, Q=180, 50 MHZ, DCR=16.5 mΩ, Irms=4.3 A
Coilcraft, 2929SQ-501JEB
7
1
D44
Diodes, DNP, Schottky Diode, 30 V, VF=370 mV @ 1 mA, 30 mA
Diodes Inc, SDM03U40-7
8
1
J2
Connector, DNP, RP-SMA Plug, 50 Ω
Linx, CONREVSMA013.062
HS1
Hardware, DNP, W= (0.590") 15 mm, by L= (0.590") 15 mm, H= (0.374")
9.5 mm, 26.2°C/W @ 200 LFM
Advanced Thermal Solutions, ATS-54150D-C2-R0
9
1
Note 1 (36 pin Header to be cut as follows) J70 cut 4 pins used, J90 cut 2 pins used, GP1 cut 1 pin used
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
|4
V7 in
1
2
V7 in
IN
C95
1 μF, 25 V
.1” Male Vert.
Q44
EPC2038
100 V, 2.8 Ω
5V
OUT
GND
J90
QUICK START GUIDE
C96
1 μF, 25 V
C97
1 μF, 25 V
5V
1
R44
2
5 VHS 1
4E 7
C44
100 nF, 16 V
D41
CD 0603-Z5V1
C41
100 nF, 16 V
Gbtst
Logic Supply Regulator
GRret1
Synchronous Bootstrap Power Supply
D44
E MP T Y
SDM0 3U40
J1
Vmain
Vmain
Vmain
1
2
3
4
Vmain
1
4.7 V
U71
NC 7SZ08L 6X
A
1
5V
H_Sig
U40
L M5113T M
DNP 1 K
2
C71
100 nF, 25 V
PWM1
1
PWM1
H_Sig
2
DNP 0 Ω
22 pF, 50 V
PWM2
PWM1
A
U72
NC 7SZ00L 6X
R75
2
DNP 220 Ω
D40
BAT5 4 K FIL M
C40
4.7 μF, 10 V
2
DNP 1 K
C72
100 nF, 25 V
Vmain
PH1
ProbeHole
Q1
EPC8010
5V
HS 1
DNP
PGND
2 x 2 .1” Male Vert.
Main Supply Input
PGND
Vmain
Vmain
C4
1 μF, 100 V
T P3
C5
1 μF, 100 V
Output
1
SMD probe loop
L zvs
DNP 500 nH
PGND
PGND
ZVS Tank Circuit
L buck
DNP
Q2
EPC8010
PGND
1
1
2
3
4
PGND
Buck Output
C7
1 μF, 100 V
J3
PGND
1
2
3
4
T P4
1
2 x 2 .1” Male Vert.
SMD probe loop
SW Output
PGND
SMD probe loop
J2
SMA Board Edge
PGND
1
R72
J5
2 x 2 .1” Male Vert.
C6
1 μF, 100 V
GL H1
L _Sig
D75
SDM0 3U40
PWM2
C3
10 nF, 100 V
Output
T P2
5V
PGND
Gate Driver
B
R73
DNP
Vmain
GRret1
4.7 V
C43
22 pF, 50 V
Deadtime Left
P75
1
GRH1
GL H1
GL H1
L _Sig
C2
10 nF, 100 V
SMD probe loop
GL H1
GRret1
C42
PWM2
1
5 VHS 1
GRH1
GRH1
R71
5V
D45
SDM0 3U40
R45
20 Ω
D74
SDM03U40
J70
.1” Male Vert.
1
2
3
4
P74
C1
10 nF, 100 V
R46
27 K
T P1
Deadtime Right
Y
B
R70
10 K
DNP 100 Ω
C45
22 nF, 25 V
1
PWM1
C46
E MP T Y
100 nF, 16 V
2
2
PWM1
R74
1
1
2
5V
1
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2017 |
U95
MCP1703T-5002E/MC
5.0 V, 250 mA DFN
Logic Supply
7.5 VDC - 12 VDC
HF
GP1
1
2
.1” Male Vert.
DNP 0 Ω
PGND
HF Output
J4
1
2
3
4
2 x 2 .1” Male Vert.
PGND
Figure 4: EPC9068 - Schematic
GND
Demonstration System EPC9068
PGND
Ground Post
|5
For More Information:
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Demonstration Board Warning and Disclaimer
The EPC9068 board is intended for product evaluation purposes only and is not intended for commercial use. Replace components on the Evaluation Board only with those parts shown on
the parts list (or Bill of Materials) in the Quick Start Guide. Contact an authorized EPC representative with any questions.
This board is intended to be used by certified professionals, in a lab environment, following proper safety procedures. Use at your own risk.
As an evaluation tool, this board is not designed for compliance with the European Union directive on electromagnetic compatibility or any other such directives or regulations. As board
builds are at times subject to product availability, it is possible that boards may contain components or assembly materials that are not RoHS compliant. Efficient Power Conversion
Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant.
The Evaluation board (or kit) is for demonstration purposes only and neither the Board nor this Quick Start Guide constitute a sales contract or create any kind of warranty, whether express
or implied, as to the applications or products involved.
Disclaimer: EPC reserves the right at any time, without notice, to make changes to any products described herein to improve reliability, function, or design. EPC does not assume any liability
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, or other intellectual property whatsoever, nor the
rights of others.
