ELJ810-248B

Infrared LED - Module ELJ-810-248B Radiation Type Technology Case Infrared 40 degrees AlGaAs/AlGaAs plastic lens, metal case Description Outline: H=11,8 mm (± 0,5) 11 2,0 11 High-power infrared-LED module, double-hetero AlGaAs structure, six chips are soldered on metal header, fast switching time Applications Illumination for CCD-cameras, remote control and optical communications, traffic signals, measurement systems R 6, 4 M10 R 8 Absolute Maximum Ratings at Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Value Unit on heat sink IF 250 mA tp≤10 µs, f≤500 Hz IFM 2000 mA Reverse voltage* IR = 10 µA VR 20 V Power dissipation on heat sink (S ≥ 50 cm²) P 3 W Operating temperature range Tamb -60 to +85 °C Storage temperature range Tstg -60 to +85 °C Tj 100 °C DC forward current Peak forward current Junction temperature *Always protect the LED source against reverse currents Optical and Electrical Characteristics at Tamb = 25°C, unless otherwise specified Parameter Forward voltage Test conditions IF = 100 mA Symbol VF Forward voltage IF = 250 mA VF 13 V Radiant power IF = 250 mA Φe 175 mW Radiant intensity IF = 250 mA Ie 380 mW/sr Radiant intensity IF = 250 mA Ie 450 mW/sr Peak wavelength IF = 250 mA λp Spectral bandwidth at 50% IF = 250 mA ∆λ0,5 30 nm Viewing angle IF = 250 mA 2ϕ 40 deg Switching time IF = 250 mA tr, tf 150 ns RthJC 10 K/W Thermal resistance junction-case Min 790 Typ Max 10.5 810 830 Unit V nm rev.03/02 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str. 325 b, Hs. 201, Tel.: +49-30-6576 2543, Fax.: +49-30-6576 2545