ELS-870-195

SMD-LED 16.11.2007 Radiation Infrared Type SMD Technology AlGaAs/AlGaAs ELS-870-195 rev. 04 Case SMD 1206 Description 2 all dimensions: m m all tolerances: ± 0,1 0,5 pad 1,15 x 1,0 cathode High-power, high speed LED in standard SMD package, compact design allows for easy circuit board mounting and assembling of arrays 1,2 Applications Optical communications, remote control, light barriers, measurement applications and security systems, automation 1,2 R 0, 3 1,6 3,2 Absolute Maximum Ratings at Tamb = 25°C, unless otherwise specified Parameter DC forward current Peak forward current Surge forward current Power dissipation Operating temperature range Storage temperature range tp ≤ 50 µs, tp/T ≤ 0.5 tp ≤ 10 µs Test сonditions Symbol IF IFM ISFM P Tamb Tstg Value 100 200 2000 200 -20 to +85 -55 to +100 Unit mA mA mA mW °C °C Electrical and Optical Characteristics at Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power Peak wavelength Spectral bandwidth at 50% Viewing angle Switching time IF = 100 mA IF = 100 µA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VR Φe λp ∆λ0.5 ϕ tr , t f 5 15 865 20 875 45 120 25 890 Min Typ 1,5 Max 2,0 Unit V V mW nm nm deg. ns Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1,0