SG-531

Crystal oscillator FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-51 series SG-531 series Product number (please refer to page 1) HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR Q3 2 5 1 0 x x x x x x x 0 0 Q3 2 5 3 1 x x x x x x x 0 0 • • • • Pin compatible with full-size metal can. (SG-51 series) Pin compatible with half-size metal can. (SG-531 series) Cylindrical AT-cut crystal unit builtin, thus assuring high reliability. Use of CMOS IC enables reduction of current consumption. Actual size SG-51 SG-531 Specifications (characteristics) Item Output frequency range Power source voltage Temperature range Symbol f0 Specifications SG-51P/531P 1.0250 MHz to 26.0000 MHz SG-51PTJ/531PTJ SG-51PH/531PH Remarks Refer to page 31. "Frequency range" 26.0001 MHz to 66.6667 MHz -0.3 V to +7.0 V 5.0 V±0.5 V Max. supply voltage VDD-GND Operating voltage VDD Storage temperature TSTG Operating temperature TOPR ∆f/f0 Iop IOE tw/t VOH -0.5 V to +7.0 V Stored as bare product after unpacking Refer to page 31. "Frequency range" B type is possible up to 55.0 MHz No load condition OE=GND 1/2 VDD level 1.4 V level IOH = -400 µA (P,PTJ) /-4 mA (PH) IOL = 16 mA (P) / 8 mA (PTJ) / 4mA (PH) CL≤15 pF IIH=1 µA Max. (OE=VDD) Frequency stability Current consumption Output disable current CMOS level Duty TTL level Output voltage Output load condition (fan out) CMOS TTL Output enable/disable input voltage Output rise time Output fall time VOL CL N VIH VIL tTLH tTHL tOSC fa S.R. -55 °C to +125 °C -20 °C to +70 °C (-40 °C to +85 °C) B: ± 50 x 10-6 C: ±100 x 10-6 23 mA Max. 35 mA Max. 12 mA Max. 28 mA Max. 20 mA Max. 40 % to 60 % — 40 % to 60 % 45 % to 55 % — VDD-0.4 V Min. 2.4 V Min. VDD -0.4 V Min. 0.4 V Max. 50 pF Max. — 50 pF Max. 10 TTL Max. 5 TTL Max. — 2.0 V Min. 3.5 V Min. 2.0 V Min. 0.8 V Max. 1.5 V Max. 0.8 V Max. 8 ns Max. 8 ns Max. 4 ms Max. — 5 ns Max. — 5 ns Max. 10 ms Max. ±5 x 10-6/year Max. ±20 x 10-6 Max. 7 ns Max. — 7 ns Max. — IIL= -100 µA Min. (OE=GND), PTJ: IIL = -500 µA Min. (OE=GND) CMOS load: 20 %→80 % VDD TTL load: 0.4 V→2.4 V CMOS load: 80 %→20 % VDD TTL load: 2.4 V→0.4 V More than for 1 ms until VDD =0 V→4.5 V Time at 4.5 V to be 0 s Ta=+25 °C, VDD =5 V,first year CMOS level TTL level CMOS level TTL level Oscillation start up time Aging Shock resistance Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition. • External by-pass capacitor is recommended. External dimensions SG-51 series 19.8 Max. #14 6.36 #8 (Unit: mm) SG-531 series 13.7 Max. NO. Pin terminal 1 7 8 14 OE GND OUT VDD 7.62 #8 #5 NO. 1 4 5 8 Pin terminal OE or ST GND OUT VDD 7.62 E SG51P 9353B 16.0000MHz C #1 #7 SG531PTJC 60.0000M E 9353B #1 #4 5.3 Max. 0.2 Min. 0.51 2.54 Min. 15.24 Note. OE Pin (P, PTJ, PH, PTW, PHW, PCW) OE pin - "H" or "open" : Specified frequency output. OE pin - "L" : Output is high impedance. 0.25 90° to 105° 5.3 Max. 0.2 Min. 6.6 0.51 2.54 Min. 7.62 90° to 105° 0.25 ST pin (STW, SHW, SCW) ST pin - "H" or "open" : Specified frequency output. ST pin - "L" : Output is low level (weak pull - down), oscillation stops. 45 Crystal oscillator Specifications (characteristics) Item Symbol Specifications Output frequency range fO Max. supply voltage VDD-GND Power source Operating voltage VDD voltage Storage temperature TSTG Temperature Operating temperature TOPR range Frequency stability Current consumption Output disable current Standby current Duty Output voltage Output load condition (fan out) Output enable disable input voltage Output rise time Output fall time Oscillation start up time Aging Shock resistance ∆f/f0 IOP IOE IST tw/t VOH VOL CL VIH VIL tTLH tTHL tOSC fa S.R. SG-531PCG SG-531SCG 1.5000 MHz to 26.0000 MHz -0.5 V to +7.0 V 2.7 V to 3.6 V -55 °C to +125 °C -40 °C to +85 °C B : ±50 x 10-6 C : ±100 x 10-6 M : ±100 x 10-6 12 mA Max. 10 mA Max. — — 50 µA Max. 45 % to 55 % VDD -0.4 V Min. 0.4 V Max. 25 pF 70 % VDD Min. 20 % VDD Max. 4.0 ns Max. 4.0 ns Max. 12 ms Max. ±5 x 10-6 / year Max. ±20 x 10-6 Max. Remarks Refer to page 31. "Frequency range" Stored as bare product after unpacking Refer to page 31. "Frequency range" -20 °C to +70 °C -40 °C to +85 °C No load condition OE=GND (PCG) ST=GND (SCG) 50 % VDD, CL = 25 pF IOH = -8 mA IOL = 8 mA OE, ST OE, ST 20 % to 80 % VDD, CL ≤ 25 pF 80 % to 20 % VDD CL ≤ 25 pF Time at minimum operating voltage to be 0 s Ta=+25 °C, VDD =3.3 V, First year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Specifications (characteristics) Item Symbol Specifications Output frequency range fO Max. supply voltage Power source VDD-GND Operating voltage voltage VDD Storage temperature TSTG Temperature Operating temperature TOPR range Frequency stability Current consumption Output disable current Standby current ∆f/f0 IOP IOE IST Duty tw/t Output voltage VOH VOL Output load condition (fan out) CL Output enable disable input voltage VIH VIL Output rise time tTLH Output fall time tTHL Oscillation start up time Aging Shock resistance tOSC fa S.R. SG-531PTW/STW SG-531PHW/SHW 55.0001 MHz to 135.0000 MHz -0.5 V to +7.0 V 5.0 V ± 0.5 V -55 °C to +100 °C -20 °C to +70 °C B : ±50 x 10-6 C : ±100 x 10-6 — 45 mA Max. 30 mA Max. 50 µA Max. 40 % to 60 % — 45 % to 55 % — — 40 % to 60 % — 45 % to 55% — — VDD -0.4 V Min. 0.4 V Max. 15 pF — 5 TTL + 15 pF — 25 pF — — 15 pF — 25 pF — 50 pF — — 2.0 V Min. 0.8 V Max. 2.0 ns Max. — 4.0 ns Max. — — 3.0 ns Max. — — — 4.0 ns Max. 2.0 ns Max. — 4.0 ns Max. — — 3.0 ns Max. — — — 4.0 ns Max. 10 ms Max. ±5 x 10-6 /year Max. ±20 x 10-6 Max. SG-531PCW/SCW 26.0001 MHz to 135.0000 MHz 3.3 V ± 0.3 V -40 °C to +85 °C M : ±100 x 10-6 28 mA Max. 16 mA Max. — — 40 % to 60 % — 45 % to 55% Remarks Refer to page 31. "Frequency range" — — — 15 pF — — 30 pF 0.7 VDD Min. 0.2 VDD Max. — — — 3.0 ns Max. 4.0 ns Max. — — — 3.0 ns Max. 4.0 ns Max. Stored as bare product after unpacking Refer to page 31. "Frequency range" -20 °C to +70 °C -40 °C to +80 °C No load condition OE=GND(P∗W) ST=GND(S∗W) TTL load : 1.4 V, CL = Max. TTL load : 1.4 V, 5TTL + 15 pF, fo ≤ 66.6667 MHz CMOS load : 50% VDD, CL = Max. CMOS load : 50% VDD, CL = 25 pF, fo ≤ 66.6667 MHz CMOS load : 50% VDD, CL = 25 pF, fo ≤ 40.0 MHz IOH= -16 mA (∗TW/∗HW)/-8 mA(∗CW) IOL= 16 mA (∗TW/∗HW)/8 mA(∗CW) fo ≤ 135 MHz fo ≤ 90 MHz fo ≤ 66.6667 MHz fo ≤ 135 MHz fo ≤ 125 MHz fo ≤ 66.6667MHz fo ≤ 40.0 MHz OE,ST OE,ST TTL load: 0.8 V→2.0 V, CL = Max. TTL load: 0.4 V→2.4 V, CL = Max. CMOS load: 20 %→80 % VDD, CL= 25 pF CMOS load: 20 %→80 % VDD, CL= 15 pF CMOS load: 20 %→80 % VDD, CL= Max. TTL load: 2.0 V→0.8 V, CL = Max. TTL load: 2.4 V→0.4 V, CL = Max. CMOS load: 80 %→20 % VDD, CL= 25 pF CMOS load: 80 %→20 % VDD, CL= 15 pF CMOS load: 80 %→20 % VDD, CL= Max. Time at minimum operating voltage to be 0 s Ta=+25 °C, VDD =5.0 V / 3.3 V, First year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions 46