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SG-710

SG-710

  • 厂商:

    EPSON

  • 封装:

  • 描述:

    SG-710 - HIGH-FREQUENCY CRYSTAL OSCILLATOR - Epson Company

  • 数据手册
  • 价格&库存
SG-710 数据手册
Crystal oscillator HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-710 series • • • • Ceramic package with 1.5 mm thickness. Excellent shock resistance and environmental capability. Low current consumption due to use of C-MOS technology. Low current consumption by output enabled function (OE) or standby function (ST). Specifications (characteristics) Item Output frequency range Power source voltage Temperature range Max. supply voltage Operating voltage Storage temperature Operating temperature Symbol f0 VDD-GND VDD TSTG TOPR TSOL ∆f/f0 Iop IOE IST tw/ t VOH VOL N CL VIH VIL tTLH tTHL tOSC fa S.R. 24 mA Max. 12 mA Max. SG-710PTK SG-710PHK Specifications SG-710ECK Remarks 1.8000 MHz to 50.0000 MHz 1.8000 MHz to 80.0000 MHz 1.8000 MHz to 67.0000 MHz -0.5 V to +7.0 V 5.0 V ±0.5 V 3.3 V ±0.3 V -55 °C to +125 °C -10 °C to +70 °C (-40 °C to +85 °C) Please contact us on availability of -40 °C to +85 °C B,C:-10 °C to +70 °C, M:-40 °C to +85 C° No load condition OE=GND(PTK, PHK) ST=GND(ECK) C-MOS load: 1/2 VDD level TTL load: 1.4 V level IOH=-16 mA(PTK,PHK),-2 mA(ECK) IOL= 16 mA(PTK,PHK), 2 mA(ECK) Soldering condition Frequency stability Current consumption Output disable current Standby current Duty High output voltage Low output voltage Output load condition (fan out) Twice at under +260 °C within 10 s B: ±50 x 10-6 C: ± 100 x 10-6 M: ± 100 x 10-6 40 mA Max. 16 mA Max. 18 mA Max. — — — 45 % to 55 % 2.4 V Min. 0.4 V Max. 10 TTL Max. (15 pF Max.) 2.0 V Min. 0.8 V Max. — 5 ns Max. — 5 ns Max. 45 % to 55 % 40 % to 60 % VDD -0.5 V Min. 0.5 V Max. 10 TTL Max. 50 pF Max. 2.0 V Min. 0.8 V Max. 5 ns Max. — 5 ns Max. — 10 ms Max. ±5 x 10 /year Max. -6 10 µA Max. 40 % to 60 % — 0.9 x VDD Min. 0.1 x VDD Max. — 15 pF Max. 0.7 x VDD Min. 0.3 x VDD Max. 6 ns Max. 6 ns Max. TTL C-MOS Output enable/disable input voltage Output rise time C-MOS level TTL level Output fall time C-MOS level TTL level Oscillation start up time Aging Shock resistance OE terminal(PTK,PHK) ST terminal(ECK) C-MOS load: 10 %→90 % VDD TTL load: 0.4 V→2.4 V C-MOS load: 90 %→10 % VDD TTL load: 2.4 V→0.4 V _ Time at minimum operating voltage to be 0 s Ta= +25 °C, VDD = 5.0 V/3.3 V(ECK) ±10 x 10-6 Max. Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2sine wave in 3 directions External dimensions Bottom View #4 #3 #1 1.4 #2 (Unit: mm) NO. Pin terminal 1 OE or ST 2 GND 3 OUT 4 VDD Recommended soldering pattern 1.8 (Unit: mm) 2.6 E 40.000 W HC724A L 1.5 Max. L W 4.2 #1 #2 #4 5.08 #3 PTK/PHK/ECK 7.5 Max. 5.0 Max. ∗∗W 7.2 Max. 5.2 Max. 5.08 5.08 37 2.0 Actual size Specifications (characteristics) Item Output frequency range Symbol f0 SG-710PTW/STW SG-710PHW/SHW Specifications SG-710PCW/SCW 66.6667 MHz to 135.0000 MHz Remarks 80.0001 MHz to 135.0000 MHz Power source Max. supply voltage VDD-GND VDD voltage Operating voltage TSTG Temperature Storage temperature TOPR range Operating temperature TSOL Soldering condition (lead part) Frequency stability Current consumption Output disable current Output disable current C-MOS level Duty TTL level Output voltage ∆f/f0 Iop IoE IST tw/t VOH VOL CL VIH VIL tTLH tTHL tOSC fa S.R. Output load condition (fan out) Output enable disable input voltage C-MOS level Output TTL level rise time C-MOS level Output TTL level fall time Oscillation start up time Aging Shock resistance -0.5 V to +7.0 V 5.0 V±0.5 V 3.3 V±0.3 V -55 °C to +125 °C -20 °C to +70 °C -40 °C to +85 °C Twice at under 260 °C within 10 s or under 230 °C within 3 min. B: ±50 x 10-6 C: ±100 x 10-6 M: ±100 x 10-6 45 mA Max. 28 mA Max. 30 mA Max. 16 mA Max. 50 µA Max. — 40 % to 60 % 40 % to 60 % — VDD-0.4 V Min. 0.4 V Max. 15 pF Max. 0.7 VDD Min. 2.0 V Min. 0.2 VDD Max. 0.8 V Max. 3 ns Max. — 3 ns Max. — 4 ns Max. — 3 ns Max. — 3 ns Max. — 4 ns Max. — 10 ms Max. ±5 x 10-6/year Max. ±20 x 10-6 Max. -20 °C to +70 °C -40 °C to +85 °C No load condition OE=GND(P*W) ST=GND(S*W) C-MOS load: 1/2VDD TTL load: 1.4 V IOH= -16 mA (*TW/HW)/-8 mA(*CW) IOL= -16 mA (*TW/HW)/8 mA(*CW) OE,ST OE,ST C-MOS load: 20 %→80 % VDD TTL load: 0.4 V→2.4 V C-MOS load: 80 %→20 % VDD TTL load: 2.4 V→0.4 V Time at 4.5 V to be 0 s Ta=+25 °C, VDD =5 V Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Operating condition and Frequency band Operating condition Frequency stability:B ( -20 to +70 °C) 5 V±0.5 V Frequency stability:C (-20 to +70 °C) Frequency stability:M ( -40 to +85 °C) Frequency stability:B ( -20 to +70 °C) 3.3 V±0.3 V Frequency stability:C ( -20 to +70 °C) Frequency stability:M ( -40 to +85 °C) 1 MHz 1.8 SG-710PTK 1.8 SG-710PTK 1.8 SG-710PTK 1.8 26 SG-710ECK 1.8 26 SG-710ECK 1.8 26 SG-710ECK 67 SG-710PCW/SCW 67 SG-710PCW/SCW 135 50 SG-710PHK 67 SG-710PCW/SCW 135 135 50 SG-710PHK 80 50 MHz 50 SG-710PHK 80 SG-710PTW/STW/PHW/SHW 80 SG-710PTW/STW/PHW/SHW 135 100 MHz 150 MHz 135 38
SG-710 价格&库存

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