SG-8002JC

C rystal Crystal oscillator Epson Toyocom Product Numbe r (please contact us) CRYSTAL OSCILLATOR PROGRAMMABLE SG-8002JF : Q3307JCx1xxxx00 SG-8002CA: Q3306JAx1xxxx00 SG - 8002JC / JA series •Frequency range •Supply voltage •Function •Thickness : 1 MHz to 125 MHz : 3.3 V or 5.0 V : Output enable(OE) or Standby( ST ) : 2.7 mm Max.(SG-8002JC) : 4.7 mm Max.(SG-8002JA) Package and pin compatible with SG-636 (SG-8002JC) Package and pin compatible with SG-615 (SG-8002JA) •Short mass production lead time by PLL technology. •SG-Writer available to purchase. Please contact Epson Toyocom or local sales representative. Actual size SG-8002JC SG-8002JA Specifications (characteristics) Item Output frequency range Supply voltage Temperature range Storage temperature Operating temperature Symbol Specifications *2 PT / ST PH / S H 1 MHz to 125 MHz 4.5 V to 5.5 V PC / SC VCC=4.5 V to 5.5 V 1 MHz to 125 MHz VCC=3.0 V to 3.6 V 1 MHz to 66.7 MHz VCC=2.7 V to 3.6 V 2.7 V to 3.6 V Remarks f0 VCC T_stg T_use -55 °C to +125 °C (JC:-55 °C to +100 °C) -20 °C to +70 °C (-40 °C to +85 °C) Store as bare product after unpacking Refer to “Outline specifications” (Frequency range) -40 °C to +85 °C SG-8002JC:-20 °C to +70 °C Only B: ±50 × 10-6 ,C: ±100 × 10-6 -20 °C to +70 °C F requency tolerance f_tol -6 -40 °C to +85 °C *3 (except SG-8002JC) M: ±100 × 10 Current consumption ICC 45 mA Max. 28 mA Max. No load condition, Max. frequency Disable current I_dis 30 mA Max. 16 mA Max. OE=GND(PT,PH,PC) Stand-by current I_std 50 µA Max. ST =GND(ST,SH,SC) 40 % to 60 % CMOS load:50 % VCC level, Max. load condition Symmetry *1 SYM 40% to 60% T TL load: 1.4 V level, Max. load condition High output voltage VOH VCC-0.4 V Min. IOH=-16 mA(PT,ST,PH,SH),-8 mA(PC,SC) Low output voltage VOL 0.4 V Max. IOL =16 mA(PT,ST,PH,SH), 8 mA(PC,SC) Output load condition (TTL) *1 L_TTL 5TTL Max. f0 ≤ 90 MHz and Max. Supply voltage Output load condition (CMOS) *1 L_CMOS 15pF Max. Max. frequency and Max. Supply voltage Output enable / VIH 2.0 V Min. 70 % VCC Min. ST terminal or OE terminal 0.8 V Max. 20 % VCC Max. disable input voltage VIL 3 ns Max. CMOS load: 20 % VCC to 80 % VCC level Rise time / Fall time *1 tr / tf 4 ns Max. T TL load: 0.4 V to 2.4 V level 10 ms Max. Time at minimum supply voltage to be 0 s Start-up time t_str +25 °C, VCC=5.0 V/ 3.3 V (PC,SC) First year ±5 × 10-6 / year Max. F requency aging f_aging *1 Operating temperature (-40 °C to +85 °C), the available frequency, symmetry and output load conditions, please refer to “Outline specifications” page. *2 *3 PLL-PLL connection & Jitter specification, please refer to “Jitter specifications and characteristics chart” page. PT / S T and PH / SH for “M” tolerance will be available up to 55 MHz.(Unavailable “M” tolerance of SG-8002JC) Checking possible by the Frequency Checking Program. External dimensions SG-8002JC 1 0.5 Max. #4 #3 (Unit:mm ) Footprint (Recommended) (Unit:mm) E125.0000 C 2PH 9357B #1 #2 5.0 5.8 Max. 0 .51 5.08 ( 1.0) 3.6 ( 1.0) 0.05Min. P in map Pin Connection 1 OE or ST 2 G ND 3 OUT 4 VCC 2.7 Max. 4.6 Note. OE Pin (PT, PH, PC) OE pin = "H" or "open" : Specified frequency output. OE pin = "L" : Output is high impedance. ST pin (ST, SH, SC) ST pin = "H" or "open" : Specified frequency output. ST pin = "L" : Output is low level (weak pull - down), oscillation stops. 1.3 SG-8002JC 2.1 5.08 1.3 SG-8002JA 14.0 Max. #4 #3 Metal may be exposed on the top or bottom of this product. This will not affect any quality, reliability or electrical spec. SG-8002JA 3.0 8.8 5.08 2PH 9357B 4.7 Max. #1 #2 8.65 EPSON 100.0000 C P in map Pin Connection 1 OE or ST 2 G ND 3 OUT 4 VCC 9.8 Max. 0 .51 5 .08 0.25Min. 7 .62 http://www.epsontoyocom.co.jp 0.25 C rystal oscillator Crystal oscillator Epson Toyocom SG-8002 Series_ Outline of specifications Item Model Current Consump tion Supply Voltage 4.5 V to 5.5 V 1 5 pF 3.0 V to 3.6 V 1 5 pF (2.7 V to 3.6 V) Output load condition Output rise time Output fall time Symmetry Function PH 30 mA SG-8002LB (SOJ 4-pin) SH SC Ma x. 3.0 ns Max. 40 % to 60 %(50 % V CC, L_CMOS=15 pF , (20 % V CC to 80 % V CC,L_CMOS=Max.) 3.0 ns Max. (20 % V CC to 80 % V CC, L_CMOS=Max.) f0≤80 MHz/-40 °C to+85 °C) OE ST PC 28 mA Ma x. 45 % to 55 %(50 % V CC, L_CMOS=15 pF V CC=3.0 V to 3.6 V, , 40 % to 60 %(50 % V CC, L_CMOS=15 pF V CC=3.0 V to 3.6 V, , ↑ (50 % V CC, L_CMOS=15 pF, V CC=2.7 V to 3.6 V, f0≤40 MHz) OE f0≤125 MHz) f0≤66.7 MHz) ST OE ST SG-8002CA (SON) SG-8002JA (SOJ 4-pin) SG-8002DB (DIP 14-pin) SG-8002DC (DIP 8-pin) PT ST 45 mA PH SH PC 28 mA 3.0 V to 3.6 V SC PT ST 45 mA 4.5 V to 5.5 V Ma x. (2.7 V to 3.6 V) Ma x. 5 TTL+15 pF (f0≤125 MHz/-20 °C to+70 °C) 25 pF (f0≤66.7 MHz/-20 °C to+70 °C) 5 TTL+15 pF (f0≤40 MHz/-40 °C to +85 °C) 15 pF(f0≤55 MHz/-40 °C to +85 °C) 4.5 V to 5.5 V 2 5 pF 50 pF 15 pF 25 pF (f0≤125 MHz/-20 °C to+70 °C) (f0≤66.7 MHz/-20 °C to+70 °C) (f0≤55 MHz/-40 °C to+85 °C) (f0≤40 MHz/-40 °C to+85 °C) 45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF, f0≤66.7 MHz/-20 °C to +70 °C) 2.0 ns Max. ↑ (1.4 V, L_TTL=5 TTL+15 pF, f0≤40.0 MHz/-40 °C to +85 °C) (0.8 V to 2.0 V,L_CMOS or L_TTL=Max.) 40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF, f0≤125 MHz/-20 °C to +70 °C) 4.0 ns Max. ↑ (1.4 V, L_CMOS=25 pF, f0≤66.7 MHz/-20 °C to +70 °C) (0.4 V to 2.4 V,L_CMOS or L_TTL=Max.) ↑ (1.4 V, L_CMOS=15 pF, f0≤55.0 MHz/-40 °C to +85 °C) 3.0 ns Max. (20 % V CC to 80 4.0 ns Max. (20 % V CC to 80 3.0 ns Max. (20 % V CC to 80 4.0 ns Max. (20 % V CC to 80 45 ↑ % V CC,L_CMOS ≤25) 40 ↑ % V CC,L_CMOS=Max.) ↑ 45 % V CC,L_CMOS ≤15) 40 ↑ % V CC,L_CMOS=Max.) % to 55 %(50 (50 % to 60 %(50 (50 (50 % to 55 %(50 % to 60 %(50 (50 % V CC, L_CMOS=25 pF f0≤66.7 MHz/-20 °C to +70 °C) , % V CC, L_MOS=25 pF, f0≤40.0 MHz/-40 °C to +85 °C) % V CC, L_CMOS=25 pF f0≤125 MHz/-20 °C to +70 °C) , % V CC, L_CMOS=50 pF, f0≤66.7 MHz/-20 °C to+70 °C) % V CC, L_CMOS=15 pF, f0≤55.0 MHz/-40 °C to +85 °C) % V CC, L_CMOS=30 pF V CC=3.0 V to 3.6 V, f0≤40 MHz) , % V CC, L_CMOS=15 pF V CC=3.0 V to 3.6 V, f0≤125 MHz) , % V CC, L_CMOS=15 pF, V CC=2.7 V to 3.6 V, f0≤66.7 MHz) OE ST 1 5 pF (f0≤66.7 MHz/2.7 to 3.6 V) 15 pF (f0≤125 MHz/3.0 to 3.6 V) 30 pF (f0≤40 MHz/3.0 to 3.6 V) 5 TTL + 15 pF (f0≤90 MHz/-20 to+70 °C) 15 pF (f0≤125 MHz/-20 °C to +70 °C) 25 pF (f0≤66.7 MHz/-20 °C to+70 °C) 1 5 pF (f0≤125 MHz/-20 °C to+70 °C) 25 pF (f0≤90 MHz/-20 °C to+70 °C) 50 pF (f0≤66.7 MHz/-20 °C to+70 °C) 1 5 pF (f0≤66.7 MHz/2.7 to 3.6 V) 15 pF (f0≤125 MHz/3.0 to 3.6 V) 30 pF (f0≤40 MHz/3.0 to3.6 V) 1 5 pF (f0≤125 MHz/-20 °C to +70 °C ) 25 pF (f0≤66.7 MHz/-20 °C to+70 °C) 5TTL + 15 pF (f0≤ 9 0 MHz/-20 °C to +70 °C) 15 pF (f0≤40 MHz/-40 °C to +85 °C) OE ST 2.0 ns Max. (0.8 V to 2.0 V,L_CMOS or L_TTL=Max.) 4.0 ns Max. (0.4 V to 2.4 V,L_CMOS or L_TTL=Max.) 3.0 ns Max. (20 % V CC to 80 % V CC,L_CMOS ≤25) 4.0 ns Max. (20 % V CC to 80 % V CC,L_CMOS=Max.) 45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF, f0≤66.7 MHz/-20 °C to+70 °C) 40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF, f0≤90.0 MHz/-20 °C to+70 °C) ↑ (1.4 V,L_CMOS=25 pF, f0≤66.7 MHz/-20 °C to +70 °C) ↑ (1.4 V,L_CMOS=15 pF, f0≤125 MHz/-20 °C to +70 °C) 45 % to 55 %(50 40 % to 60 %(50 ↑ (50 ↑ (50 % V CC, L _CMOS=25 pF f0≤66.7 MHz/-20 °C to +70 °C) , % V CC, L_CMOS=15 pF f0≤125 MHz/-20 °C to +70 °C) , % V CC, L_CMOS=25 pF, f0≤90 MHz/-20 °C to +70 °C) % V CC, L_CMOS=50 pF, f0≤50 MHz/-20 °C to +70 °C) OE ST SG-8002JC (SOJ 4-pin) PH SH PC Ma x. OE ST 28 mA SC Ma x. PT ST SG-8002JF (SOJ 4-pin) 45 mA PH Ma x. 3.0 V to 3.6 V (2.7 V to 3.6 V) 3.0 ns Max. 45 % to 55 %(50 % V CC, L_CMOS=30 pF V CC=3.0 V to 3.6 V, , (20 % V CC to 80 % V CC ,L_CMOS ≤15) 40 % to 60 %(50 % V CC, L_CMOS=15 pF V CC=3.0 V to 3.6 V, , 4.0 ns Max. ↑ (50 % V CC, L_CMOS=15 pF, V CC=2.7 V to 3.6 V, (20 % V CC to 80 % V CC ,L_CMOS=Max.) 45 2.0 ns Max. 40 (0.8 V to 2.0 V,L_CMOS ≤25) ↑ 4.0 ns Max. ↑ (0.4 V to 2.4 V,L_CMOS or L_TTL=Max.) ↑ 45 3.0 ns Max. 40 (20 % V CC to 80 % V CC,L_CMOS ≤25) ↑ 4.0 ns Max. ↑ (20 % V CC to 80 % V CC,L_CMOS=Max.) ↑ 3.0 ns Max. (20 % V CC to 80 % V CC,L_CMOS ≤15) 4.0 ns Max. (20 % V CC to 80 % V CC,L_CMOS=Max.) 2.0 ns Max. (0.8 V to 2.0 V,L_TTL=Max.) 4.0 ns Max. (0.4 V to 2.4 V,L_TTL=Max.) f0≤40 MHz) OE f0≤125 MHz) f0≤66.7 MHz) ST OE ST 4.5 V to 5.5 V 1 5 pF 25 pF 50 pF 15 pF SH PC SC PT ST 40 mA SG-8002CE (SON) Ma x. 4.5 V to 5.5 V 28 mA Ma x. (f0≤125 MHz/-20 °C to+70 °C ) (f0≤90 MHz/-20 °C to+70 °C) (f0≤50 MHz/-20 °C to+70 °C) (f0≤40 MHz/-40 °C to+85 °C) % to 55 %(1.4 V, L_TTL=5 TTL+15 pF, f0≤66.7 MHz/-20 °C to+70 °C) % to 60 %(1.4 V, L_TTL=5 TTL+15 pF, f0≤90 MHz/-20 °C to +70 °C) (1.4 V, L_CMOS=25 pF, f0≤66.7 MHz/-20 °C to +70 °C) (1.4 V, L_CMOS=15 pF, f0≤125 MHz/-20 °C to +70 °C) (1.4 V, L_CMOS=15 pF, f0≤40 MHz/-40 °C to +85 °C) % to 55 %(50 % V CC, L_CMOS=25 pF f0≤66.7 MHz/-20 °C to +70 °C) , % to 60 %(50 % V CC, L_CMOS=25 pF f0≤90.0 MHz/-20 °C to +70 °C) , (50 % V CC, L_CMOS=50 pF, f0≤50.0 MHz/-20 °C to+70 °C) (50 % V CC, L_CMOS=15 pF, f0≤125 MHz/-20 °C to+70 °C) (50 % V CC, L_CMOS=15 pF, f0≤40 MHz/-40 °C to+85 °C) OE ST 3.0 V to 3.6 V 15 pF(f0≤125 MHz/3.0 to 3.6 V) (2.7 V to 3.6 V) 30 pF(f0≤40 MHz/3.0 to 3.6 V) 1 5 pF(f0≤66.7 MHz/2.7 to 3.6 V) 45 % to 55 %(50 % V CC, CL=30 pF, V CC=3.0 V to 3.6 V, f0≤40 MHz) 40 % to 60 %(50 % V CC, CL=15 pF, V CC=3.0 V to 3.6 V, f0≤125 MHz) ↑ (50 % V CC, CL=15 pF, V CC=2.7 V to 3.6 V, f0≤66.7 MHz) 45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF, f0≤66.7 MHz/-20 °C to +70 °C) ↑ (1.4 V, L_TTL=5 TTL+15 pF, f0≤27.0 MHz/-40 °C to + 85 °C) 40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF, f0≤125 MHz/-20 °C to +70 °C) % to 55 %(50 (50 % to 60 %(50 % to 55 %(50 % to 60 %(50 (50 % V CC, L_CMOS=25 pF f0≤66.7 MHz/-20 °C to +70 °C) , % V CC, L_CMOS=25 pF, f0≤27.0 MHz/-40 °C to + 85 °C) % V CC, L_CMOS=15 pF f0≤125 MHz/-20 °C to +70 °C) , % V CC, L_CMOS=15 pF V CC=3.0 V to 3.6 V, f0≤40 MHz) , % V CC, L_CMOS=15 pF V CC=3.0 V to 3.6 V, f0≤125 MHz) , % V CC, L_CMOS=15 pF, V CC=2.7 V to 3.6 V, f0≤66.7 MHz) OE ST 5 TTL+15 pF (f0≤125 MHz/-20 °C to + 70 °C) 5 TTL+15 pF (f0≤27 MHz/-40 °C to +85 °C ) 1 5 pF (f0≤125 MHz/-20 °C to +70 °C ) 25 pF (f0≤100 MHz/-20 °C to+70 °C ) 25 pF (f0≤27 MHz/-40 °C to +85 °C ) OE ST PH SH PC 28 mA SC Ma x. 3.0 V to 3.6 V 1 5 pF (f0≤66.7 MHz/2.7 to 3.6 V) (2.7 V to 3.6 V) 15 pF (f0≤125 MHz/3.0 to 3.6 V) 45 3.0 ns Max. ↑ (20 % V CC to 80 % V CC ,L_CMOS=Max.) 40 3.0 ns Max. 45 (20 % V CC to 80 % V CC, 40 L_CMOS=Max.) ↑ OE ST OE ST ►TABLE OF FREQUENCY RANGE Model PT/ ST PH/ SH PC/SC PH/ SH SG-8002LB PC/ SC PT/ ST PH/ SH PC SC PT/ ST PH/ SH PC/ SC PT/ ST PH/ SH PC/ SC 3.3 V±0.3 V 4.5 V to 5.5 V 3.0 V to 3.6 V (2.7 V to 3.6 V) 4.5 V to 5.5 V 3.0 V to 3.6 V (2.7 V to 3.6 V) 4.5 V to 5.5 V 3.0 V to 3.6 V (2.7 V to 3.6 V) Supply voltage 4.5 V to 5.5 V 3.0 V to 3.6 V (2.7 V to 3.6 V) 5.0 V±0.5 V Frequency tolerance OperatingTemperature B,C M B,C,M B,C M,L B,C,M,L B,C M B,C,M B,C M B,C,M B C B C Frequency 1 M Hz 1.0 MH z 1.0 MH z 1.0 MH z *2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz 1.0 MH z 1.0 MH z 1.0 MH z 1.0 MH z 1.0 MH z 1.0 MH z *2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz 1.0 MH z 1.0 MH z 1.0 MH z 1.0 MH z 1.0 MH z *2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz 55 MH z 125 MH z *2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz 125 MH z 125 MH z 125 MH z 27 MH z 125 MH z *2.7 V to 3.6 V : 1.0 MHz to 66.7 MHz 125 MH z 40 MH z 125 MH z 80 MH z 50 MHz 27 MH z 100 MHz 125 MHz 125 MH z 125 MH z SG-8002CE SG-8002JF SG-8002CA SG-8002JA SG-8002DB SG-8002DC SG-8002JC Frequency tolerance : B:±50×10-6(-20 °C to +70 °C ), C:±100×10-6 (-20 °C to +70 °C ), M:±100×10-6 (-40 °C to +85 °C ), L:±50×10-6 (-40 °C to +85 °C ) http://www.epsontoyocom.co.jp C rystal Crystal oscillator Epson Toyocom SG / HG-8002 series_ Jitter specifications and characteristics chart ■PLL-PLL connection Because we use a PLL technology, there are a few cases that the jitter value will increase when SG-8002 is connected to another PLL-oscillator. In our experience, we are unable to recommend these products for the applications such as telecom carrier use or analog video clock use. Please be careful checking in advance for these application (Jitter specification is Max.250 ps/CL= 15 pF) Jitter Specifications Model PT / P H ST / SH SC / PC Supply Voltage 5.0 V ±0.5 V Peak to peak 3.3 V ±0.3 V Cycle to cycle Peak to peak Jitter Item Cycle to cycle Specifications 150 ps Max. 200 ps Max. 200 ps Max. 250 ps Max. 200 ps Max. 250 ps Max. Remarks 33 MHz ≤ f 0 ≤ 125 MHz, L_CMOS=15 pF 1.0 MHz ≤ f 0 < 33 MHz, L_CMOS=15 pF 33 MHz ≤ f 0 ≤ 125 MHz, L_CMOS=15 pF 1.0 MHz ≤ f 0 < 33 MHz, L_CMOS=15 pF 1.0 MHz ≤ f 0 ≤ 125 MHz, L_CMOS=15 pF 1.0 MHz ≤ f 0 ≤ 125 MHz, L_CMOS=15 pF ■Remarks on noise management for power supply line We do not recommend inserting filters or other devices in the power supply line as the counter measure of EMI noise reduction. This device insertion might cause high-frequency impedance high in the power supply line and it affects oscillator stable drive. When this measure is required, please evaluate circuitry and device behavior in the circuit and verify that it will not affect oscillation. Start up time (0 % VCC to 90 % VCC) of power source should be more than 150 µs. ■SG-8002 series Characteristics chart 50 40 I CC(mA) 30 20 10 0 50 40 I_dis (mA) 30 20 10 0 50 40 Symmetry (%) I_std (µA) 30 20 10 2.5 3.0 3.5 4.0 4.5 5.0 VCC (V) 5.5 6.0 20 40 60 80 1 00 120 140 Frequency(MHz) Stand-by Current 20 40 60 80 100 120 1 40 Frequency(MHz) Current consumption ( VCC=5.0V) 60 Symmetry (%) 55 50 45 40 0 60 Symmetry (%) 55 50 15 pF 50 pF Symmetry 5.0 V CMOS Level 2 5 pF 3.0 Output Rise time (CMOS Level) 4 .5 V 5.0 V 5 .5 V 2.5 Rise time (ns) 15 pF 3 .0 V 3 .3 V 3 .6 V 2.7 V 2.0 1 .5 20 40 60 80 100 120 140 Frequency(MHz) 1.0 10 15 20 25 30 35 40 45 50 55 Disable Current (VCC=5.0V) Symmetry 3.3 V CMOS Level 3.0 30 pF Load capacitance (pF) Output Fall time (CMOS Level) 3 .0 V 3.3 V 3 .6 V 4.5 V 5 .0 V 5.5 V Fall Time (ns ) 2.5 45 40 0 20 40 60 80 100 120 140 Frequency(MHz) 2.0 2 .7 V 1.5 60 55 50 45 40 0 Symmetry 5.0V TTL Level 1.0 10 15 20 25 30 35 40 45 Load capacitance (pF) 5 0 55 25 pF 15 pF 2.0 Rise Time (ns) 1 .5 1 .0 Output Rise time (TTL Level) 4.5 V 5 .0 V 5.5 V 20 40 60 80 100 120 140 F requency(MHz) 10 2.0 Fall Time (ns) Additional Value (mA) Output load vs. Additional Current consumption 20 V CC =5.0 V 18 2 5 pF 16 14 50 pF 12 15 pF 10 3 0 pF 8 6 4 2 Voltage coefficient [ VCC vs I_dis,I_std ] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2.5 I_dis(Va)=Times(Va)×I_dis(5.0V) I_std(Va)=Times(Va)×I_std(5.0V) 15 20 25 Load capacitance (pF) Output Fall time (TTL Level) 30 Times 1.5 4 .5 V 5.0 V 5 .5 V 1.0 0 20 40 60 80 100 120 1 40 Frequency(MHz) 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VCC (V) 10 15 20 25 Load capacitance (pF) 30 http://www.epsontoyocom.co.jp “QMEMS” EPSON TOYOCOM In order to meet customer needs in a rapidly advancing digital, broadband and ubiquitous society, we are committed to offering products that are one step ahead of the market and a rank above the rest in quality. To achieve our goals, we follow a “3D (three device) strategy” designed to drive both horizontal and vertical growth. We will to grow our three device categories of “Timing Devices”, ”Sensing Devices” and “Optical Devices”, and expand vertical growth through a combination of products from these categories. A Quartz MEMS is any high added value quartz device that exploits the characteristics of quartz crystal material but that is produced using MEMS (micro-electro-mechanical system) processing technology. Market needs are advancing faster than previously imagined toward smaller, more stable crystal products, but we will stay ahead of the curve by rolling out products that exceed market speed and quality requirements. We want to further accelerate the 3D strategy by QMEMS. Quartz devices have become crucial in the network environment where products are increasingly intended for broadband, ubiquitous applications and where various types of terminals can transfer information almost immediately via LAN and WAN on a global scale. Epson Toyocom Corporation addresses every single aspect within a network environment. The new corporation offers “Digital Convergence” solutions to problems arising with products for consumer use, such as, core network systems and automotive systems. PROMOTION OF ENVIRONMENTAL MANAGEMENT SYSTEM CONFORMING TO INTERNATIONAL STANDARDS At Epson Toyocom, all environmental initiatives operate under ISO 14000 is an international standard for environmental management the Plan-Do-Check-Action(PDCA) cycle designed to achieve that was established by the International Standards Organization in 1996 continuous improvements. The environmental management against the background of growing concern regarding global warming, system (EMS) operates under the ISO 14001 environmental destruction of the ozone layer and global deforestation management standard. All of our major manufacturing and non-manufacturing sites,in Japan and overseas, completed the acquisition of ISO 14001 certification. In the future, new group companies will be expected to acquire the certification around the third year of operations. WORKING FOR HIGH QUALITY In order provide high quality and reliable products and services than meet customer needs, Epson Toyocom made early efforts towards obtaining ISO9000 series certification and has acquired ISO9001 for all business establishments in Japan and abroad. We have also acquired ISO/TS 16949 certification that is requested strongly by major automotive manufacturers as standard. QS-9000 is an enhanced standard for quality assurance systems formulated by leading U.S. automobile manufacturers based on the international ISO 9000 series. ISO/TS 16949 is a global standard based on QS-9000, a severe standard corresponding to the requirements from the automobile industry. ►Explanation of the mark that are using it for the catalog ►Pb free. ►Complies with EU RoHS directive. ►Pb free terminal designed. Contains Pb in products exempted by RoHS directive. (Contains Pb in sealing glass, high melting temperature type solder or other.) ►Complies with EU RoHS directive. ►The products have been designed for high reliability applications such as Automotive. Notice ●This material is subject to change without notice. ●Any part of this material may not be reproduced or duplicated in any form or any means without the written permission of Epson Toyocom. ●The information, applied circuitry, programming, usage, etc., written in this material is intended for reference only. Epson Toyocom does not assume any liability for the occurrence of infringing on any patent or copyright of a third party. This material does not authorize the licensing for any patent or intellectual copyrights. ●Any product described in this material may contain technology or the subject relating to strategic products under the control of the Foreign Exchange and Foreign Trade Law of Japan and may require an export license from the Ministry of International Trade and Industry or other approval from another government agency. ●You are requested not to use the products (and any technical information furnished, if any) for the development and/or manufacture of weapon of mass destruction or for other military purposes. You are also requested that you would not make the products available to any third party who may use the products for such prohibited purposes. ●These products are intended for general use in electronic equipment. When using them in specific applications that require extremely high reliability, such as the applications stated below, you must obtain permission from Epson Toyocom in advance. / Space equipment (artificial satellites, rockets, etc.) / Transportation vehicles and related (automobiles, aircraft, trains, vessels, etc.) / Medical instruments to sustain life / Submarine transmitters / Power stations and related / Fire work equipment and security equipment / traffic control equipment / and others requiring equivalent reliability. ● In this new crystal master for Epson Toyocom, product codes and markings will remain as previously identified prior to the merger. Due to the on-going strategy of gradual unification of part numbers, please review product codes and markings, as they will change during the course of the coming months. We apologize for the inconvenience, but we will eventually have a unified part numbering system for Epson Toyocom that will be user friendly.