X1G0056010015

Crystal oscillator CRYSTAL OSCILLATOR (Programmable) OUTPUT: CMOS Product Number (please contact us) SG-8101CA: X1G005191xxxx00 SG-8101CB: X1G005201xxxx00 SG-8101CE: X1G005211xxxx00 SG-8101CG: X1G005181xxxx00 SG – 8101series • Frequency range : 0.67 MHz to 170 MHz (1 ppm Step) • Supply voltage : 1.62 V to 3.63 V • Function : Output enable (OE) or Standby (ST ¯¯) • Frequency tolerance, operating temperature: ±15 ppm (-40 ºC to +85 ºC) ±20 ppm, ±50 ppm (-40 ºC to +105 ºC) • Package ：2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 (mm) • PLL technology to enable short lead time • Available field oscillator programmer “SG-Writer II” CG CE CB CA Specifications (characteristics) Item Symbol Supply voltage VCC Output frequency range Storage temperature Operating temperature Specifications 1.80 V Typ. 2.50 V Typ. fo 0.67 MHz to 170 MHz -40 ºC to +125 ºC Storage as single product. -40 ºC to +85 ºC T_use - -40 ºC to +105 ºC f_tol - B: ±15 × 10-6 T_use = -40 ºC to +85 ºC C: ±20 × 10-6 T_use = -40 ºC to +105 ºC J: ±50 × 10-6 3.2 mA Max. Current consumption ICC 3.3 mA Max. 2.7 mA Typ. 5.5 mA Max. 5.8 mA Max. 4.7 mA Typ. Output disable current I_dis Standby current I_std Symmetry SYM T_use = -40 ºC to +105 ºC 3.4 mA Max. 3.5 mA Max. T_use = +105 ºC 2.9 mA Typ. 3.0 mA Typ. T_use = +25 ºC 6.7 mA Max. 8.1 mA Max. T_use = +105 ºC 5.7 mA Typ. 6.8 mA Typ. T_use = +25 ºC Rise and Fall time 3.2 mA Max. 3.3 mA Max. 3.5 mA Max. OE = GND, fo = 170 MHz 1.0 μA Max. 1.5 μA Max. 2.5 μA Max. T_use = +105 ºC 0.3 μA Typ. 0.4 μA Typ. 0.5 μA Typ. 1.1 μA Typ. T_use = +25 ºC 45 % to 55 % VOH 90 % VCC Min. VOL 10 % VCC Max. 70 % VCC Min. VIL 30 % VCC Max. tr/tf Slow fo ≤ 40 MHz t_stp Enable Time Resume Time t_sta 1 μs Max. t_res 3 ms Max. 1 μs Max. t_str f_aging OE or ST ¯¯ fo > 40 MHz Disable Time Frequency aging - 6.0 ns Max. 10.0 ns Max. Start-up time IOH/IOL Conditions [mA] Rise/Fall time VCC *A *B *C *D -2.5 -3.5 -4.0 -5.0 Default (fo > 40 MHz), IOH Fast IOL 2.5 3.5 4.0 5.0 IOH -1.5 -2.0 -2.5 -3.0 Default (fo ≤ 40 MHz) IOL 1.5 2.0 2.5 3.0 IOH -1.0 -1.5 -2.0 -2.5 Slow IOL 1.0 1.5 2.0 2.5 *A: 1.62 V to 1.98 V, *B: 1.98 V to 2.20 V, *C: 2.20 V to 2.80 V, *D: 2.70 V to 3.63 V 3.0 ns Max. 3.0 ns Max. 3 ms Max. This is included in frequency tolerance specification. ST ¯¯ = GND 50 % VCC Level 15 pF Max. VIH Default Fast No load, fo = 170 MHz 0.9 μA Max. L_CMOS Input voltage No load, fo = 20 MHz 3.2 mA Max. Output voltage (DC characteristics) Output load condition - 1.62 V to 1.98 V 1.98 V to 2.20 V 2.20 V to 2.80 V 2.70 V to 3.63 V T_stg Frequency tolerance*1 Conditions/Remarks 3.30 V Typ. 20 % - 80 % VCC, fo = 0.67 MHz to 170 MHz L_CMOS = 15 pF fo = 0.67 MHz to 20 MHz Measured from the time OE or ST ¯¯ pin crosses 30 % VCC Measured from the time OE pin crosses 70 % VCC Measured from the time ST ¯¯ pin crosses 70 % VCC Measured from the time VCC reaches its rated minimum value, 1.62 V +25 °C, first year *1 Frequency tolerance includes initial frequency tolerance, temperature variation, supply voltage variation, reflow drift, load drift and aging (+25 ºC, 1 year). Pin description Pin Name I/O type OE Input Output enable ST ¯¯ Input Standby GND OUT VCC Power Output Power 1 2 3 4 Ground Clock output Power supply High: Low: High: Low: Function Specified frequency output from OUT pin Out pin is low (weak pull down), only output driver is disabled. Specified frequency output from OUT pin Out pin is low (weak pull down), Device goes to standby mode. Supply current reduces to the least as I_std. Crystal oscillator Product Name SG-8101CG 170.000000MHz T C H P A ① ② ③ ④⑤⑥⑦⑧ ②Package type ④Supply voltage ⑥Operating temperature ⑧ Rise/Fall time CA: 7.0 mm x 5.0 mm T: 1.8 V to 3.3 V Typ. G: -40 °C to +85 °C A: Default H: -40 °C to +105 °C B: Fast CB: 5.0 mm x 3.2 mm ①Model, ②Package type, CE: 3.2 mm x 2.5 mm ③Frequency, ④Supply voltage, CG: 2.5 mm x 2.0 mm ⑤Frequency tolerance, ⑥Operating temperature, ⑦Function, ⑧Rise/Fall time Available combination Frequency tolerance Operating G: -40 °C to +85 °C temperature H: -40 °C to +105 °C External dimensions CA: 7.0 mm x 5.0 mm B: 15 x 10-6 ✓ C: 20 x 10-6 J: 50 x 10-6 ✓ ✓ ⑤Frequency tolerance B: 15 x ⑦Function C: 20 x 10-6 P: Output Enable J: 50 x 10-6 S: Standby CB: 5.0 mm x 3.2 mm B: 15 x 10-6 ✓ C: Slow 10-6 CE: 3.2 mm x 2.5 mm C: 20 x 10-6 J: 50 x 10-6 ✓ ✓ (Unit: mm) B: 15 x 10-6 ✓ C: 20 x 10-6 J: 50 x 10-6 ✓ ✓ CG: 2.5 mm x 2.0 mm B: 15 x 10-6 ✓ Footprint (Recommended) SG-8101CG SG-8101CG SG-8101CE SG-8101CE SG-8101CB SG-8101CB SG-8101CA SG-8101CA C: 20 x 10-6 J: 50 x 10-6 ✓ ✓ (Unit: mm) ■Notes: In order to achieve optimum jitter performance, the 0.1 μF capacitor between VCC and GND should be placed. It is also recommended that the capacitors are placed on the device side of the PCB, as close to the device as possible and connected together with short wiring pattern. Crystal oscillator Specification Graph (Typical supplemental specification. Unless otherwise specified T_use = 25 ºC, L_CMOS = 15 pF) Current Consumption Output disable current ■Notes: Standby current Crystal oscillator Specification Graph (Typical supplemental specification. Unless otherwise specified T_use = 25 ºC, L_CMOS = 15 pF) Phase Jitter RMS Phase Jitter RMS (Integration bandwidth 12 k to 20 MHz) (Integration bandwidth 1.8 M to 20 MHz) 80 50 Vcc = 3.3 V Vcc = 2.5 V Vcc = 1.8 V 40 Phase Jitter-RMS (ps) Phase Jitter-RMS (ps) 70 Vcc = 3.3 V Vcc = 2.5 V Vcc = 1.8 V 60 50 40 30 30 20 10 0 0 20 40 60 80 100 fo (MHz) 120 140 160 180 0 20 40 60 80 100 fo (MHz) 120 140 160 180 Period Jitter RMS 40 Vcc = 1.8 V Period Jitter RMS (ps) Period Jitter RMS (ps) Rise/Fall time = Slow 20 10 Rise/Fall time = Default Rise/Fall time = Fast 30 Rise/Fall time = Slow 20 10 0 20 40 60 80 100 fo (MHz) 120 140 160 180 Rise/Fall time = Fast 30 Rise/Fall time = Slow 20 10 0 0 0 Vcc = 3.3 V Rise/Fall time = Default Rise/Fall time = Fast 30 40 Vcc = 2.5 V Rise/Fall time = Default Period Jitter RMS (ps) 40 0 20 40 60 80 100 fo (MHz) 120 140 160 0 180 20 40 60 80 100 fo (MHz) 120 140 160 180 Vcc = 1.8 3.3 V Rise/Fall time = Default Rise/Fall time = Fast Rise/Fall time = Slow 0 20 40 60 80 100 fo (MHz) 120 140 160 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Vcc = 2.5 3.3 V Rise/Fall time = Default Rise/Fall time = Fast Rise/Fall time = Slow 0 180 Period Jitter Peak - Peak (ps) 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 Period Jitter Peak - Peak (ps) Period Jitter Peak - Peak (ps) Period Jitter Peak-Peak 20 40 60 80 100 fo (MHz) 120 140 160 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 180 Vcc = 3.3 V Rise/Fall time = Default Rise/Fall time = Fast Rise/Fall time = Slow 0 20 40 60 80 100 fo (MHz) 120 140 160 180 Cycle-to-Cycle Jitter Peak-Peak 200 Rise/Fall time = Default 160 Rise/Fall time = Fast 140 Rise/Fall time = Slow 120 100 80 60 40 20 200 Vcc = 2.5 V 180 Rise/Fall time = Default 160 Rise/Fall time = Fast 140 Rise/Fall time = Slow Cycle to Cycle Jitter Peak - Peak (ps) Vcc = 1.8 V 180 Cycle to Cycle Jitter Peak - Peak (ps) Cycle to Cycle Jitter Peak - Peak (ps) 200 120 100 80 60 40 20 0 0 0 ■Notes: 20 40 60 80 100 fo (MHz) 120 140 160 180 Vcc = 3.3 V 180 Rise/Fall time = Default 160 Rise/Fall time = Fast 140 Rise/Fall time = Slow 120 100 80 60 40 20 0 0 20 40 60 80 100 fo (MHz) 120 140 160 180 0 20 40 60 80 100 fo (MHz) 120 140 160 180 Crystal oscillator Specification Graph (Typical supplemental specification. Unless otherwise specified T_use = 25 ºC, L_CMOS = 15 pF, VCC = 3.3 V) Rise/Fall Time (fo = 20 MHz) Rise time L_CMOS = 5 pF 5 4.5 4 Tr/Tf mode = Slow Tr/Tf mode = Default Tr/Tf mode = Fast 4.5 4 3.5 Fall Time(ns) 3.5 Rise Time(ns) Fall time L_CMOS = 5 pF 5 Tr/Tf mode = Slow Tr/Tf mode = Default Tr/Tf mode = Fast 3 3 2.5 2.5 2 2 1.5 1.5 1 1 0.5 0.5 0 0 1.5 2.0 2.5 3.0 1.5 3.5 2.0 Rise time L_CMOS = 15 pF 5 4 3.5 Tr/Tf mode = Slow Tr/Tf mode = Default Tr/Tf mode = Fast 4.5 4 3.5 3.5 Fall Time(ns) Rise Time(ns) 3.0 Fall time L_CMOS = 15 pF 5 Tr/Tf mode = Slow Tr/Tf mode = Default Tr/Tf mode = Fast 4.5 2.5 Vcc (V) Vcc (V) 3 2.5 3 2.5 2 1.5 2 1.5 1 1 0.5 0.5 0 0 1.5 2.0 2.5 Vcc (V) 3.0 3.5 1.5 2.0 2.5 3.0 3.5 Vcc (V) Harmonics spectrum (fo = 20 MHz) 20 ① 10 ③ ⑤ 0 ⑦ ⑨ ⑪ Power (dBm) -10 -20 -30 -40 -50 -60 -70 -80 0 40 80 120 160 200 240 280 320 360 400 frequency (MHz) Harmonics comparison Normalize to VCC = 3.3V. Normalize to VCC = 3.3V. ■Notes: frequency 0.67 M – 20 MHz 20 M – 40 MHz 40 M – 170 MHz slow See Slow - default See Default See Default See Fast fast See Fast See Fast See Fast Normalize to Rise/Fall time = “Fast”. Crystal oscillator ESD Rating Test items Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) Breakdown voltage 2000 V 250 V 750 V Device Marking (Standard specification) Model Factory Programmed Part Marking Field Programmable Part Marking (Blank Samples) SG-8101CG SG-8101CE SG-8101CB SG-8101CA Simulation Model ・ IBIS Model is available upon request. Please contact us. Information Required: Oscillator operating condition (i.e. Power Supply, Rise/Fall Time, Temperature) Crystal oscillator Device Material & Environmental Information Model Package Dimensions # of Pins SG-8101CG SG-8101CE SG-8101CB SG-8101CA 2.5 x 2.0 x 0.7 mm 3.2 x 2.5 x 1.0 mm 5.0 x 3.2 x 1.1 mm 7.0 x 5.0 x 1.3 mm 4 4 4 4 Reference Weight (Typ.) 13 mg 25 mg 51 mg 143 mg Terminal Material Terminal Plating W W W W Au Au Au Au Complies With EU RoHS Yes Yes Yes Yes Pb Free MSL Rating Peak Temp. (Max) Yes Yes Yes Yes 1 1 1 1 260 °C 260 °C 260 °C 260 °C SMD products Reflow profile(example) The availability of the heat resistance for reflow conditions of JEDEC-STD-020D.01 is judged individually. Please inquire. Temperature[C]  300 TP  ;+260C OVER +255C 250 TL 200 150 ;+217C Tsmax ;+200C Tsmin ;+150C tp;at least 30s Ramp-up rate +3 °C/s Max. tL Ramp-down rate -6 °C/s Max. 60sto150 ts 60sto120s 100 50 0 Time +25CtoPeak 60 120 180 240 300 360 420 480 540 600 660 720 780 Time[s]  Pb free.  Complies with EU RoHS directive. ➢ About the products without the Pb-free mark. Contains Pb in products exempted by EU RoHS directive. (Contains Pb in sealing glass, high melting temperature type solder or other.) Standard Packing Specification SMD products are packed in the shipping carton as below table in accordance with taping standards EIA-481 and IEC-60286 A 4 4 8 8 Marking Marking Standard Packing Quantity & Dimension(Unit mm) Reel Dimension Quantity Model (pcs/Reel) a b W SG-8101CG 3000 Φ180 Φ60 9 SG-8101CE 2000 Φ180 Φ60 9 SG-8101CB 1000 Φ180 Φ60 13 SG-8101CA 1000 Φ254 Φ100 17.5 Career Tape Dimension B C 5.25 8 5.25 8 7.25 12 9.25 16 D 1.15 1.4 1.4 2.3 Direction of Feed (L= Left Direction) L L L L PROMOTION OF ENVIRONMENTAL MANAGEMENT SYSTEM CONFORMING TO INTERNATIONAL STANDARDS At Seiko Epson, all environmental initiatives operate under the Plan-Do-Check-Action (PDCA) cycle designed to achieve continuous improvements. The environmental management system (EMS) operates under the ISO 14001 environmental management standard. All of our major manufacturing and non-manufacturing sites, in Japan and overseas, completed the acquisition of ISO 14001 certification. ISO 14000 is an international standard for environmental management that was established by the International Standards Organization in 1996 against the background of growing concern regarding global warming, destruction of the ozone layer, and global deforestation. WORKING FOR HIGH QUALITY In order provide high quality and reliable products and services than meet customer needs, Seiko Epson made early efforts towards obtaining ISO9000 series certification and has acquired ISO9001 for all business establishments in Japan and abroad. We have also acquired ISO/TS 16949 certification that is requested strongly by major automotive manufacturers as standard. ISO/TS16949 is the international standard that added the sector-specific supplemental requirements for automotive industry based on ISO9001. ►Explanation of the mark that are using it for the catalog ►Pb free. ►Complies with EU RoHS directive. *About the products without the Pb-free mark. Contains Pb in products exempted by EU RoHS directive. (Contains Pb in sealing glass, high melting temperature type solder or other.) ►Designed for automotive applications such as Car Multimedia, Body Electronics, Remote Keyless Entry etc. ►Designed for automotive applications related to driving safety (Engine Control Unit, Air Bag, ESC etc ). Notice • • • • • • This material is subject to change without notice. Any part of this material may not be reproduced or duplicated in any form or any means without the written permission of Seiko Epson. The information about applied data, circuitry, software, usage, etc. written in this material is intended for reference only. Seiko Epson does not assume any liability for the occurrence of customer damage or infringing on any patent or copyright of a third party. This material does not authorize the licensing for any patent or intellectual copyrights. When exporting the products or technology described in this material, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You are requested not to use the products (and any technical information furnished, if any) for the development and/or manufacture of weapon of mass destruction or for other military purposes. You are also requested that you would not make the products available to any third party who may use the products for such prohibited purposes. These products are intended for general use in electronic equipment. When using them in specific applications that require extremely high reliability, such as the applications stated below, you must obtain permission from Seiko Epson in advance. / Space equipment (artificial satellites, rockets, etc.) / Transportation vehicles and related (automobiles, aircraft, trains, vessels, etc.) / Medical instruments to sustain life / Submarine transmitters / Power stations and related / Fire work equipment and security equipment / traffic control equipment / and others requiring equivalent reliability. • All brands or product names mentioned herein are trademarks and/or registered trademarks of their respective. Seiko Epson Corporation