F25L32QA-50PAG

ESMT Flash FEATURES Single supply voltage 2.7~3.6V Standard, Dual and Quad SPI (Preliminary) F25L32QA 3V Only 32 Mbit Serial Flash Memory with Dual and Quad Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz / 86MHz/ 100MHz - Fast Read Dual/Quad max frequency: 50MHz / 100MHz (100MHz / 172MHz/ 200MHz equivalent Dual SPI; 200MHz / 344MHz/ 400MHz equivalent Quad SPI) Low power consumption - Active current: 35 mA - Standby current: 30 μ A - Deep Power Down current: 5 μ A Reliability - 100,000 typical program/erase cycles - 20 years Data Retention Program - Byte programming time: 7 μ s (typical) - Page programming time: 1.5 ms (typical) Erase - Chip erase time 25 sec (typical) - Block erase time 1 sec (typical) - Sector erase time 90 ms (typical) Page Programming - 256 byte per programmable page Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over Byte Program operations Lockable 2K bytes OTP security sector SPI Serial Interface - SPI Compatible: Mode 0 and Mode 3 End of program or erase detection Write Protect ( WP ) Hold Pin ( HOLD ) All Pb-free products are RoHS-Compliant ORDERING INFORMATION Product ID F25L32QA –50PAG F25L32QA –86PAG F25L32QA –100PAG F25L32QA –50PHG F25L32QA –86PHG F25L32QA –100PHG Speed 50MHz 86MHz 100MHz 50MHz 86MHz 100MHz Package 8 lead SOIC 8 lead SOIC 8 lead SOIC 16 lead SOIC 16 lead SOIC 16 lead SOIC 200mil 200mil 200mil 300mil 300mil 300mil Comments Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free GENERAL DESCRIPTION The F25L32QA is a 32Megabit, 3V only CMOS Serial Flash memory device. The device supports the standard Serial Peripheral Interface (SPI), and a Dual/Quad SPI. ESMT’s memory devices reliably store memory data even after 100,000 programming and erase cycles. The memory array can be organized into 16,384 programmable pages of 256 byte each. 1 to 256 byte can be programmed at a time with the Page Program instruction. The device also can be programmed to decrease total chip programming time with Auto Address Increment (AAI) programming. The device features sector erase architecture. The memory array is divided into 1024 uniform sectors with 4K byte each; 64 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device. The device has Sector, Block or Chip Erase but no page erase. The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory. Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 1/42 ESMT PIN CONFIGURATIONS (Preliminary) F25L32QA 8-PIN SOIC CE 1 8 VDD SO / SIO1 2 7 HOLD / SIO3 WP / SIO2 3 6 SCK VSS 4 5 SI / SIO0 16-PIN SOIC HOLD / SIO3 VDD 1 2 16 15 SCK SI / SIO0 NC NC 3 4 14 13 NC NC NC NC 5 6 12 11 NC NC CE SO / SIO1 7 8 10 9 VSS WP / SIO2 Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 2/42 ESMT PIN DESCRIPTION Symbol SCK Pin Name Serial Clock Serial Data Input / Serial Data Input Output 0 (Preliminary) F25L32QA Functions To provide the timing for serial input and output operations To transfer commands, addresses or data serially into the device. Data is latched on the rising edge of SCK (for Standard read mode). / Bidirectional IO pin to transfer commands, addresses or data serially into the device on the rising edge of SCK and read data or status from the device on the falling edge of SCK(for Dual/Quad mode). To transfer data serially out of the device. Data is shifted out on the falling edge of SCK (for Standard read mode). / Bidirectional IO pin to transfer commands, addresses or data serially into the device on the rising edge of SCK and read data or status from the device on the falling edge of SCK (for Dual/Quad mode). To activate the device when CE is low. The Write Protect ( WP ) pin is used to enable/disable BPL bit in the status register. / Bidirectional IO pin to transfer commands, addresses or data serially into the device on the rising edge of SCK and read data or status from the device on the falling edge of SCK (for Quad mode). To temporality stop serial communication with SPI flash memory without resetting the device. / Bidirectional IO pin to transfer commands, addresses or data serially into the device on the rising edge of SCK and read data or status from the device on the falling edge of SCK (for Quad mode). To provide power. SI / SIO0 SO / SIO1 Serial Data Output / Serial Data Input Output 1 Chip Enable Write Protect / Serial Data Input Output 2 CE WP / SIO2 HOLD / SIO3 VDD VSS Hold / Serial Data Input Output 3 Power Supply Ground FUNCTIONAL BLOCK DIAGRAM Page Address Latch / Counter High Voltage Generator Memory Array Page Buffer Status Register Byte Address Latch / Counter Y-Decoder Command and Conrol Logic Serial Interface CE SCK SI (SIO0) SO WP HOLD (SIO1) (SIO2) (SIO3) Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 3/42 ESMT SECTOR STRUCTURE (Preliminary) F25L32QA Table 1: F25L32QA Sector Address Table Block Sector 1023 63 : 1008 1007 62 : 992 991 61 : 976 975 60 : 960 959 59 : 944 943 58 : 928 927 57 : 912 911 56 : 896 895 55 : 880 879 54 : 864 863 53 : 848 847 52 : 830 831 51 : 816 Sector Size (Kbytes) 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB Address range 3FF000H – 3FFFFFH : 3F0000H – 3F0FFFH 3EF000H – 3EFFFFH : 3E0000H – 3E0FFFH 3DF000H – 3DFFFFH : 3D0000H – 3D0FFFH 3CF000H – 3CFFFFH : 3C0000H – 3C0FFFH 3BF000H – 3BFFFFH : 3B0000H – 3B0FFFH 3AF000H – 3AFFFFH : 3A0000H – 3A0FFFH 39F000H – 39FFFFH : 390000H – 390FFFH 38F000H – 38FFFFH : 380000H – 380FFFH 37F000H – 37FFFFH : 370000H – 370FFFH 36F000H – 36FFFFH : 360000H – 360FFFH 35F000H – 35FFFFH : 350000H – 350FFFH 34F000H – 34FFFFH : 340000H – 340FFFH 33F000H – 33FFFFH : 330000H – 330FFFH 1 1 0 0 1 1 1 1 0 1 0 0 1 1 0 1 0 1 1 1 0 1 1 0 1 1 0 1 1 1 1 1 1 0 0 0 1 1 1 0 0 1 1 1 1 0 1 0 1 1 1 0 1 1 1 1 1 1 0 0 1 1 1 1 0 1 1 1 1 1 1 0 1 1 1 1 1 1 Block Address A21 A20 A19 A18 A17 A16 Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 4/42 ESMT Block Sector 815 50 : 800 799 49 : 784 783 48 : 768 767 47 : 752 751 46 : 736 735 45 : 720 719 44 : 704 703 43 : 688 687 42 : 672 671 41 : 656 655 40 : 640 639 39 : 624 623 38 : 608 Sector Size (Kbytes) 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB (Preliminary) Table 1: F25L32QA Sector Address Table – Continued I Address range 32F000H – 32FFFFH : 320000H – 320FFFH 31F000H – 31FFFFH : 310000H – 310FFFH 30F000H – 30FFFFH : 300000H – 300FFFH 2FF000H – 2FFFFFH : 2F0000H – 2F0FFFH 2EF000H – 2EFFFFH : 2E0000H – 2E0FFFH 2DF000H – 2DFFFFH : 2D0000H – 2D0FFFH 2CF000H – 2CFFFFH : 2C0000H – 2C0FFFH 2BF000H – 2BFFFFH : 2B0000H – 2B0FFFH 2AF000H – 2AFFFFH : 2A0000H – 2A0FFFH 29F000H – 29FFFFH : 290000H – 290FFFH 28F000H – 28FFFFH : 280000H – 280FFFH 27F000H – 27FFFFH : 270000H – 270FFFH 26F000H – 26FFFFH : 260000H – 260FFFH 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 0 1 1 1 0 1 1 1 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 Block Address A21 A20 A19 A18 F25L32QA A17 1 A16 0 0 1 0 0 1 1 1 0 0 1 0 0 1 1 1 0 0 1 0 0 1 1 1 0 Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 5/42 ESMT Block Sector 607 37 : 592 591 36 : 576 575 35 : 560 559 34 : 544 543 33 : 528 527 32 : 512 511 31 : 496 495 30 : 480 479 29 : 464 463 28 : 448 447 27 : 432 431 26 : 416 415 25 : 400 Sector Size (Kbytes) 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB (Preliminary) Table 1: F25L32QA Sector Address Table – Continued II Address range 25F000H – 25FFFFH : 250000H – 250FFFH 24F000H – 24FFFFH : 240000H – 240FFFH 23F000H – 23FFFFH : 230000H – 230FFFH 22F000H – 22FFFFH : 220000H – 220FFFH 21F000H – 21FFFFH : 210000H – 210FFFH 20F000H – 20FFFFH : 200000H – 200FFFH 1FF000H – 1FFFFFH : 1F0000H – 1F0FFFH 1EF000H – 1EFFFFH : 1E0000H – 1E0FFFH 1DF000H – 1DFFFFH : 1D0000H – 1D0FFFH 1CF000H – 1CFFFFH : 1C0000H – 1C0FFFH 1BF000H – 1BFFFFH : 1B0000H – 1B0FFFH 1AF000H – 1AFFFFH : 1A0000H – 1A0FFFH 19F000H – 19FFFFH : 190000H – 190FFFH 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 0 1 1 1 0 1 1 1 0 1 1 1 1 0 0 0 1 0 0 0 1 0 0 0 1 0 0 0 1 0 0 1 1 0 0 1 Block Address A21 A20 A19 A18 F25L32QA A17 0 A16 1 0 0 1 1 1 0 0 1 0 0 1 1 1 0 0 1 0 0 1 1 1 0 0 1 Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 6/42 ESMT Block Sector 399 24 : 384 383 23 : 368 367 22 : 352 351 21 : 336 335 20 : 320 319 19 : 304 303 18 : 288 287 17 : 272 271 16 : 256 255 15 : 240 239 14 : 224 223 13 : 208 207 12 : 192 Sector Size (Kbytes) 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB (Preliminary) Table 1: F25L32QA Sector Address Table – Continued III Address range 18F000H – 18FFFFH : 180000H – 180FFFH 17F000H – 17FFFFH : 170000H – 170FFFH 16F000H – 16FFFFH : 160000H – 160FFFH 15F000H – 15FFFFH : 150000H – 150FFFH 14F000H – 14FFFFH : 140000H – 140FFFH 13F000H – 13FFFFH : 130000H – 130FFFH 12F000H – 12FFFFH : 120000H – 120FFFH 11F000H – 11FFFFH : 110000H – 110FFFH 10F000H – 10FFFFH : 100000H – 100FFFH 0FF000H – 0FFFFFH : 0F0000H – 0F0FFFH 0EF000H – 0EFFFFH : 0E0000H – 0E0FFFH 0DF000H – 0DFFFFH : 0D0000H – 0D0FFFH 0CF000H – 0CFFFFH : 0C0000H – 0C0FFFH 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 0 0 1 0 0 0 1 0 0 0 1 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 0 Block Address A21 A20 A19 A18 F25L32QA A17 0 A16 0 1 1 1 0 0 1 0 0 1 1 1 0 0 1 0 0 1 1 1 0 0 1 0 0 Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 7/42 ESMT Block Sector 191 11 : 176 175 10 : 160 159 9 : 144 143 8 : 128 127 7 : 112 111 6 : 96 95 5 : 80 79 4 : 64 63 3 : 48 47 2 : 32 31 1 : 16 15 0 : 0 Sector Size (Kbytes) 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB 4KB : 4KB (Preliminary) Table 1: F25L32QA Sector Address Table – Continued IV Address range 0BF000H – 0BFFFFH : 0B0000H – 0B0FFFH 0AF000H – 0AFFFFH : 0A0000H – 0A0FFFH 09F000H – 09FFFFH : 090000H – 090FFFH 08F000H – 08FFFFH : 080000H – 080FFFH 07F000H – 07FFFFH : 070000H – 070FFFH 06F000H – 06FFFFH : 060000H – 060FFFH 05F000H – 05FFFFH : 050000H – 050FFFH 04F000H – 04FFFFH : 040000H – 040FFFH 03F000H – 03FFFFH : 030000H – 030FFFH 02F000H – 02FFFFH : 020000H – 020FFFH 01F000H – 01FFFFH : 010000H – 010FFFH 00F000H – 00FFFFH : 000000H – 000FFFH 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 1 0 0 0 1 0 0 1 0 0 0 1 0 0 0 1 0 0 0 1 0 Block Address A21 A20 A19 A18 F25L32QA A17 1 A16 1 1 0 0 1 0 0 1 1 1 0 0 1 0 0 1 1 1 0 0 1 0 0 Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 8/42 ESMT STATUS REGISTER (Preliminary) F25L32QA The software status register provides status on whether the flash memory array is available for any Read or Write operation, whether the device is Write enabled, and the state of the memory Write protection. During an internal Erase or Program operation, the status register may be read only to determine the completion of an operation in progress. Table 2 describes the function of each bit in the software status register. Table 2: Software Status Register Bit Name Function 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 1 = Device is memory Write enabled 0 = Device is not memory Write enabled Indicate current level of block write protection (See Table 3) Indicate current level of block write protection (See Table 3) Indicate current level of block write protection (See Table 3) Reserved for future use Auto Address Increment Programming status 1 = AAI programming mode 0 = Page Program mode 1 = BP2,BP1,BP0 are read-only bits 0 = BP2,BP1,BP0 are read/writable Reserved for future use 1 = Quad enabled 0 = Quad disabled Reserved for future use Default at Power-up 0 0 1 1 1 0 0 0 0 0 0 Read/Write Status Register - 1 0 1 2 3 4 5 6 7 BUSY WEL BP0 BP1 BP2 RESERVED AAI BPL R R R/W R/W R/W N/A R R/W N/A R/W N/A Status Register - 2 8 RESERVED 9 QE 10~15 RESERVED Note: 1. Only BP0, BP1, BP2, BPL and QE are writable. 2. All register bits are volatility 3. All area are protected at power-on (BP2=BP1=BP0=1) WRITE ENABLE LATCH (WEL) The Write-Enable-Latch bit indicates the status of the internal memory Write Enable Latch. If this bit is set to “1”, it indicates the device is Write enabled. If the bit is set to “0” (reset), it indicates the device is not Write enabled and does not accept any memory Write (Program/ Erase) commands. This bit is automatically reset under the following conditions: • • • • • • • • Power-up Write Disable (WRDI) instruction completion Page Program instruction completion Auto Address Increment (AAI) Programming is completed and reached its highest unprotected memory address Sector Erase instruction completion Block Erase instruction completion Chip Erase instruction completion Write Status Register instructions BUSY The BUSY bit determines whether there is an internal Erase or Program operation in progress. A “1” for the BUSY bit indicates the device is busy with an operation in progress. A “0” indicates the device is ready for the next valid operation. Auto Address Increment (AAI) The Auto-Address-Increment-Programming-Status bit provides status on whether the device is in AAI Programming mode or Page Program mode. The default at power up is Page Program mode. Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 9/42 ESMT TOP Protection Level 0 Upper 1/64 Upper 1/32 Upper 1/16 Upper 1/8 Upper 1/4 Upper 1/2 All Blocks (Preliminary) Table 3: F25L32QA Block Protection Table F25L32QA Status Register Bit BP2 0 0 0 0 1 1 1 1 BP1 0 0 1 1 0 0 1 1 BP0 0 1 0 1 0 1 0 1 Protected Memory Area Block Range None Block 63 Block 62~63 Block 60~63 Block 56~63 Block 48~63 Block 32~63 Block 0~63 Address Range None 3F0000H –3FFFFFH 3E0000H –3FFFFFH 3C0000H –3FFFFFH 380000H –3FFFFFH 300000H –3FFFFFH 200000H –3FFFFFH 000000H –3FFFFFH Block Protection (BP2, BP1, BP0) The Block-Protection (BP2, BP1, BP0) bits define the size of the memory area, as defined in Table 3, to be software protected against any memory Write (Program or Erase) operations. The Write Status Register (WRSR) instruction is used to program the BP2, BP1, BP0 bits as long as WP is high or the BlockProtection-Look (BPL) bit is 0. Chip Erase can only be executed if Block-Protection bits are all 0. After power-up, BP2, BP1 and BP0 are set to1. Block Protection Lock-Down (BPL) WP pin driven low (VIL), enables the Block-ProtectionLock-Down (BPL) bit. When BPL is set to 1, it prevents any further alteration of the BPL, BP2, BP1, and BP0 bits. When the WP pin is driven high (VIH), the BPL bit has no effect and its value is “Don’t Care”. After power-up, the BPL bit is reset to 0. Quad Enable (QE) When the Quad Enable bit is reset to “0” (factory default), WP and HOLD pins are enabled. When QE pin is set to “1”, Quad SIO2 and SIO3 are enabled. (The QE should never be set to “1” during standard and Dual SPI operation if the WP and HOLD pins are tied directly to the VDD or VSS.) Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 10/42 ESMT HOLD OPERATION (Preliminary) F25L32QA HOLD pin is used to pause a serial sequence underway with the SPI flash memory without resetting the clocking sequence. To activate the HOLD mode, CE must be in active low state. The HOLD mode begins when the SCK active low state coincides with the falling edge of the HOLD signal. The HOLD mode ends when the HOLD signal’s rising edge coincides with the SCK active low state. If the falling edge of the HOLD signal does not coincide with the SCK active low state, then the device enters Hold mode when the SCK next reaches the active low state. Similarly, if the rising edge of the HOLD signal does not coincide with the SCK active low state, then the device exits in Hold mode when the SCK next reaches the active low state. See Figure 1 for Hold Condition waveform. Once the device enters Hold mode, SO will be in high impedance state while SI and SCK can be VIL or VIH. If CE is driven active high during a Hold condition, it resets the internal logic of the device. As long as HOLD signal is low, the memory remains in the Hold condition. To resume communication with the device, HOLD must be driven active high, and CE must be driven active low. See Figure 23 for Hold timing. The HOLD function is only available for Standard SPI and Dual SPI operation, not during Quad SPI because this pin is used for SIO3 when the QE bit of Status Register-2 is set for Quad I/O. S CK HO L D A ctive Ho ld A ctive Ho ld A ctive Figure 1: HOLD Condition Waveform WRITE PROTECTION F25L32QA provides software Write Protection. The Write-Protect pin ( WP ) enables or disables the lock-down function of the status register. The Block-Protection bits (BP2, BP1, BP0, and BPL) in the status register provide Write protection to the memory array and the status register. When the QE bit of Status Register-2 is set for Quad I/O, the WP pin function is not available since this pin is used for SIO2. See Table 4 for Block-Protection description. Table 4: Conditions to Execute Write-Status- Register (WRSR) Instruction WP BPL 1 0 X Execute WRSR Instruction Not Allowed Allowed Allowed L L H Write Protect Pin ( WP ) The Write-Protect ( WP ) pin enables the lock-down function of the BPL bit (bit 7) in the status register. When WP is driven low, the execution of the Write Status Register (WRSR) instruction is determined by the value of the BPL bit (see Table 4). When WP is high, the lock-down function of the BPL bit is disabled. Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 11/42 ESMT INSTRUCTIONS (Preliminary) F25L32QA Instructions are used to Read, Write (Erase and Program), and configure the F25L32QA. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Page Program, Auto Address Increment (AAI) Programming, Write Status Register, Sector Erase, Block Erase, or Chip Erase instructions, the Write Enable (WREN) instruction must be executed first. The complete list of the instructions is provided in Table 5. All instructions are synchronized off a high to low transition of CE . Inputs will be accepted on the rising edge of SCK starting with the most significant bit. CE must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read ID, Read Status Register, Read Electronic Signature instructions). Any low to high transition on CE , before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to the standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first. Table 5: Device Operation Instruction Operation Read Fast Read Fast Read Dual Output12,13 Fast Read Dual I/O12, 14 Fast Read Quad 12, 15 Output Fast Read Quad I/O12, 16 Sector Erase4 (4K Byte) Block Erase4, (64K Byte) Chip Erase Page Program (PP) Quad Page Program17 50MHz Auto Address Increment 5 word programming (AAI) Mode Bit Reset18 Deep Power Down (DP) ~ Read Status Register-1 (RDSR-1) 6 Read Status Register-2 (RDSR-2) 6 100MHz Enable Write Status 7 Register (EWSR) Write Status Register (WRSR) 7 Write Enable (WREN) 10 Write Disable (WRDI)/ Exit secured OTP mode Enter secured OTP mode (ENSO) Release from Deep Power Down (RDP) Read Electronic Signature (RES) 8 RES in secured OTP mode & not lock down RES in secured OTP mode & lock down Max. Freq Bus Cycle 1~3 3 4 SIN SOUT SIN SOUT A15-A8 Hi-Z A7-A0 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z A15-A8 A7-A0 A7-A0, M7-M0 DOUT0~1 A15-A8 A7-A0 DIN0 X, DOUT0~1 DOUT2~6 A15-A8 Hi-Z A7-A0 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z A15-A8 - 1 2 SIN SOUT SIN SOUT 33 MHz 03H Hi-Z A23-A16 Hi-Z 0BH Hi-Z A23-A16 Hi-Z 3BH A23-A16 BBH A23-A8 6BH A23-A16 EBH A23-A0, M7-M0 20H Hi-Z A23-A16 Hi-Z D8H Hi-Z A23-A16 Hi-Z 60H / Hi-Z C7H 02H Hi-Z A23-A16 32H ADH FFH B9h 05H 35H 50H 01H 06H 04H B1H ABH ABH ABH ABH Hi-Z 5 SIN X X SOUT DOUT0 X X cont. X cont. Hi-Z 6 SIN SOUT X DOUT1 X DOUT0 DOUT0~1 DOUT0~3 DIN1 Hi-Z N SIN SOUT X X cont. cont. cont. - cont. - Hi-Z A7-A0 Hi-Z A7-A0 A23-A16 Hi-Z Hi-Z DOUT (S7-S0) DOUT (S15-S8) Hi-Z X X X A15-A8 A15-A8 - DIN0~3 DIN0 X X X Hi-Z 15H 35H 75H DIN4~7 DIN1 Hi-Z - Up to 256 Hi-Z bytes Up to 256 bytes - Hi-Z A23-A16 Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z FFH X X DIN (S7-S0) X X X Hi-Z A7-A0 Hi-Z -. -. X X X X X X DIN Hi-Z (S15-S8) X X X X X X Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 12/42 ESMT Operation Jedec Read ID 9 (JEDEC-ID) Read ID (RDID) 11 Max. Freq 1 SIN 9FH 50MHz 90H SOUT Hi-Z Hi-Z Hi-Z (Preliminary) Table 5: Device Operation Instruction - Continued Bus Cycle 1~3 4 SOUT SIN SOUT 40H Hi-Z X 00H 01H 16H Hi-Z Hi-Z - F25L32QA 2 SIN X 00H SOUT 8CH Hi-Z SIN X 00H - 3 5 SIN X X SOUT 8CH 15H SIN X X - 6 SOUT 15H 8CH SIN - N SOUT - Enable SO to output ~ 70H RY/ Status during AAI 100MHz (EBSY) Disable SO to output 80H RY/ Status during AAI (DBSY) Hi-Z - - - - - - - - - - - - Notes: 1. 2. 3. 4. 5. 6. 7. Operation: SIN = Serial In, SOUT = Serial Out, Bus Cycle 1 = Op Code X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary); cont. = continuous One bus cycle is eight clock periods. Sector Earse addresses: use AMS -A12, remaining addresses can be VIL or VIH Block Earse addresses: use AMS -A16, remaining addresses can be VIL or VIH To continue programming to the next sequential address location, enter the 8-bit command, followed by the data to be programmed. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE . The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both instructions effective. 8. 9. The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE . The JEDEC-Read-ID is output first byte 8CH as manufacture ID; second byte 40H as top memory type; third byte 16H as memory capacity. 10. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN. 11. The Manufacture ID and Device ID output will repeat continuously until CE terminates the instruction. 12. Dual and Quad commands use bidirectional IO pins. DOUT and cont. are serial data out; others are serial data in. 13. Dual output data: IO0 = (D6, D4, D2, D0), (D6, D4, D2, D0) IO1 = (D7, D5, D3, D1), (D7, D5, D3, D1) DOUT0 DOUT1 (A6, A4, A2, A0, M6, M4, M2, M0) (A7, A5, A3, A1, M7, M5, M3, M1) Bus Cycle-3 14. M7-M0: Mode bits. Dual input address: IO0 = (A22, A20, A18, A16, A14, A12, A10, A8) IO1 = (A23, A21, A19, A17, A15, A13, A11, A9) Bus Cycle-2 15. Quad output data: IO0 = (D4, D0), (D4, D0), (D4, D0), (D4, D0) IO1 = (D5, D1), (D5, D1), (D5, D1), (D5, D1) IO2 = (D6, D2), (D6, D2), (D6, D2), (D6, D2) IO3 = (D7, D3), (D7, D3), (D7, D3), (D7, D3) DOUT0 DOUT1 DOUT2 DOUT3 Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 13/42 ESMT (Preliminary) F25L32QA 16. M7-M0: Mode bits. Quad input address: IO0 = (A20, A16, A12, A8, A4, A0, M4, M0) IO1 = (A21, A17, A13, A9, A5, A1, M5, M1) IO2 = (A22, A18, A14, A10, A6, A2, M6, M2) IO3 = (A23, A19, A15, A11, A7, A3, M7, M3) Bus Cycle-2 Fast Read Quad I/O data: IO0 = (X, X), (X, X), (D4, D0), (D4, D0) IO1 = (X, X), (X, X), (D5, D1), (D5, D1) IO2 = (X, X), (X, X), (D6, D2), (D6, D2) IO3 = (X, X), (X, X), (D7, D3), (D7, D3) DOUT0 DOUT1 (D4, D0), (D4, D0), (D4, D0), (D4, D0) (D5, D1), (D5, D1), (D5, D1), (D5, D1) (D6, D2), (D6, D2), (D6, D2), (D6, D2) (D7, D3), (D7, D3), (D7, D3), (D7, D3) DOUT2 DOUT3 DOUT4 DOUT5 Bus Cycle-3 Bus Cycle-4 17. The instruction is initiated by executing command code, followed by address bits into SI (SIO0) before DIN, and then input data to bidirectional IO pins (SIO0 ~ SIO3). Quad input data: IO0 = (D4, D0), (D4, D0), (D4, D0), (D4, D0) IO1 = (D5, D1), (D5, D1), (D5, D1), (D5, D1) IO2 = (D6, D2), (D6, D2), (D6, D2), (D6, D2) IO3 = (D7, D3), (D7, D3), (D7, D3), (D7, D3) DIN0 DIN1 DIN2 DIN3 18. This instruction is recommended when using the Dual or Quad Mode bit feature. Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 14/42 ESMT Read (33MHz) (Preliminary) F25L32QA The Read instruction supports up to 33 MHz, it outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low to high transition on CE . The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space, i.e. for 32Mbit density, once the data from address location 3FFFFFH had been read, the next output will be from address location 00000H. The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A23 -A0]. CE must remain active low for the duration of the Read cycle. See Figure 2 for the Read sequence. Figure 2: Read Sequence Fast Read (50 MHz ~ 100 MHz) The Fast Read instruction supporting up to 100 MHz is initiated by executing an 8-bit command, 0BH, followed by address bits [A23 -A0] and a dummy byte. CE must remain active low for the duration of the Fast Read cycle. See Figure 3 for the Fast Read sequence. Following a dummy byte (8 clocks input dummy cycle), the Fast Read instruction outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low to high transition on CE . The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space, i.e. for 32Mbit density, once the data from address location 3FFFFFH has been read, the next output will be from address location 000000H. CE MODE3 SCK MODE0 012345678 15 16 23 24 31 32 39 40 47 48 55 56 63 64 71 72 80 SI MSB 0B ADD. MSB HIGH IMPENANCE ADD. ADD. X N DOUT MSB N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT SO Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH) Figure 3: Fast Read Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 15/42 ESMT Fast Read Dual Output (50 MHz ~ 100 MHz) (Preliminary) F25L32QA The Fast Read Dual Output (3BH) instruction is similar to the standard Fast Read (0BH) instruction except the data is output on bidirectional I/O pins (SIO0 and SIO1). This allows data to be transferred from the device at twice the rate of standard SPI devices. This instruction is for quickly downloading code from Flash to RAM upon power-up or for applications that cache codesegments to RAM for execution. The Fast Read Dual Output instruction is initiated by executing an 8-bit command, 3BH, followed by address bits [A23 -A0] and a dummy byte. CE must remain active low for the duration of the Fast Read Dual Output cycle. See Figure 4 for the Fast Read Dual Output sequence. CE MODE3 SCK MODE0 012345678 15 16 23 24 31 32 39 40 43 44 47 48 51 52 55 56 Dummy SIO0 MSB 3B ADD. MSB HIGH IMPENANCE ADD. ADD. IO0 switches from In put to Ouput 6420 6420 6420 642064 D OUT N DOUT N+1 D OU T N+2 D OU T N+3 D OUT N+4 SIO1 75317531 7531 753175 Note: The input data durin g the dummy clocks is “don’t care”. However , the IO0 pin should be high-impefance piror to th e falling edge of the first data clock. Figure 4: Fast Read Dual Output Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 16/42 ESMT Fast Read Dual I/O (50 MHz ~ 100 MHz) (Preliminary) F25L32QA The Fast Read Dual I/O (BBH) instruction is similar to the Fast Read Dual Output (3BH) instruction, but with the capability to input address bits [A23 -A0] two bits per clock. To set mode bits [M7 -M0] after the address bits [A23 -A0] can further reduce instruction overhead (See Figure 5). The upper mode bits [M7 –M4] controls the length of next Fast Read Dual I/O instruction with/without the first byte command code (BBH). The lower mode bits [M3 –M0] are “don’t care”. If [M7 –M0] = “AxH”, the next Fast Read Dual I/O instruction (after CE is raised and the lowered) doesn’t need the command code (See Figure 6). This way let the instruction sequence reduce 8 clocks and allows to enter address immediately after CE is asserted low. If [M7 –M0] are the value other than “AxH”, the next instruction need the first byte command code, thus returning to normal operation. A Mode Bit Reset (FFH) also can be used to reset mode bits [M7 –M0] before issuing normal instructions. CE MODE3 SCK MODE0 012345678 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 27 28 31 32 35 36 39 40 IO0 switches from Input to Ouput SIO0 MSB HIG H IMPENANCE BB 22 20 18 16 14 12 10 8 6 4 2 0 6 4 642064206420 6420 64 DOUT N D OU T N+1 DOUT N+2 DOUT N+3 DOUT N+4 SIO1 23 21 19 17 15 13 11 9 7 5 3 1 7 5 753175317531 7531 75 A23-16 A15-8 A7- 0 M7- 0 Note: The mode bits [M3 -M0] are “d on’t care”. However , the IO pins sh ould be high-impefance piror to the falling edge of the first data clock. Figure 5: Fast Read Dual I/O Sequence ([M7 -M0] = 0xH or NOT AxH) CE MODE3 SCK MODE0 IO0 switches from In put to Ouput SIO0 22 20 18 16 14 12 10 8 6 4 2 0 6 4 6420 6420 6420 642064 DOUT N DOUT N+1 D OU T N+2 D OUT N+3 D OUT N+4 SIO1 23 21 19 17 15 13 11 9 7 5 3 1 7 5 7531 7531 7531 753175 A23- 16 A15- 8 A7-0 M 7-0 Note: The mode bits [M3 -M0] are “don’t care”. However , the IO pins sh ould be high-impe fance piror to the fa ll ing edge of the fi rst data clock. Figure 6: Fast Read Dual I/O Sequence ([M7 -M0] = AxH) Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 17/42 ESMT (Preliminary) F25L32QA Fast Read Quad Output (50 MHz ~ 100 MHz) The Fast Read Quad Output (6B) instruction is similar to the Fast Read Dual Output (3BH) instruction except the data is output on bidirectional I/O pins (SIO0, SIO1, SIO2 and SIO3). A Quad Enable (QE) bit of Status Register-2 must be set “1” to enable Quad function. This allows data to be transferred from the device at four times the rate of standard SPI devices. The Fast Read Quad Output instruction is initiated by executing an 8-bit command, 6BH, followed by address bits [A23 -A0] and a dummy byte. CE must remain active low for the duration of the Fast Read Dual Output cycle. See Figure 7 for the Fast Read Quad Output sequence. CE MODE3 SCK MODE0 Dummy SIO0 MSB SIO1 6B ADD. MSB H IGH IMPENANCE ADD. A DD. IO0 switches from Input to Ouput 40404040 40 012345678 15 16 23 24 31 32 39 40 4142 43 44 45 46 47 48 51515151 51 SIO2 HIGH IMPENANCE 62 SIO3 HIGH IMPENANCE 73 N N+1 N+2 N+3 N+4 D OU T DOUT DOUT D OU T D OUT Note: The input data du ring the dummy clocks is “don’t care”. However , the IO pins should be high-impefance piror to the fal ling edge o f the first data clock. Figure 7: Fast Read Quad Output Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 18/42 ESMT Fast Read Quad I/O (50 MHz ~ 100 MHz) (Preliminary) F25L32QA The Fast Read Quad I/O (EBH) instruction is similar to the Fast Read Quad Output (6BH) instruction, but with the capability to input address bits [A23 -A0] four bits per clock. A Quad Enable (QE) bit of Status Register-2 must be set “1” to enable Quad function. To set mode bits [M7 -M0] after the address bits [A23 -A0] can further reduce instruction overhead (See Figure 8). The upper mode bits [M7 –M4] controls the length of next Fast Read Quad I/O instruction with/without the first byte command code (EBH). The lower mode bits [M3 –M0] are “don’t care”. If [M7 –M0] = “AxH”, the next Fast Read Quad I/O instruction (after CE is raised and the lowered) doesn’t need the command code (See Figure 9). This way let the instruction sequence reduce 8 clocks and allows to enter address immediately after CE is asserted low. If [M7 –M0] are the value other than “AxH”, the next instruction need the first byte command code, thus returning to normal operation. A Mode Bit Reset (FFH) also can be used to reset mode bits [M7 –M0] before issuing normal instructions. CE MODE3 SCK MODE0 012345678 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Dummy SIO0 MSB SIO1 H IGH IMPE NANCE 21 17 13 9 IO0 switches from Input to Ouput 4040 40 EB 20 16 12 8 4 0 4 0 5 1 5 1 5151 51 6262 62 7373 73 N N+1 N+2 DOUT DOUT DOUT SIO2 SIO3 HIGH IMPENANCE HIGH IMP ENANCE 22 18 14 10 6 2 6 2 23 19 15 11 7 3 7 3 A 23- 0 M7 -0 Note: The mode bits [M3 -M0] are “don’t care”. However , the IO pins sh ould be high-impe fance piror to the fall ing edge of the fi rst data clock. Figure 8: Fast Read Quad I/O Sequence ([M7 -M0] = 0xH or NOT AxH) CE MODE3 SCK MODE0 0123 45678 9 10 11 12 13 14 15 16 Dummy SIO0 20 16 12 8 4 0 4 0 IO0 switches from Input to Oup ut 4040 40 SIO1 21 1 7 13 9 5 1 5 1 5151 51 626262 737373 N N+1 N+2 D OUT D OUT D OU T SIO2 SIO3 22 18 14 10 6 2 6 2 23 19 15 11 7 3 7 3 A23-0 M7-0 Note: The mode bits [M3 -M0] are “don’t care”. However , the IO pins sh ould be high-imp efance piror to the falling edge of the fi rst data clock. Figure 9: Fast Read Quad I/O Sequence ([M7 -M0] = AxH) Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 19/42 ESMT Page Program (PP) (Preliminary) F25L32QA The Page Program instruction allows many bytes to be programmed in the memory. The bytes must be in the erased state (FFH) when initiating a Program operation. A Page Program instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write Enable (WREN) instruction must be executed. CE must remain active low for the duration of the Page Program instruction. The Page Program instruction is initiated by executing an 8-bit command, 02H, followed by address bits [A23-A0]. Following the address, at least one byte Data is input (the maximum of input data can be up to 256 bytes). If the 8 least significant address bits [A7-A0] are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits [A7-A0] are all zero). If more than 256 bytes Data are sent to the device, previously latched data are discarded and the last 256 bytes Data are guaranteed to be programmed correctly within the same page. If less than 256 bytes Data are sent to device, they are correctly programmed at the requested addresses without having any effects on the other bytes of the same page. CE must be driven high before the instruction is executed. The user may poll the BUSY bit in the software status register or wait TPP for the completion of the internal self-timed Page Program operation. While the Page Program cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY bit. It is recommended to wait for a duration of TBP1 before reading the status register to check the BUSY bit. The BUSY bit is a 1 during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. After the Page Program cycle has finished, the Write-Enable-Latch (WEL) bit in the Status Register is cleared to 0. See Figure 10 for the Page Program sequence. Figure 10: Page Program Sequence Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 0.2 20/42 ESMT Quad Page Program (Preliminary) F25L32QA The Quad Page Program instruction allows many bytes to be programmed in the memory by using four I/O pins (SIO0, SIO1, SIO2 and SIO3). The instruction can improve programmer performance and the effectiveness of application that have slow clock speed