F49L320UA_1

ESMT Flash 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands compatible with single-power supply Flash Low power consumption - 20mA typical active current - 25uA typical standby current  100,000 program/erase cycles typically 20 Years Data Retention  Command register architecture - Byte Word Programming (9μs/11μs typical) - Byte Mode : eight 8KB, sixty three 64KB sectors. - Word Mode : eight 4K word, sixty-three 32 K word sectors. Auto Erase (chip & sector) and Auto Program - Any combination of sectors can be erased concurrently; Chip erase also provided. - Automatically program and verify data at specified address Erase Suspend/Erase Resume - Suspend or Resume erasing sectors to allow the read/program in another sector Secured Silicon Sector - 128word sector for permanent, secure identification through an 8- word random Electronic Serial Number - May be programmed and locked at the factory or by the customer - Accessible through a command sequence. F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C 32 Mbit (4M x 8/2M x 16) 3V Only CMOS Flash Memory Ready/Busy (RY/ BY ) - RY/ BY output pin for detection of program or erase operation completion End of program or erase detection - Data polling - Toggle bits Hardware reset - Hardware pin ( RESET ) resets the internal state machine to the read mode Sector Protection /Unprotection - Hardware Protect/Unprotect any combination of sectors from a program or erase operation. Low VCC Write inhibit is equal to or less than 2.0V Boot Sector Architecture - U = Upper Boot Block - B = Bottom Boot Block Packages available: - 48-pin TSOPI - All Pb-free products are RoHS-Compliant CFI (Common Flash Interface) complaint - Provides device-specific information to the system, allowing host software to easily reconfigure to different Flash devices. - 2. ORDERING INFORMATION Part No F49L320UA-70TIG F49L320BA-70TIG Boot Upper Bottom Speed Package Comments Part No 70 ns TSOPI Pb-free F49L320UA-90TIG 70 ns TSOPI Pb-free F49L320BA-90TIG Boot Upper Bottom Speed 90 ns 90 ns Package TSOPI TSOPI Comments Pb-free Pb-free 3. GENERAL DESCRIPTION The F49L320UA/F49L320BA is a 32 Megabit, 3V only CMOS Flash memory device organized as 4M bytes of 8 bits or 2M words of 16bits. This device is packaged in standard 48-pin TSOP. It is designed to be programmed and erased both in system and can in standard EPROM programmers. With access times of 70 ns and 90 ns, the F49L320UA/F49L320BA allows the operation of high-speed microprocessors. The device has separate chip enable CE , write enable WE , and output enable OE controls. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles. The F49L320UA/F49L320BA is entirely pin and command set compatible with the JEDEC standard for 32 Megabit Flash memory devices. Commands are written to The F49L320UA/F49L320BA features a sector erase architecture. The device array is divided into eight 8KB, sixty-three 64KB for byte mode. The device memory array is divided into eight 4K word, sixty-three 32K word sectors for word mode. Sectors can be erased individually or in groups without affecting the data in other sectors. Multiple-sector erase and whole chip erase capabilities provide the flexibility to revise the data in the device. The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory. This can be achieved in-system or via programming equipment. A low VCC detector inhibits write operations on loss of power. End of program or erase is detected by the Ready/Busy status pin, Data Polling of DQ7, or by the Toggle Bit I feature on DQ6. Once the program or erase cycle has been successfully completed, the device internally resets to the Read mode. The command register using standard microprocessor write timings. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 1/55 ESMT 4. PIN CONFIGURATIONS 4.1 48-pin TSOP F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C 4.2 Pin Description Pin Name Address Input Data Input/Output Q15 (Word mode) / LSB addr (Byte Mode) Chip Enable Output Enable Write Enable Reset Word/Byte selection input Ready/Busy Power Supply Ground No connection Functions To provide memory addresses. To output data when Read and receive data when Write. The outputs are in tri-state when OE or CE is high. To bi-direction date I/O when BYTE is High To input address when BYTE is Low To activate the device when CE is low. To gate the data output buffers. To control the Write operations. Hardware Reset Pin/Sector Protect Unprotect To select word mode or byte mode To check device operation status To provide power Symbol A0~A20 DQ0~DQ14 DQ15/A-1 CE OE WE RESET BYTE RY/ BY VCC GND NC Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 2/55 ESMT 5. SECTOR STRUCTURE Table 1: F49L320UA Sector Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 Sector Size Byte Mode 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes Word Mode 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords Address range Byte Mode(x8) 000000-00FFFF 010000-01FFFF 020000-02FFFF 030000-03FFFF 040000-04FFFF 050000-05FFFF 060000-06FFFF 070000-07FFFF 080000-08FFFF 090000-09FFFF 0A0000-0AFFFF 0B0000-0BFFFF 0C0000-0CFFFF 0D0000-0DFFFF 0E0000-0EFFFF 0F0000-0FFFFF 100000-10FFFF 110000-11FFFF 120000-12FFFF 130000-13FFFF 140000-14FFFF 150000-15FFFF 160000-16FFFF 170000-17FFFF 180000-18FFFF 190000-19FFFF 1A0000-1AFFFF 1B0000-1BFFFF 1C0000-1CFFFF 1D0000-1DFFFF 1E0000-1EFFFF 1F0000-1FFFFF 200000-20FFFF 210000-21FFFF 220000-22FFFF Word Mode(x16) 00000-07FFF 08000-0FFFF 10000-17FFF 18000-1FFFF 20000-27FFF 28000-2FFFF 30000-37FFF 38000-3FFFF 40000-47FFF 48000-4FFFF 50000-57FFF 58000-5FFFF 60000-67FFF 68000-6FFFF 70000-77FFF 78000-7FFFF 80000-87FFF 88000-8FFFF 90000-97FFF 98000-9FFFF A0000-A7FFF A8000-AFFFF B0000-B7FFF B8000-BFFF C0000-C7FFF C8000-CFFFF D0000-D7FFF D8000-DFFFF E0000-E7FFF E8000-EFFFF F0000-F7FFF F8000-FFFFF 100000-107FFF 108000-10FFFF 110000-117FFF A20 A19 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Sector Address A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 A14 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A13 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A12 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 3/55 ESMT SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords 230000-23FFFF 240000-24FFFF 250000-25FFFF 260000-26FFFF 270000-27FFFF 280000-28FFFF 290000-29FFFF 2A0000-2AFFFF 2B0000-2BFFFF 2C0000-2CFFFF 2D0000-2DFFFF 2E0000-2EFFFF 2F0000-2FFFFF 300000-30FFFF 310000-31FFFF 320000-32FFFF 330000-33FFFF 340000-34FFFF 350000-35FFFF 360000-36FFFF 370000-37FFFF 380000-38FFFF 390000-39FFFF 3A0000-3AFFFF 3B0000-3BFFFF 3C0000-3CFFFF 3D0000-3DFFFF 3E0000-3EFFFF 3F0000-3F1FFF 3F2000-3F3FFF 3F4000-3F5FFF 3F6000-3F7FFF 3F8000-3F9FFF 3FA000-3FBFFF 3FC000-3FDFFF 3FE000-3FFFFF 118000-11FFFF 120000-127FFF 128000-12FFFF 130000-137FFF 138000-13FFFF 140000-147FFF 148000-14FFFF 150000-157FFF 158000-15FFFF 160000-167FFF 168000-16FFFF 170000-177FFF 178000-17FFFF 180000-187FFF 188000-18FFFF 190000-197FFF 198000-19FFFF 1A0000-1A7FFF 1A8000-1AFFFF 1B0000-1B7FFF 1B8000-1BFFFF 1C0000-1C7FFF 1C8000-1CFFFF 1D0000-1D7FFF 1D8000-1DFFFF 1E0000-1E7FFF 1E8000-1EFFFF 1F0000-1F7FFF 1F8000-1F8FFF 1F9000-1F9FFF 1FA000-1FAFFF 1FB000-1FBFFF 1FC000-1FCFFF 1FD000-1FDFFF 1FE000-1FEFFF 1FF000-1FFFFF 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 1 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 0 0 1 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 1 1 0 0 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 0 1 0 1 0 1 Note: Byte Mode: address range A20 : A-1, Word mode : address range A20 : A0 Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 4/55 ESMT Table 2: F49L320BA Sector Address Table Sector Size Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 SA32 SA33 SA34 SA35 Byte Mode Word Mode 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 8Kbytes 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords 4Kwords F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Address range Byte Mode(x8) 000000-001FFF 002000-003FFF 004000-005FFF 006000-007FFF 008000-009FFF 00A000-00BFFF 00C000-00DFFF 00E000-00FFFF 010000-01FFFF 020000-02FFFF 030000-03FFFF 040000-04FFFF 050000-05FFFF 060000-06FFFF 070000-07FFFF 080000-08FFFF 090000-09FFFF 0A0000-0AFFFF 0B0000-0BFFFF 0C0000-0CFFFF 0D0000-0DFFFF 0E0000-0EFFFF 0F0000-0FFFFF 100000-10FFFF 110000-11FFFF 120000-12FFFF 130000-13FFFF 140000-14FFFF 150000-15FFFF 160000-16FFFF 170000-17FFFF 180000-18FFFF 190000-19FFFF 1A0000-1AFFFF 1B0000-1BFFFF 1C0000-1CFFFF Sector Address A15 0 0 0 0 0 0 0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 A14 0 0 0 1 1 1 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X A13 0 0 1 1 0 0 1 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X A12 0 1 0 1 0 1 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X Word Mode(x16) A20 A19 A18 A17 A16 00000-00FFF 01000-01FFF 02000-02FFF 03000-03FFF 04000-04FFF 05000-05FFF 06000-06FFF 07000-07FFF 08000-0FFFF 010000-017FFF 018000-01FFFF 020000-027FFF 028000-02FFFF 030000-037FFF 038000-03FFFF 040000-047FFF 048000-04FFFF 050000-057FFF 058000-05FFFF 060000-067FFF 068000-06FFFF 070000-077FFF 078000-07FFFF 080000-087FFF 088000-08FFFF 090000-097FFF 098000-09FFFF 0A0000-0A7FFF 0A8000-0AFFFF 0B0000-0B7FFF 0B8000-0BFFFF 0C0000-0C7FFF 0C8000-0CFFFF 0D0000-0D7FFF 0D8000-0DFFFF 0E0000-0E7FFF 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 0 0 0 0 0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 5/55 ESMT SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 64Kbytes 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 32Kwords 1D0000-1DFFFF 1E0000-1EFFFF 1F0000-1FFFFF 200000-20FFFF 210000-21FFFF 220000-22FFFF 230000-23FFFF 240000-24FFFF 250000-25FFFF 260000-26FFFF 270000-27FFFF 280000-28FFFF 290000-29FFFF 2A0000-2AFFFF 2B0000-2BFFFF 2C0000-2CFFFF 2D0000-2DFFFF 2E0000-2EFFFF 2F0000-2FFFFF 300000-30FFFF 310000-31FFFF 320000-32FFFF 330000-33FFFF 340000-34FFFF 350000-35FFFF 360000-36FFFF 370000-37FFFF 380000-38FFFF 390000-39FFFF 3A0000-3AFFFF 3B0000-3BFFFF 3C0000-3CFFFF 3D0000-3DFFFF 3E0000-3EFFFF 3F0000-3FFFFF 0E8000-0EFFFF 0F0000-0F7FFF 0F8000-0FFFFF 100000-107FFF 108000-10FFFF 110000-117FFF 118000-11FFFF 120000-127FFF 128000-12FFFF 130000-137FFF 138000-13FFFF 140000-147FFF 148000-14FFFF 150000-157FFF 158000-15FFFF 160000-167FFF 168000-16FFFF 170000-177FFF 178000-17FFFF 180000-187FFF 188000-18FFFF 190000-197FFF 198000-19FFFF 1A0000-1A7FFF 1A8000-1AFFFF 1B0000-1B7FFF 1B8000-1BFFFF 1C0000-1C7FFF 1C8000-1CFFFF 1D0000-1D7FFF 1D8000-1DFFFF 1E0000-1E7FFF 1E8000-1EFFFF 1F0000-1F7FFF 1F8000-1FFFFF 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Note: Byte Mode: address range A20 : A-1, Word mode : address range A20 : A0 Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 6/55 ESMT 6. FUNCTIONAL BLOCK DIAGRAM F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 7/55 ESMT 7. FUNCTIONAL DESCRIPTION 7.1 Device operation This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The register is composed of latches that store the command, address and data information needed to execute the command. The contents F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The F49L320UA /F49L320BA features various bus operations as Table 3. Table 3. F49L320UA/F49L320BA Operation Modes Selection Operation Read Write(Note1) Accelerated Program Standby Output Disable Reset Sector Protect (Note 3) Sector Unprotect (Note 3) Temporary Sector Unprotect CE OE L H H X H X H H X WE RESET H H H VCC ± 0.3 H L VID VID VID WP /ACC Addresses (Note 3) AIN AIN AIN X X X SA, A6 = L, A1 = H, A0 =L SA, A6 = H, A1 = H, A0 = L AIN DQ0-DQ7 DOUT (Note 5) (Note 5) High-Z High-Z High-Z (Note 5) (Note 5) (Note 5) DQ8-DQ15 BYTE =VIH DOUT (Note 5) BYTE =VIL L L L VCC ± 0.3 L X L L X H L L X H X L L X L/H (Note 4) VHH H L/H L/H L/H (Note 4) (Note 4) (Note 5) High-Z High-Z High-Z X X (Note 5) DQ8-DQ14 = High-X, DQ15 = A-1 High-Z High-Z High-Z X X High-Z Notes: 1. When the ACC pin is at VHH, the device enters the accelerated program mode. See 2. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL). 3. The sector protect and sector unprotect functions may also be implemented via programming equipment. 4. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection depends on whether they were last protected or unprotected. If WP#/ACC = VHH, all sectors are unprotected. 5. DIN or DOUT as required by command sequence, data polling, or sector protection algorithm. Write Protect(WP#) The write protect function provides a hardware method of protecting certain boot sectors without using VID. This function is one of two provided by WP#/ACC pin. If the system asserts VIL On the WP#/ACC pin, the device disables program and erase functions in the two outermost 8-Kbyte boot sectors independently of whether those sectors were protected or unprotected using the method. The two outermost 8-Kbyte boot sectors are the two sectors containing the lowest addresses in a bottom-boot configured device, or the two sectors containing the highest addresses in a top-boot configured device. If the system asserted VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8-Kbyte boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotected using the method. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 8/55 ESMT Description Manufacturer ESMT Device ID: F49L320UA Device ID: F49L320BA F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Mode ID: Table 4. F49L320UA/F49L320BA Auto-Select Mode (High Voltage Method) A20 A11 A8 A5 DQ8 to to to CE# OE# WE# A9 to A6 to A3 A2 A1 A0 A12 A10 A7 A4 DQ15 L L L H X L X L L X L L H X X VID H L H H L L L L L L L L L L H H H H H SA X VID X L X L L H L X X L L H X X VID X L X L L H H X X L L H X X VID X L X L L H H X X X X X VID VID X X L L X X L L L L L L H H 22h X 22h X X DQ7 to DQ0 8Ch 7Fh 7Fh 7Fh F6h F6h F9h F9h 01h (protected) 00h (unprotected) 8D (factory locked) 0D (not factory locked) 9D (factory locked) 1D (not factory locked) Word Byte Word Byte Sector Protection Verification Sector Silicon Sector Indicator Bit (DQ7) F49L320UA Sector Silicon Sector Indicator Bit (DQ7) F49L320BA Notes : L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care. 1.Manufacturer and device codes may also be accessed via the software command sequence in Table 5. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 9/55 ESMT Reset Mode : Hardware Reset When the RESET pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tri-states all output pins, and ignores all read/write commands for the duration of the RESET pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated later once the device is ready to accept another command sequence, to ensure the data integrity. The current is reduced for the duration of the RESET pulse. When RESET is held at VSS ±0. 3V, the device draws CMOS standby current (ICC4). If RESET is held at VIL but not within VSS±0. 3V, the standby current will be greater. The RESET pin may be tied to system reset circuitry. A system reset would thus reset the Flash memory, enabling the system to read the boot-up firm-ware from the Flash memory. If RESET is asserted during a program or erase embedded algorithm operation, the RY/ BY pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/ BY to determine whether the reset operation is complete. If RESET is asserted when a program or erase operation is not executing, i.e. the RY/ BY is “1”, the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data after tRH when the RESET pin returns to VIH. Refer to the AC Characteristics tables 17 for Hardware Reset section & Figure 23 for the timing diagram. F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C See “Read Command” section for more information. Refer to the AC Read Operations table 14 for timing specifications and to Figure 5 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Write Mode To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE and CE to VIL, and OE to VIH. The “Program Command” section has details on programming data to the device using standard command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 1 and 2 indicate the address space that each sector occupies. A “sector address” consists of the address bits required to uniquely select a sector. The “Software Command Definitions” section has details on erasing a sector or t he entire chip, or suspending/resuming the erase operation. When the system writes the auto-select command sequence, the device enters the auto-select mode. The system can then read auto-select codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Auto-select Mode and Auto-select Command sections for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC Characteristics” section contains timing specification tables and timing diagrams for write operations. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain unchanged for over 250ns. The automatic sleep mode is independent of the CE , WE , and OE control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification. Read Mode To read array data from the outputs, the system must drive the CE and OE pins to VIL. CE is the power control and selects the device. OE is the output control and gates array data to the output pins. WE should remain at VIH. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor’s read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. The device remains enabled for read access until the command register contents are altered. Word / Byte Mode This pin controls the I/O configuration of device. When BYTE = VIH or Vcc ± 0. 3V. The I/O configuration is x16 and t he pin of D15/A-1 is bi-direction Data I/O. However, BYTE = VIL or VSS ± 0.3V. The I/O configuration would be x8 and The pin of DQ15/A-1 only address input pin. You must define the function of this pin before enable this device. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 10/55 ESMT Temporary Sector Unprotect Mode This feature allows temporary unprotection of previously protected sector to change data in-system. This mode is activated by setting the RESET pin to VID(10V-10.5V). During this mode, all formerly protected sectors are un-protected and F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET pin, all the previously protected sectors are protected again. S tart RESET = V ID ( Note 1) Perform Erase or Program Operation Operation Completed RESET = V I H Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 11/55 ESMT Output Disable Mode With the OE is at a logic high level (VIH), outputs from the devices are disabled. This will cause the output pins in a high impedance state F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 16 shows the algorithms and Figure 15 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. The alternate method intended only for programming equipment requires VID on address pin A9, OE, and RESET . Standby Mode When CE and RESET are both held at VCC ± 0.3V, the device enter CMOS Standby mode. If CE and RESET are held at VIH, but not within the range of VCC ± 03V, t he device will still be in the standby mode, but the standby current will be larger. If the device is deselected during auto algorithm of erasure or programming, the device draws active current ICC2 until the operation is completed. ICC3 in the DC Characteristics table represents the standby current specification. The device requires standard access time (tCE) for read access from either of these standby modes, before it is ready to read data. Auto-select Mode The auto-select mode provides manufacturer and device identification and sector protection verification, through outputs on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the auto-select codes can also be accessed in-system through the command register. When using programming equipment, this mode requires VID (10 V to 10.5 V) on address pin A9. While address pins A3, A2, A1, and A0 must be as shown in Table 4. To verify sector protection, all necessary pins have to be set as required in Table 4, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. To access the auto-select codes in-system, the host system can issue the auto-select command via the command register, as shown in Table 5. This method does not require VID. See “Software Command Definitions” for details on using the auto-select mode. Sector Protect / Un-protect Mode The hardware sector protect feature disables both program and erase operations in any sector. The hardware sector unprotect feature re-enables both the program and erase operations in previously protected sectors. Sector protect/unprotect can be implemented via two methods. The primary method requires VID on the RESET pin only, and can be implemented either in-system or via programming equipment. 7.2 Software Command Definitions Writing specific address and data commands or sequences into the command register initiates the device operations. Table 5 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE or CE , whichever happens later. All data is latched on the rising edge of WE or CE , whichever happens first. Refer to the corresponding timing diagrams in the AC Characteristics section. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 12/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 5. F49L320UA/F49L320BA Software Command Definitions Bus Cycle Note1~4 Command Sequence Cycles 1st 2nd 3rd 4th 5th 6th Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Read Note 5 1 RA RD Reset Note 6 1 XXX F0 X00 XX8C X04 XX7F Word 555 2AA 555 X08 XX7F X0C XX7F Manufacturer ID 4 AA 55 90 X00 8C X04 7F Byte AAA 555 AAA X08 7F X0C 7F Device ID, Word 555 2AA 555 X01 22F6 4 AA 55 90 F49L320UA Byte AAA 555 AAA X02 F6 Device ID, Word 555 2AA 555 X01 22F9 4 AA 55 90 F49L320BA Byte AAA 555 AAA X02 F9 Secured Silicon Sector Word 555 2AA 555 X03 4 AA 55 90 8D/0D Factory Protect Byte AAA 555 AAA X06 F49L320UA Note 8 Secured Silicon Sector Word 555 2AA 555 X03 4 AA 55 90 9D/1D Factory Protect Byte AAA 555 AAA X06 F49L320BA Note 8 Sector Protect Verify Note 9 Enter Secured Silicon Sector Region Exit Secured Silicon Sector Region CFI Query Note 10 Program Chip Erase Sector Erase Erase Suspend Note 11 Erase Resume Note 12 Word 4 Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte 3 4 1 4 6 6 1 1 AAA 555 AAA 555 AAA 55 AA 555 AAA 555 AAA 555 AAA XXX XXX AA AA 98 AA AA AA B0 30 2AA 555 2AA 555 2AA 555 55 55 55 555 AAA 555 AAA 555 AAA A0 80 80 PA 555 AAA 555 AAA PD AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 555 AA 555 2AA 555 2AA 555 55 55 2AA 55 AAA 555 AAA 555 AAA 88 90 XXX 00 555 90 (SA) X02 (SA) X04 XX00 XX01 00 01 Autoselect Note 7 Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 13/55 ESMT Legend: F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A20–A12 uniquely select any sector. Notes: 1.All values are in hexadecimal. 2.Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 3.Data bits DQ15–DQ8 are don’t cares for unlock and command cycles. 4.Address bits A20–A11 are don’t cares for unlock and command cycles, unless SA or PA required. 5.No unlock or command cycles required when reading array data. 6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is providing status data). 7.The fourth cycle of the autoselect command sequence is a read cycle. 8. For word mode data is 8Dh for factory locked and 0Dh for not factory locked. For byte mode data is 9Dh for factory locked and 1Dh for not factory locked. 9.The data is 00h for an unprotected sector and 01h for a protected sector. See “ Autoselect Command Sequence” for more information. 10.Command is valid when device is ready to read array data or when device is in autoselect mode. 11.The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation. 12.The Erase Resume command is valid only during the Erase Suspend mode. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 14/55 ESMT Reset Command Writing the reset command to the device resets the device to reading array data. Address bits are all don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an auto-select command sequence. Once in the auto-select mode, the reset command must be written to return to reading array data (also applies to auto-select during Erase Suspend). If DQ5 goes high (see “DQ5: Exceeded Timing Limits” section) during a program or erase operation, writing the reset command returns the device to reading array data (also applies during Erase Suspend). F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Program Command The program command sequence programs one byte into the device. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. When the Embedded Program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/ BY . See “Write Operation Status” section for more information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the programming operation. The Program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from a “0” back to a “1”. Attempting to do so may halt the operation and set DQ5 to “1”, or cause the Data Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” to a ”1”. Read Command The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is also ready to read array data after completing an Embedded Program or Embedded Erase algorithm. When the device accepts an Erase Suspend command, the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See “Erase Suspend/Erase Resume Commands” for more information on this mode. The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high, or while in the auto-select mode. See the “Reset Command” section. See also the “Read Mode” in the “Device Operations section for more information. Refer to Figure 5 for the timing diagram. Chip Erase Command Chip erase is a six-bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately terminates the operation. The Chip Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure the data integrity. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 15/55 ESMT The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/ BY . See “Write Operation Status” section for more Information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. See the Erase/Program Operations tables in “AC Characteristics” for parameters. F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. Note that a hardware reset during the sector erase operation immediately terminates the operation. The Sector Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure the data integrity. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/ BY . (Refer to “Write Operation Status” section for more information on these status bits.) Refer to the Erase/Program Operations tables in the “AC Characteristics” section for parameters. Sector Erase Command Sector erase is a six-bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. The device does not require the system to preprogram the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50µ s begins. Driving the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 　s, otherwise the last address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µ s, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to reading array data. The system must rewrite the command sequence and any additional sector addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the “DQ3: Sector Erase Timer” section.) The time-out begins from the rising edge of the final WE pulse in the command sequence. Sector Erase Suspend/Resume Command The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure (The device “ erase suspends” all sect or selected for erasure.). This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Addresses are “don’t -cares” when writing the Erase Suspend command as shown in Table 5. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status” section for more information on these status bits. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 16/55 ESMT status bits, just as in the standard program operation. See “Write Operation Status” f or more information. The system may also write the auto-select command sequence when the device is in the Erase Suspend mode. The device allows reading auto-select codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the auto-select mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. After an erase-suspended program operation is complete, the system can once again read array data within non-suspended sectors. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation Status” f or more information. The system may also write the auto-select command sequence when the device is in the Erase Suspend mode. The device allows reading auto-select codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the auto-select mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. The system must write the Erase Resume command (address bits are “don’t care” as shown in Table 5) to exit the erase suspend mode and continue the sector erase F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the device has resumed erasing. Auto-select Command The auto-select command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 6 shows the address and data requirements. This method is an alternative to that shown in Table 4, which is intended for PROM programmers and requires VID on address bit A9. The auto-select command sequence is initiated by writing two unlock cycles, followed by the auto-select command. The device then enters the auto-select mode, and the system may read at any address any number of times, without initiating another command sequence. The read cycles at address 04H, 08H, 0CH, and 00H retrieves the ESMT manufacturer ID. A read cycle at address 01H retrieves the device ID. A read cycle containing a sector address(SA) and the address 02H returns 01H if that sector is protected, or 00H if it is unprotected. Refer to Tables 1 and 2 for valid sector addresses. The system must write the reset command to exit the auto-select mode and return to reading array data. 7.3 Write Operation Status The device provides several bits to determine the status of a write operation: RY/ BY , DQ7, DQ6, DQ5, DQ3, DQ2, and. Table 7 and the following subsections describe the functions of these bits. RY/ BY , DQ7, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. Status Embedded Program Algorithm In Progress Table 7. Write Operation Status DQ7 DQ6 (Note1) DQ 7 DQ5 DQ3 (Note2) 0 0 0 Data 0 1 1 1 N/A 1 N/A Data N/A N/A 1 N/A DQ2 No Toggle Toggle Toggle Data N/A No Toggle Toggle N/A RY/ BY 0 0 1 1 0 0 0 0 Toggle Toggle No Toggle Data Toggle Toggle Toggle Toggle Embedded Erase Algorithm Reading Erase Suspended Sector Erase Suspended Mode Reading Non-Erase Suspended Sector Erase Suspend Program Embedded Program Algorithm Embedded Erase Algorithm Erase Suspend Program 0 1 Data DQ 7 DQ 7 Exceeded Time Limits 0 DQ 7 Notes: 1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. See “DQ5: Exceeded Timing Limits” for more information. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 17/55 ESMT RY/ BY : Ready/Busy The RY/ BY is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/ BY status is valid after the rising edge of the final WE pulse in the command sequence. Since RY/ BY is an open-drain output, several RY/ BY pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the standby mode. Table 7 shows the outputs for RY/ BY . F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Output Enable ( OE) is asserted low. Refer to Figure 21, Data Polling Timings (During Embedded Algorithms), Figure 19 shows the Data Polling algorithm. DQ6:Toggle BIT I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, DQ6 stops toggling. When an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (i.e. the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7. If a program address falls within a protected sector, DQ6 toggles for approximately 2µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 7 shows the outputs for Toggle Bit I on DQ6. Figure 20 shows the toggle bit algorithm. Figure 22 shows the toggle bit timing diagrams. Figure 25 shows the differences between DQ2 and DQ6 in graphical form. Refer to the subsection on DQ2: Toggle Bit II. DQ7: Data Polling The DQ7 indicates to the host system whether an Embedded Algorithm is in progress or completed, or whether the device is in Erase Suspend mode. The Data Polling is valid after the rising edge of the final WE pulse in the program or erase command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the true data on DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data Polling on DQ7 is active for approximately 1 µs, then the device returns to reading array data. During the Embedded Erase algorithm, Data Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ7~ DQ0 on the following read cycles. This is because DQ7 may change asynchronously with DQ0–DQ6 while DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final or CE , whichever happens first, in the command sequence. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 18/55 ESMT DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE or CE to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or whether is in erase-suspended, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 7 to compare outputs for DQ2 and DQ6. Figure 20 shows the toggle bit algorithm in flowchart form. See also the DQ6: Toggle Bit I subsection. Figure 22 shows the toggle bit timing diagram. Figure 25 shows the differences between DQ2 and DQ6 in graphical form. F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C exceeded the specified limits(internal pulse count). Under these conditions DQ5 will produce a "1". This time-out condition indicates that the program or erase cycle was not successfully completed. Data Polling and Toggle Bit are the only operating functions of the device under this condition. If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors. Write the Reset command sequence to the device, and then execute program or erase command sequence. This allows the system to continue to use the other active sectors in the device. If this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad. If this time-out condition occurs during the programming operation, it specifies that the sector containing that byte is bad and this sector may not be reused, however other sectors are still functional and can be reused. The time-out condition will not appear if a user tries to program a non blank location without erasing. Please note that this is not a device failure condition since the device was incorrectly used. Reading Toggle Bits DQ6/ DQ2 Refer to Figure 20 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described earlier. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. DQ3:Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire timeout also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from “ 0” to “ 1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µ s, the system need not monitor DQ3. When the sector erase command sequence is written, the system should read the status on DQ7 (Data Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If DQ3 is “ 1”, the internally controlled erase cycle has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “ 0”, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 7 shows the outputs for DQ3. DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 19/55 ESMT Customer Lockable : Secured Silicon Sector NOT Programmed or Protected at the Factory The customer lockable version allows the Secured Silicon Sector to be programmed once, and then permanently locked after it ships. Note that the accelerated programming (ACC) is not available when programming the Secured Silicon Sector. The Secured Silicon Sector area can be protected using the following procedures: Write the three-cycle Enter Secured silicon Region command sequence, and then follow the in-system sector protect algorithm as shown in Figure 16. of page41, except that RESET# may be either VIH or VID. This allows in system protection of the Secured Silicon Sector without raising any device pin to a high voltage. Note that this method is only applicable to the Secured silicon Sector. To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm shown in below table. Once the Secured Silicon Sector protection must be used with caution since, once protected, there is no procedure available for unprotecting the Secured silicon Sector area, and none of the bits in the Secured Silicon Sector memory space can be modified in any way. F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Factory Locked : Secured Silicon Sector Programmed and Protected at the Factory The Secured Silicon Sector feature provides a 256 –byte Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. Factory Locked version the Bit( DQ7) set to 1, Customer Lockable version the Bit (DQ7) set to 0. In a factory locked device, the Secured Silicon Sector cannot be modified in any way. The device is available pre-programmed with one of the following: 1. A random, secure ESN only. 2. Customer code through the Express Flash service. 3. Both a random, secure ESN and customer code through the Express Flash device. In device that have an ESN, a Bottom Boot device has the 16-byte (8-word) ESN in sector 0 at address 00000H-0000FH in byte mode(or 00000H~00007H in word mode).In the Top Boot device, the ECN is in sector 70 at addresses 3FFF00h-3FFF0Fh in byte mode ( or 1FFF80h-1FFF87h in word mode). In the uniform device, the ESN is in sector 63 at addresses 3FFF00h-3FFF0Fh in byte mode (or 1FFF80h1FFF87h in word mode). Customers may opt to have their code programmed by ESMT through the Express-Flash service. ESMT programs the customer’s code, with or without the random ESN. The devices are then shipped from the ESMT factory with the Secured Silicon Sector locked. Note: 1. After entering Secured Silicon Sector mode, user can program Secured Silicon Sector (means to write ESN code) and do Secured Silicon Sector protection once when device is customer lockable version. 2. Enter Secured Silicon Sector mode, the under functions are not allowed except for CFI. a. Sector Erase/Erase Suspend/Resume. b. Chip Erase. 3. Secured Silicon Sector mode doesn’t have “Erase” and “Unprotect” function. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 20/55 ESMT Sector Address A20~12 111111111 F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Word mode Secured Silicon Sector Addresses Sector Size ( x8 ) ( x16 ) ( bytes/words) Address Range Address Range 256/128 3FFF00h-3FFFFFh 1FFF80h-1FFFFFh Byte mode Secured Silicon Sector Addresses Sector Address A20~12 000000000 Sector Size ( bytes/words) 256/128 ( x8 ) Address Range 000000h-0000FFh ( x16 ) Address Range 000000h-00007Fh 7.4 More Device Operations Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes. In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Logical Inhibit Write cycles are inhibited by holding any one of OE = VIL, CE = VIH or WE = VIH. To initiate a write cycle, CE and WE must be a logical zero while OE is a logical one. Power Supply Decoupling In order to reduce power switching effect, each device should have a 0.1uF ceramic capacitor connected between its VCC and GND. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Power-Up Sequence The device powers up in the Read Mode. In addition, the memory contents may only be altered after successful completion of the predefined command sequences. Power-Up Write Inhibit If WE = CE = VIL and OE = VIH during power up, the device does not accept commands on the rising edge of WE . The internal state machine is automatically reset to reading array data on power-up. Write Pulse "Glitch" Protection Noise pulses of less than 5 ns (typical) on CE or WE do not initiate a write cycle. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 21/55 ESMT COMMON FLASH MEMORY INTERFACE (CFI) F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward- compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to array data. The system can read CFI information at the address given in Tables 8-10 in word mode, the upper address bits (A7-MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 8-10. The system must write the reset command to return the device to the autoselect mode. Table 8 CFI Query Identification String Addresses (Word Mode) 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah Address (Byte Mode) 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h Data 0051h 0052h 0059h 0002h 0000h 0040h 0000h 0000h 0000h 0000h 0000h Description Query Unique ASCII string “QRY” Primary OEM Command Set Address for Primary Extended Table Alternate OEM Command Set (00h = none exists) Address for Alternate OEM Extended Table (00h = none exists) Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 22/55 ESMT Addresses (Word Mode) 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h Address (Byte Mode) 36h 38h 3Ah 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch Data 0027h 0036h 0000h 0000h 0004h 0000h 000Ah 0000h 0005h 0000h 0004h 0000h F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 9 System Interface String Description VCC Min. (write/erase) D7~D4 : volt, D3~D0 : 100 millivolt VCC Max. (write/erase) D7~D4 : volt, D3~D0 : 100 millivolt VPP Min. voltage (00h = no VPP pin present) VPP Max. voltage (00h = no VPP pin present) N Typical timeout per single byte/word write 2 μs N Typical timeout for Min. size buffer write 2 μs (00h = not supported) Typical timeout per individual block erase 2N ms Typical timeout for full chip erase 2N ms (00h = not supported) Max. timeout for byte/word write 2N word times typical Max. timeout for buffer write 2N word times typical Max. timeout per individual block erase 2N word times typical Max. timeout per full chip erase 2N word times typical (00h = not supported) Table 10 Device Geometry Definition Addresses (Word Mode) 27h 28h 29h 2Ah 2Bh 2Ch 2Dh 2Eh 2Fh 30h 31h 32h 33h 34h 35h 36h 37h 38h 39h 3Ah 3Bh 3Ch Address (Byte Mode) 4Eh 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h 72h 74h 76h 78h Data 0016h 0002h 0000h 0000h 0000h 0002h 0007h 0000h 0020h 0000h 003Eh 0000h 0000h 0001h 0000h 0000h 0000h 0000h 0000h 0000h 0000h 0000h Device Size = 2N byte Flash Device Interface description (refer to CFI publication 100) Max. number of byte in multi-byte write = 2N (00h = not supported) Number of Erase Block Regions within device Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) Description Erase Block Region 2 Information Erase Block Region 3 Information Erase Block Region 4 Information Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 23/55 ESMT Addresses (Word Mode) 40h 41h 42h 43h 44h 45h 46h 47h 48h 49h 4Ah 4Bh 4Ch 4Dh 4Eh 4Fh Address (Byte Mode) 80h 82h 84h 86h 88h 8Ah 8Ch 8Eh 90h 92h 94h 96h 98h 9Ah 9Ch 9Eh Data 0050h 0052h 0049h 0031h 0031h 0000h 0002h 0001h 0001h 0004h 0000h 0000h 0000h 00B5h 00C5h 000Xh F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 11 Primary Vendor-Specific Extended Query Description Query-unique ASCII string “ PRI” Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock 0 = Required, 1 = Not Required Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write Erase Protect 0 = Not Supported, X = Number of sectors in per group Sector Temporary Unprotect 00 = Not Supported, 01 = Supported Sector Protect/Group Unprotect scheme Simultaneous Operation 00 = Not Supported, 01 = Supported Burst Mode Type 00 = Not Supported, 01 = Supported Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4 : Volt, D3-D0 : 100mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4 : Volt, D3-D0 : 100mV Top / Bottom Boot Sector Flag (02h = Bottom Boot device, 03h = Top Boot Device) Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 24/55 ESMT 8. ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied. . . . . . . .. . . . . . –65°C to +125°C Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . .–0.5 V to +4.0 V A9, OE, and RESET (Note 2) . . . –0.5 V to +10.5V All other pins (Note 1). . . . . . . . . . –0.5 V to VCC +0.5 V Output Short Circuit Current (Note 3) .. . .. 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 1. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 2. F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C 2. Minimum DC input voltage on pins A9, OE, and RESET is -0.5 V. During voltage transitions, A9, OE, and RESET may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 1. Maximum DC input voltage on pin A9 is +10.5V which may overshoot to 14V periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Figure 1. Maximum Negative Overshoot Waveform 20 n s +0.8V -0.5V -2.0V 20 n s 20 n s Figure 2. Maximum Positive Overshoot Waveform 20 n s Vc c +2.0V Vc c +0.5V 2.0V 20 n s 20 n s Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 25/55 ESMT OPERATING RANGES F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . -40 °C to +85°C VCC Supply Voltages VCC for all devices . . . . . . . . . . . . . . . . . . . . .2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. Symbol CIN1 CIN2 COUT Description Input Capacitance Control Pin Capacitance Output Capacitance Table 12. Capacitance TA = 25°C , f = 1.0 MHz Conditions Min. Typ. VIN = 0V VIN = 0V VOUT = 0V Max. 8 12 12 Unit pF pF pF 9. DC CHARACTERISTICS Table 13. DC Characteristics TA = -40°C to 85°C, VCC = 2.7V to 3.6V Symbol Description Conditions Min. Typ. Max. ILI Input Leakage Current VIN = VSS or VCC, VCC = VCC max. ±1 ILIT A9 Input Leakage Current VCC = VCC max; A9=10.5V 35 ILO Output Leakage Current VOUT = VSS or VCC, VCC = VCC max ±1 @5MHz 9 25 CE = VIL, OE= VIH @1MHz 2 5 ( Byte Mode ) ICC1 VCC Active Read Current @5MHz 9 40 CE = VIL, OE= VIH @1MHz 2 5 ( Word Mode ) 50 20 ICC2 VCC Active write Current = VIL, OE= VIH CE ICC3 VCC Standby Current 25 100 CE ; RESET = VCC ± 0.3V VCC Standby Current 25 100 ICC4 RESET = VSS ± 0.3V During Reset ICC5 Automatic sleep mode VIH = VCC ± 0.3V; VIL = VSS ± 0.3V 25 100 VIL Input Low Voltage(Note 1) -0.5 0.8 VIH Input High Voltage 0.7x VCC VCC + 0.3 Voltage for Auto-Select and Temporary Sector VID VCC =3.3V 10 10.5 Unprotect VOL Output Low Voltage IOL = 4.0mA, VCC = VCC min 0.45 VOH1 Output High Voltage(TTL) IOH = -2mA, VCC = VCC min 0.7x VCC VOH2 Output High Voltage IOH = -100uA, VCC min VCC -0.4 VLKO Low VCC Lock-out Voltage 2.3 2.5 Notes : 1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns. VIL min. = -2.0V for pulse width is equal to or less than 20 ns. 2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns If VIH is over the specified maximum value, read operation cannot be guaranteed. 3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC + 30 ns Unit uA uA uA mA mA mA mA mA uA uA uA V V V V V Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 26/55 ESMT 10. AC CHARACTERISTICS TEST CONDITIONS F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 3. Test Setup Figure 4. Input Waveforms and Measurement Levels 3.0V 0V 1.5V In p u t Test Poin t s Out pu t 1.5V A C TE S TIN G : In p u t s a r e d ri v e n a t 3 . 0 V f o r a l o g i c " 1 " a n d 0 V f o r a l o g i c " 0 " In p u t p u l s e r i s e a n d f a l l t i m e s a r e < 5 n s . Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 27/55 ESMT 10.1 Read Operation TA = -40°C to 85°C, VCC = 2.7V~3.6V Table 14. Read Operations Symbol tRC tACC tCE tOE tDF tOEH tOH Description Conditions -70 Min. 70 Max. 70 70 30 25 0 10 0 F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C -90 Min. 90 Max. 90 90 35 30 0 10 0 Unit ns ns ns ns ns ns ns ns Read Cycle Time (Note 1) Address to Output Delay CE = OE= VIL CE to Output Delay OE= VIL CE = VIL OE to Output Delay CE = VIL OE High to Output Float (Note1) Output Enable Read Toggle and Hold Time Data Polling Address to Output hold CE = OE = VIL Notes : 1. 2. Not 100% tested. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer driven. Figure 5. Read Timing Waveform tRC Addr es s Addresses Stabl e tAC C CE tOE OE tOEH WE tCE tOH Ou t pu t s High-Z tDF High-Z Output Vali d RESET RY/BY 0V Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 28/55 ESMT 10.2 Program/Erase Operation F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 15. WE Controlled Program/Erase Operations(TA = -40°C to 85°C, VCC = 2.7V~3.6V) -70 -90 Symbol Description Unit Min. Max. Min. Max. 70 90 Write Cycle Time (Note 1) ns tWC tAS tAH tDS tDH tOES tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tbusy Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write ( OE High to WE low) CE Setup Time CE Hold Time Write Pulse Width 0 45 35 0 0 0 0 0 35 30 9(typ.) 11(typ.) 0.7(typ.) 50 0 90 0 45 45 0 0 0 0 0 35 30 9(typ.) 11(typ.) 0.7(typ.) 50 0 90 ns ns ns ns ns ns ns ns ns ns us sec us ns ns Write Pulse Width High Programming Operation Byte (Note 2) Word Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Recovery Time from RY/ BY Program/Erase Valid to RY/ BY Delay Notes : 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 29/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 16. CE Controlled Program/Erase Operations(TA = -40°C to 85°C, VCC = 2.7V~3.6V) -70 -90 Symbol Description Min. Max. Min. Max. Unit Write Cycle Time (Note 1) 70 90 ns tWC tAS tAH tDS tDH tOES tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Notes : 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write WE Setup Time 0 45 35 0 0 0 0 0 35 30 9(typ.) 11(typ.) 0.7(typ.) 0 45 45 0 0 0 0 0 35 30 9(typ.) 11(typ.) 0.7(typ.) ns ns ns ns ns ns ns ns ns ns us us sec WE Hold Time CE Pulse Width CE Pulse Width High Programming Byte Operation(note2) Word Sector Erase Operation (note2) Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 30/55 ESMT VCC 3V F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 6. Write Command Timing Waveform Addr es s VIH VIL tAS VIH ADD Valid tAH WE VIL tOES tWP tCW C tWPH CE VIH VIL tCS tCH VIH VIL tDS tDH DIN OE Dat a VIH VIL Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 31/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 7. Embedded Programming Timing Waveform Pr ogr am C omm an d S equ en ce ( l as t t wo cycl e) Read Stat us D at a ( last t w o cycl e) tWC Addr es s 5 55 h tAS PA tAH PA PA CE tGHWL tCH OE tW HW H1 tWP WE tCS tDS tDH A0 h PD tB US Y tWPH Dat a St at u s DOUT tRB RY/BY tVCS VCC Notes : 1. PA = Program Address, PD = Program Data, DOUT is the true data the program address. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 32/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 8. Embedded Programming Algorithm Flowchart S tart W rite Data AAH Address 555H W rite Data 55H Address 2AAH W rite Data A0H Address 555H In c r e m e n t address W rite Program Data/Address Data Poll from system No Verify W ork OK? Ye s No Last address? Ye s Embedded Program Completed Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 33/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 9. CE Controlled Program Timing Waveform 555 for prog ram PA f or p rog r am 2AA for erase SA for sector erase 555 for ch ip eras e Data Pol li n g PA Addr es s tWC tWH WE tG HEL tAS tAH OE tCP tWHWH1 CE tWS tDS tDH Dat a A0 f o r p r og r a m PD f o r p r o g r a m 30 f or sect or erase 55 for erase 10 f or ch ip erase or 2 tCPH tBUSY DQ7 DOUT tRH RESET RY/BY Notes : 1. PA = Program Address, PD = Program Data, DOUT = Data Out , DQ7 = complement of data written to device 2. Figure indicates the last two bus cycles of the command sequence.. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 34/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 10. Embedded Chip Erase Timing Waveform Er as e Com mand Sequ en ce( last t w o cycl e) Read Statu s Dat a tWC Addr es s 2AAh tAS 5 55 h tAH VA VA CE tCH tGHWL OE tWP WE tCS tDS tDH 5 5h 1 0h tBUSY tWPH tW HW H2 Dat a In Progress Complete tRB RY/BY tVCS VCC Notes : SA = Sector Address (for Sector Erase, VA = Valid Address for reading status data (see "Write Operation Status") Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 35/55 ESMT S tart F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 11. Embedded Chip Erase Algorithm Flowchart W rite Data AAH Address 555H W rite Data 55H Address 2AAH W rite Data 80H Address 555H W rite Data AAH Address 555H W rite Data 55H Address 2AAH W rite Data 10H Address 555H Data Poll from System No Data = FFh? Ye s Embedded Chip Erease Completed Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 36/55 ESMT Notes : Er as e Com mand Sequ en ce( last t w o cycl e) F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 12. Embedded Sector Erase Timing Waveform Read Statu s Dat a tWC Addr es s 2AAh tAS SA tAH VA VA CE tCH tGHWL OE tWP WE tCS tDS tDH 55 h 3 0h tBUSY tWPH tW HW H2 Dat a In Progress Complete tRB RY/BY tVCS VCC SA = Sector Address (for Sector Erase, VA = Valid Address for reading status data (see "Write Operation Status") Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 37/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 13. Embedded Sector Erase Algorithm Flowchart S tart W rite Data AAH Address 5 55H W rite Data 55 H Address 2AAH W rite Data 80H Address 555H W rite Data AAH Add ress 555H W rit e Data 55H Address 2AAH W rite Data 3 0H Address SA Last Sector to Erase Yes Data Po ll fro m System No No Data = FFH? Embedde d Sector Ere ase Co mplete d Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 38/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 14. Erase Suspend/Erase Resume Flowchart S tart W rite Data B0H ERASE SUSPEND Tog gle Bi t c h ec kin g Q 6 not toggled No Ye s Read Array or Program Readi ng or Pr og r am m in g En d No Ye s W rite Data 30H ERASE RESUME Continue Erase An oth er Er ase Suspend? No Ye s Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 39/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 15. In-System Sector Protect/Unprotect Timing Waveform ( RESET Control) VID VIH RESET SA,A 6 A1,A0 Valid* Sec t or P r ot ec t Sec tor U npr ot ec t Valid* Ver if y 4 0h Sector Protect = 150us Sec t or Un p r ot ect = 15m s Vali d* Dat a 1us 60 h 6 0h St at u s CE WE OE Notes : When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 40/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 16. In-System Sector Protect/Unprotect Algorithm ( RESET = VID) S tart Start PLSCNT = 1 Protect all sector : The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET = V I D RESET = V I D W ait 1μ s? W ait 1μ s? T emporary Sector Unprotect Mode No First W rite Cyc le = 6 0 h ? First W rite Cyc le = 6 0 h ? No Temporary Sector Unprotect Mode Ye s Set up sector address No Ye s Al l s ec t o r s pr otected ? Sector Protect : W rite 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Ye s Set up first sector address W ait 150 μ s? Sector Unprotect : W rite 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Reset PLSCNT = 1 In c r e m e n t PL SC NT Verify Sector Protect : W rite 40h to sector address with A6 = 0, A1 = 1, A0 = 0 W ait 15 ms? Read from sector address with A6 = 0, A1 = 1, A0 = 0 No P LSCNT = 25? No Data = 01h? Ye s Protect another s e c to r ? No Remove V I D from RESET Ye s In c r e m e n t PL SC NT Verify Sector Unprotect : W rite 40h to sector address with A6 = 1, A1 = 1, A0 =0 Ye s Dev ice failed Read from sector address with A6 = 1, A1 = 1, A0 =0 No PLSCNT = 1000? Ye s Dev ice failed No Data = 00h? Set up next sector address Ye s Last sector v erified ? Ye s No W rite reset command Sector Protect Algorithm Sector Protect c o m p le te Sector Unprotect Algorithm Remove V I D from RESET W rite reset command Sector Protect c o m p le te Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 41/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 17. Sector Protect Timing Waveform (A9, OE Control) Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 42/55 ESMT S tart F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 18. Sector Protection Algorithm (A9, OE Control) Set up sector address PLSCNT = 1 OE = V ID , A9 = V ID , CE = V I L A6 = V IL Activ ate W E Pluse Time out 150us Set W E = V I H , C E = OE = V I L A9 should remain V I D No No PLSCNT = 32? Ye s Dev ice Failed Read from Sector Address = SA, A0=1, A1 = 1 Data = 01H? Protect Another Sector? Ye s Remov e VID from A9 W rite reset command Sector Protection C o m p l e te Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 43/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C WRITE OPERATION STATUS Figure 19. Data Polling Algorithm S tart Read DQ7~DQ0 Add. = VA(1) DQ7 = Data? Ye s No No D Q5 = 1? Ye s Read DQ7~DQ0 Add. = VA DQ7 = Data? Ye s (2 ) No FAIL Pass Notes : 1. VA =Valid address for programming. 2. DQ7 should be re-checked even DQ5 = "1" because DQ7 may change simultaneously with DQ5. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 44/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 20. Toggle Bit Algorithm S tart Read DQ7 ~ DQ0 Read DQ7 ~ DQ0 (Note 1) Toggle Bit = DQ6 Toggle? No Ye s No D Q 5 = 1? Ye s Re ad D Q7 ~D Q 0 Tw ice (Note 1,2) Toggle bit D Q6 = Tog gle? No Ye s Program / Erase operation Not complete, write reset command Note : 1. Read toggle bit twice to determine whether or not it is toggle. 2. Recheck toggle bit because it may stop toggling as DQ5 change to "1". Program / Erase operation complete Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 45/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 21. Data Polling Timings (During Embedded Algorithms) tRC Addr es s tAC C tCE CE tCH tOE OE tOEH tDF VA VA WE tO H High-Z DQ7 Complement Complement Tr u e Vai l d Dat a High-Z DQ0~DQ6 tB US Y Statu s Data Statu s Data Tr u e Vai l d Dat a RY/BY Notes : VA = Valid Address. Figure shows first status cycle after command sequence, last status read cycle, and array data read cycle. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 46/55 ESMT tRC Addr es s VA tAC C tCE CE tCH tOE OE tOEH tDF VA F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 22. Toggle Bit Timing Waveforms (During Embedded Algorithms) VA VA WE tOH DQ6/DQ2 High-Z tBUSY Vaild Status Vaild Status Vaild Data (stops tog gling ) Vaild Data (fi rst re ad ) (sec ond read ) RY/BY Notes : VA = Valid Address; not required for DQ6. Figure shows first status cycle after command sequence, last status read cycle, and array data read cycle. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 47/55 ESMT 10.3 Hardware Reset Operation Symbol TREADY1 TREADY2 TRP TRH TRB F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 17. AC CHARACTERISTICS Description All Speed Options RESET Pin Low (During Embedded Algorithms) Max 20 to Read or Write (See Note) RESET Pin Low (NOT During Embedded Max 500 Algorithms) to Read or Write (See Note) RESET Pulse Width (During Embedded Min 500 Algorithms) RESET High Time Before Read(See Note) Min 50 RY/ BY Recovery Time(to CE , OE go low) Min 0 Unit us ns ns ns ns Notes : Not 100% tested Figure 23. RESET Timing Waveform RY/BY CE, O E tRH RESET tRP tRead y2 Reset T i mi ng NO T dur i ng Au tom at i c Al gor i th m s tRead y1 RY/BY tRB CE, O E RESET tRP Reset Tim ing during Automatic Algorithm s Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 48/55 ESMT 10.4 TEMPORARY SECTOR UNPROTECT Operation Symbol TVIDR TRSP Notes: Not 100% tested Description VID Rise and Fall Time (See Note) RESET Setup Time for Temporary Unprotect Min Sector Min F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 18. Temporary Sector Unprotect All Speed Options 500 4 Unit ns us Figure 24. Temporary Sector Unprotect Timing Diagram 10 12V RESET 0 or VCC tVIDR CE Program or Er ase Com man d Seq uence 0 or VCC tVIDR WE tRSP RY/BY Figure 25. DQ6 vs DQ2 for Erase and Erase Suspend Operations En ter E m bedde d Er as in g WE Er as e S u s pe n d Enter Eras e Suspend Program Er as e Su s pen d Pr ogr am Er as e Resume Er as e Su s pen d Read Er as e Er as e Com pl et e DQ6 DQ2 Notes : The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an erase-suspended. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 49/55 ESMT S tart F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 26. Temporary Sector Unprotect Algorithm RESET = V ID ( Note 1) P rogram Erase or Program Operation Operation Completed RESET = V I H Temporary Sector Unprotect Completed (Note 2) Notes : 1. All protected status are temporary unprotect. VID = 10V~10.5V 2. All previously protected sectors are protected again. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 50/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Figure 27. ID Code Read Timing Waveform Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 51/55 ESMT 11. ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycles (1) Data Retention Notes: 1.Not 100% Tested, Excludes external system level over head. 2.Typical values measured at 25 ° C, 3.3V. 3.Maximum values measured at 85° C, 2.7V. Byte Mode Word Mode Limits Typ.(2) 0.7 25 9 11 36 24 100,000 20 F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Table 19. Erase And Programming Performance (Note.1) Max.(3) 15 50 300 360 108 72 Unit Sec Sec Us Us Sec Sec Cycles Years Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 52/55 ESMT 12. PACKAGE DIMENSION 48-LEAD TSOP(I) ( 12x20 mm ) F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Symbol A A1 A2 b b1 c c1 Dimension in mm Min Norm Max ------- ------- 1.20 0.05 ------- 0.15 0.95 1.00 1.05 0.17 0.22 0.27 0.17 0.20 0.23 0.10 ------- 0.21 0.10 ------- 0.16 Dimension in inch Dimension in mm Symbol Min Norm Max Min Norm Max ------- ------- 0.047 D 20.00 BSC 0.006 ------- 0.002 D1 18.40 BSC 0.037 0.039 0.041 E 12.00 BSC 0.007 0.009 0.011 0.50 BSC e 0.007 0.008 0.009 L 0.50 0.60 0.70 0.004 ------- 0.008 θ 0O ------8O 0.004 ------- 0.006 Dimension in inch Min Norm Max 0.787 BSC 0.724 BSC 0.472 BSC 0.020 BSC 0.020 0.024 0.028 0O ------8O Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 53/55 ESMT Revision History Revision 1.0 1.1 Date 2008.08.28 2008.09.30 Original Modify Chip Erase Time F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Description Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 54/55 ESMT F49L320UA/F49L320BA Operation Temperature Condition -40°C~85°C Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Publication Date : Sep. 2008 Revision: 1.1 55/55