ESMT
SDRAM
M12L16161A 512K x 16Bit x 2Banks Synchronous DRAM
FEATURES
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page) Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 32ms refresh period (2K cycle)
GENERAL DESCRIPTION
The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
ORDERING INFORMATION
Part NO. M12L16161A-5TG M12L16161A-7TG M12L16161A-7BG MAX Freq. 200MHz 143MHz 143MHz PACKAGE COMMENTS TSOP(II) TSOP(II) VFBGA Pb-free Pb-free Pb-free
PIN CONFIGURATION (TOP VIEW)
1 A VSS 2 DQ15 3 4 5 6 DQ0 7 VDD
VDD DQ0 DQ1 VSSQ DQ2 DQ3 VDDQ DQ4 DQ5 VSSQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS BA A10/AP A0 A1 A2 A3 VDD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26
VSS DQ15 DQ14 VSSQ DQ13 DQ12 VDDQ DQ11 DQ10 VSSQ DQ9 DQ8 VDDQ N.C/RFU UDQM CLK CKE N.C A9 A8 A7 A6 A5 A4 VSS 50PIN TSOP(II) (400mil x 825mil) (0.8 mm PIN PITCH)
B
DQ14
VSSQ
VDDQ
DQ1
C
DQ13
VDDQ
VSSQ
DQ2
D
DQ12
DQ11
DQ4
DQ3
E
DQ10
VSSQ
VDDQ
DQ5
F
DQ9
VDDQ
VSSQ
DQ6
G
DQ8
NC
NC
DQ7
H
NC
NC
NC
NC
J
NC
UDQM
LDQM
WE
K
NC
CLK
RAS
CAS
L
CKE
NC
NC
CS
M
BA
A9
NC
NC
N
A8
A7
A0
A10
P
A6
A5
A2
A1 60 Ball VFBGA (6.4x10.1mm) (0.65mm ball pitch)
R
VSS
A4
A3
VDD
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 1/29
ESMT
FUNCTIONAL BLOCK DIAGRAM
M12L16161A
I/O Control
Bank Select
Data Input Register
LWE LDQM
Row Buffer Refresh Counter
Row Decoder
Sense AMP
Output Buffer
512K x 16 512K x 16
Address Register LRAS CLK
DQi
CLK ADD
LCBR
LRAS
Col. Buffer
Column Decoder
Latency & Burst Length
LCKE
Programming Register LCBR LWE LCAS LWCBR LDQM
Timing Register CKE L(U)DQM
CS
RAS
CAS
WE
PIN FUNCTION DESCRIPTION
Pin CLK CS CKE A0 ~ A10/AP BA RAS CAS
WE
Name System Clock Chip Select Clock Enable Address Bank Select Address Row Address Strobe
Input Function Active on the positive going edge to sample all inputs. Disables or enables device operation by masking or enabling all inputs except CLK, CKE and L(U)DQM. Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row / column addresses are multiplexed on the same pins. Row address : RA0 ~ RA10, column address : CA0 ~ CA7 Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge. Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. Enables write operation and row precharge. Latches data in starting from CAS , WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active.
Column Address Strobe
Write Enable Data Input / Output Mask
L(U)DQM
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 2/29
ESMT
DQ0 ~ 15 VDD/VSS VDDQ/VSSQ N.C/RFU Data Input / Output Power Supply/Ground Data Output Power/Ground No Connection/ Reserved for Future Use
M12L16161A
Data inputs/outputs are multiplexed on the same pins. Power and ground for the input buffers and the core logic. Isolated power supply and ground for the output buffers to provide improved noise immunity. This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter Voltage on any pin relative to VSS Voltage on VDD supply relative to VSS Storage temperature Power dissipation Short circuit current Symbol VIN,VOUT VDD,VDDQ TSTG PD IOS Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ + 150 0.7 50 Unit V V
°C
W MA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA=0 to 70 °C ) Parameter Supply voltage Input logic high voltage Input logic low voltage Output logic high voltage Output logic low voltage Input leakage current Output leakage current Symbol VDD,VDDQ VIH VIL VOH VOL IIL IOL Min 3.0 2.0 -0.3 2.4 -5 -5 Typ 3.3 3.0 0 Max 3.6 VDD+0.3 0.8 0.4 5 5 Unit V V V V V uA uA Note 1 2 IOH =-2mA IOL = 2mA 3 4
Note : 1.VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable. 2.VIL (min) = -1.5V AC for pulse width ≤ 10ns acceptable. 3.Any input 0V ≤ VIN ≤ VDD+ 0.3V, all other pins are not under test = 0V. 4.Dout is disabled, 0V ≤ VOUT ≤ VDD.
CAPACITANCE (VDD = 3.3V, TA = 25 °C , f = 1MHz)
Pin CLOCK RAS , CAS , WE , CS , CKE, LDQM, UDQM ADDRESS DQ0 ~DQ15 Symbol CCLK CIN CADD COUT Min 2.5 2.5 2.5 4.0 Max 4.0 5.0 5.0 6.5 Unit pF pF pF pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 3/29
ESMT
DC CHARACTERISTICS
M12L16161A
(Recommended operating condition unless otherwise noted, TA = 0 to 70 °C VIH(min)/VIL(max)=2.0V/0.8V) Parameter Operating Current (One Bank Active) Precharge Standby Current in power-down mode Precharge Standby Current in non power-down mode Symbol Test Condition CAS Latency Version -5 130 2 2 25 mA -7 100 Unit Note mA mA 1
ICC1 ICC2P ICC2PS ICC2N
Burst Length = 1 tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA CKE ≤ VIL(max), tCC =15ns CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns Input signals are changed one time during 30ns CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable CKE ≤ VIL(max), tCC =15ns CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns Input signals are changed one time during 30ns CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞ Input signals are stable IOL= 0Ma, Page Burst All Band Activated, tCCD = tCCD (min) tRC ≥ tRC(min) CKE ≤ 0.2V 3 2
ICC2NS Active Standby Current in power-down mode Active Standby Current in non power-down mode (One Bank Active) Operating Current (Burst Mode) Refresh Current Self Refresh Current ICC3P ICC3PS ICC3N ICC3NS ICC4
10 10 10 25 10 150 150 150 1 120 120 120
mA mA
mA mA mA 1
ICC5 ICC6
mA mA
2
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min). 2.Refresh period is 32ms. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 4/29
ESMT
AC OPERATING TEST CONDITIONS (VDD=3.3V ± 0.3V,TA= 0 to 70 °C ) Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition
3 .3V
M12L16161A
Value 2.4 / 0.4 1.4 tr / tf = 1 / 1 1.4 See Fig.2 Unit V V ns V
Vtt =1.4V
1200 Ω Output VOH(DC) = 2.4V, IOH = -2mA VOL(DC) = 0.4V, IOL = 2mA Output Z0=50 50
Ω
Ω
870 Ω
30 pF
30 pF
(Fig.1) DC Output Load circuit
(Fig.2) AC Output Load Circuit
OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to new col. Address delay Last data in to row precharge Last data in to burst stop Col. Address to col. Address delay Number of valid output data Symbol tRRD(min) tRCD(min) tRP(min) tRAS(min) tRAS(max) tRC(min) tCDL(min) tRDL(min) tBDL(min) tCCD(min) CAS latency=3 CAS latency=2 48 1 2 1 1 2 1 Version -5 10 15 15 30 100 63 -7 14 20 20 42 Unit ns ns ns ns us ns CLK CLK CLK CLK ea 1 2 2 2 3 4 Note 1 1 1 1
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 5/29
ESMT
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter CLK cycle time CLK to valid output delay CAS Latency =3 CAS Latency =2 CAS Latency =3 CAS Latency =2 Symbol tCC tSAC tOH tCH tCL tSS tSH tSLZ tSHZ -5 Min 5 7 2 2 2 2 1 1 5.5 5.5 Max 1000 4.5 5 Min 7 8.6 2 2.5 2.5 2 1 1 6 6 ns -7 Max 1000 6 6 Unit ns ns ns ns ns ns ns ns
M12L16161A
Note 1 1 2 3 3 3 3 2
Output data hold time CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z CLK to output in Hi-Z CAS Latency =3 CAS latency =2
*All AC parameters are measured from half to half. Note: 1.Parameters depend on programmed CAS latency. 2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter. 3.Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 6/29
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Mode Register 11 0 11 x 11 11 x 11 0 10 0 10 x 10 10 x 10 0 9 0 9 1 9 9 x 9 0 8 0 8 0 8 1 8 1 8 0 7 1 7 0 7 0 7 1 7 0 6 5 4 4 4 3 3 WT 3 3 v 3 WT 2 2 BL 2 2 v 2 1 1 v 1 BL 0 Use in future 6 v 6 5 4 v v 5 4 LTMODE 0 v 0 Vender Specific Mode Register Set 1 1 0 6 5 LTMODE 6 5 0
M12L16161A
JEDEC Standard Test Set (refresh counter test) Burst Read and Single Write (for Write Through Cache)
v =Valid x =Don’t care Bit2-0 000 001 010 011 100 101 110 111 0 1 Bits6-4 000 001 010 011 100 101 110 111 WT=0 1 2 4 8 R R R Full page Sequential Interleave WT=1 1 2 4 8 R R R R
Burst length
Wrap type
Latency mode
Mode Register Write Timing
CAS Latency R R 2 3 R R R R Remark R : Reserved
CLOCK CKE CS RAS CAS WE A0-A11 M ode Register W rite
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 7/29
ESMT
Burst Length and Sequence
(Burst of Two) Starting Address (column address A0 binary) 0 1 Sequential Addressing Sequence (decimal) 0,1 1,0
M12L16161A
Interleave Addressing Sequence (decimal) 0,1 1,0
(Burst of Four) Starting Address (column address A1-A0, binary) 00 01 10 11 Sequential Addressing Sequence (decimal) 0,1,2,3 1,2,3,0 2,3,0,1 3,0,1,2 Interleave Addressing Sequence (decimal) 0,1,2,3 1,0,3,2 2,3,0,1 3,2,1,0
(Burst of Eight) Starting Address (column address A2-A0, binary) 000 001 010 0 11 100 101 11 0 1 11 Sequential Addressing Sequence (decimal) 0,1,2,3,4,5,6,7 1,2,3,4,5,6,7,0 2,3,4,5,6,7,0,1 3,4,5,6,7,0,1,2 4,5,6,7,0,1,2,3 5,6,7,0,1,2,3,4 6,7,0,1,2,3,4,5 7,0,1,2,3,4,5,6 Interleave Addressing Sequence (decimal) 0,1,2,3,4,5,6,7 1,0,3,2,5,4,7,6 2,3,0,1,6,7,4,5 3,2,1,0,7,6,5,4 4,5,6,7,0,1,2,3 5,4,7,6,1,0,3,2 6,7,4,5,2,3,0,1 7,6,5,4,3,2,1,0
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for 1Mx16 divice.
POWER UP SEQUENCE 1.Apply power and start clock, attempt to maintain CKE= “H”, L(U)DQM = “H” and the other pin are NOP condition at the inputs. 2.Maintain stable power, stable clock and NOP input condition for a minimum of 200us. 3.Issue precharge commands for all banks of the devices. 4.Issue 2 or more auto-refresh commands. 5.Issue mode register set command to initialize the mode register. Cf.)Sequence of 4 & 5 is regardless of the order.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 8/29
ESMT
SIMPLIFIED TRUTH TABLE Register Refresh COMMAND Mode Register Set Auto Refresh Entry Self Refresh Exit CKEn-1 CKEn CS H X L H H L L L H H H H Bank Selection Both Banks Entry Exit Entry Exit DQM No Operation Command H H L H L H H H H X X X X X L H L H L H L L L L L H L X H L H L H L RAS L L H X L H H H L X V X X H X V X X H CAS L L H X H L L H H X V X X H X V X H
WE L
M12L16161A
H H X H H L L L X V X X H X V X H
DQM BA A10/AP A9~A0 Note X OP CODE 1,2 3 X X 3 X X X X X X X X X X V X X X X 7 V X L H X V V V X Row Address Column L H L H X X 3 3 4
Address (A0~A7) 4,5 Column 4 Address 4,5 (A0~A7)
Bank Active & Row Addr. Auto Precharge Disable Read & Column Address Write & Column Address Burst Stop Precharge Clock Suspend or Active Power Down Precharge Power Down Mode Auto Precharge Enable Auto Precharge Disable Auto Precharge Enable
6 4 4
X
(V= Valid, X= Don’t Care, H= Logic High , L = Logic Low)
Note: 1. OP Code: Operation Code A0~ A10/AP, BA: Program keys.(@MRS) 2. 3. MRS can be issued only at both banks precharge state. A new command can be issued after 2 clock cycle of MRS. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by “Auto”. Auto / self refresh can be issued only at both banks idle state. 4. BA: Bank select address. If “Low”: at read, write, row active and precharge, bank A is selected. If “High”: at read, write, row active and precharge, bank B is selected. If A10/AP is “High” at row precharge, BA ignored and both banks are selected. 5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read /write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 9/29
ESMT
M12L16161A
Single Bit Read-Write-Read Cycle (Same Page) @CAS Latency=3, Burst Length=1
tCH
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CLOCK tCL tCC CKE
*Note1
HIGH tRAS tRC tSH tRP tSS
CS tRCD tSH RAS tSS CAS tSS tSH ADDR Ra tSS
*Note2 *Note2,3
tSH
tCCD
tSS Ca Cb tSH
*Note2,3 *Note2,3 *Note4 *Note2
Cc
Rb
BA
BS
BS
BS
BS
BS
BS
A10 /AP
Ra
*Note 3
*Note 3
*Note 3
*Note4
Rb
tRAC tSAC DQ Qa tSLZ WE tSS tSS DQM tSH tOH Db tSS tSH tSH Qc
Row Active
Read
W rite
Read Precharge
Row Active
:D on' t Care
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 10/29
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2. Bank active & read/write are controlled by BA.
M12L16161A
*Note: 1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
BA 0 1
Active & Read/Write Bank A Bank B
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command. A10/AP 0 BA 0 1 1 0 1 Operation Disable auto precharge, leave bank A active at end of burst. Disable auto precharge, leave bank B active at end of burst. Enable auto precharge, precharge bank A at end of burst. Enable auto precharge, precharge bank B at end of burst.
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP 0 0 1
BA 0 1 X
precharge Bank A Bank B Both Banks
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 11/29
ESMT
Power Up Sequence
0
CLOCK
M12L16161A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CKE
High l evel is n ec es sar y
CS
tRP
RAS
tRC
tRC
CAS
ADDR
Key
RAa
BA
Key
A10 /AP
Key High-Z
RAa
DQ
WE
DQM
High level is necessary
Precharge All Banks
Auto Ref resh
Auto Ref resh
Mode R egis ter Set ( A- Ban k ) Row Active
: Don't care
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 12/29
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Read & Write Cycle at Same Bank @Burst Length = 4
0
CLOCK
M12L16161A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CKE
HIGH
t RC
CS
*Note1
tRCD
RAS
*Note2
CAS
ADDR
Ra
Ca0
Rb
Cb0
BA
A10/AP
Ra
Rb
tO H
CL=2 QC CL=3
R AC *Note3
t R AC
*Note3
Qa0
Qa1
Qa2
Qa3
Db0
Db1
Db2
Db3
t S AC
Qa0
tOH
Qa1 Qa2
tS H Z
Qa3
*Note4
tRDL
Db0 Db1 Db2 Db3
t
t S AC
tS H Z
*Note4
tRDL
WE
DQ M
Row Active (A- Bank)
Read (A- Bank)
Precharge (A- Bank)
Row Active (A- Bank)
W r ite (A-Bank)
Precharge (A- Bank)
: Don't care
*Note: 1.Minimum row cycle times is required to complete internal DRAM operation. 2.Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row precharge. Last valid output will be Hi-Z(tSHZ) after the clock. 3.Access time from Row active command. tcc*(tRCD +CAS latency-1)+tSAC 4.Ouput will be Hi-Z after the end of burst.(1,2,4,8 bit burst) Burst can’t end in Full Page Mode.
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Publication Date : Sep. 2008 Revision : 2.7 13/29
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Page Read & Write Cycle at Same Bank @ Burst Length=4
0 CLOCK CKE CS HIGH 1 2 3 4 5 6 7 8 9 10 11 12 13 14
M12L16161A
15
16
17
18
19
tRCD
RAS
*Note2
CAS
ADDR
Ra
Ca0
Cb0
Cc0
Cd0
BA
A10/AP
Ra
tRDL
CL=2 DQ Qa0 Qa1 Qb0 Qb1 Dc0 Dc1 Dd0 Dd2 Qa0 Qa1 Qb0 Qb1 Qb2 Dc0 Dc1 Dd0 Dd1
CL=3
tCDL
WE
*Note3 *Note1
DQM
Row Active (A-Bank)
Read (A-Bank)
Read (A-Bank)
Write (A-Bank)
Write (A-Bank)
Precharge (A-Bank)
: Don't care
*Note :1.To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention. 2.Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written. 3.DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked internally.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 14/29
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Page Read Cycle at Different Bank @ Burst Length=4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
M12L16161A
16
17
18
19
CLOCK
CKE
*Note1
HIGH
CS
RAS
*Note2
CAS
ADDR
RAa
CAa
RBb
CBb
CAc
CBd
CAe
BA
A10/AP
RAa
RBb
CL=2 DQ CL=3
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1
QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1
QBb2 QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
WE
DQM
Row Active (A-Bank)
Read (A-Bank) Row Active (B-Bank)
Read (B-Bank)
Read (A-Bank)
Read (B-Bank)
Read (A-Bank)
Precharge (A-Bank)
: Don't care
*Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going dege. 2.To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 15/29
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Page Write Cycle at Different Bank @Burst Length = 4
0 CLOCK 1 2 3 4 5 6 7 8 9 10 11 12 13 14
M12L16161A
15
16
17
18
19
CKE
HIGH
CS
RAS
CAS
*Note2
ADDR
RAa
CAa
RBb
CBb
CAc
CBd
BA
A10/AP
RAa
RBb
DQ
DAa0
DAa1
DAa2
DAa3
DBb0
DBb1
DBb2 DBb3
DAc0
DAc1
DBd0
DBd1
tCDL
WE
tRDL
*Note1
DQM
Row Active (A-Bank)
Row Active (B-Bank) W rite (A-Bank)
W rite (B-Bank)
Write (A-Bank) Write (B-Bank)
Precharge (Both Banks)
: Don't care
*Note: 1.To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data. 2.To interrupt burst write by row precharge, both the write and the precharge banks must be the same.
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Publication Date : Sep. 2008 Revision : 2.7 16/29
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Read & Write Cycle at Different Bank @ Burst Length = 4
M12L16161A
*Note: 1.tCDL should be met to complete write.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 17/29
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Read & Write Cycle with auto Precharge @ Burst Length =4
0
CLOCK
M12L16161A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CKE
HIGH
CS
RAS
CAS
ADDR
Ra
Rb
Ca
Cb
BA
A10 /A P
Ra
Rb
CL= 2 DQ CL=3
Qa0
Q a1
Qa2
Q a3
Db0
Db1
Db2
Db3
Q a0
Q a1
Qa2
Qa3
Db0
Db1
Db2
Db3
WE
DQM
Row Active ( A - Bank )
Read with Auto Precharge ( A - Bank ) Row Active ( B - Bank )
Auto Precharge Start Point ( A - Bank)
W rite with Auto Pr echarge ( B- Bank )
Auto Pr echarge Star t Poin t ( B- Bank )
:D on' t Ca re
*Note: 1.tCDL Should be controlled to meet minimum tRAS before internal precharge start (In the case of Burst Length=1 & 2 and BRSW mode)
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 18/29
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0
CLOCK
M12L16161A
Clock Suspension & DQM Operation Cycle @CAS Latency=2, Burst Length=4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CKE
CS
RAS
CAS
ADDR
Ra
Ca
Cb
Cc
BA
A10 /AP
Ra
DQ
Q a0
Qa1
Q a2
Q a3
Qb0
Q b1
Dc 0
Dc2
tSHZ
WE
tSHZ
*Note1
DQM
Row Active
Read
Clock Suspension
Read
W rite DQM Read DQM W rite Cloc k Sus pension
W rite DQM
:Don't Car e
*Note:1.DQM is needed to prevent bus contention.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 19/29
ESMT
0
CLOCK
M12L16161A
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length =Full page
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CKE
HIGH
CS
RAS
CAS
ADDR
RAa
CAa
CAb
BA
A10 /AP
RAa
*Note2 CL=2 DQ CL=3
1
1 QAb0 QAb1 QAb 2 QAb3 QAb4 QAb5
QAa0 QAa1 QAa2 QAa 3 QAa4
2 QAa0 QAa1 QAa 2 QAa3 QAa4
2 QAb0 QAb1 QAb2 QAb3 QAb4 QAb5
WE
*Note1
DQM
Row Active ( A- B an k )
Read (A- Ban k)
Burst Stop
Read (A- Ban k)
Precharge ( A- B an k )
:Don't Care
*Note: 1.Burst can’t end in full page mode, so auto precharge can’t issue. 2.About the valid DQs after burst stop, it is same as the case of RAS interrupt. Both cases are illustrated above timing diagram. See the label 1,2 on them. But at burst write, burst stop and RAS interrupt should be compared carefully. Refer the timing diagram of “Full page write burst stop cycle”. 3.Burst stop is valid at every burst length. Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 20/29
ESMT
0
CLOCK
M12L16161A
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CKE
HIGH
CS
RAS
CAS
ADDR
RAa
CAa
CAb
BA
A10 /AP
RAa
tBDL
*Note2
tRDL
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5
DQ
DAa0 DAa1 DAa2 DAa3 DAa4
WE
DQM
Row Active ( A- B an k )
W rite (A- Ban k )
Burst Stop
W rite (A- Ban k )
Precharge ( A- B an k )
:Don't Care
*Note: 1. Burst can’t end in full page mode, so auto precharge can’t issue. 2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC parameter of tRDL. DQM at write interrupted by precharge command is needed to prevent invalid write. Input data after Row precharge cycle will be masked internally. 3.Burst stop is valid at every burst length.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 21/29
ESMT
Burst Read Single bit Write Cycle @Burst Length=2
CLOCK
M12L16161A
*Note1
CKE
HIGH
CS
RAS
*Note2
CAS
ADDR
RAa
CAa
RBb
CAb
RAc
CBc
CAd
BA
A10 /AP
RAa
RBb
RAc
CL=2 DQ CL= 3
DAa0
QAb0 QAb1
DBc0
QAd0 QAd1
DAa0
QAb0 QAb1
DBc0
QAd0 QAd1
WE
DQM
Row Active ( A- B an k )
Row Active (B-Bank) W rite (A- Ban k) Read with Auto Precharge (A-Bank)
Row Act ive ( A- B an k ) W rite with Auto Pr echarge ( B- Bank )
Read ( A- B an k )
Precharge ( A- B an k )
:Don't Care
*Note:1.BRSW modes is enabled by setting A9 “High” at MRS(Mode Register Set). At the BRSW Mode, the burst length at write is fixed to “1” regardless of programmed burst length. 2.When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge command will be issued after two clock cycles.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 22/29
ESMT
Active/Precharge Power Down Mode @CAS Latency=2, Burst Length=4
0
CLOCK
*Note2
M12L16161A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
tSS
CKE
*Note1
tS S
*Not e3
tS S
CS
RAS
CAS
ADDR
Ra
Ca
BA
A10 /A P
Ra
tSHZ
DQ Q a0 Qa1 Qa2
WE
DQM
Pr ech ar ge Pow er - Dow n Entry
Row Active Precharge Power-Down Exit
Read Active Power-down Exit
Precharge
Active Power-down Entry
: Don't care
*Note :1.Both banks should be in idle state prior to entering precharge power down mode. 2.CKE should be set high at least 1CLK+tss prior to Row active command. 3.Can not violate minimum refresh specification. (32ms)
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 23/29
ESMT
Self Refresh Entry & Exit Cycle
0
CLOCK
*Note2 *Note1 *Note4
M12L16161A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
tRCmin
*Note6
CKE
*Note3
tSS
CS
*Note5
RAS
*Note7
CAS
ADDR
BA
A10 /AP
DQ
Hi-Z
Hi-Z
WE
DQM
Sel f R ef r esh En tr y
S e l f R ef r e s h E xi t
Auto Refresh
: Don't care
*Note: TO ENTER SELF REFRESH MODE 1. CS , RAS & CAS with CKE should be low at the same clock cycle. 2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE. 3. The device remains in self refresh mode as long as CKE stays “Low”. cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh. TO EXIT SELF REFRESH MODE 4. System clock restart and be stable before returning CKE high. 5. CS Starts from high. 6. Minimum tRC is required after CKE going high to complete self refresh exit. 7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst refresh. Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 24/29
ESMT
Mode Register Set Cycle
0 CLOCK 1 2 3 4 5 6
M12L16161A
Auto Refresh Cycle
0 1 2 3 4 5 6 7 8 9 10
CKE
HIGH
HIGH
CS *Note2 RAS *Note1 CAS *Note3 ADDR Key Ra
tRC
DQ
Hi-Z
Hi-Z
WE
DQM
MRS
New C om m an d
Auto Ref res h
New C om m an d
:Don't Care
*Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle.
MODE REGISTER SET CYCLE *Note: 1. CS , RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register. 2.Minimum 2 clock cycles should be met before new RAS activation. 3.Please refer to Mode Register Set table.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 25/29
ESMT
PACKAGE DIMENSIONS 50-LEAD TSOP(II) SDRAM(400mil)
M12L16161A
50
26
B B1 E1 E
WITH PLATING
BASE METAL SECTION Y-Y
1
e
YY
25
D
θ°
A2
A
L L1 DETAIL "A"
Y
SEATING PLANE
Symbol A A1 A2 B B1 C C1 D E E1 L L1 e Y θ
Min 0.051 0.95 0.30 0.30 0.12 0.10 20.82 11.56 10.03 0.40 0
Dimension in mm Nom 0.127 1.00 0.35 0.127 20.95 11.76 10.16 0.50 0.80 REF 0.80 BSC -
A1
Max 1.20 0.203 1.05 0.45 0.40 0.21 0.16 21.08 11.96 10.29 0.60 0.1 8
Min 0.002 0.037 0.012 0.012 0.005 0.004 0.820 0.455 0.394 0.016 0
Dimension in inch Nom 0.005 0.039 0.014 0.005 0.825 0.463 0.400 0.020 0.031 REF 0.031 BSC -
C1 C "A" GAGE PLANE
Max 0.047 0.008 0.041 0.018 0.016 0.008 0.006 0.830 0.471 0.405 0.024 0.004 8
Controlling dimension : Millimeter
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 26/29
ESMT
PACKING 60-BALL DIMENSIONS SDRAM ( 6.4x10.1 mm )
M12L16161A
Symbol A A1 A2 Φb D E D1 E1 e
Dimension in mm Min Norm Max 1.00 0.20 0.25 0.30 0.61 0.66 0.71 0.30 0.35 0.40 6.30 6.40 6.50 10.00 10.10 10.20 3.90 9.10 0.65
Dimension in inch Min Norm Max 0.039 0.008 0.010 0.012 0.024 0.026 0.028 0.012 0.014 0.016 0.248 0.252 0.256 0.394 0.398 0.402 0.154 0.358 0.026
Controlling dimension : Millimeter.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 27/29
ESMT
Revision History
Revision 0.1 0.2 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Date 1998.10.23 1998.12.04 1999.12.10 2000.01.26 2000.04.25 2000.11.27 2001.02.22 2001.06.04 2001.09.07 2002.03.20 2003.12.16 2004.03.05 2005.05.10 2005.07.07 2005.10.06 2005.11.15 2007.05.03 2007.06.11 2007.07.20 2008.09.10 Original Add 200MHZ 1. Delete Preliminary 2. Rename the filename Add –5.5 Spec Correct error typing of C1 dimension Description
M12L16161A
1. P5 Number of valid output data CAS Latency 3 2ea 2. P17. P19. P21 Read Command shift right 1CLK 3. P15. P19. P20 Precharge Command shift left 1CLK P6 modify tOH –6(2ns) & -7(2ns) P3. P4 modify DC current P5 modify AC parameters 1. P28 C1(Nom)=0.15mm 0.127mm 2. P28 delete symbol=ZD Modify stand off=0.051~0.203mm 1. Correct typing error of timing (tRC; tRP;tRCD) 2. Add tRRD timing chart Add “Pb-free” to ordering information 1. Modify ICC1, ICC2N, ICC3N, ICC4, ICC5 spec 2. Delete –5.5, -6, -8, -10 AC spec Add 60V FBGA Modify VFBGA 60Ball Total high spec Delete BGA ball name of packing dimensions Modify Pin Configuration (TOP VIEW) Modify tRAS(min) 40ns => 30ns and tRC(min) 55ns => 48ns Add Y spec. into TSOPII package dimension
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 28/29
ESMT
M12L16161A
Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express , implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2008 Revision : 2.7 29/29
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